• Proceedings of the Korean Magnestics Society Conference
• /
• 2013.12a
• /
• pp.139-140
• /
• 2013

We investigate effect of a point defect on the pinning potential for a perpendicular magnetic domain wall based on the NEB method. We find that this method can give a reasonable value for the pinning potential and allows us to study the effect of various geometrical and magnetic properties on the pinning potential. In the presentation, we will discuss the effect of Ku and wire width on the pinning potential in detail.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2008.12a
• /
• pp.304.1-304.1
• /
• 2008

• Journal of Magnetics
• /
• v.15 no.4
• /
• pp.169-172
• /
• 2010

The coercivity mechanism in permanent magnets was analyzed according to the effects of domain nucleation and domain wall pinning. The coercivity mechanism of a TbCo thin film with high perpendicular magnetic anisotropy was considered in terms of the local inhomogeneity in the thin film. The initial magnetization curves of the TbCo thin films demonstrated domain wall pinning to be the main contributor to the coercivity mechanism than domain nucleation. Based on the coercivity model proposed by Kronmuller et al., the inhomogeneity size acting as a domain wall pinning site was determined. Using the measured values of perpendicular anisotropy constant ($K_u$), saturation magnetization ($M_s$), and coercivity ($H_c$), the inhomogeneity size estimated in a TbCo thin film with high coercivity was approximately 9 nm.

• Journal of the Korean Ceramic Society
• /
• v.53 no.3
• /
• pp.312-316
• /
• 2016

The energetics of defects in the presence of domain walls in $LiNbO_3$ are characterized using density-functional theory calculations. Domain walls show stronger interactions with antisite defects than with interstitial defects or vacancies. As a result, antisite defects act as a strong pinning center for the domain wall in $LiNbO_3$. Analysis of migration behavior of the antisite defects across the domain wall shows that the migration barrier of the antisite defects is significantly high, such that the migration of antisite defects across the domain wall is energetically not preferable. However, further study on excess electrons shows that the migration barrier of antisite defects can be lowered by changing the charge states of the antisite defects. So, excess electrons can enhance the migration of antisite defects and thus facilitate domain wall movement by weakening the pinning effect.

• Journal of Magnetics
• /
• v.18 no.4
• /
• pp.417-421
• /
• 2013

The dominant magnetization reversal behavior of electrodeposited CoPt samples with various thicknesses deposited at different current densities was the domain wall motion by means of wall pinning. The magnetic interaction mechanism was dipolar interaction for all samples. The dipolar interaction strength was significantly affected by the sample thickness rather than by the current density, while the magnetic properties were closely related to the current density.

• Journal of the Korean Magnetics Society
• /
• v.21 no.6
• /
• pp.193-197
• /
• 2011

The thickness dependence of the magnetic switching volumes in electrodeposited CoPt films was investigated from the magnetization reversal and the magnetic interaction behavior. As the sample thickness is increased, the field difference between the wall pinning field ($H_{DW}$) and the nucleation field ($H_N$) as well as the absolute value of ${\Delta}$area are increased. Therefore, the decrement tendency of the switching diameter with increasing sample thickness can be well explained by the domain wall motion controlled by the domain wall pinning and the strength of dipolar interaction.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2007.05a
• /
• pp.66.1-66.1
• /
• 2007

• Proceedings of the Korean Magnestics Society Conference
• /
• 2010.06a
• /
• pp.72-72
• /
• 2010

• Journal of Magnetics
• /
• v.13 no.4
• /
• pp.136-139
• /
• 2008

A simplified equation of depinning fields from notches of ferromagnetic Permalloy nanowires is presented. The derived equation is given in the form of an explicit function of nanowire width and thickness, and notch depth and angle. The equation agrees with all micromagnetic simulation results to an accuracy of ${\pm}$ 0.5 mT.

• Journal of the Korean Magnetics Society
• /
• v.6 no.4
• /
• pp.199-203
• /
• 1996

To study the magnetization reversal behavior of Co/Pd multilayers, we first demagnetized the samples by the field-demagnetized method and then measured initial curves and minor loops. The coercivity and the perpendicular magnetic anisotropy were obtained from the perpendicular and parallel magnetization curves measured at different temperatures. We interpret our experimental results by applying several qualitative and semiquantative approaches. From these study, we found that the magnetization reversal behavior is dominated by the domain wall pinning for all samples and the coercivity incremental tendency can be explained by Kronmuller's formula $H_c(T)\;{\propto}\;r_0.K_u$.