• Journal of the Korean Ceramic Society
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• v.40 no.8
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• pp.746-750
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• 2003

Using the Czochralski method, Er$_2$O$_3$ doped near stoichiometric LiNbO$_3$ single crystals were grown 15~20 mm in diameter and 30-35 mm in length for Z-axis. Lattice constants were inspected by the X-Ray Diffractometer (XRD) and through Fourier Transform-Infrared Spectrophotometer (FT-IR), it observed absorption band. Also, the distributions of Er concentration were confirmed by the Electron Probe Micro Analysis (EPMA).

• Journal of Korean Vacuum Science & Technology
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• v.6 no.2
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• pp.84-87
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• 2002

The Si$_{1-x}$ Gex/Si surface alloy (x = 0.3, 0.4 and 0.5), which are prepared by solid source MBE and have the SiGe epilayer thickness of 50$\AA$, are annealed with different parameters. The surface structure analyses of the heterostructure samples are made on a triple-axis X-ray diffractometer in grazing incidence X-ray diffraction (GIXRD) geometry. It has been found that with different annealing time (1.5h, 18h, 64h) and annealing temperature (550 $^{\circ}C$, 750 $^{\circ}C$), the SiGe epilayer experienced different strain relaxation process, which was deduced from the GIXRD measurements of the in-plane (220) diffraction peak of Si(001) substrate and the relevant (220) surface diffraction of SiGe epilayer. The results show that the stress relieving and the lateral strain relaxation in the SiGe/Si heterostructure can be promoted by correct annealing, which is very helpful for the preparation of SiGe/Si strained superlattice with fine strain crystallization..

• Journal of the Mineralogical Society of Korea
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• v.15 no.2
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• pp.140-144
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• 2002

The sample environment at high temperature for the four circle diffractometer at HANARO in Korea Atomic Energy Research Institute is developed. The performance test was carried out for a structurally known sample through the high temperature experiment with this equipment. In this study we found out that the developed sample environment is stable for a long time experiment at over 900 K. By the neutron diffraction from a single crystal of $LiTaO_3$(phase transition temperature about 900 K) at 298 and 913 K, the lithium atomic positions at both temperatures and disordered state of lithium atom at high temperature were confirmed. These are hardly possible to determine by the conventional X-ray diffraction method.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.456-462
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• 2002

In the present work, a low cost and fine pitch bumping process by electroless Ni/immersion Au UBM (under bump metallurgy) and stencil printing for the solder bump on the Al pad is discussed. The Chip used this experimental had an array of pad 14x14 and zincate catalyst treatment is applied as the pretreatment of Al bond pad, it was shown that the second zincating process produced a dense continuous zincating layer compared to first zincating. Ni UBM was analyzed using Scanning electron microscopy, Energy dispersive x-ray, Atomic force microscopy, and X-ray diffractometer. The electroless Ni-P had amorphous structures in as-plated condition. and crystallized at 321 C to Ni and Ni$_3$P. Solder bumps are formed on without bridge or missing bump by stencil print solder bump process.

• Korean Journal of Materials Research
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• v.19 no.4
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• pp.203-206
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• 2009

$Sn_XSe_{100-X}$ (15|X|30) alloys have been studied to explore their suitability as phase change materials for nonvolatile memory applications. The phase change characteristics of thin films prepared by a Radio Frequency (RF) magnetron co-sputtering system were analyzed by an X-ray diffractometer and 4-point probe measurement. A phase change static tester was also used to determine their crystallization under the pulsed laser irradiation. X-ray diffraction measurements show that the transition in sheet resistance is accompanied by crystallization. The amorphous state showed sheet resistances five orders of magnitude higher than that of the crystalline state in $Sn_XSe_{100-X}$ (x = 15, 20, 25, 30) films. In the optimum composition, the minimum time of $Sn_XSe_{100-X}$ alloys for crystallization was 160, 140, 150, and 30ns at 15mW, respectively. The crystallization temperature and the minimum time for crystallization of thin films were increased by increasing the amount of Sn, which is correlated with the activation energy for crystallization.

• Korean Journal of Crystallography
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• v.4 no.1
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• pp.25-35
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• 1993

Tetra-tert-butyl-tetrapropionycalix (4) arena (C56H7208) is Triclinic, space group Pl, with a=13.664(5), b=17.585(5), c=12.863(2)A, a=109.33(2), B=111.97(2), γ=76.45(3) ˚, Z=2, V=2684.08A3, D, =1.152g/cm3, Dm=1.15g/cm3. The intensity data were collected on an Enraf-Nonius CAD-4 Diffractometer with a graphite monochromated Mo-Ka radiation. The structure was solved by direct methods and refined by leastsquares methods. The final R factor was 0.084 for 2561 observed reflections. The configuration of the molecule from the X-ray crystallographic investigation has the partial cone conformation, three tort-butylphenyls are down and a tort-butylphenyl is up. Three propionyloxy groups direct toward the exterior of the macrocycle cavity.

• Korean Journal of Crystallography
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• v.8 no.2
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• pp.111-118
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• 1997

The structrue of hydroxy-bisbenzoyloxy-allyloxycalix[4]arene (C45H36O6) has been determined by X-ray crystallography. The crystals are monoclinic, space group P21, unit cell constants a=11.045(3), b=33.545(2) c=10.319(4)Å, β=113.86(2)˚, Z=4, V=3496.0(1.8) Å3, DC=1.28 gcm-3. The intensity data were collected on an Enraf-Noninus CAD-4 Diffractometer with a graphite monochromated Mo-Kα radiation. The structure was solved by direct method and refined by full-matrix least-squares calculations to a final R value of 0.076 for 2945 observed reflections. Two independent enantiomeric molecules are crystallized in a 1:1 racemate mixture. They have the flattened cone conformation with the flattening hydroxy1 pheny1 rings. There is an intramolecular hydrogen bond in both molecules.

• Membrane Journal
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• v.25 no.2
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• pp.191-201
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• 2015

We have studied on the preparation of $TiCo_xFe_{1-x}$(x=0.50~1.00) system alloy, the characteristics of $TiCo_xFe_{1-x}$(x=0.50~1.00) system alloy by X-ray diffractometer (XRD), pressure composition temperature (PCT) curve, scanning electron microscopy (SEM) and the $H_2-N_2$ gas mixture separation of $TiCo_xFe_{1-x}$(x=0.50~1.00)- stainless steel (SS) composite membranes. The formation of $TiCo_xFe_{1-x}$(x=0.50~1.00) system alloys with cubic crystal same as TiCo was confirmed by X-ray diffractometer. $TiCo_xFe_{1-x}$(x=0.50~1.00) system alloys showed the hysteresis at $120^{\circ}C$. As the Fe content of $TiCo_xFe_{1-x}$(x=0.50~1.00) system alloys increased, the hysteresis was increased both range x=0.90~1.00 and x=0.55~0.60, and the range x=0.55~0.90 gave decreased hysteresis. $TiCo_{0.55}Fe_{0.45}$ alloy was the one showed the lowest hysteresis among them. The lowest value of hydrogen permeation pressure of $TiCo_xFe_{1-x}$(x=0.50~1.00)-SS composite membrane was $TiCo_{0.55}Fe_{0.45}$-SS composite membrane with the value of 2.5 atm at $120^{\circ}C$; otherwise, $TiCo_{0.90}Fe_{0.10}$-SS composite had the highest pressure value among the membranes with the value of 10 atm. $TiCo_{0.55}Fe_{0.45}$-SS composite membrane was the best to separate the $H_2-N_2$ gas mixture excellently among the $TiCo_xFe_{1-x}$(x=0.50~1.00)-SS composite membranes since $TiCo_{0.55}Fe_{0.45}$ had the least hysteresis, and hydrogen permeation pressure was the lowest with value of 2.5 atm.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.93-97
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• 2001

We introduce the structure and the capability of a UHV x-ray scattering system constructed for surface structural studies. The system consists of vacuum parts required for surface preparation and a vertical-horizontal diffractometer using the S2D2 geometry. To illustrate the capability of the system, we measured the 7$\times$7 reconstruction peak of a Si (111) surface. The peak count rate was 216 counts/sec and the domain size of the 7$\times$7 reconstruction was larger than 1600 $\AA$. This demonstrates that the system is capable of providing surface structural information.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.137-137
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• 2009

Indium Gallium Zinc Oxide (IGZO) thin films for TFT channel were prepared by using a Facing Target Sputtering (FTS) system. To investigate the effect of oxygen on the optical and the electrical properties of amorphous InGaZnO(a-IGZO), we prepared thin films by FTS system in various oxygen atmospheres at room temperature. As-deposited IZTO thin films were investigated by using a UV/VIS spectrometer, an X-ray diffractometer, a Hall Effect measurement system, and an atomic force microscope. The quantitative analysis of the films was carried out by using the energy dispersive X-ray (EDX) technique for the as-deposited film.