• 제목/요약/키워드: wet chemical method

검색결과 319건 처리시간 0.024초

실란 커플링제 처리방법이 고무 물성에 미치는 영향 (Influence of Silane Coupling Agent Treatments on Physical Properties of Rubbery Materials)

  • 문진복
    • Elastomers and Composites
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    • 제36권4호
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    • pp.237-245
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    • 2001
  • 고무의 충전제로 사용되는 실리카의 보강효과를 높이기 위해 실란 커플링제인 bistriethox ysilyipropyltetrasulfide(Si 69)와 ${\gamma}$-mercaptopropyltrimethoxy silane(MPS)를 사용하여 실리카의 화학처리를 건식법과 습식법으로 행하였으며, 실란 커플링제를 직접 실리카와 혼합하는 건식법보다 혼합하기 전에 화학적으로 처리하는 건식법이 분산성, 젖음성, 동적특성 및 안정성에서 더욱 우수하였다. 화학처리된 실리카를 SBR 배합에 니더와 믹싱롤을 사용하여 균일하게 혼련하였고 측정한 물성으로부터 비교, 검토하였으며, 실란 커플링제를 사용하지 않을 때보다 물성이 현저히 증가하였으며, 실험으로부터 건식법의 경우 Si 69와 MPS의 최적 사용량은 2 w/w%이지만. 습식법의 경우 EA 및 TGA 분석으로부터 4 w/w% 이였다.

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Zn$_2$SiO$_4$:Mn 녹색형광체의 입도제어 및 발광특성 (Control of Particle Size and Luminescence Property in Zn$_2$SiO$_4$:Mn Green Phosphor)

  • 성부용;정하균;박희동
    • 한국재료학회지
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    • 제11권8호
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    • pp.636-640
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    • 2001
  • PDP용 녹색 형광체의 발광특성을 개선시키기 위해 고안된 액상의 화학적 합성법을 사용하여 조성식이 $Zn_{2-x}$ $SiO_4$:xMn(x=0.05, 0.08)인 형광체를 입자크기가 0.5~2$\mu\textrm{m}$로 조절하여 제조하였다. 제조된 형광체 입자는 구상이며 잘 분산된 형상을 봉주었고, 고상반응법에 비해 상대적으로 낮은 $1080^{\circ}C$에서 willemite구조의 단일상을 얻을 수 있었다. 또한 진공 자외선 영역의 147 nm의 여기원을 사용하여 광발광 특성을 조사하였다. 입자의 크기가 1$\mu\textrm{m}$이고 Mn의 도핑양이 8mole%일 때, 상용 형광체와 비교하여 발광세기는 약 40% 향상되었고 색좌표는 x=0.24, y=0.69로 거의 일치하는 결과를 얻을 수 있었다. 측정된 형광체의 잔광시간은 7.8ms이었다.

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투명 전도성 산화물 전극으로의 응용을 위한 산화아연(ZnO) 코팅막의 습식 식각 특성연구 (Study on Wet chemical Etching Characterization of Zinc Oxide Film for Transparency Conductive Oxide Application)

  • 유동근;김명화;정성훈;부진효
    • 한국진공학회지
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    • 제17권1호
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    • pp.73-79
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    • 2008
  • 투명 전도성 산화물 전극(transparent conductive oxide electrodes)에 적용하기 위하여 RF 마그네트론 스퍼터링 방법에 의해 유리 기판 위에 산화아연 박막을 증착하였다. 투명 전극으로써 응용되기 위한 최적의 조건으로 기판온도를 상온으로 유지하고 RF power 200 W, 타겟과 기판사이의 거리(Dts)가 30 mm일 때 증착된 산화아연 박막으로부터 가장 낮은 비 저항값($7.4{\times}10^{-3}{\Omega}cm$)을 얻어 낼 수 있었으며, 85% 이상의 높은 투과율을 만족하는 박막을 얻을 수 있었다. 실질적인 소자로써의 응용을 위해 photo lithography를 통한 pattern을 형성, 습식 식각을 통하여 그 특성을 알아보고자 하였다. 습식 식각에서 사용된 식각용액(etchant)으로는 다양한 산 용액(황산, 옥살산, 인산)을 사용하였으며, 산의 농도 변화에 따른 식각특성과 식각시간 및 식각 이미지(표면형상)의 변화를 알아보았다. 결과적으로 산화아연의 습식식각은 산의 종류와 무관하게 산 용액의 농도(즉, pH)에 크게 의존하며, pH가 증가함에 따라 식각율이 지수함수적으로 감소하고 아울러 다양한 식각 이미지가 나타남을 최초로 고찰할 수 있었다.

Synthesis and luminescence properties of lanthanum oxides/hydroxides nanorod bundles

  • Hussain, Sk. Khaja;Raju, G. Seeta Rama;Yu, Jae Su
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.171.2-171.2
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    • 2015
  • Nowadays, trivalent rare-earth ($RE^{3+}$) ions activated metal oxides have been proved to be excellent host materials due to their various applications. Facile wet-chemical technique have been considered as the best synthetic route due its intensive interest in the preparation of nanostructures. Europium ion doped lanthanum hydroxide ($La(OH)_3:Eu^{3+}$) phosphors were synthesized by the facile wet chemical method using the hexamethylenetetramine (HMTA) as a mediated surfactant. The thermal behavior for the $La(OH)_3:Eu^{3+}$ phosphors was investigated by thermogravimetric and differential thermal analysis method. The morphological studies were measured by scanning electron microscope and transmission electron microscope measurements, indicating three-dimensional (3D) flower-like $La(OH)_3:Eu^{3+}$ nanorod bundles. After subsequent annealing process, the lanthanum oxide ($La_2O_3:Eu^{3+}$) phosphor exhibited similar kind of morphology. The synthesized $La(OH)_3:Eu^{3+}$ and $La_2O_3:Eu^{3+}$ samples were characterized by X-ray powder diffraction and Fourier transform infrared spectroscopy. Furthermore, photoluminescence and cathodoluminescence properties were studied in details.

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Use of Wet Chemical Method to Prepare β Tri-Calcium Phosphates having Macro- and Nano-crystallites for Artificial Bone

  • Chang, Myung Chul
    • 한국세라믹학회지
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    • 제53권6호
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    • pp.670-675
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    • 2016
  • Calcium phosphate crystallites were prepared by wet chemical method for use in artificial bone. In order to obtain ${\beta}$-tricalcium phosphate (TCP), nano-crystalline calcium phosphate (CaP) was precipitated at $37^{\circ}C$ and at $pH5.0{\pm}0.1$ under stirring using highly active $Ca(OH)_2$ in DI water and an aqueous solution of $H_3PO_4$. The precipitated nano-crystalline CaP solution was kept at $90^{\circ}C$ for the growth of CaP crystallites. Through the growing process of CaP crystallites, we were able to obtain various sizes of rectangular CaP crystallites according to the crystal growing times. Dry nano-crystalline CaP powders at $37^{\circ}C$ were mixed with dry macro-crystalline CaP crystallites and the shaped mixture sample was fired at $1150^{\circ}C$ to make a ${\beta}-TCP$ block. Several tens of nm powders were uniformly coated on the surface, which was comprised of powders of several tens of ${\mu}m$, using a vibrator. The mixing ratio between the nanometer powders and the micrometer powders greatly affected the mechanical strength of the mixture block; the most appropriate ratio of these two materials was 50 wt% to 50 wt%. The sintered block showed improved mechanical strength, which was caused by the solid state interaction between the nano-crystalline ${\beta}-TCP$ and the macro-crystalline ${\beta}-TCP$.

초순수의 오염과 반도체 제조에 미치는 영향에 대한 연구 (A Study on the Contamination of D.I. Water and its Effect on Semiconductor Device Manufacturing)

  • 김흥식;유형원;윤철;김태각;최민성
    • 전자공학회논문지A
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    • 제30A권11호
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    • pp.99-104
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    • 1993
  • We analyzed the D.I. water used in wet cleaning process of semiconductor device manufacturing both at the D.I. water plant and at the wafer cleaning bath to detect the impurity source of D.I. water contamination. This shows that the quantity of impurity is related to the resistivity of D.I. water, and we found that the cleanliness of the wafer surface processed in D.I. water bath was affected by the degree of the ionic impurity contamination. So we evaluated the cleaning effect as different method for Fe ion, having the best adsoptivity on wafer surface. Moreover the temperature effect of the D.I. water is investigated in case of anion in order to remove the chemical residue after wet process. In addition to the control of D.I. water resistivity, chemical analysis of impurity control in D.I. water should be included and a suitable cleaning an drinsing method needs to be investigated for a high yielding semiconductor device.

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반도체 기판 교차 파지 방법 (Chucking Method of Substrate Using Alternating Chuck Mechanism)

  • 안영기;최중봉;구교욱;조중근;김태성
    • 반도체디스플레이기술학회지
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    • 제8권1호
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    • pp.1-5
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    • 2009
  • Typically, single-wafer wet etching is done by dispensing chemical onto the front and back side of spin wafer. The wafer is fixed by a number of chuck pins, which obstruct the chemical flow and would result in the incomplete removal of the remaining film, which can become a source of contamination in the next process. In this paper, we introduce a novel design of wafer chuck, in which chuck pins are groupped into two and each group of pins fixes the substrate alternatively. Two groups of chuck pins fix the high-speed spin substrate with non contact method using a magnetic material. The actual process has been executed to observe the effectiveness of this new wafer chuck. It was found that the new wafer chuck performed better than the conventional wafer chuck for removing the remaining film from the bevel and edge side of substrate.

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산화아연 나노핵의 조작을 통한 산화아연 나노로드의 제어 (Artificial Control of ZnO Nanorods via Manipulation of ZnO Nanoparticle Seeds)

  • 신경식;이삼동;김상우
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.399-399
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    • 2008
  • Synthesis and characterization of ZnO structure such as nanowires, nanorods, nanotube, nanowall, etc. have been studied to multifunctional application such as optical, nanoscale electronic and chemical devices because it has a room-temperature wide band gap of 3.37eV, large exiton binding energy(60meV) and various properties. Various synthesis methods including chemical vapor deposition (CVD), physical vapor deposition, electrochemical deposition, micro-emulsion, and hydrothermal approach have been reported to fabricate various kinds of ZnO nanostructures. But some of these synthesis methods are expensive and difficult of mass production. Wet chemical method has several advantage such as simple process, mass production, low temperature process, and low cost. In the present work, ZnO nanorods are deposited on ITO/glass substrate by simple wet chemical method. The process is perfomed by two steps. One-step is deposition of ZnO seeds and two-step is growth of ZnO nanorods on substrates. In order to form ZnO seeds on substrates, mixture solution of Zn acetate and Methanol was prepared.(one-step) Seed layers were deposited for control of morpholgy of ZnO seed layers by spin coating process because ZnO seeds is deposited uniformly by centrifugal force of spin coating. The seed-deposited samples were pre-annealed for 30min at $180^{\circ}C$ to enhance adhesion and crystallinnity of ZnO seed layer on substrate. Vertically well-aligned ZnO nanorods were grown by the "dipping-and-holding" process of the substrates into the mixture solution consisting of the mixture solution of DI water, Zinc nitrate and hexamethylenetetramine for 4 hours at $90^{\circ}C$.(two-step) It was found that density and morphology of ZnO nanorods were controlled by manipulation of ZnO seeds through rpm of spin coating. The morphology, crystallinity, optical properties of the grown ZnO nanostructures were carried out by field-emission scanning electron microscopy, high-resolution electron microscopy, photoluminescence, respectively. We are convinced that this method is complementing problems of main techniques of existing reports.

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PTFE 막의 표면 개질 방법 (Surface Modification of Poly(tetrafluoroethylene) (PTFE) Membranes)

  • 장준규;윤채원;박호범
    • 멤브레인
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    • 제33권1호
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    • pp.1-12
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    • 2023
  • 본 총설은 소수성 불소수지계 분리막의 표면 개질에 대한 개론으로 다양한 표면 개질 방법 및 그 연구 결과를 중점적으로 서술하였다. PTFE로 대표되는 불소수지계 고분자 분리막은 막 증류, 유수 분리, 기체 분리를 포함한 다양한 막 분리 공정에서 사용되어왔다. PTFE 막은 내화학성, 내열성, 높은 기계적 강도와 같은 뛰어난 물성에도 불구하고 소수성 표면 특성으로 인해 기술 적용의 확장에 제한적이다. 친수성 향상을 위해 습식 화학법, 친수성 고분자 코팅, 플라즈마 처리, 조사, 원자층 증착과 같은 다양한 PTFE 표면 개질 방법을 이용하며 이를 통해 불소수지계 분리막의 응용분야가 확장될 수 있다.