• Journal of Powder Materials
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• v.1 no.2
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• pp.159-166
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• 1994

The variation of the microstructures and the mechanical properties with varying vacuum hot pressing temperature and pressure was investigated in PyM processed 20 vol%) SiCw/ 2124Al composites. As increasing the vacuum hot pressing temperature, the aspect ratio of whiskers and density of composites increased due to the softening of 2124Al matrix with the increased amount of liquid phase. The tensile strength of composite increased with increasing vacuum hot pressing temperature up to $570^{\circ}C$ and became saturated above $570^{\circ}C$, To attain the high densification of composites above 99%, the vacuum hot pressing pressure was needed to be above 70 MPa. However, the higher vacuum hot pressing pressure above 70 MPa was not effective to increase the tensile strength due to the reduced aspect ratio of SiC whiskers from damage of whiskers during vacuum hot pressing. A phenomenological equation to predict the tensile strength of $SiC_w$/2124AI composite was proposed as a function including two microstructural parameters, i.e. density of composites and aspect ratio of whiskers. The tensile strength of $SiC_w$/2124AI were found more sensitive to the porosity than other P/M materials due to the higher stress concentration and reduced load transfer efficiency by the pores locating at whisker/matrix interfaces.

• Journal of the Korean Magnetics Society
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• v.9 no.6
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• pp.278-284
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• 1999

The effect of TiO$_2$addition has been studied on the power loss, density, initial permeability, resistivity, and microstructure of Mn-Zn ferrites. TiO$_2$addition increased the density of sintered body and decreased of the initial permeability. Activation energy for electron hopping as well as electrical resistivity increased with TiO$_2$addition. The toroidal core sintered at 1150 $^{\circ}C$ with 1.5 wt% of TiO$_2$demonstrated the power loss of 83 mW/㎤ at 1 MHz, 25 mT, 8$0^{\circ}C$. However, the same specimen sintered at 120$0^{\circ}C$ lead to the power loss, 1168 mW/㎤ at 1 MHz, 25 mT, 8$0^{\circ}C$ and developed an exaggerated grain growth.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.469-472
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• 2003

The nematic liquid crystal (NLC) aligning capabilities using a-C:H thin film deposited at the three kinds of rf bias condition were investigated. A high pretilt angle of about $11^{\circ}$ by the ion beam alignment method was observed on the a-C:H thin film (polymer-like carbon) deposited at 1W rf bias condition, and the low pretilt angle of the NLC was observed on the a-C:H thin film(diamond-like carbon) deposited at rf 30W and 60W bias condition. Consequently, the high NLC pretilt angle and the good aligning capabilities of LC alignment by the IB alignment method on the a-C:H thin film deposited at 1W rf bisa condition can be achieved.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.830-833
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• 2006

In this work, we provided a novel test method to verify the sealing materials for flexible LCD cell. The ultraviolet type curing sealing material with low process temperature was suitable for LCD cell assembly. We also proposed the sealing materials which passed 13200 times bending test within 20 mm curvature.

• Proceedings of the KSME Conference
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• 2003.11a
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• pp.205-209
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• 2003

The condensation water temperature $(T_{CW})$ distributions on the combi-drum washer of condensation type which the cloth washes, rinses, spins and dry cloth over a heater were measured using the thermocouples. During the drying process, in order to find out the relationship between the $T_{CW}$ distribution and the cloth dryness level $(C_{D1})$, the experiment was made for the dehydration rate of the cloth $(C_{D0})$ is 63%, the weight of cloth $(W_{C0})$ from 1 to 6kg. In result, according to $W_{C0}$ and $C_{D0}$, the distributions of $T_{CW}$ are very different. Using this tendency, it was appropriate and it developed the automatic drying algorithm and it was gotten dryness level regardless of $W_{C0}$, $C_{D0}$ and the other factor.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.53.1-53.1
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• 2009

실리콘 다층박막 태양전지를 위한 초고효율 실리콘 양자점 박막을 연구하기 위해 Silicon target과 Carbon target을 동시에 스퍼터하여 Silicon Carbide 박막을 증착하였다. Silicon Carbide 박막의 조성비는 target에 인가되는 RF Power를 조절하여 Auger Electro Spectroscopy를 사용하여 Si, C, O, N원소의 양을 정량화하여 측정하였다. Si Power를 200W에 고정하고, C Power를 0W에서 400W까지 변화시킬 때, $Si_{1-x}$ $C_x$ 박막에서 조성비 x는 0 ~ 0.43 범위였다. 이 박막을 증착 한 후에 질소 분위기에서 600 ~ $1000^{\circ}C$ 온도로 열처리를 진행하였다. High resolution TEM과 Raman 분석을 통해, 박막의 열처리 후 $Si_{1-x}$ $C_x$ 박막 내에 실리콘 양자점이 형성되었음을 관찰할 수 있었고, 2 ~ 10 nm 의 크기를 가지는 것으로 확인할 수 있었다. 이 실리콘 양자점을 포함한 $Si_{1-x}$ $C_x$ 박막을 적층하여 UV-VIS-NIR spectroscopy, FTIR및 PL와 같은 측정을 통해 광학적 에너지 밴드갭의 변화와 그에 따른 특성을 확인하였다.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.3
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• pp.117-125
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• 1996

The variation of the interfacial and the electrical properties of SiO$_{2}$TiW layers as a function of anneal temperature was extensively investigated. During the deposition of SiO$_{2}$ on TiW chemical bonds such as SiO$_{2}$, TiW, WO$_{3}$, WO$_{2}$ TiO$_{2}$ Ti$_{2}$O$_{5}$ has been created at the SiO$_{2}$/TiW interface. At the anneal temperature of 300$^{\circ}C$, WO$_{3}$ and TiO$_{2}$ bonds started to break due to the reduction phenomena of W and Ti and simultaneously the metallic W and Ti bonds started to create. Above 500$^{\circ}C$, a part of Si-O bonds was broken and consequently Ti/W silicide was formed. Form the current-voltage characteristics of Al/Sico$_{2}$(220$\AA$)/TiW antifuse structure, it was found that the breakdown voltage of antifuse device wzas decreased with increasing annealing temperature for SiO$_{2}$(220$\AA$)/TiW layer. When r, the insulating property of antifuse device of the deterioration of intermetallic SiO$_{2}$ film, caused by the influw of Ti and W.W.

• Korean Journal of Materials Research
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• v.26 no.12
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• pp.751-756
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• 2016

Graphite was diffusion-bonded by hot-pressing to W-25Re alloy using a Ti interlayer. For the joining, a uniaxial pressure of 25 MPa was applied at $1600^{\circ}C$ for 2 hrs in an argon atmosphere with a heating rate of $10^{\circ}C\;min^{-1}$. The interfacial microstructure and elemental distribution of the W-25Re/Ti/Graphite joints were analyzed by scanning electron microscopy (SEM). Hot-pressed joints appeared to form a stable interlayer without any micro-cracking, pores, or defects. To investigate the high-temperature stability of the W-25Re/Ti/Graphite joint, an oxy-acetylene torch test was conducted for 30 seconds with oxygen and acetylene at a 1.3:1 ratio. Cross-sectional analysis of the joint was performed to compare the thickness of the oxide layer and its chemical composition. The thickness of W-25Re changed from 250 to $20{\mu}m$. In the elemental analysis, a high fraction of rhenium was detected at the surface oxidation layer of W-25Re, while the W-25Re matrix was found to maintain the initial weight ratio. Tungsten was first reacted with oxygen at a torch temperature over $2500^{\circ}C$ to form a tungsten oxide layer on the surface of W-25Re. Then, the remaining rhenium was subsequently reacted with oxygen to form rhenium oxide. The interfacial microstructure of the Ti-containing interlayer was stable after the torch test at a temperature over $2500^{\circ}C$.

• Applied Chemistry for Engineering
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• v.24 no.6
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• pp.611-615
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• 2013

Vanadium oxide ($VO_2$) and tungsten-doped vanadium oxide (W-$VO_2$) powder, well known as thermochromic materials, were prepared from vanadium pentoxide ($V_2O_5$) and oxalic acid dihydrate by hydrothermal and calcination process. The crystal structure and thermochromic property of samples were analyzed using FE-SEM, XRD, XPS, DSC, and UV-Vis-NIR spectroscopy. With increasing the doping amount of W, the phase transition temperature of W-$VO_2$ sample decreased from $70^{\circ}C$ to $42^{\circ}C$. When heating W-$VO_2$ sample above the phase transition temperature, the UV-Vis-NIR spectrum was not changed in the visible range and shifted towards a low transparency in the full name (NIR) region.

• Journal of Astronomy and Space Sciences
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• v.7 no.1
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• pp.11-21
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• 1990

The osculating orbital elements include the mean, secular, long period, and short period terms. The iterative algorithm used for conversion of osculating orbital elements to mean orbital elements is described. The mean orbital elements of $W_c,\;W_s$, and L are obtained.