• E2M - 전기 전자와 첨단 소재
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• 제8권3호
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• pp.261-266
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• 1995

In this study, PZT solutions added impurities of Yttrium acetate were prepared by sol-gel processing and were deposited on Pt/ $SiO_{2}$/Si substrates at 5000 rpm for 20 sec. using spin-coating method. Coated films were annealed at 700-750.deg. C for 30 min. using conventional furnace method. Variations of the crystallographic structure and microstructure of PZT thin films with adding impurities were observed using XRD and SEM, and the electrical properties, such as relative permittivity, tan .delta., hysteresis curves and leakage currents, were measured. As the yttrium contents were increased, the remanent polarization and coercive field were decreased. Variations of remanent polarizations and coercive fields of pure and yttrium doped specimens according to polarization reversal cycles were observed using hysteresis measurement. PZT thin films added $Y^{3+}$ ions were completely crystallized at 750.deg. C. $Y^{3+}$ ions, as donor impurity, substituted Pb.sup 2+/ ions located at A-site of perovskite structure. By substitution of $Y^{3+}$ ions, leakage currents became less by decreasing the space charges. Degradation of remanent polarizations of Yttrium added specimens after fatigue was not observed and coercive fields increased more than those of pure PZT thin films.

• 한국세라믹학회지
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• 제33권6호
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• pp.693-699
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• 1996

YIG precursor powder was obtained by homogeneous precipitation in chloride salt solution by thermal decom-position of urea. It was found that ferric ions precipitated prior to yttrium ions. The precipitate was minute and spherical in shape. The precipitate formed consisted of the mixture of amorphous and ferric oxyhydroxide. Crystallization of YIG was proceeded by solid state reaction of intermediate YFeO3 and Fe2O3 in the temperature range of 85$0^{\circ}C$ to 140$0^{\circ}C$. Single phase of YIG was obtained by heat-treatment of the powder at 140$0^{\circ}C$ for 6 hrs in air. The powder calcined was molded into pellets and sintered in air. The maximum density of 4,92 g/cm3(95.1% of theoretical density) was obtainable for the pellet sintered at 145$0^{\circ}C$ using the powder calcined at 90$0^{\circ}C$.

• Bulletin of the Korean Chemical Society
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• 제17권4호
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• pp.398-401
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• 1996

• 대한화학회지
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• 제16권1호
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• pp.1-5
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• 1972

The adsorption kinetics on a membrane filter have been studied by an introduction of acid or alkali in yttrium-90 solution. The change of the adsorption in the filtration process was determined by the filtrate activities with using a microsyringe filter holder connected with a syringe. The over all reaction rate obeyed a reversible first order reaction, and the rate constants thus obtained, showed the values of $k_1$ = 0.12 $sec^{-1}$ and $k_1'$ = 0.039 $sec^{-1}$. As a result of the present studies, it would be reasonable that the rate determining step of the adsorption reaction was the hydrolysis reaction of the adsorbed yttrium ions.

• Applied Microscopy
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• 제43권4호
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• pp.173-176
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• 2013

The oxidation behavior of the crystallized $Al_{87}Ni_3Y_{10}$ alloy has been investigated with an aim to compare with that of the amorphous $Al_{87}Ni_3Y_{10}$ alloy. The oxidation at 873 K occurs as follows: (1) growth of an amorphous aluminum-yttrium oxide layer (~10 nm) after heating up to 873 K; and (2) formation of $YAlO_3$ crystalline oxide (~220 nm) after annealing for 30 hours at 873 K. Such an overall oxidation step indicates that the oxidation behavior in the crystallized $Al_{87}Ni_3Y_{10}$ alloy occurs in the same way as in the amorphous $Al_{87}Ni_3Y_{10}$ alloy. The simultaneous presence of aluminum and yttrium in the oxide layer significantly enhances the thermal stability of the amorphous structure in the oxide phase. Since the structure of aluminum-yttrium oxide is dense due to the large difference in ionic radius between aluminum and yttrium ions, the diffusion of oxygen ion through the amorphous oxide layer is limited thus stabilizing the amorphous structure of the oxide phase.

• 한국세라믹학회지
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• 제53권6호
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• pp.635-640
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• 2016

Electrical behavior of AlN ceramics sintered with $Y_2O_3$ as a sintering aid has been investigated with respect to additional $TiO_2$ dopant. From the impedance spectroscopy, it was found that the grain and grain boundary conductivities have greatly decreased with addition of $TiO_2$ dopant. The $TiO_2$ dopant also increased the activation energy of the grain conductivity by about 0.37 eV; this increase was attributed to the formation of an associate between Al vacancies and Ti ions at the Al sites. Similarly, the electronic conductivity was reduced by $TiO_2$ addition. However, $TiO_2$ solubility in AlN grains was below the detection limit of typical EDX analysis. Grain boundary was clean, without liquid films, but did show yttrium segregation. The transference number of ions was close to 1, showing that AlN is a predominantly ionic conductor. Based on the observed results, the implications of using AlN applications as insulators have been discussed.

• Applied Science and Convergence Technology
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• 제26권2호
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• pp.26-29
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• 2017

Thin films of europium-doped yttrium oxide ($Y_2O_3$:Eu) were prepared on Si (100) substrates by using a radio frequency (RF) magnetron sputtering. After the deposition, the films were annealed at $1000^{\circ}C$ in an air ambient for 1 hour. X-ray diffraction analysis revealed that the $Y_2O_3$:Eu films had a polycrystalline cubic ${\alpha}-Y_2O_3$ structure. The as-deposited films showed no photoluminescence (PL), which was due to poor crystalline quality of the films. The crystallinity of the $Y_2O_3$:Eu films was significantly improved by annealing. The strong red PL emission was observed from the annealed $Y_2O_3$:Eu films and the highest intensity peak was centered at around 613 nm. This emission peak originated from the $^5D_0{\rightarrow}^7F_2$ transition of the trivalent Eu ions occupying the $C_2$ sites in the cubic ${\alpha}-Y_2O_3$ lattice. The broad PL excitation band was observed at wavelengths below 280 nm, which was attributed to the charge transfer transition of the trivalent Eu ion.

• 한국세라믹학회지
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• 제40권9호
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• pp.855-858
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• 2003

Liquid Phase Epitaxy (LPE)법으로 Yttrium Iron Garnet (YIG:Y$_3$Fe$_{5}$O$_{12}$) 단결정 후막을 성장시킬 때 PbO계 응제에서는 Pb 이온이 성장되는 결정내로 혼입되어 성장된 막의 격자상수를 증가시키고, 일축 자기이방성 상수값(Ku)을 변화시키거나 전기 전도도를 변화시킨다. 또한 광 흡수율을 증가시키는 등의 성장된 막의 물성에 악영향을 미친다. 열처리 후 Pb 이온의 휘발로 인한 결정내의 농도감소로 성장된 단결정 후막의 격자상수가 평균 0.0115$\AA$ 감소하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.142-142
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• 2009

Bismuth-substituted yttrium iron garnet(Bi-YIG; $Bi_xY_{3-x}Fe_5O_{12}$, x=0, 0.5, 1.0, 1.5, 2.0) thin films were fabricated on glass substrates using a metal organic decomposition (MOD) method. The dielectric property was measured by NSMM(Near-field scanning microwave microscopy) system that operating frequency is 4 Ghz. The obtained reflection coefficient $S_{11}$ of the Bi:YIG thin films with different bismuth concentration was increased as the bismuth concentration increased due to the lattice mismatch and vacancy of ions because of a lager ionic radius of bismuth ion than yttrium ion.

• 한국결정성장학회지
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• 제11권5호
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• pp.203-206
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• 2001

The applicability of shaped growth of yttrium orthovanadate was approved by successful growth of rod-like single crystals with the rectangular shape. Nd-doped single crystals with content of $Nd^{3+}$ ions of 1,2,3,5 atomic % in the starting melt were grown by the EFG technique with the size up to $10^{*}10mm$ in section and up to 85 mm in length. For the testing of the multiple growth of the orthovanadates, two and three Nd-and Yb-doped $YVO_{4}$ single crystals were grown by the EFG technique simultaneously up to 110 mm in length.