• 한국결정성장학회지
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• 제26권5호
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• pp.171-174
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• 2016

The diamond wire sawing method to produce silicon wafers for the photovoltaic application is still a new and highly investigated wafering technology. This technology, featured as the higher productivity, lower wear of the wire, and easier recycling of the coolant, is expected to become the mainstream technique for slicing the silicon crystals. However, the saw marks on the wafer surface have to be investigated and improved. This paper discusses the removal of saw marks on diamond wire-sawn single crystalline silicon wafer. With a pretreatment step using tetramethyl ammonium hydroxide ($(CH_3)_4NOH$, TMAH) and conventional texturing process with KOH solution (1 % KOH, 8 % IPA, and DI water), the saw marks on the surface of the diamond wire-sawn silicon wafers can be effectively removed and they are invisible to naked eyes completely.

• Biotechnology and Bioprocess Engineering:BBE
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• 제8권4호
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• pp.240-245
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• 2003

The use of microfabricated microfluidic devices offers significant advantages over current technologies including fast analysis time and small reagent requirements. In the context of proteomic research, the possibility of using affinity-based separations for prefractionation of samples using microfluidic devices has significant potential. We demonstrate the use of microscale devices to achieve affinity separations of proteins using a device fabricated from borosilicate glass wafers. Photolithography and wet etching are used to pattern individual glass wafers and the wafers are fusion bonded at 650$^{\circ}C$ to obtain enclosed channels. A polymer has been successfully polymerized in situ and used either as a frit for packing beads or, when derivatized with Cibacron Blue 3GA, as a separation matrix. Both of these technologies are based on in situ UV photopolymerization of glycidyl methacrylate (GMA) and trimethylolpropane trimethacrylate (TRIM) in channels.

• 한국정밀공학회지
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• 제16권3호통권96호
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• pp.78-83
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• 1999

The bonding interface is dependent on the properties of surfaces prior to SDB(silicon wafer direct bonding). In this paper, we prepared silicon surfaces in several chemical solutions, and annealed bonding wafers which were combined with thermally oxidized wafers and bare silicon wafers in the temperature range of $600{\times}1000^{\circ}C$. After bonding, the bonding interface is investigated by an infrared(IR) topography system which uses the penetrability of infrared through silicon wafer. Using this procedure, we observed intrinsic bubbles at elevated temperatures. So, we verified that these bubbles are related to cleaning and drying conditions, and the interface oxides on silicon wafer reduce the formation of intrinsic bubbles.

• 비파괴검사학회지
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• 제36권1호
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• pp.1-8
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• 2016

Single crystalline silicon wafers having (100), (110), and (111) directions are employed as specimens for obtaining slowness profiles. Leaky Lamb waves (LLW) from immersed wafers were detected by varying the incident angles of the specimens and rotating the specimens. From an analysis of LLW signals for different propagation directions and phase velocities of each specimen, slowness profiles were obtained, which showed a unique symmetry with different symmetric axes. Slowness profiles were compared with elastic moduli of each wafer. They showed the same symmetries as crystal structures. In addition, slowness profiles showed expected patterns and values that can be inferred from elastic moduli. This implies that slowness profiles can be used to examine crystal structures of anisotropic solids.

• 한국결정성장학회지
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• 제21권5호
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• pp.187-192
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• 2011

비극성 a-GaN의 성장 시 기판의 경사각은 GaN epi의 품질을 결정하는 중요한 변수로서 양질의 a-GaN 성장을 위해서는 R-면 기판의 경사각이 정밀하게 제어된 기판이 요구된다. 본 연구에서는 R-면 기판의 경사각 ${\alpha}$와 ${\beta}$의 목표값이 각각 0, -0.1, -0.15, -0.2, -0.4, $-0.6^{\circ}$와 -0.1, 0, $0.1^{\circ}$인 절단기판을 제조하였다. 절단기판의 경사각을 x-ray를 이용하여 측정하고 통계적인 분석을 통해 기판의 경사각 제어공정에 대한 신뢰성을 평가하였으며, R-면 기판의 경사각의 공차는 ${\pm}0.03^{\circ}$의 값을 가졌다. R-면 기판은 상대적으로 큰 이방성에 의해 c-면 기판에 비해 휨(BOW)과 두께편차(TTV)가 상대적으로 큰 분포를 갖는 것으로 나타났다. AFM을 이용하여 기판 표면을 관찰한 결과, 측정된 R-면기판의 step 높이는 0.2~0.4 nm로 거의 일정한 값을 가졌으며 step 너비는 경사각 ${\alpha}$가 증가함에 따라 156 nm에서 26 nm로 감소하였으며 이와같은 R-면 기판의 step 구조의 변화는 epi 성장에 큰 영향을 미치는 것으로 판단된다.

• 폴리머
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• 제29권5호
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• pp.468-474
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• 2005

약물 전달체로서 캬비톨에 의해 개시된 PLGA와 PCL은 락타이드, 글라이콜라이드, 그리고 카프로락톤의 개환 중합에 의해서 합성되었다. 이들 합성고분자를 이용한 이식형 웨이퍼는 합성고분자와 모델 단백질 약물로서 소혈청알부민의 물리적 혼합 후에 성형 압축법에 의해서 간단히 제조되었다. 웨이퍼로부터 알부민의 방출량은 형광측정기를 사용하여 형광 강도에 의해서 측정되었다. 또한 웨이퍼에서 알부민의 방출거동은 콜라겐, 소장점막하조직, 폴리비닐피롤리돈, 그리고 폴리에틸렌글리콜과 같은 첨가제를 통해 조절되었다. PLGA와 PCL로만 준비된 웨이퍼에서의 알부민의 방출은 30일 동안 $10\%$ 미만의 느린 방출거동을 보였다. 그러나 첨가제를 함유한 웨이퍼는 첨가제 함량에 따라서 다양한 서방형의 방출거동을 보였다. 더욱이 콜라겐과 소장점막하조직과 같은 천연재료를 함유한 웨이퍼는 폴리비닐피롤리돈, 폴리에틸렌글리콜과 같은 합성재료를 함유한 웨이퍼보다 0차 방출의 거동을 보였다. 이러한 이식형 웨이퍼로부터 알부민의 방출은 천연재료의 첨가를 통해 쉽게 조절할 수 있음을 확인하였다.

• 한국세라믹학회지
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• 제29권11호
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• pp.863-869
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• 1992

A SOG(spin glass) solution with excellent wetting to Si wafers was prepared by acid-hydrolysis of Si(OEt)4 and Me2Si(OEt)2. The solution was spin coated on Si wafers, and effects of heat treatment of the film were characterized by TG/DTA, FTIR and Ellipsometry. Silica film was obtained by heat treatment at $600^{\circ}C$ within one hour, but heat treatment at 80$0^{\circ}C$ caused interfacial oxidation of the silicon substrate. Unexpectedly silica films with much better adhesion were obtained by curing at $600^{\circ}C$ for over 30 min. than those obtained by thermal oxidation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.578-581
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• 2001

Silicon wafers using DRAM devices required for high cleaning technology and this cleaning technology was evaluated by defect level or electron life time. This paper examined the correlation of SPV(Surface Photo Voltaic Analyzer) which analyzes diffusion length of minority carriers and DLTS(Deep level Transient Spectroscope) which analyzes defect level.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2002년도 ICCAS
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• pp.55.4-55
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• 2002

In the semiconductor fabrication, particle contamination is wide-spread and one of major causes to yield loss. Extensive testing has revealed that even careful handling of wafers during processing may cause photo-resist materials to flake off wafer edges. So, to remove the photo-resist at the outer 5mm of wafers, UV(Ultraviolet) rays are exposed. WEE (Wafer Edge Exposure) process station is the system that exposes the wafer edge as prespecified by controlling the positioning mechanism and maintaining the light intensity level In this work, WEE process station has been designed so as to significantly lower the amount of particle contamination which occurs even during the most r...

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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• pp.375-378
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• 1988

In this paper a newly designed rapid thermal process (RTP) structure is proposed to the slip induced in silicon wafers considerably. The reflectors and a graphite radiation were used to compensate the temperature difference causing slip in silicon wafers. From our experiments it is known that slip can be removed during a rapid thermal annealing at high temperature.