• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.97-97
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• 2003

Composition in the (Znl-xNix)2TiO4+ yTiO2 system (x=0-0.5, y=0-0.35) were synthesized via the solid-state reaction route. The incorporation of titanium, in the form of TiO2, in (Znl-xNix)2TiO4 spinel ceramics were investigated by analyzing the crystal structure and measuring the dielectric properties. The result of the crystal structure analysis suggested that TiO2 level of 0.01 y 0.33 could be incorporated into the (Znl-xNix)2TiO4 spinel. The change of incorporated TiO2 level is related with Co-content as a inverse proportion and the variation of lattice parameter and dielectric properties were supported the result.

• Journal of the Korean Ceramic Society
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• v.28 no.3
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• pp.225-233
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• 1991

In this study, we tried to find out the appropriate synthetic condition and magnetic properties of Ni-Zn ferrite {(NixZn1-x)Fe2O4} powders (where X=0, 0.1, 0.2, 0.3, ……0.9, 1). Ferrite powders were prepared by wet-direct method at 86℃ for 6hrs from FeCl36H2O, NiCl26H2O, and ZnCl2. The powders of (NixZn1-x)Fe2O4 (where X=0.4, 0.5, 0.6) have a good crystallinity, but the other ferrite powders consist of crystal and precursor ferrite. The ferrite powder's lattice constant is increased when ratio of ZnO contant is increased in the ferrite composition. And initial permeability was measured after sintering, result indicated regular pattern except (Ni0.4Zn0.6)Fe2O4 when the frequency were changed 10KHz to 10MHz.

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.11a
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• pp.22-22
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• 1996

• Journal of the Korean Ceramic Society
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• v.37 no.2
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• pp.164-167
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• 2000

Flue gases in the iron foundry consist of 15~20% CO2 as an air pollution gas whose emission should be mitigated in order to protect the environment. In the present study, ultrafine powders of NixZn1-xFe2O4 as a potential catalyst for the CO2 decomposition were prepared by the coprecipitation methods. Oxygen deficient ferrites (MeFe2O4-$\delta$) can decompose CO2 as C and O2 at a low temperature of about 30$0^{\circ}C$. The XRD result of synthesized ferrites showed the spinel structure of ferrites and ICP-AES and EDS quantitative analyses showed the composition similar with initial molar ratios of the mixed solution prior to reaction. The BET surface area of the (Ni, Zn)-ferrites was about 77~89.5$m^2$/g and their particle size was observed about 10~20 nm. The CO2 decomposition efficiency of the oxygen deficient (Nix, Zn1-x)-ferrites was the highest at x=0.3, and the ternary (Ni, Zn)-ferrites was better than that of binary Ni-ferrites.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 1996.09a
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• pp.111-116
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• 1996

To realize the RF layer of Rubber Ferrite-Air-Solid Ferrite(RF-A-F) that proposed by Y.Naito it is tried to grasp the formulation of composition by varying the ratio of mole and element of Complex Isotropic Ferrite Nix-A0.1-Zn(1-x-0.1)*Fe2O4 As a result it was found that the characteristics of the electromagnetic wave absorber constructed by the selected formulation of compositionin in RF-A-F type were improved.

• Journal of the Korean Magnetics Society
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• v.8 no.5
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• pp.295-299
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• 1998

The magnetic thin films can be prepared without vacuum process and under the low temperature(<100 $^{\circ}C$) by ferrite plating. We have performed ferrite plating of $Ni_xFe_{3-x}O_4$ (x=0.162~0.138) films on cover glass at the substrate temperature 80 $^{\circ}C$ and pH range of the oxidizing solution, 7.1~8.8. the crystal structure of the samples has been identified as a single phase of polycrystal spinel structure by x-ray diffraction technique. The deposition rate and the grain size of the film increased with the pH of oxidizing solution. The coercive force (H_C)$ decreased with the pH of oxidizing solution.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.5
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• pp.724-728
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• 1990

The X-ray diffraction pattern, electrical resistance, density and critical temperature of a series of YBa2(Cu3-xNix)O7-\ulcornersamples (0\ulcorner\ulcorner.5) were investigated with the increase of the Ni content. The samples show a principal 1.2.3-like phase with well resolved orthorhombic peaks. The final pattern of the x=0.1 sample appears to be well reacted orthorhombic YBa2(Cu,Ni)3O7-\ulcornerwith minor impurities and an appreciable amorphous fraction. From the above results, we conclude that Ni does not play an important role for the superconductivity in the Y-Ba-Cu-O system.

• Bulletin of the Korean Chemical Society
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• v.16 no.11
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• pp.1084-1088
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• 1995

A complete solid solution (SrLaAl1-xNixO4) between insulating SrLaAlO4 and metallic SrLaNi(Ⅲ)O4 oxides were prepared under high oxygen pressure (1.5 kbar, 800 ℃). They have tetragonal K2NiF4-type structure in all the solid solution range. Compared with lattice parameters of the same solid solution prepared under normal condition (1 bar, 1200 ℃), large decrease in the c-parameter was induced by high pressure treatment while no noticeable variation of the a-parameter was observed. Although marked changes of structural parameters, magnetic susceptibilities, and electron paramagnetic resonance spectra were consistently occurred before and after x=0.5, overall behaviors were essentially the same with those of solid solution prepared under normal condition. Such a phenomenon is explained by assuming the formation of partially filled narrow σ*x2-y2 band for x>0.5. Lattice contraction along the c-axis by high pressure treatment seems not to broaden this band. Particularly, the continuous absorption characteristic of a high free carrier concentration for x>0.5 and the absence of Ni-O in-plane stretching mode in the infrared absorption spectra supports this picture. However, the conductivities increasing with temperature for all solid solution suggest that some localization character, of probably Anderson type, remains for x>0.5.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.1
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• pp.25-32
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• 2007

We investigated the silicide reaction stability between 10 nm-Col-xNix alloy films and silicon substrates with the existence of 4 nm-thick natural oxide layers. We thermally evaporated 10 nm-Col-xNix alloy films by varying $x=0.1{\sim}0.9$ on naturally oxidized single crystal and 70 nm-thick polycrystalline silicon substrates. The films structures were annealed by rapid thermal annealing (RTA) from $600^{\circ}C$ to $1100^{\circ}C$ for 40 seconds with the purpose of silicidation. After the removal of residual metallic residue with sulfuric acid, the sheet resistance, microstructure, composition, and surface roughness were investigated using a four-point probe, a field emission scanning electron microscope, a field ion bean4 an X-ray diffractometer, and an Auger electron depth profiling spectroscope, respectively, to confirm the silicide reaction. The residual stress of silicon substrate was also analyzed using a micro-Raman spectrometer We report that the silicide reaction does not occur if natural oxides are present. Metallic oxide residues may be present on a polysilicon substrate at high silicidation temperatures. Huge residual stress is possible on a single crystal silicon substrate at high temperature, and these may result in micro-pinholes. Our results imply that the natural oxide layer removal process is of importance to ensure the successful completion of the silicide process with CoNi alloy films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.381-384
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• 2004

The stochiometric nix of evaporating materials for the $AgInS_2$ single crystal thin films were prepared from horizontal furnace. The polycrystal structure obtaind from the power x-ray diffraction was chalcopyrite. The lattice costants $a_0\;and\;c_0$ were $a_0=5.86(5.82)\;A,\;c_0=11.355(11.17)\;A$. To obtains the single crystal thin films, $AgInS_2$ mixed crystal were deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy(HWE) system. The temperates of the source and the substrate were $590^{\circ}C\;and\;450^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$), the ratio of photocurrent to dark current (pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time.