• Title/Summary/Keyword: wet chemical method

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Influence of Silane Coupling Agent Treatments on Physical Properties of Rubbery Materials (실란 커플링제 처리방법이 고무 물성에 미치는 영향)

  • Woon, Jin-Bok
    • Elastomers and Composites
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    • v.36 no.4
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    • pp.237-245
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    • 2001
  • A study was made on the chemical treatment of silica and silane coupling agents, bistriethox ysilylpropyltetrasulfide(Si 69) and ${\gamma}$-mercaptopropyltrimethoxy silane (MPS) for reinforcement of silica formulation. The effects of chemical treatment method and the most popular two coupling agents were examined. The results clearly indicate that the wet method, coupling agent is combined chemically with the silica prior to mixing, has more dispersion, wetting ability, dynamic properties and stability than the dry method, coupling agent is premixed directly with the silica. The mixing was done using a bench-type kneader having two mixing cam and a two-roll mill, under approximately similar conditions. The physical properties of SBR vulcanizates give rise to marked improvements by addition of Si 69 and MPS in comparison with without silane coupling agents. The optimum amount of Si 69 and MPS was 2 w/w% by experiments in the dry method but was 4 w/w% by EA and TGA analysis in the wet method.

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Control of Particle Size and Luminescence Property in Zn$_2$SiO$_4$:Mn Green Phosphor (Zn$_2$SiO$_4$:Mn 녹색형광체의 입도제어 및 발광특성)

  • Seong, Bu-Yong;Jeong, Ha-Gyun;Park, Hui-Dong
    • Korean Journal of Materials Research
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    • v.11 no.8
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    • pp.636-640
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    • 2001
  • In order to improve the optical Performance of green emitting phosphor for plasma display panel (PDP) application, the wet chemical method for preparing $Zn_{2-x}$ $SiO_4$:xMn (xi=0.02. 0.08) phosphor was designed. The spherical phosphor particles were obtained and the size can be between 0.5$\mu\textrm{m}$ and 2$\mu\textrm{m}$. The formation of phosphor, which had the willemite structure, was completed at relatively low temperature of 108$0^{\circ}C$. Also, photoluminescence Properties of the phosphors prepared were investigated under vacuum ultraviolet excitation. In particular, the emission intensity of Zn$_2$SiO$_4$:0.08Mn phosphor having the 1$\mu\textrm{m}$ of particle size was higher than that of commercial phosphor by 40%. The decay time of zinc silicate powder prepared as containing 8 mole% of manganese has been measured as 7.8ms.

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Study on Wet chemical Etching Characterization of Zinc Oxide Film for Transparency Conductive Oxide Application (투명 전도성 산화물 전극으로의 응용을 위한 산화아연(ZnO) 코팅막의 습식 식각 특성연구)

  • Yoo, Dong-Geun;Kim, Myoung-Hwa;Jeong, Seong-Hun;Boo, Jin-Hyo
    • Journal of the Korean Vacuum Society
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    • v.17 no.1
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    • pp.73-79
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    • 2008
  • In order to apply for transparent conductive oxide(TCO), we deposited ZnO thin films on the glass at room temperature by RF magnetron sputtering method. Deposition conditions for high transmittance and low resistivity were optimized in our previous studies. Under the deposition condition with the RF power of 200 W, target to substrate distance of 30 mm and working pressure of 5 mTorr, highly conductive($7.4{\times}10^{-3}{\Omega}cm$) and transparent(over 85%) ZnO films were prepared. Highly oriented ZnO film in the [002] direction were obtained with specifically designed ZnO targets. Systematic study on dependence of deposition parameters on electrical and optical properties of the as-grown ZnO films were mainly investigated in this work. And for application tests using these films as transparent conductive oxide anodes, wet chemical etching behaviors of ZnO films were also investigated using various chemicals. Wet-chemical etching behavior of ZnO films were investigated using various acid solutions. The concentrations of these different acid solutions were controlled to study the etching shapes and etching rate. ZnO films were anisotropically etched at various concentrations and wet etching led to crater-like surface structure. Also we firstly found that the etching rate and etching shapes of ZnO films strongly depended on the etchant concentrations (i.e. pH) and the etching rate is exponentially decreased with increasing pH values regardless of the acid etchants.

Synthesis and luminescence properties of lanthanum oxides/hydroxides nanorod bundles

  • Hussain, Sk. Khaja;Raju, G. Seeta Rama;Yu, Jae Su
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.171.2-171.2
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    • 2015
  • Nowadays, trivalent rare-earth ($RE^{3+}$) ions activated metal oxides have been proved to be excellent host materials due to their various applications. Facile wet-chemical technique have been considered as the best synthetic route due its intensive interest in the preparation of nanostructures. Europium ion doped lanthanum hydroxide ($La(OH)_3:Eu^{3+}$) phosphors were synthesized by the facile wet chemical method using the hexamethylenetetramine (HMTA) as a mediated surfactant. The thermal behavior for the $La(OH)_3:Eu^{3+}$ phosphors was investigated by thermogravimetric and differential thermal analysis method. The morphological studies were measured by scanning electron microscope and transmission electron microscope measurements, indicating three-dimensional (3D) flower-like $La(OH)_3:Eu^{3+}$ nanorod bundles. After subsequent annealing process, the lanthanum oxide ($La_2O_3:Eu^{3+}$) phosphor exhibited similar kind of morphology. The synthesized $La(OH)_3:Eu^{3+}$ and $La_2O_3:Eu^{3+}$ samples were characterized by X-ray powder diffraction and Fourier transform infrared spectroscopy. Furthermore, photoluminescence and cathodoluminescence properties were studied in details.

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Use of Wet Chemical Method to Prepare β Tri-Calcium Phosphates having Macro- and Nano-crystallites for Artificial Bone

  • Chang, Myung Chul
    • Journal of the Korean Ceramic Society
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    • v.53 no.6
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    • pp.670-675
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    • 2016
  • Calcium phosphate crystallites were prepared by wet chemical method for use in artificial bone. In order to obtain ${\beta}$-tricalcium phosphate (TCP), nano-crystalline calcium phosphate (CaP) was precipitated at $37^{\circ}C$ and at $pH5.0{\pm}0.1$ under stirring using highly active $Ca(OH)_2$ in DI water and an aqueous solution of $H_3PO_4$. The precipitated nano-crystalline CaP solution was kept at $90^{\circ}C$ for the growth of CaP crystallites. Through the growing process of CaP crystallites, we were able to obtain various sizes of rectangular CaP crystallites according to the crystal growing times. Dry nano-crystalline CaP powders at $37^{\circ}C$ were mixed with dry macro-crystalline CaP crystallites and the shaped mixture sample was fired at $1150^{\circ}C$ to make a ${\beta}-TCP$ block. Several tens of nm powders were uniformly coated on the surface, which was comprised of powders of several tens of ${\mu}m$, using a vibrator. The mixing ratio between the nanometer powders and the micrometer powders greatly affected the mechanical strength of the mixture block; the most appropriate ratio of these two materials was 50 wt% to 50 wt%. The sintered block showed improved mechanical strength, which was caused by the solid state interaction between the nano-crystalline ${\beta}-TCP$ and the macro-crystalline ${\beta}-TCP$.

A Study on the Contamination of D.I. Water and its Effect on Semiconductor Device Manufacturing (초순수의 오염과 반도체 제조에 미치는 영향에 대한 연구)

  • Kim, Heung-Sik;Yoo, Hyung-Won;Youn Chul;Kim, Tae-Gak;Choi, Min-Sung
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.30A no.11
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    • pp.99-104
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    • 1993
  • We analyzed the D.I. water used in wet cleaning process of semiconductor device manufacturing both at the D.I. water plant and at the wafer cleaning bath to detect the impurity source of D.I. water contamination. This shows that the quantity of impurity is related to the resistivity of D.I. water, and we found that the cleanliness of the wafer surface processed in D.I. water bath was affected by the degree of the ionic impurity contamination. So we evaluated the cleaning effect as different method for Fe ion, having the best adsoptivity on wafer surface. Moreover the temperature effect of the D.I. water is investigated in case of anion in order to remove the chemical residue after wet process. In addition to the control of D.I. water resistivity, chemical analysis of impurity control in D.I. water should be included and a suitable cleaning an drinsing method needs to be investigated for a high yielding semiconductor device.

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Chucking Method of Substrate Using Alternating Chuck Mechanism (반도체 기판 교차 파지 방법)

  • Ahn, Young-Ki;Choi, Jung-Bong;Koo, Kyo-Woog;Cho, Jung-Keun;Kim, Tae-Sung
    • Journal of the Semiconductor & Display Technology
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    • v.8 no.1
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    • pp.1-5
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    • 2009
  • Typically, single-wafer wet etching is done by dispensing chemical onto the front and back side of spin wafer. The wafer is fixed by a number of chuck pins, which obstruct the chemical flow and would result in the incomplete removal of the remaining film, which can become a source of contamination in the next process. In this paper, we introduce a novel design of wafer chuck, in which chuck pins are groupped into two and each group of pins fixes the substrate alternatively. Two groups of chuck pins fix the high-speed spin substrate with non contact method using a magnetic material. The actual process has been executed to observe the effectiveness of this new wafer chuck. It was found that the new wafer chuck performed better than the conventional wafer chuck for removing the remaining film from the bevel and edge side of substrate.

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Artificial Control of ZnO Nanorods via Manipulation of ZnO Nanoparticle Seeds (산화아연 나노핵의 조작을 통한 산화아연 나노로드의 제어)

  • Shin, Kyung-Sik;Lee, Sam-Dong;Kim, Sang-Woo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.399-399
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    • 2008
  • Synthesis and characterization of ZnO structure such as nanowires, nanorods, nanotube, nanowall, etc. have been studied to multifunctional application such as optical, nanoscale electronic and chemical devices because it has a room-temperature wide band gap of 3.37eV, large exiton binding energy(60meV) and various properties. Various synthesis methods including chemical vapor deposition (CVD), physical vapor deposition, electrochemical deposition, micro-emulsion, and hydrothermal approach have been reported to fabricate various kinds of ZnO nanostructures. But some of these synthesis methods are expensive and difficult of mass production. Wet chemical method has several advantage such as simple process, mass production, low temperature process, and low cost. In the present work, ZnO nanorods are deposited on ITO/glass substrate by simple wet chemical method. The process is perfomed by two steps. One-step is deposition of ZnO seeds and two-step is growth of ZnO nanorods on substrates. In order to form ZnO seeds on substrates, mixture solution of Zn acetate and Methanol was prepared.(one-step) Seed layers were deposited for control of morpholgy of ZnO seed layers by spin coating process because ZnO seeds is deposited uniformly by centrifugal force of spin coating. The seed-deposited samples were pre-annealed for 30min at $180^{\circ}C$ to enhance adhesion and crystallinnity of ZnO seed layer on substrate. Vertically well-aligned ZnO nanorods were grown by the "dipping-and-holding" process of the substrates into the mixture solution consisting of the mixture solution of DI water, Zinc nitrate and hexamethylenetetramine for 4 hours at $90^{\circ}C$.(two-step) It was found that density and morphology of ZnO nanorods were controlled by manipulation of ZnO seeds through rpm of spin coating. The morphology, crystallinity, optical properties of the grown ZnO nanostructures were carried out by field-emission scanning electron microscopy, high-resolution electron microscopy, photoluminescence, respectively. We are convinced that this method is complementing problems of main techniques of existing reports.

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Surface Modification of Poly(tetrafluoroethylene) (PTFE) Membranes (PTFE 막의 표면 개질 방법)

  • Jun Kyu Jang;Chaewon Youn;Ho Bum Park
    • Membrane Journal
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    • v.33 no.1
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    • pp.1-12
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    • 2023
  • In this review, surface modification methods of hydrophobic poly(tetrafluoroethylene) (PTFE) membrane are introduced and their improved hydrophilicity results are discussed. Fluoropolymer based membranes, represented by PTFE membranes have been used in various membrane separation processes, including membrane distillation, oil separation and gas separation. However, despite excellent physical properties such as chemical resistance, heat resistance and high mechanical strength, the strong hydrophobicity of PTFE membrane surface has become a challenging factor in expanding its membrane separation application. To improve the separation performance of PTFE membranes, wet chemical, hydrophilic coating, plasma, irradiation and atomic layer deposition are applied, modifying the surface property of PTFE membranes while maintaining their inherent properties.