• Title/Summary/Keyword: water-vapor transmission rate

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Low Temperature PECVD for SiOx Thin Film Encapsulation

  • Ahn, Hyung June;Yong, Sang Heon;Kim, Sun Jung;Lee, Changmin;Chae, Heeyeop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.198.1-198.1
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    • 2016
  • Organic light-emitting diode (OLED) displays have promising potential to replace liquid crystal displays (LCDs) due to their advantages of low power consumption, fast response time, broad viewing angle and flexibility. Organic light emitting materials are vulnerable to moisture and oxygen, so inorganic thin films are required for barrier substrates and encapsulations.[1-2]. In this work, the silicon-based inorganic thin films are deposited on plastic substrates by plasma-enhanced chemical vapor deposition (PECVD) at low temperature. It is necessary to deposit thin film at low temperature. Because the heat gives damage to flexible plastic substrates. As one of the transparent diffusion barrier materials, silicon oxides have been investigated. $SiO_x$ have less toxic, so it is one of the more widely examined materials as a diffusion barrier in addition to the dielectric materials in solid-state electronics [3-4]. The $SiO_x$ thin films are deposited by a PECVD process in low temperature below $100^{\circ}C$. Water vapor transmission rate (WVTR) was determined by a calcium resistance test, and the rate less than $10.^{-2}g/m^2{\cdot}day$ was achieved. And then, flexibility of the film was also evaluated.

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Ion Flux Assisted PECVD of SiON Films Using Plasma Parameters and Their Characterization of High Rate Deposition and Barrier Properties

  • Lee, Joon-S.;Jin, Su-B.;Choi, Yoon-S.;Choi, In-S.;Han, Jeon-G.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.236-236
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    • 2011
  • Silicon oxynitride (SiON) was deposited for gas barrier film on polyethylene terephthalate (PET) using octamethylycyclodisiloxane (Si4O4C8H24, OMCTS) precursor by plasma enhanced chemical vapor deposition (PECVD) at low temperature. The ion flux and substrate temperature were measured by oscilloscope and thermometer. The chemical bonding structure and barrier property of films were characterized by Fourier transform infrared (FT-IR) spectroscopy and the water vapor transmission rate (WVTR), respectively. The deposition rate of films increases with RF bias and nitrogen dilution due to increase of dissociated precursor and nitrogen ion incident to the substrate. In addition, we confirmed that the increase of nitrogen dilution and RF bias reduced WVTR of films. Because, on the basis of FT-IR analysis, the increase of the nitrogen gas flow rate and RF bias caused the increase of the C=N stretching vibration resulting in the decrease of macro and nano defects.

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Comparison of Shelf-life of Vienna Sausage Packed with Polyvinylidene Chloride and Nylon Laminated Film (PVDC와 Nylon 적층필름으로 포장한 비엔나소시지의 Shelf-life 비교)

  • Park, Hyung-Woo;Kim, Byeong-Sam;Park, Moo-Hyun
    • Korean Journal of Food Science and Technology
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    • v.21 no.2
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    • pp.252-257
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    • 1989
  • Nylon laminated low density polyethylene(LDPE) film is mostly used for package of Vienna sausage in Korea. The water vapor permeability and gas transmission rate of Nylon laminated LDPE film is higher than that of Oriented polypropylene/polyvinylidene chloride coated LDPE film. Comparision of shelf-life of Vienna sausage packed with both film was as follows. The water vapor permeability and gas transmission rate of PVDC coated film were 2.5 times lower and 20.7 to 30 times lower than those of Nylon laminated film, respectively. Shelf-lives of Vienna sausage packed with Nylon laminated film and PVDC coated films were 25 days and 31 days at $15^{\circ}C$, 32 days and 41 days at $5^{\circ}C$, respectively.

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Synthesis and Analysis of Nanosized TiO2 Particles Using a Tube Furnace (튜브 전기로를 이용한 TiO2 나노입자의 합성 및 특성 분석)

  • 배귀남;현정은;이태규;정종수
    • Journal of Korean Society for Atmospheric Environment
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    • v.20 no.3
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    • pp.411-419
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    • 2004
  • Titania particles are widely used as a photocatalyst to treat various contaminants in air and water. Titania particles were formed by vapor-phase oxidation of titanium tetraisopropoxide (TTIP) in a tube furnace between 773 and 1,273 K. The effect of process variables such as furnace temperature, flow rate of carrier air, and flow rate of sheath air on powder size and phase characteristics was investigated using a scanning mobility particle sizer (SMPS), transmission electron microscopy (TEM) and X-ray diffraction (XRD). The size distribution of synthesized titania particles was characterized with mode diameter and peak concentration. The mode diameter ranging from 20 to 80 nm decreased with increasing flow rates of sheath air and carrier air, and increased with increasing furnace temperature. The peak concentration increased with increasing flow rates of sheath air and carrier air The best synthetic condition for high production rate can be derived from the experimental data set represented by mode diameter and peak concentration. The crystal structure of synthesized titania particles was found to be anatase phase, ensuring high photocatalytic potential.

Application of Si3N4 Thin Film as a Humidity Protection Layer for Organic Light Emitting Diode (Si3N4 박막의 유기발광소자 수분침투 방지막으로의 응용)

  • Kim, Chang-Jo;Shin, Paik-Kyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.5
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    • pp.397-402
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    • 2010
  • In this paper, we studied WVTR(water vapor transmission rate) properties of $Si_3N_4$ thin film that was deposited using TCP-CVD (transformer coupled plasma chemical vapor deposition) method for the possibility of OLED(organic light emitting diode) encapsulation. Considering the conventional OLED processing temperature limit of below $80^{\circ}C$, the $Si_3N_4$ thin films were deposited at room temperature. The $Si_3N_4$ thin films were prepared with the process conditions: $SiH_4$ and $N_2$, as reactive gases; working pressure below 15 mTorr; RF power for TCP below 500 W. Through MOCON test for WVTR, we analyzed water vapor permeation per day. We obtained that WVTR property below 6~0.05 gm/$m^2$/day at process conditions. The best preparation condition for $Si_3N_4$ thin film to get the best WVTR property of 0.05 gm/$m^2$/day were $SiH_4:N_2$ gas flow rate of 10:200 sccm, working pressure of 10 mTorr, working distance of 70 mm, TCP power of 500 W and film thickness of 200 nm. respectively. The proposed results indicates that the $Si_3N_4$ thin film could replace metal or glass as encapsulation for flexible OLED.

Inorganic Thin Film Passivation Layer Fabricated by Plasma Enhanced Chemical Vapor Deposition

  • Lee, Bum-Hee;Park, Dong-Hee;Jin, Chang-Kyu;Kim, Tae-Hwan;Choi, Won-Kook
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.516-516
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    • 2013
  • Flexible Display를 제작하기 위해서는 유기소자를 보호하는 보호막이 필요하다. 유기소자는 산소 및 수분에 매우 취약하기 때문에 장수명을 확보하기 위해서는 추가적인 보호층이 필요하다. 본 논문에서는 이를 위해 Encapsulation 중 한 방법인 Barrier Film을 제작하고 그에 따른 광학적인 특성 및 수분 투습율을 조사하였다. Barrier film의 광학적 분석 방법으로는 XPS, SEM, AFM, Transmittance를 측정하였으며, XPS는 박막내의 화학적인 결합을 알기 위해서 사용되었고, SEM은 박막의 두께 및 박막내의 결함을 파악하고자 하였다. SEM을 통해 증착속도가 32.6 nm/m이라는 것을 관찰할 수 있었다. AFM을 통해 증착된 박막의 표면 거칠기를 파악하였다. Transmittance는 PET 기판을 사용하여 가시광 영역에서 80%이상의 투과도를 나타내었다. PECVD 장비를 사용하여 SiH4, NH3, N2가스를 사용하여 PET 필름 위에 박막을 증착하였으며, 유량을 10~400 sccm 내에서 변화시키고, RF Power는 각각 30~300 W 15분간 증착하였다. 제작된 보호막의 수분투습율은 $2{\times}10{_2}^{-2}g/m^2/day$ 이하의 값을 나타내었다.

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Passivation of organic light emitting diodes with $Al_2O_3/Ag/Al_2O_3$ multilayer thin films grown by twin target sputtering system

  • Jeong, Jin-A;Kim, Han-Ki
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.420-423
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    • 2008
  • The characteristics of $Al_2O_3/Ag/Al_2O_3$ multilayer passivaton prepared by twin target sputtering (TTS) system for organic light emitting diodes. The $Al_2O_3/Ag/Al_2O_3$ multilayer thin film passivation on a PET substrate had a high transmittance of 86.44 % and low water vapor transmission rate (WVTR) of $0.011\;g/m^2$-day due to the surface plasmon resonance (SPR) effect of Ag interlayer and effective multilayer structure for preventing the intrusion of water vapor. Using synchrotron x-ray scattering and field emission scanning electron microscope (FESEM) examinations, we investigated the growth behavior of Ag layer on the $Al_2O_3$ layer to explain the SPR effect of the Ag layer. This indicates that an $Al_2O_3/Ag/Al_2O_3$ multilayer passivation is a promising thin film passivation scheme for organic based flexible optoelectronics.

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Characterization of Al2O3 Thin Film Encasulation by Plasma Assisted Spatial ALD Process for Organic Light Emitting Diodes

  • Yong, Sang Heon;Cho, Sung Min;Chung, Ho Kyoon;Chae, Heeyeop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.234.2-234.2
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    • 2014
  • Organic light emitting diode (OLED) is considered as the next generation flat panel displays due to its advantages of low power consumption, fast response time, broad viewing angle and flexibility. For the flexible application, it is essential to develop thin film encapsulation (TFE) to protect oxidation of organic materials from oxidative species such as oxygen and water vapor [1]. In many TFE research, the inorganic film by atomic layer deposition (ALD) process demonstrated a good barrier property. However, extremely low throughput of ALD process is considered as a major weakness for industrial application. Recently, there has been developed a high throughput ALD, called 'spatial ALD' [2]. In spatial ALD, the precursors and reactant gases are supplied continuously in same chamber, but they are separated physically using a purge gas streams to prevent mixing of the precursors and reactant gases. In this study, the $Al_2O_3$ thin film was deposited by spatial ALD process. We characterized various process variables in the spatial ALD such as temperature, scanning speed, and chemical compositions. Water vapor transmission rate (WVTR) was determined by calcium resistance test and less than $10-^3g/m^2{\cdot}day$ was achieved. The samples were analyzed by x-ray photoelectron spectroscopy (XPS) and field emission scanning electron microscope (FE-SEM).

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Characterization of ALD Processed Al2O3/TiO2/Al2O3 Multilayer Films for Encapsulation and Barrier of OLEDs (OLED의 Barrier와 Encapsulation을 위한 원자층 증착 기술로 공정된 Al2O3/TiO2/Al2O3 다층 필름)

  • Lee, Sayah;Song, Yoon Seog;Kim, Hyun;Ryu, Sang Ouk
    • Journal of the Semiconductor & Display Technology
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    • v.16 no.1
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    • pp.1-5
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    • 2017
  • Encapsulation of organic based devices is essential issue due to easy deterioration of organic material by water vapor. Thin layer of encapsulation film is required to preserve transparency yet protecting materials in it. Atomic layer deposition(ALD) is a promising solution because of its low temperature deposition and quality of the deposited film. $Al_2O_3$ or $Al_2O_3/TiO_2/Al_2O_3$ multilayer film has shown excellent environmental protection characteristics despite of thin thicknesses of the films. $Al_2O_3/TiO_2/Al_2O_3$ multilayer and 1.5 dyad layer of $Al_2O_3/polymer/Al_2O_3$ deposited by ALD was measured to have water vapor transmittance rate(WVTR) well below the detection limit($5.0{\times}10^{-5}g/m^2day$) of MOCON Aquatran 2 equipment.

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Water Vapor Permeation Properties of Al2O3/TiO2 Passivation Layer Deposited by Atomic Layer Deposition (원자층 증착법을 이용한 Al2O3/TiO2 보호막의 수분 보호 특성)

  • Kwon, Tae-Suk;Moon, Yeon-Keon;Kim, Woong-Sun;Moon, Dae-Yong;Kim, Kyung-Taek;Shin, Sae-Young;Han, Dong-Suk;Park, Jae-Gun;Park, Jong-Wan
    • Journal of the Korean Vacuum Society
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    • v.19 no.6
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    • pp.495-500
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    • 2010
  • In this study, $Al_2O_3$ and $TiO_2$ films was deposited on to PES (poly(ethersulfon) substrate by using atomic layer deposition as functions of deposition temperature and plasma power. The density and carbon contents of $Al_2O_3$ and $TiO_2$ films was changed by varying process conditions. High density thin films was achieved through optimizing the process conditions. Buffer layer was deposited prior to the processing of upper thin films to avoid PES surface destruction during the high power plasma process and to enhances the tortuous path for water vapor permeation for the defect decoupling effect. The water vapor transmission rate by using MOCON test was investigated to analyze the effect. Water vaper permeation properties was improved by using the inorganic multi-layer passivation layer and activation energy of the water vapor permeation was increased.