• Title/Summary/Keyword: zirconium oxide

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Observation of Formed Oxide Layer of Zirconium Alloy at the High Temperature under the High Steam Pressure (고온-고압 수증기에서 형성된 지르코늄 합금의 산화막 관찰)

  • Yang, Seong-U;Park, Gwang-Heon
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2007.11a
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    • pp.177-179
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    • 2007
  • 지르코늄 합금 피복관을 고온-고압 수증기 분위기에서 산화시켰으며 이에 따른 결과를 도출하였다. 수증기 압력이 증가함에 따라서 산화량은 증가하였고, 산화막 두께 또한 두꺼워졌다. 산화된 시편의 산화막을 광학현미경과 주사전자현미경으로 관찰하였다. 대기압하에서 산화된 시편은 균일한 산화막을 갖는 반면 고압 수증기하에서 산화된 시편은 많은 균일이 관찰되었다.

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Development and Application of Group IV Transition Metal Oxide Precursors

  • Kim, Da Hye;Park, Bo Keun;Jeone, Dong Ju;Kim, Chang Gyoun;Son, Seung Uk;Chung, Taek-Mo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.303.2-303.2
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    • 2014
  • The oxides of group IV transition metals such as titanium, zirconium, hafnium have many important current and future application, including protective coatings, sensors and dielectric layers in thin film electroluminescent (TFEL) devices. Recently, group IV transition metal oxide films have been intensively investigated as replacements for SiO2. Due to high permittivities (k~14-25) compared with SiO2 (k~3.9), large band-gaps, large band offsets and high thermodynamic stability on silicon. Herein, we report the synthesis of new group IV transition metal complexes as useful precursors to deposit their oxide thin films using chemical vapor deposition technique. The complexes were characterized by FT-IR, 1H NMR, 13C NMR and thermogravimetric analysis (TGA). Newly synthesised compounds show high volatility and thermal stability, so we are trying to deposit metal oxide thin films using the complexes by Atomic Layer Deposition (ALD).

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Novel Fabrication of Designed Silica Structures Inspired by Silicatein-a

  • Park, Ji-Hun;Kwon, Sun-Bum;Lee, Hee-Seung;Choi, In-Sung S.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.557-557
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    • 2012
  • Silicatein-${\alpha}$, the enzyme extracted from silica spicules in glass sponges, has been studied extensively in the way of chemistry from 1999, in which the pioneering work by Morse, D. E. - the discovery of the enzymatic hydrolysis in Silicatein-${\alpha}$ - was published. Since its reaction conditions are physiologically favored, synthesis of various materials, such as gallium oxide, zirconium oxide, and silicon oxide, was achieved without any hazardous wastes. Although some groups synthesized oxide films and particles, they have not achieved yet controlled morphogenesis in the reaction conditions mentioned above. With the knowledge of catalytic triad involved in hydrolysis of silicone alkoxide and oligomerization of silicic acid, we designed the novel peptide amphiphiles to not only form self-assembled structure, but also display similar activities to silicatein-${\alpha}$. Designed templates were able to self-assemble into left-handed helices for the peptide amphiphiles with L-form amino acid, catalyzing polycondensation of silicic acids onto the surface of them. It led to the formation of silica helices with 30-50 nm diameters. These results were characterized by various techniques, including SEM, TEM, and STEM. Given the situation that nano-bio-technology, the bio-applicable technology in nanometer scale, has been attracting considerable attention; this result could be applied to the latest applications in biotechnology, such as biosensors, lab-on-a-chip, biocompatible nanodevices.

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Characterization of Oxide Scales Formed on TiAl-W-Zr Alloys (TiAl-W-Zr 합금에 생성된 고온산화막 분석)

  • Woo Sung-Wook;Lee Dong-Bok
    • Korean Journal of Materials Research
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    • v.14 no.6
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    • pp.394-398
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    • 2004
  • A Ti47Al1.7W-3.7Zr alloy was oxidized between $900^{\circ}C$ and $1050^{\circ}C$, and the oxide scales formed were studied. The oxide scales consisted primarily of an outer$TiO_2$ layer, an intermediate $Al_2$$O_3$-rich layer, and an inner mixed ($TiO _2$ + $Al_2$$O_3$) layer. Besides $TiO_2$ and $Al_2$$O_3$, oxidation led to the formation of some $Ti_2$AlN and TiN. Both W and Zr were preferentially segregated below the intermediate $Al_2$$O_3$-rich layer. Tungsten in the oxide scale was present as $WO_3$ and ${Ti}_{x}$$W_{1-x}$, whereas zirconium as monoclic-$ZrO_2$ and tetragonal-$ZrO_2$.

Microscopic characterization of pretransition oxide formed on Zr-Nb-Sn alloy under various Zn and dissolved hydrogen concentrations

  • Kim, Sungyu;Kim, Taeho;Kim, Ji Hyun;Bahn, Chi Bum
    • Nuclear Engineering and Technology
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    • v.50 no.3
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    • pp.416-424
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    • 2018
  • Microstructure of oxide formed on Zr-Nb-Sn tube sample was intensively examined by scanning transmission electron microscopy after exposure to simulated primary water chemistry conditions of various concentrations of Zn (0 or 30 ppb) and dissolved hydrogen ($H_2$) (30 or 50 cc/kg) for various durations without applying desirable heat flux. Microstructural analysis indicated that there was no noticeable change in the microstructure of the oxide corresponding to water chemistry changes within the test duration of 100 days (pretransition stage) and no significant difference in the overall thickness of the oxide layer. Equiaxed grains with nano-size pores along the grain boundaries and microcracks were dominant near the water/oxide interface, regardless of water chemistry conditions. As the metal/oxide interface was approached, the number of pores tended to decrease. However, there was no significant effect of $H_2$ concentration between 30 cc/kg and 50 cc/kg on the corrosion of the oxide after free immersion in water at $360^{\circ}C$. The adsorption of Zn on the cladding surface was observed by X-ray photoelectron spectroscopy and detected as ZnO on the outer oxide surface. From the perspective of $OH^-$ ion diffusion and porosity formation, the absence of noticeable effects was discussed further.

The Effect of Small Additions of Zr, Cr, Mg, Al, and Si on the Oxidation of 6:4 Brass

  • 이동복;문재진
    • Transactions of Materials Processing
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    • v.8 no.3
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    • pp.327-327
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    • 1999
  • The oxidation behavior of 60%Cu-40%Zn brass haying small amounts of Zr, Cr, Mg, Al, and Si was studied between 873 and 1043 K in air. The alloying element of Mg was harmful, while other alloying elements were beneficial to oxidation resistance. Particularly, the simultaneous addition of Al and Si decreased the oxidation rate drastically. During oxidation, Zr formed ZrO₂, Cr formed CuCr₂O₄, Mg formed MgO, Al formed A1₂CuO₄, and Si formed amorphous SiO₂. These oxides were incorporated in the oxide scale composed predominantly of ZnO. The oxide scales formed on all the tested alloyswere prone to cracking, wrinkling, and spallation.

Properties of Ru1Zr1 Alloy Gate Electrode for NMOS Devices (NMOS 소자에 대한 Ru1Zr1 합금 게이트 전극의 특성)

  • Lee, Chung-Keun;Kang, Young-Sub;Hong, Shin-Nam
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.6
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    • pp.602-607
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    • 2004
  • This paper describes the characteristics of Ru-Zr alloy gate electrodes deposited by co-sputtering. The various atomic composition was made possible by controlling sputtering power of Ru and Zr. Thermal stability was examined through 600 and 700 $^{\circ}C$ RTA annealing. Variation of oxide thickness and X-ray diffraction(XRD) pattern after annealing were employed to determine the reaction at interface. Low and relatively stable sheet resistances were observed for Ru-Zr alloy after annealing. Electrical properties of alloy film were measured from MOS capacitor and specific atomic composition of Zr and Ru was found to yield compatible work function for nMOS. Ru-Zr alloy was stable up to $700^{\circ}C$ while maintaining appropriate work function and oxide thickness.

Steam Pressure Effects on the Oxidation of Low-Sn Zircaloy-4 at High Temperatures (고압 수증기에 따른 Low-Sn Zircaloy-4의 고온 산화 거동)

  • Yang, Sung-Woo;Park, Kwang-Heon
    • Journal of the Korean institute of surface engineering
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    • v.40 no.4
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    • pp.180-184
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    • 2007
  • A new zirconium alloy, low-Sn Zircaloy-4 was investigated to see the effects of high pressure steam on the oxidation at high temperatures. High pressure steam turned out to enhance the oxidation at high temperatures below $1000^{\circ}C$. The oxide layer groved to deviate from the uniform layer under high steam pressures, and usually cracks were found at the thicker parts in the oxide layer. High pressure steam seems to destabilize the tetragonal oxides near the metal layer, and the monoclinic oxides transformed from the destabilized tetragonal oxides are structurally not sound, resulting in enhanced oxidation under high pressure steam.