Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1994.07b
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- Pages.1216-1219
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- 1994
Fabrication and Characteristics of Reflection Type InGaAs MQW SEED
반사형 InGaAs MQW SEED 소자의 제작 및 특성
- Kim, Sung-Woo (Dept. of Electronic and Electrical Eng., POSTECH / RIST) ;
- Park, Sung-Soo (Dept. of Electronic and Electrical Eng., POSTECH / RIST) ;
- Park, Jong-Cheol (Dept. of Electronic and Electrical Eng., POSTECH / RIST) ;
- Kim, Taek-Seung (Dept. of Electronic and Electrical Eng., POSTECH / RIST) ;
- Kwon, O-Dae (Dept. of Electronic and Electrical Eng., POSTECH / RIST) ;
- Kang, Bong-Koo (Dept. of Electronic and Electrical Eng., POSTECH / RIST)
- 김성우 (포항공과대학교 전자전기공학과/산업과학기술연구소) ;
- 박성수 (포항공과대학교 전자전기공학과/산업과학기술연구소) ;
- 박종철 (포항공과대학교 전자전기공학과/산업과학기술연구소) ;
- 김택승 (포항공과대학교 전자전기공학과/산업과학기술연구소) ;
- 권오대 (포항공과대학교 전자전기공학과/산업과학기술연구소) ;
- 강봉구 (포항공과대학교 전자전기공학과/산업과학기술연구소)
- Published : 1994.07.21
Abstract
A reflection type SEED from LP-MOCVD grown InGaAs/GaAs ESQW structures, with 5% In fraction, has been fabricated and its basic characteristics were investigated. Its intrinsic region consists of 50 pairs of alternating
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