The fabrication of the 1.3$\mu\textrm{m}$ GaInAsP/InP surface emitting LED and its characteristics.

1.3$\mu\textrm{m}$파장의 GaInAsP/InP 표면 발광형 LED의 제작과 특성

1.3${\mu}{\textrm}{m}$ surface-emitting GaInAsP/InP LED was fabricated by two-phase supercooling LPE technique. The lattice mismatch of the grown DH wafer was typically 0.03%. The processes involve SiO2 CVD, lithography, Zn diffusion, lift-off, lapping, annealing, and wire bonding. The fabricated LED shows the optical power of 600㎼ at 70mA driving current, differential resistance of 4$\Omega$, the f3dB of 35MHz, and the FWHM of 1040{{{{ ANGSTROM }}. The peak wavelength of the fabricated LED was at 1.29${\mu}{\textrm}{m}$(100mA).