• 제목/요약/키워드: x-ray structure

검색결과 3,689건 처리시간 0.033초

X-선과 중성자 회절을 이용한 강유전체 단결정 $LiN(D_xH_{1-x}){_4}SO_4$의 결정구조 연구 (Crystal Structure Analysis of $LiN(D_xH_{1-x}){_4}SO_4$ by X-ray and Neutron Diffraction)

  • 김신애;김성훈;소지용;이정수;이창희
    • 한국광물학회지
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    • 제20권4호
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    • pp.351-356
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    • 2007
  • 수소원자를 포함한 강유전체 $Li(NH_4)SO_4$의 중수소 치환형인 $Li(ND_4)SO_4$ 단결정에 대해 X-선과 중성자 회절법으로 결정구조를 연구하였다. 이 결정은 상온에서 사방정계이고 공간군은 $P2_1nb$이다. 격자상수는 $a=5.2773(5)\;{\AA},\;b=9.1244(23)\;{\AA},\;c=8.7719(11)\;{\AA}$이며 Z=4이다. 한국원자력연구원의 연구용 원자로인 하나로에 설치된 중성자 4축 단결정 회절장치로 중성자데이터를 수집하였으며, X-선 회절데이터는 일본 동북대학교 물리학과에서 측정하였다. X-선 회절법으로 수집한 1450개의 독립 회절반점에 대하여 최소자승법으로 정밀화하여 최종 신뢰도값 R=0.070을 얻었으며, 중성자 회절법으로는 745개의 회절반점에 대하여 R=0.049을 얻었다. X-선 회절데이터 분석 결과 결정구조 내의 수소원자 중 1개의 위치만을 얻었으나, 중성자 회절법으로는 $NH_4$ 사면체의 수소/중수소원자의 위치는 물론 H를 치환해서 들어간 D의 점유율을 정련하여 측정시료의 평균화학식이 $LiND_{3.05}H_{0.95}SO_4$임을 밝혔다.

Micro X-ray CT를 이용한 글라스 비드의 3차원 간극 구조 정량화 (Quantification of 3D Pore Structure in Glass Bead Using Micro X-ray CT)

  • 정연종;윤태섭
    • 한국지반공학회논문집
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    • 제27권11호
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    • pp.83-92
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    • 2011
  • 무질서하고 불균질한 형상을 갖는 지반 재료 내 간극 구조는 하중에 의한 재료의 변형 및 간극 내 유체의 흐름 등 물리 역학적 거동에 중요한 영향 인자이다. 최근 들어 X-ray CT에 의한 비파괴 검사를 통해 지반 재료의 내부 구조를 마이크로미터 단위의 높은 해상도를 통해 평가하는 기법이 사용되고 있다. CT 이미지는 재료의 많은 정보를 포함하고 있음에도 그에 따른 이미지 해석 기법의 개발이 다소 미흡하여 2, 3차원 이미지의 정성적 관찰 및 간극비와 같은 거시적인 물성치 획득만이 이루어지고 있다. 본 연구에서는 연속적으로 획득된 글라스 비드의 2차원 CT 이미지에 기반하여 3차원 입자 및 간극 구조를 형성하고, 복잡한 간극구조를 간극셀과 간극채널로 정량적 분리를 실시하였다. 이를 위해 좌표 변환법, 이진화, 들로네 삼각망, 그리고 유클리디안 거리변환법과 같은 이미지 프로세싱 기법을 3차원 CT 이미지에 적용하였고 불균질한 글라스 비드의 간극구조에 대해 정량적으로 간극셀의 분포 및 간극간의 연결도 평가가 가능함을 확인하였다.

벤토나이트에 첨가한 은 이온에 의한 아이오딘 이동 저지 메커니즘 규명을 위한 X-선 흡수 스펙트라 분석 (X-ray Absorption Spectra Analysis for the Investigation of the Retardation Mechanism of Iodine Migration by the Silver Ion Added to Bentonite)

  • 김승수;김민규;백민훈;최종원
    • 방사성폐기물학회지
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    • 제8권3호
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    • pp.201-205
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    • 2010
  • 고준위방사성폐기물에서 유출되어 나오는 아이오딘의 이동을 저지하기 위하여 은을 흡착시킨 벤토나이트 블록에 NaI 용액을 흘려주었을 때 대부분의 아이오딘이 흡착되었다. 이 은이온에 의한 아이오딘의 저지 메커니즘을 상세히 조사하기 위하여 아이오딘과 접촉하기 전후의 은이 흡착된 벤토나이트의 X-ray Absorption Near Edge Structure (XANES)와 Extended X-ray Absorption Fine Structure (EXAFS) 스펙트 럼과 표준물질로서 AgO, $Ag_2O$, AgI의 스펙트럼을 비교하였다. 그 결과, 벤토나이트에 흡착되었던 은이 떨어져 나와 AgI 침전 클러스터를 형성함으로서 아이오딘의 이동이 지연되는 것으로 생각된다.

Synchrotron X-ray 미세영상기법을 이용한 식물 목질부 내부 수액 유동의 계측 (In Vivo Visualization of Flow in Xylem Vessels of a Bamboo Leaf Using Synchrotron X-ray Micro Imaging Technique)

  • 김양민;이상준
    • 대한기계학회논문집B
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    • 제27권11호
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    • pp.1612-1617
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    • 2003
  • Synchrotron X-ray micro imaging technique was employed to non-invasively monitor the water flow inside xylem vessels in a bamboo leaf. The phase contrast X-ray images clearly visualized plant anatomy and the rise of a water front inside the vessels. Consecutive X-ray images taken for 60 seconds revealed water rise kinetics against gravity in the xylem of a cut dry leaf taken from a bamboo tree. For the first time, traces of water rise, variation of contact angle between water and xylem wall as well as the internal structure of xylem were obtained. In xylem vessels, a repeating flow pattern has a typical flow velocity of 30.7$\mu\textrm{m}$/s and faster flow is established intermittently. It is concluded that the transmission type of X-ray micro imaging can be used as a powerful tool to investigate the ascent of sap in the xylem vessels at a resolution higher than that of MRI.

Analysis of a Spun-CNT Based X-ray Source

  • Kim, Hyun Suk;Castro, Edward Joseph D.;Hun, Choong
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.639-639
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    • 2013
  • In this research we report the significant contribution of the as-spun multi-walled carbon nanotube (MWCNT) on the x-ray images formation using a low tube voltage x-ray source. The MWCNT, which was used for the fabrication of the spun CNT, was grown using a microwave plasma-enhanced chemical vapor deposition machine. Electrical-optics simulation software was utilized to determine the electron field emission trajectory of the triode-structure-as-spun CNT-based x-ray source. It was shown that a significant amount of converging electrons hit the target anode producing a clear x-ray image. These x-ray images where produced at a small amount of anode current of 0.67 mA at a tube voltage of 5 kV with the gate voltage of 0 V. Also, comparisons of the radiographs at various exposure times of the sample where analyzed with and without an x-ray dose filter. Results showed that spatially-resolved images were formed using the as-spun CNT at a low tube voltage with a $54-{\mu}m$ Al x-ray filter. This study can be used for low-voltage medical applications.

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X-ray Sensitivity of Hybrid-type Sensor based on CaWO4-Selenium for Digital X-ray Imager

  • Park, Ji-Koon;Park, Jang-Yong;Kang, Sang-Sik;Lee, Dong-Gil;Kim, Jae-Hyung;Nam, Sang-Hee
    • Transactions on Electrical and Electronic Materials
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    • 제5권4호
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    • pp.133-137
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    • 2004
  • The development of digital x-ray detector has been extensively progressed for the application of various medical modalities. In this study, we introduce a new hybrid-type x-ray detector to improve problems of a conventional direct or indirect digital x-ray image technology, which composed of multi-layer structure using a CaWO$_4$ phosphor and amorphous selenium (a-Se) photoconductor. The leakage current of our detector was found to be ∼180 pA/cm$^2$ at 10 V/m, which was significantly reduced than that of a single a-Se detector. The x-ray sensitivity was measured as the value of 4230 pC/cm$^2$/mR at 10 V/m. We found that the parylene thin film between a CaWO$_4$ phosphor and an a-Se layer acts as an insulator to prevent charge injection from indium thin oxide (ITO) electrode into an a-Se layer under applied bias.

Zinc Sulfide-selenium X-ray Detector for Digital Radiography

  • Park, Ji-Koon;Kang, Sang-Sik;Kim, Jae-Hyung;Mun, Chi-Woong;Nam, Sang-Hee
    • Transactions on Electrical and Electronic Materials
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    • 제3권4호
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    • pp.16-20
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    • 2002
  • The high bias voltage associated with the thick layer (typically 500-1000 ㎛) of selenium required to have an acceptable x-ray absorption in radiography and fluoroscopy applications may have some practical inconvenience. A hybrid x-ray detector with zinc sulfide-amorphous selenium structure has been developed to improve the x-ray sensitivity of a a-Se based flat-panel digital imaging detector. Photoluminescence(PL) characteristic of a ZnS:Ag phosphor layer showed a light emission peak centered at about 450 nm, which matches the sensitivity spectrum of selenium. The dark current of the hybrid detector showed similar characteristics with that of a a-Se detector. The x-ray sensitivity of hybrid and a-Se x-ray detector was 345 pC/㎠/mR and 295 pC/㎠/mR at an applied voltage of 10 V/㎛, respectively. The purpose of this study was to evaluate the pertinence of a solution using a thin selenium layer, as a photosensitive converter, with a thick coating of silver doped zinc sulfide phosphor.

A Polycrystalline CdZnTe Film and Its X-ray Response Characteristics for Digital Radiography

  • Kim, Jae-Hyung;Park, Chang-Hee;Kang, Sang-Sik;Nam, Sang-Hee
    • Transactions on Electrical and Electronic Materials
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    • 제4권5호
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    • pp.15-18
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    • 2003
  • The Cd$\_$1-x/Zn$\_$x/Te film was produced by thermal evaporation for the flat-panel X-ray detector. The crystal structure and the surface morphology of poly crystalline Cd$\_$1-x/Zn$\_$x/Te film were examined using XRD and SEM, respectively. The leakage current and X-ray sensitivity of the fabricated films were measured to analyze the X-ray response characteristic of Zn in a polycrystalline CdZnTe thin film. The leakage current and the output charge density of Cd$\_$0.7/Zn$\_$0.3/Te thin film were measured to 0.3 1nA/$\textrm{cm}^2$ and 260 pC/$\textrm{cm}^2$ at an applied voltage of 2.5 V/$\mu\textrm{m}$, respectively. Experimental results showed that the increase of Zn doping rates in Cd$\_$1-x/Zn$\_$x/Te detectors reduced the leakage current and improved the X-ray sensitivity significantly. The leakage current was drastically diminished by the formation of thin parylene layer in the Cd$\_$0.7/Zn$\_$0.3/Te detector.

흉부 왼쪽 엑스선검사 시 위치 잡기의 중요성 (The Importance of Positioning in Left Lateral Chest X-Ray Examination)

  • 조평곤
    • 대한방사선기술학회지:방사선기술과학
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    • 제46권4호
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    • pp.287-294
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    • 2023
  • This study was conducted to ultimately reduce unnecessary radiation exposure by emphasizing the need and importance of correct positioning by examining the positioning relationship of anatomical structures in the human body and changes in X-ray images according to changes in patient positioning during the left lateral chest X-ray examination. This study investigated and analyzed previously published papers and books on the left lateral chest X-ray examination to find out the importance of positioning in the left lateral chest X-ray examination. To find out the importance of correct positioning in the left lateral chest X-ray, we compared three images of incorrectly positioned right thorax and left thorax rotated forward and the lower median surface of the body leaning against the image receptor. In the left lateral chest examination, a distorted image was obtained in which the shape of the anatomical structure observed in the image was changed according to the presence or absence of rotation of the patient and the inclination of the median visual surface. X-ray images with the most accurate and large amount of information were obtained from X-ray images with the correct positioning performed during left lateral chest X-ray examination. Therefore, It is believed that the left lateral chest X-ray examination will have beneficial effects such as providing accurate medical information, preventing misdiagnosis, reducing social costs, and ultimately reducing radiation exposure.

Design of an Electron Ohmic-Contact to Improve the Balanced Charge Injection in OLEDs

  • 박진우;임종태;염근영
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.283-283
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    • 2011
  • The n-doping effect by doping metal carbonate into an electron-injecting organic layer can improve the device performance by the balanced carrier injection because an electron ohmic contact between cathode and an electron-transporting layer, for example, a high current density, a high efficiency, a high luminance, and a low power consumption. In the study, first, we investigated an electron-ohmic property of electron-only device, which has a ITO/$Rb_2CO_3$-doped $C_{60}$/Al structure. Second, we examined the I-V-L characteristics of all-ohmic OLEDs, which are glass/ITO/$MoO_x$-doped NPB (25%, 5 nm)/NPB (63 nm)/$Alq_3$ (32 nm)/$Rb_2CO_3$-doped $C_{60}$(y%, 10 nm)/Al. The $MoO_x$doped NPB and $Rb_2CO_3$-doped fullerene layer were used as the hole-ohmic contact and electron-ohmic contact layer in all-ohmic OLEDs, respectively, Third, the electronic structure of the $Rb_2CO_3$-doped $C_{60}$-doped interfaces were investigated by analyzing photoemission properties, such as x-ray photoemission spectroscopy (XPS), Ultraviolet Photoemission spectroscopy (UPS), and Near-edge x-ray absorption fine structure (NEXAFS) spectroscopy, as a doping concentration at the interfaces of $Rb_2CO_3$-doped fullerene are changed. Finally, the correlation between the device performance in all ohmic devices and the interfacial property of the $Rb_2CO_3$-doped $C_{60}$ thin film was discussed with an energy band diagram.

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