Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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A Study on the Ti-Silicide Formation

Ti-실리사이드 형성에 관한 연구

  • Kim, Hark-Gyun (Department of Metallurgical Engineering, College of Engineering, Seoul National University) ;
  • Joo, Seung-Ki (Department of Metallurgical Engineering, College of Engineering, Seoul National University)
  • 김학균 (서울 대학교 공과대학 금속공학과) ;
  • 주승기 (서울 대학교 공과대학 금속공학과)
  • Published : 1987.07.03
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Abstract

Formation of the titanium silicides was performed by the furnace annealing. Ti-silicide was formed by reacting Ti films with singlecrystalline silicon in vacuum or nitrogen ambient in the temperature range $500{\sim}900^{\circ}C$. The Ti-Si interaction in such films was investigated by using X-ray diffraction, and sheet resistance measurements. It was found that the dorminant crystal phase of silicide formed during annealing at $600{\sim}700^{\circ}C$ was TiSi, and $TiSi_2$ phase is associated with a very low sheet resistance(<$2{\Omega}/{\Box}$).

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