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Inkjet 공정에서 발생하는 TIPS Pentacene Crystalline Morphology 변화에 따른 OTFT 특성 연구

  • Kim, Gyo-Hyeok;Seong, Si-Hyeon;Jeong, Il-Seop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.379-379
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    • 2013
  • 본 논문에서는 Normal ink jetting 공법으로 OTFT를 제작할 때 coffee stain effect에 의해서 반도체 소자의 특성이 저하되는 것을 극복하기 위해서 동일한 위치에 동일한 부피로 Droplet을 형성하는 Multiple ink jetting 공법을 통해 TIPS pentacene 결정의 Morphology와 전기적 특성이 어떻게 변화하는지 알아 보았다. Multiple ink jetting의 drop 횟수가 증가할수록 coffee stain effect에 의해서 형성된 가운데 영역의 Dendrite grain이 점점 작아지다가 7 Drops 이후로는 Big grain 만 남게 되었다. Active layer의 표면 Roughness는 drop 횟수가 증가할수록 낮아지다가 일정 count 이후로는 다시 높아지는 것을 확인할 수 있었다. 전계 이동도(mobility)는 drop 횟수가 증가할수록 커지다가 일정 count 이후로는 saturation되는 것을 확인할 수 있었다. Multiple ink jetting에 의해서 만들어진 OTFT 소자의 전계 이동도(mobility)는 1 drop과 10 drops에서 각각 0.0059, 0.036 cm2/Vs 로 6배 정도 차이가 있었다. 이것은 첫 drop에 의해 만들어진 가운데 Dendrite grain 영역이 Multiple ink jetting을 반복하면서 점점 작아지게 되어 사라지고 두꺼운 Grain 영역만 남게 된 것으로 판단된다. Vth 와 On/Off ratio는 1 drop과 10 drops에서 각각 -3 V, -2 V 그리고 $3.3{\times}10^3$, $1.0{\times}10^4$를 보였다. OTFT의 substrate로 Flexible한 polyethersulfone (PES) 기판을 사용하였고, 절연체로 Spin coating된 Poly-4-vinylphenol (PVP)가 사용되었으며, Gate 및 Source/Drain 전극은 Au를 50 nm 두께로 증착하였다. Channel의 width와 length는 각각 100 um, 40 um 였고, Gate 전극 위에 Active layer를 형성한 Bottom gate 구조로 제작되었다. Ink jet으로 제작된 TIPS pentacene의 결정성은 x-ray diffraction (XRD)와 광학 현미경으로 분석하였고 Thickness profile은 알파스텝 측정기를 이용하였으며, OTFT의 전기적 특성은 Keithley-4,200을 사용하여 측정하였다.

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A Mutual Authentication Protocol based on Hash Function for Efficient Verification of User Entitlement in IPTV Service (IPTV 서비스에서 사용자의 수신자격을 효율적으로 판별할 수 있는 해쉬 함수 기반의 상호 인증 프로토콜)

  • Jeong, Yoon-Su;Kim, Yong-Tae;Jung, Yoon-Sung;Park, Gil-Cheol;Lee, Sang-Ho
    • Journal of KIISE:Information Networking
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    • v.37 no.3
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    • pp.187-197
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    • 2010
  • The fusion stream of recent broadcasting and communication make multimedia content served in the area of broadcasting into IPTV service which transmits it through high-speed internet, cable TV net and satellite net in realtime. However, as the digital broadcasting service is extended to various media, the security of IPTV service content provided to users by service provider is not fully supported by CAS(Conditional Access System) provided by existing broadcasting system. This paper proposes interactive certification protocol which can efficiently distinguish the receiving-qualification of user between Set-Top Box and Smart Card which are parts of configurations for IPTV system. The proposed protocol uses hash function to make Set-Top Box transmit receiving-qualification about the channel fee which user pays more properly than existing protocol. Also, the proposed protocol uses session key generated between receiver and smart card through inter certification process and encrypts EMM not the service to be used by anyone illegally.

How Does Yoga Breathing Affect Prefrontal QEEG Quotients?

  • Kim, Eunmi
    • Science of Emotion and Sensibility
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    • v.16 no.1
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    • pp.75-84
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    • 2013
  • The underlying changes in biological processes that are associated with reported changes in mental and physical health in response to yoga breathing ($pr{\bar{a}}n{\bar{a}}y{\bar{a}}ma$) have not been systematically explored yet. In this study, the effects of a yoga breathing program on prefrontal EEG were tested with middle-aged women. Participants were collected as volunteers and controlled into two groups. Two channel EEG was recorded in the prefrontal region (Fp1, Fp2) from the yoga breathing group (n=17) and control group (n=17). QEEG quotients were transformed from the EEGs and analyzed by the ANOVAs on gain scores. As a result, ${\alpha}/{\delta}$ (left, right) and CQ (correlation quotient) for yoga breathing participants were significantly decreased compared to control group (p<.05). ${\alpha}/{\beta}_H+{\alpha}/{\delta}$ (left, right) were increased significantly (p<.05). For those significantly changed QEEG quotients, the interaction effects of Group x prefrontal alpha (${\alpha}$) and beta (${\beta}$) asymmetry were tested. Only the ${\alpha}$ asymmetry showed main effect on the gain score of ${\alpha}/{\beta}_H+{\alpha}/{\delta}$ (right) with F (1, 34)=5.694 (p<.05). Pearson's correlation coefficient between ${\alpha}$ asymmetry and gain score of ${\alpha}/{\beta}_H+{\alpha}/{\delta}$ (right) was .374 (p<.05). The gain score of ${\alpha}/{\beta}_H+{\alpha}/{\delta}$ (right) was increased for the right ${\alpha}$ dominance of yoga breathing group. On the contrary it was decreased for the left ${\alpha}$ dominance of yoga breathing group as well as the control regardless of the dominance. The result of this study implies that yoga breathing increases stress resistance and is effective in the management of physical stress. Emotionally relaxed people may have greater instantaneous stress reduction after yoga breathing. Moreover, yoga breathing could be also beneficial for depressed who may be more vulnerable to stress.

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CME and radio characteristics of making large solar proton events

  • Hwang, Jung-A;Cho, Kyung-Suk;Bong, Su-Chan;Kim, Su-Jin;Park, Young-Deuk
    • The Bulletin of The Korean Astronomical Society
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    • v.35 no.1
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    • pp.33.2-33.2
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    • 2010
  • We have investigated a relationship among the solar proton events (SPEs), coronal mass ejections (CMEs) and solar flares during the solar cycle 23 (1997-2006). Using 63 SPE dataset, we found that SPE rise time, duration time, and decrease times depend on CME speed and SPE peak intensity depends on the CME earthward direction parameter as well as CME speed and x-ray flare intensity. While inspecting the relation between SPE peak intensity and the CME earthward direction parameter, we found that there are two groups: first group consists of large 6 SPEs (> 10,000 pfu at >10 MeV proton channel of GOES satellite) and shows a very good correlation (cc=0.65) between SPE peak intensity and CME earthward direction parameter. The second group has a relatively weak SPE peak intensity and shows poor correlation between SPE peak intensity and the CME earthward direction parameter (cc=0.01). By investigating characteristics of 6 SPEs in the first group, we found that there are special common conditions of the extremely large proton events (group 1); (1) all the SPEs are associated with very fast halo CME (>1400km/s), (2) they are almost located at disk region, (3) they also accompany large flare (>M7), (4) all they are preceded by another wide CMEs, and (5) they all show helmet streamer nearby the main CME. In this presentation, we will give details of the energy spectra of the 6 SPE events from the ERNE/HED aboard the Solar and Heliospheric Observatory (SOHO), and onset time comparison among the SPE, flare, type II burst, and CME.

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Influence of Oxygen Partial Pressure on ZnO Thin Films for Thin Film Transistors

  • Kim, Jae-Won;Kim, Ji-Hong;Roh, Ji-Hyoung;Lee, Kyung-Joo;Moon, Sung-Joon;Do, Kang-Min;Park, Jae-Ho;Jo, Seul-Ki;Shin, Ju-Hong;Yer, In-Hyung;Koo, Sang-Mo;Moon, Byung-Moo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.106-106
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    • 2011
  • Recently, zinc oxide (ZnO) thin films have attracted great attention as a promising candidate for various electronic applications such as transparent electrodes, thin film transistors, and optoelectronic devices. ZnO thin films have a wide band gap energy of 3.37 eV and transparency in visible region. Moreover, ZnO thin films can be deposited in a poly-crystalline form even at room temperature, extending the choice of substrates including even plastics. Therefore, it is possible to realize thin film transistors by using ZnO thin films as the active channel layer. In this work, we investigated influence of oxygen partial pressure on ZnO thin films and fabricated ZnO-based thin film transistors. ZnO thin films were deposited on glass substrates by using a pulsed laser deposition technique in various oxygen partial pressures from 20 to 100 mTorr at room temperature. X-ray diffraction (XRD), transmission line method (TLM), and UV-Vis spectroscopy were employed to study the structural, electrical, and optical properties of the ZnO thin films. As a result, 80 mTorr was optimal condition for active layer of thin film transistors, since the active layer of thin film transistors needs high resistivity to achieve low off-current and high on-off ratio. The fabricated ZnO-based thin film transistors operated in the enhancement mode with high field effect mobility and low threshold voltage.

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Protein Expression of Mouse Uterus in Post-Implantation

  • Kim, Hong-Rye;Han, Rong-Xun;Kim, Myung-Youn;Diao, Yunfei;Park, Chang-Sik;Jin, Dong-Il
    • Reproductive and Developmental Biology
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    • v.33 no.4
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    • pp.237-242
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    • 2009
  • Pregnancy is a unique event in which a fetus develops in the uterus despite being genetically and immunologically different from the mother, and the underlying mechanisms remain poorly understood. To analyze the differential gene expression profiles in nonpregnant and 7 days post coitus (dpc) pregnant uterus of mice, we performed a global proteomic study by 2-D gel electrophoresis (2-DE) and MALDI-TOF-MS. The uterine proteins were separated using 2-DE, Approximately 1,000 spots were detected on staining with Coomassie brilliant blue. An image analysis using Melanie III (Swiss Institute for Bioinformatics) was performed to detect variations in protein spots between pregnant and nonpregnant uterus. Twenty-one spots were identified as differentially expressed proteins, of which 10 were up-regulated proteins such as alpha-fetoprotein, chloride intracellular channel 1, transgelin, heat-shock protein beta-1, and carbonic anhydrase II, while 11 were down-regulated proteins such as X-box binding protein, glutathione S-transferase omega 1, olfactory receptor Olfr204, and metalloproteinase-disintegrin domain containing protein TECADAM. Most of the identified proteins appeared to be related with catabolism, cell growth, metabolism, regulation, cell protection, protein repair, or protection. Our results uncovered key proteins of mouse uterus involved in pregnancy.

Solution-Processed Inorganic Thin Film Transistors Fabricated from Butylamine-Capped Indium-Doped Zinc Oxide Nanocrystals

  • Pham, Hien Thu;Jeong, Hyun-Dam
    • Bulletin of the Korean Chemical Society
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    • v.35 no.2
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    • pp.494-500
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    • 2014
  • Indium-doped zinc oxide nanocrystals (IZO NCs), capped with stearic acid (SA) of different sizes, were synthesized using a hot injection method in a noncoordinating solvent 1-octadecene (ODE). The ligand exchange process was employed to modify the surface of IZO NCs by replacing the longer-chain ligand of stearic acid with the shorter-chain ligand of butylamine (BA). It should be noted that the ligand-exchange percentage was observed to be 75%. The change of particle size, morphology, and crystal structures were obtained using a field emission scanning electron microscope (FE-SEM) and X-ray diffraction pattern results. In our study, the 5 nm and 10 nm IZO NCs capped with stearic acid (SA-IZO) were ligand-exchanged with butylamine (BA), and were then spin-coated on a thermal oxide ($SiO_2$) gate insulator to fabricate a thin film transistor (TFT) device. The films were then annealed at various temperatures: $350^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$, and $600^{\circ}C$. All samples showed semiconducting behavior and exhibited n-channel TFT. Curing temperature dependent on mobility was observed. Interestingly, mobility decreases with the increasing size of NCs from 5 to 10 nm. Miller-Abrahams hopping formalism was employed to explain the hopping mechanism insight our IZO NC films. By focusing on the effect of size, different curing temperatures, electron coupling, tunneling rate, and inter-NC separation, we found that the decrease in electron mobility for larger NCs was due to smaller electronic coupling.

Structural Analysis of the Streptomyces avermitilis CYP107W1-Oligomycin A Complex and Role of the Tryptophan 178 Residue

  • Han, Songhee;Pham, Tan-Viet;Kim, Joo-Hwan;Lim, Young-Ran;Park, Hyoung-Goo;Cha, Gun-Su;Yun, Chul-Ho;Chun, Young-Jin;Kang, Lin-Woo;Kim, Donghak
    • Molecules and Cells
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    • v.39 no.3
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    • pp.211-216
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    • 2016
  • CYP107W1 from Streptomyces avermitilis is a cytochrome P450 enzyme involved in the biosynthesis of macrolide oligomycin A. A previous study reported that CYP107W1 regioselectively hydroxylated C12 of oligomycin C to produce oligomycin A, and the crystal structure of ligand free CYP107W1 was determined. Here, we analyzed the structural properties of the CYP107W1-oligomycin A complex and characterized the functional role of the Trp178 residue in CYP107W1. The crystal structure of the CYP107W1 complex with oligomycin A was determined at a resolution of $2.6{\AA}$. Oligomycin A is bound in the substrate access channel on the upper side of the prosthetic heme mainly by hydrophobic interactions. In particular, the Trp178 residue in the active site intercalates into the large macrolide ring, thereby guiding the substrate into the correct binding orientation for a productive P450 reaction. A Trp178 to Gly mutation resulted in the distortion of binding titration spectra with oligomycin A, whereas binding spectra with azoles were not affected. The Gly178 mutant's catalytic turnover number for the 12-hydroxylation reaction of oligomycin C was highly reduced. These results indicate that Trp178, located in the open pocket of the active site, may be a critical residue for the productive binding conformation of large macrolide substrates.

Biphasic augmentation of alpha-adrenergic contraction by plumbagin in rat systemic arteries

  • Kim, Hae Jin;Yoo, Hae Young;Zhang, Yin Hua;Kim, Woo Kyung;Kim, Sung Joon
    • The Korean Journal of Physiology and Pharmacology
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    • v.21 no.6
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    • pp.687-694
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    • 2017
  • Plumbagin, a hydroxy 1,4-naphthoquinone compound from plant metabolites, exhibits anticancer, antibacterial, and antifungal activities via modulating various signaling molecules. However, its effects on vascular functions are rarely studied except in pulmonary and coronary arteries where NADPH oxidase (NOX) inhibition was suggested as a mechanism. Here we investigate the effects of plumbagin on the contractility of skeletal artery (deep femoral artery, DFA), mesenteric artery (MA) and renal artery (RA) in rats. Although plumbagin alone had no effect on the isometric tone of DFA, $1{\mu}M$ phenylephrine (PhE)-induced partial contraction was largely augmented by plumbagin (${\Delta}T_{Plum}$, 125% of 80 mM KCl-induced contraction at $1{\mu}M$). With relatively higher concentrations (>$5{\mu}M$), plumbagin induced a transient contraction followed by tonic relaxation of DFA. Similar biphasic augmentation of the PhE-induced contraction was observed in MA and RA. VAS2870 and GKT137831, specific NOX4 inhibitors, neither mimicked nor inhibited ${\Delta}T_{Plum}$ in DFA. Also, pretreatment with tiron or catalase did not affect ${\Delta}T_{Plum}$ of DFA. Under the inhibition of PhE-contraction with L-type $Ca^{2+}$ channel blocker (nifedipine, $1{\mu}M$), plumbagin still induced tonic contraction, suggesting $Ca^{2+}$-sensitization mechanism of smooth muscle. Although ${\Delta}T_{Plum}$ was consistently observed under pretreatment with Rho A-kinase inhibitor (Y27632, $1{\mu}M$), a PKC inhibitor (GF 109203X, $10{\mu}M$) largely suppressed ${\Delta}T_{Plum}$. Taken together, it is suggested that plumbagin facilitates the PKC activation in the presence of vasoactive agonists in skeletal arteries. The biphasic contractile effects on the systemic arteries should be considered in the pharmacological studies of plumbagin and 1,4-naphthoquinones.

Fabrication and Characterization of MFIS-FET using Au/SBT/LZO/Si structure

  • Im, Jong-Hyun;Lee, Gwang-Geun;Kang, Hang-Sik;Jeon, Ho-Seung;Park, Byung-Eun;Kim, Chul-Ju
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.174-174
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    • 2008
  • Non-volatile memories using ferroelectric-gate field-effect transistors (Fe-FETs) with a metal/ferroelectric/semiconductor gate stack (MFS-FETs) make non-destructive read operation possible. In addition, they also have features such as high switching speed, non-volatility, radiation tolerance, and high density. However, the interface reaction between ferroelectric materials and Si substrates, i.e. generation of mobile ions and short retention, make it difficult to obtain a good ferroelectric/Si interface in an MFS-FET's gate. To overcome these difficulties, Fe-FETs with a metal/ferroelectric/insulator/semiconductor gate stack (MFIS-FETs) have been proposed, where insulator as a buffer layer is inserted between ferroelectric materials and Si substrates. We prepared $SrBi_2Ta_2O_9$ (SBT) film as a ferroelectric layer and $LaZrO_x$ (LZO) film as a buffer layer on p-type (100) silicon wafer for making the MFIS-FET devices. For definition of source and drain region, phosphosilicate glass (PSG) thin film was used as a doping source of phosphorus (P). Ultimately, the n-channel ferroelectric-gate FET using the SBT/LZO/Si Structure is fabricated. To examine the ferroelectric effect of the fabricated Fe-FETs, drain current ($I_d$) versus gate voltage ($V_g$) characteristics in logarithmic scale was measured. Also, drain current ($I_d$) versus drain voltage ($V_d$) characteristics of the fabricated SBT/LZO/Si MFIS-FETs was measured according to the gate voltage variation.

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