Conductance 법에 의한 $N_{2}Plasma$ 처리한 산화막의 계면상태 밀도에 관한 연구

The Study on the Interface State Density of $N_{2}Plasma$ Treated Oxide by the Conductance Technique

Nitrided oxides have been investigated recently for application as a replacement for thermally grown $SiO_2$ in MIS devices. In this paper, thin oxides were nitrided in $N_2$ Plasma ambient. With the measurement of the equivalent paralled conductance and capacitance by the using coductance technique, the characterization of Si-SiON interface is developed. The interface state density of Si-SiON is obtained by $1{\times}10^{11}{\sim}9{\times}10^{11}(eV^{-1}Cm^{-2})$. After${\pm}$B-T stress is performed on the sample, the interface state density gets increased.