• Journal of the Korean Society for Precision Engineering
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• v.16 no.10
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• pp.141-151
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• 1999

The resistance Spot Welding is widely used in the field of assembling the plates. However we don't still have any satisfactory solution, which is non-destructive quality evaluation in real-time or on-line, against it. Moreover, even though the rate of welding under the condition of expulsion has been high until now, quality control of welding against expulsion hasn't still been established. In this paper, it was proposed on the quality assurance technique of resistance spot welding pieces using Neuro-Fuzzy algorithm. Four parameters from electrode separation signal in the case of non-expulsion, and dynamic resistance patterns in the case of expulsion are selected as fuzzy input parameters. The parameters consist of Fuzzy Inference System are determined through Neuro-Learning algorithm. And then, fuzzy Inference System is constructed. It was confirmed that the fuzzy inference values of strength have within ${\pm}$4% error specimen in comparison with real strength for the total strength range, and the specimen percent having within ${\pm}$1% error was 88.8%. According to KS(Korean Industrial Standard), tensile-shear strength limit for electric coated of zinc is 400kgf/mm2. Judging to the quality of welding is good or bad, according to this criterion and the results of inference, the probability of misjudgement that good quality is valuated into poor one was 0.43%, on contrary it was 2.59%. Finally, the proposed Neuro-Fuzzy Inference System can infer the tensile-shear strength of resistance spot welding pieces with high performance for all cases-non-expulsion and expulsion. And On-Line Welding Quality Inspection System will be realized sooner or later.

• Korean Journal of Materials Research
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• v.23 no.5
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• pp.281-285
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• 2013

In the present work, ZnO nanofibers were applied to electrode materials for the detection of cholesterol. ZnO nanofibers were synthesized using the electrospinning technique with zinc acetate as a precursor. Electrospinning-synthesized ZnO nanofibers were uniformly distributed by properly controlling the electrospinning parameters. After the calcination treatment, nanofibers of pure ZnO phase were synthesized. Then, these fibers were successfully placed on Au-coated glass substrates by dispersion of ZnO nanofibers in ethanol, dropping, and drying, in sequence. Cholesterol oxidase was then immobilized onto the surface of the ZnO nanofibers. To enhance the immobilization, Nafion was additionally applied. The sensing performances of the fabricated ZnO nanofibers-based sensors were analyzed by cyclic voltammetry in terms of cholesterol concentration ranging from 100 to 400 mg/dl. In the I-V curves, measured by cyclic voltammetry, the ZnO nanofiber-based sensor showed a proportional current behavior with cholesterol concentrations in phosphate buffered saline solution. The sensitivity was measured and found to be $30.7nA/mM{\cdot}cm^2$, which is comparable to the values reported in the literature. After not only optimizing the shape of the ZnO nanofibers but also improving the adhesion nature between the ZnO nanofibers and the Au conducting layer, these fibers can be a good candidate for electrode materials in devices used to detect low concentrations of cholesterol in blood.

• Korean Chemical Engineering Research
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• v.49 no.6
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• pp.745-751
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• 2011

In this study, zinc or cerium exchanged zeolite was introduced to develop a novel anti-corrosion pigment. The primer paint was made using them and was coated on galvanized(GI) steel. The anti-corrosion performance was measured using electrochemical impedance spectroscopy(EIS). And scanning vibrating electrode technique(SVET) was employed to observe the cut-edge corrosion process of the coated GI steel. From EIS and SVET results, it could be confirmed that Ce ion-exchanged zeolite showed the anti-corrosion performance higher than Shieldex C303 and Zn ionexchanged zeolite. Finally, it was found that metal ion-exchanged zeolite may provide new possibility as the smart cathodic corrosion inhibitor delivery systems on galvanized steels.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.4
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• pp.281-285
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• 2020

Oxide semiconductor devices have become increasingly important because of their high mobility and good uniformity. The channel length of oxide semiconductor thin film transistors (TFTs) also shrinks as the display resolution increases. It is well known that reducing the channel length of a TFT is detrimental to the current saturation because of drain-induced barrier lowering, as well as the movement of the pinch-off point. In an organic light-emitting diode (OLED), the lack of current saturation in the driving TFT creates a major problem in the control of OLED current. To obtain improved current saturation in short channels, we fabricated indium gallium zinc oxide (IGZO) TFTs with single gate and double gate structures, and evaluated the electrical characteristics of both devices. For the double gate structure, we connected the bottom gate electrode to the source electrode, so that the electric potential of the bottom gate was fixed to that of the source. We denote the double gate structure with the bottom gate fixed at the source potential as the BGFP (bottom gate with fixed potential) structure. For the BGFP TFT, the current saturation, as determined by the output characteristics, is better than that of the conventional single gate TFT. This is because the change in the source side potential barrier by the drain field has been suppressed.

• Journal of Powder Materials
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• v.26 no.5
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• pp.375-382
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• 2019

Homogeneous multicomponent indium gallium zinc oxide (IGZO) ceramics for transparent electrode targets are prepared from the oxides and nitrates as the source materials, and their properties are characterized. The selected compositions were $In_2O_3:Ga_2O_3:ZnO$ = 1:1:2, 1:1:6, and 1:1:12 in mole ratio based on oxide. As revealed by X-ray diffraction analysis, calcination of the selected oxide or nitrides at $1200^{\circ}C$ results in the formation of $InGaZnO_4$, $InGaZn_3O_6$, and $InGaZn_5O_8$ phases. The 1:1:2, 1:1:6, and 1:1:12 oxide samples pressed in the form of discs exhibit relative densities of 96.9, 93.2, and 84.1%, respectively, after sintering at $1450^{\circ}C$ for 12 h. The $InGaZn_3O_6$ ceramics prepared from the oxide or nitrate batches comprise large grains and exhibit homogeneous elemental distribution. Under optimized conditions, IGZO multicomponent ceramics with controlled phases, high densities, and homogeneous microstructures (grain and elemental distribution) are obtained.

• Transactions on Electrical and Electronic Materials
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• v.16 no.2
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• pp.99-102
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• 2015

Thin film transistors (TFTs) with amorphous 2 wt% silicon-doped zinc tin oxide (a-2SZTO) channel layer were fabricated using an RF magnetron sputtering system, and the effect of post-annealing treatment time on the structural and electrical properties of a-2SZTO systems was investigated. It is well known that Si can effectively reduce the generation of oxygen vacancies. However, it is interesting to note that prolonged annealing could have a bad effect on the roughness of a-2SZTO systems, since the roughness of a-2SZTO thin films increases in proportion to the thermal annealing treatment time. Thermal annealing can control the electrical characteristics of amorphous oxide semiconductor (AOS) TFTs. It was observed herein that prolonged annealing treatment can cause bumpy roughness, which led to increase of the contact resistance between the electrode and channel. Thus, it was confirmed that deterioration of the electrical characteristics could occur due to prolonged annealing. The longer annealing time also decreased the field effect mobility. The a-2SZTO TFTs annealed at 500℃ for 2 hours displayed the mobility of 2.17 cm²/Vs. As the electrical characteristics of a-2SZTO annealed at a fixed temperature for long periods were deteriorated, careful optimization of the annealing conditions for a-2SZTO, in terms of time, should be carried out to achieve better performance.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.340-340
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• 2016

We have prepared alumina (Al2O3) doped zinc oxide (AZO) films by DC magnetron sputtering (MS) technique and obtained higher self surface texturing at a high target angle (f). We have characterized the films and applied it as a front electrode of a single junction amorphous silicon solar cell. At a lower f the deposited films show higher values of optical gap (Eg), charge carriers mobility & concentration, crystallite grain size and wider wavelength range of transmission. At higher target angle the sheet resistance, surface roughness, haze factor etc for the films increase. For f=72.5o the haze factor for diffused transmission becomes 6.46% at 540 nm wavelength. At f=72.5o the material shows a reduction in crystallinity and evolution of a hemispherical-type sub-micron surface textures. A Monte Carlo method (MCM) of simulation of the AZO film deposition shows that such an enhanced self-surface texturing of the films at higher f is possible.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.163-163
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• 2015

The effect of nematic liquid crystal(5CB-4-Cyano-4'-pentylbiphenyl) on the amorphous indium gallium zinc oxide thin film transistors(a-IGZO TFTs) was investigated. Through dropping the 5CB on the a-IGZO TFT's channel layer which is deposited by RF-magnetron sputtering, properties of a-IGZO TFTs was dramatically improved. When drain bias was induced, 5CB molecules were oriented by Freedericksz transition generating positive charges to one side of dipoles. From increment of the capacitance by orientation of liquid crystals, the drain current was increased, and we analyzed these phenomena mathematically by using MOSFET model. Transfer characteristic showed improvement such as decreasing of subthreshold slope(SS) value 0.4 to 0.2 and 0.45 to 0.25 at linear region and saturation region, respectively. Furthermore, in positive bias system(PBS), prevention effect for electron trapping by 5CB liquid crystal dipoles was observed, which showing decrease of threshold voltage shift [(${\delta}V$]_TH) when induced +20V for 1~1000sec at the gate electrode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.203-204
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• 2009

The Indium Zinc Tin Oxide (IZTO) thin films for flexible display electrode were deposited on poly carbonate (PC) and polyethersulfone(PES) and glass substrates at room temperature by facing targets sputtering (FTS). Two different kinds of targets were installed on FTS system. One is ITO ($In_2O_3$ 90 wt.%, $SnO_2$ 10 wt.%), the other is IZO ($In_2O_3$ 90 wt.%, ZnO 10 wt.%). As-deposited IZTO thin films were investigated by a UV/VIS spectrometer, an X-ray diffractometer (XRD), an atomic force microscope (AFM) and a Hall Effect measurement system. As a result, we could prepare the IZTO thin films with the resistivity of under $10^{-4}\;[{\Omega}{\cdot}cm]$ and IZTO thin films deposited on glass substrate showed an average transmittance over 80% in visible range (400~800 nm) in all IZTO thin films except in IZTO thin film deposited at $O_2$ gas flow rate of 0.1[sccm].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.10
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• pp.901-906
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• 2006

The transparent conductive oxide(TCO) has been used in necessity as front electrode for increasing efficiency of LED. In our paper, aluminium-doped zinc oxide films(AZO), which has transparent conducting were prepared with RF magnetron sputtering system on glass substrate(corning 1737) and annealed at $400^{\circ}C$ for 2 hr in vacuum ambient and $600^{\circ}C$ for 2hr with $O_2$ ambient respectively. The smooth AZO films were etched in diluted HCL(0.5 %) to examine the surface properties, which in ambient post-annealing process. We confirmed that the electric, structural and optical properties of textured AZO thin films, which implemented using the methods of XRD, FWHM, AFM and Hall measurement. The properties of textured AZO thin films especially depended on the ambient post-annealing process. We presumed that the change of transmittances as R G B LED and the ambient post-annealing process will be increasing the efficiency of LED.