• 한국안전학회지
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• 제24권1호
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• pp.14-20
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• 2009

Direct numerical simulations(DNS) were performed for the prediction of transient buoyant jet diffusion flames where the Froude numbers(Fr) are 5 and 160, respectively. The thermodynamic and transport properties were evaluated using CHEMKIN package to enhance the prediction performance of the DNS code. The simulated buoyant jet diffusion flame of Fr=5 and 160 showed the transient, dynamic motion well. It was identified that the buoyant jet flames were flickered periodically, and the simulated flickering frequency of the jet diffusion flame of Fr=5 was 12.5Hz, which was in good agreement with the experimental results. The flamelet structures of the buoyant jet diffusion flames could be well understood by comparing the scalar dissipation rates(SDR) and the heat release rates(HRR) of the flames. It was found that the SDR was strongly coupled with the HRR in the buoyant jet diffusion flames.

• 방사성폐기물학회지
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• 제16권2호
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• pp.203-209
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• 2018

중성자 수송방정식으로 기술되는 중성자 거동을 중성자 확산방정식으로 계산하기 위해서는 수송경계조건에 대한 정확한 확산근사가 필요하다. 본 연구에서는 수송이론의 반사 및 진공경계조건에 대한 근사로 확산계산에서 광범위하게 사용되는 영중성자류, Marshak 및 Mark, 영중성자속, Albedo 조건 등에 대하여 수송이론의 확산근사 관점에서 유도 분석하여 각 조건의 수학적, 물리적 의미를 이해하고 서로의 상관관계를 보였다. 이러한 경계조건을 갖는 대상 문제를 서로 다른 확산경계조건을 사용하여 풀어 결과를 비교하였고 이들이 수송 경계조건을 비교적 정확히 기술함을 보였다.

• 한국지하수토양환경학회:학술대회논문집
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• 한국지하수토양환경학회 1999년도 정기총회 및 춘계 공동 학술발표회
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• pp.6-7
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• 1999

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.142.1-142.1
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• 2016

We present bulk diffusion rates of hydroxide ions in amorphous solid water (ASW) at 135 ~ 160 K. Previous researches showed that the diffusion mechanism of hydroxide is different from one of hydronium ions, and this implies that they have different diffusion rates. In ultra-high vacuum (UHV) chamber, low-energy scattering (LES) was used to measure ion population and temperature-programmed desorption (TPD) was conducted for measuring ASW thicknesses. To determine the diffusion rates, a simple model for $H_2O/NaOH/H_2O$ sandwich films was developed using Fick's second law. The measured surface population of hydroxide ions as a function of time was well fitted to the model, and the rates were well agreed to an Arrhenius equation.

• 대한전기학회논문지
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• 제43권7호
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• pp.1127-1134
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• 1994

The analytical model for the induced Hall field in the magnetotransistor considering the diffusion of carriers has been proposed and verified by experiment and simulation. Previous models for the induced Hall field in the magnetotransistor do not consider the influence of the diffusion carrier transport. However, the carrier diffusion in the base region of magnetotransistors cannot be neglected and should be considered to evaluated the Hall field in the magnetotransistors accurately. We have measured the Hall voltage in the base region of the fabricated magnetotransistors. The measured values have been compared with the numerical results evaluated from our diffusion model as well as the calculated results from the conventional model. The evaluated Hall voltage from the diffusion model agrees well with the measured values while the sign of the Hall voltage calculated by the conventional model is opposite to that of the measured values in the saturation region. This discrepancy is due to the fact that the diffusion model considers the carrier diffusion while the conventional one does not. The Hall field model including the influence of carrier diffusion may be an important tool to optimize the device structure and to understand the operating principle of the magnetotransistor.

• 전자공학회논문지A
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• 제33A권2호
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• pp.131-139
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• 1996

Inthis apper wa analyzed the channel-hot-electron programming characteristics of the single-poly EEPROM with different control gate and drain structures. The single-poly EEPROM uses the p$^{+}$/n$^{+}$-diffusion in the n-well as a control gate instead of the second poly-silicon. The program and erase characteristics of the single-poly EEPROM were verified using the two-dimensional device simulator, MEDICI. The single-poly EEPROM was fabricated using 0.8$\mu$m ASIC CMOS process, and its CHE programming characteristics were measured using HP4155 parameteric analyzer and HP8110 pulse gnerator. Especially we investigated the CHE programming characteristics of the single-poly EEPROM with the p$^{+}$-diffusion or n$^{+}$-diffusion in the n-well as a control gate and the LDD or single-drain structure. The single-poly EEPROM with p$^{+}$-diffusion in the n-well as a control gate and single-drain structure was programmed to about VT$\thickapprox$5V with VDS=6V, VCG=12V(1ms pulse width).th).

• 미생물학회지
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• 제28권3호
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• pp.278-282
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• 1990

Diffusion and partition of progesterone into the polyacrylamide gel was examined. Diffusion coefficient of progesterone decreased down to an asymptotic value as the concentration of the organic solvents in the diffusing medium increased. However the partition coefficient diminished steadily. Crosslinking density in the gel didn't affected the diffusion coefficient considerably but lowered the partition coefficient due to the contraction of pore volume of the gel. Progesterone showed higher diffusion coefficient as well as partition coefficient in the polyurethane than in the polyacrylamide gel, which seems to be ascribed to the difference in hydrophobicity, pore volume and pore size of the polymer matrix.

• 대한전자공학회논문지
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• 제25권8호
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• pp.959-965
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• 1988

Zinc diffusion characteristics and its applicabilities have been studied using an open-tube system. Thermal decomposition of arsenide(As) at gallium arsenide(GaAs) wafer surface was well inhibited by using Ga: poly-GaAs: Zn compositon as a diffusion source. Junction depth was obtained as 4.6x10**7\ulcorner exp)-1.25/kT) where activation energy of diffusion was 1.25eV. From Boltzmann-matano analysis, it could be identified that concentration dependencies of Zn diffusivity well consisted with those of kick-out model. The ideality factor of p+-n junction formed by Zn diffusion was about 1.6 and infrared light intensity was linearly varied in the range of sixty folds. It is concluded frodm these results that Zn diffuses according to kick-out model, and open-tube method is applicable to compound semiconductor devices.

• Journal of applied mathematics & informatics
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• 제31권1_2호
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• pp.241-246
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• 2013

Choi [1] identified and characterized the limiting diffusion of this diploid model by defining discrete generator for the rescaled Markov chain. In this note, we define the operator of projection $S_t$ on limiting diffusion and new measure $dQ=S_tdP$. We show the martingale property on this operator and measure. Also we conclude that the martingale problem for diffusion operator of projection is well-posed.

• 한국산학기술학회논문지
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• 제19권9호
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• pp.108-115
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• 2018

단세대 기술의 확산 거동에 대한 이해는 시간의 변화가 주요한 확산 인자로 고려되었으나, 다세대 기술의 확산거동은 시간의 변화 외에 다양한 인자들을 고려할 필요가 있다. 본 연구에서는 다세대 기술의 확산경로를 분석하기 위해 가격 및 기술적 성능의 추가적인 인자들을 발굴하여 '시간, 가격, 성능' 차원의 확산경로를 정의하였고, 정의된 다차원 확산경로를 바탕으로 다세대 기술인 반도체 산업에 대해 확산경로를 추적하였다. 반도체 산업에 대한 사례 연구 결과 기술 확산경로는 '가격과 기술적 성능으로 구성되는 면적이 최대한 커지는 방향'으로 확산되는 거동을 보였다. 본 연구는 다세대 기술의 확산 거동을 다차원에 기반하여 분석하였고, 성숙 및 초기 단계의 다세대 기술들의 확산 거동에 대해 예측 가능하다는 이론적 의의를 지니고 있다. 또한 다세대 기술 산업의 연구개발 및 마케팅 담당자들에게도 시장 진입 및 퇴출 시기, 고객의 경제적 및 기술적 요구조건 파악을 위해 실무적으로도 의의가 있다.