• 전자공학회논문지A
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• 제31A권3호
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• pp.46-52
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• 1994

We investigated theoretically the current-voltage characteristics of resonant tunneling diodes with a single quantum well structure. using a self-consistent method. This method is a numerical analysis which is able to include the effects of the undoped spacer layer and the band bending by charge accumulation and depletion on the contact layers which have not been considered in the flat-band model reported by Esaki. so that it is better suited to explain experimental results. The structure used is an $AL_{0.5}Ga_{0.5}AS/GaAs/Al_{0.5}Ga_{0.5}AS$ single quantum well. In this work. we estimate the theoretical current-voltage characteristics of the same structure, and then, the dependence of the current-voltage curves on the thickness of undoped spacer layers sandwiched between the barrier and highly n-doped GaAs contact layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.114-117
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• 2002

We have studied the dependence of current-voltage characteristics of Organic Light Emitting Diodes(OLEDs) on temperature-dependent variation. The OLEDs have been based on the molecular compounds. N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1, 1'- biphenyl-4, 4'-diamine (TPD) as a hole transport. tris(8-hydroxyquinolinoline) aluminum (III) ($Alq_3$) as an electron transport and Poly(3,4-ethylenedioxythiophene) (PEDOT:PSS) as a buffer layer. The current-voltage characteristics were measured in the temperature range of 10K and 300K. A conduction mechanism in OLEDs has been interpreted in terms of space-charge-limited current(SCLC) and tunneling region.Ā᐀會Ā᐀衅?⨀頱岒ᄀĀ저會Ā저?⨀⡌ឫഀĀ᐀會Ā᐀㡆?⨀쁌ឫഀĀ᐀會Ā᐀遆?⨀郞ග瀀ꀏ會Ā?⨀〲岒ऀĀ᐀會Ā᐀䁇?⨀젲岒Ā㰀會Ā㰀顇?⨀끩Ā㈀會Ā㈀?⨀䡪ഀĀ᐀會Ā᐀䡈?⨀Ā᐀會Ā᐀ꁈ?⨀硫Ā저會Ā저?⨀샟ගऀĀ저會Ā저偉?⨀栰岒ഀĀ저會Ā저ꡉ?⨀1岒ഀĀ저會Ā저J?⨀惝ග؀Ā؀會Ā؀塊?⨀ග䈀Ā切

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권7호
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• pp.322-327
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• 2002

Temperature-dependent current-voltage characteristics of organic light-emitting diodes(OLEDs) were studied in a device structure of ITO/TPD/Alq$_3$/Al to understand conduction mechanism. The current-voltage characteristics were measured in the temperature range of 8K ~ 300K. We analyzed an electrical conduction mechanism of the OLEDS using space-charge-limited current(SCLC) and Fowler-Nordheim tunneling. In the temperature range above 150k, the conduction mechanism could be explained by space charge limited current from the inversely proportional temperature dependence of exponent m. The characteristic trap energy is found to be about 0.15ev. At low temperatures below 150k, the Fowler-Nordheim tunneling conduction mechanism is dominant. We have obtained a zero field barrier height to be about 0.6~0.8eV.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 정기총회 및 창립40주년기념 학술대회 학회본부
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• pp.283-285
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• 1987

Transient conduction current (I - t characteristics) were measured in thin PPMMA (plasma-polymerized methyl methacrylate) films over the temperature range $60^{\circ}C-140^{\circ}C$ and the applied voltage range 3V - 30V. The current, which increased with temperature rise at constant applied voltage, showed less absorption current (current decay with time) at higher temperature region compared with those at lower temperature region. And the current, which increased with applied voltage rise at the constant temperature, showed less absorption current at higher voltage compared with those at lower voltage. The electric field current density characteristic curves were abtained from the conduction current values were after applying voltage for 30 minutes. And transient conduction currents were analyzed with high field conduction theories.

• 반도체디스플레이기술학회지
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• 제21권4호
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• pp.110-115
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• 2022

Accurate current-voltage modeling of solar cell systems plays an important role in power prediction. Solar cells have nonlinear characteristics that are sensitive to environmental conditions such as temperature and irradiance. In this paper, the output characteristics of photovoltaic module are accurately predicted by combining the artificial neural network and physical model. In order to estimate the performance of PV module under varying environments, the artificial neural network model is trained with randomly generated temperature and irradiance data. With the use of proposed model, the current-voltage and power-voltage characteristics under real environments can be predicted with high accuracy.

• 한국전기전자재료학회논문지
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• 제16권9호
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• pp.816-825
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• 2003

Current-voltage-luminance characteristics of organic light-emitting diodes (OLEDs) were measured in the temperature range of 10 K～300 K. Indium-tin-oxide (ITO) was used as an anode and aluminum as a cathode in the device. Organic of N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine (TPD) was used for a hole transporting material, and tris (8-hydroxyquinolinato) aluminum (Alq$_3$) for an electron transporting material and emissive material. And copper phthalocyanine (CuPc), poly(3,4-ethylenedi oxythiophene);poly(styrenesulfonate) (PEDOT:PSS), and poly(N-vinylcarbazole) (PVK) were used for hole-injection buffer layers. From tile analysis of electroluminescence (EL) and photoluminesccnce (PL) spectra of the Alq$_3$, the EL spectrum is more greenish then that of PL. And the temperature-dependent current-voltage characteristics were analyzed in the double and multilayer structure of OLEDS. Electrical conduction mechanism was explained in the region of high-electric and low-electric field. Temperature-dependent luminous efficiency and operating voltage were analyzed from the current-voltage- luminance characteristics of the OLEDS.

• 조명전기설비학회논문지
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• 제26권4호
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• pp.57-66
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• 2012

When typical Z-source DC/AC inverter(ZSI) is operated in high voltage gain area, because of its high duty ratio, voltage and current stress in Z-network of typical ZSI are increased. This paper proposes a new switched trans ZSI(STZSI) with two switched trans cells which consist of one trans and two diodes. To confirm the operation performance of the proposed system, the PSIM simulation is performed for typical ZSI, switched inductor ZSI and the proposed STZSI. Voltage / current stress and transient state characteristics of each method are compared under the condition of DC input voltage 100[V] and output phase voltage 66[Vrms]. As a result, we confirmed that transient state of the proposed STZSI is short compared with the conventional ZSI because the high voltage gain is obtained using the same duty ratio, also a low duty ratio is required for the same output voltage. Finally, we could know the proposed system have low voltage and current stress in Z-network compared with the conventional ZSI.

• 전력전자학회논문지
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• 제5권5호
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• pp.484-492
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• 2000

본 논문에서는 고조파전류 보상기능을 갖는 전압 보상기에 관한 연구를 수행하고 그 보상 특성을 해석하였다. 제안된 보상시스템은 하이브리드형 능동전력필터에서와 같이 LC로 구성되어 전력선에 병렬로 연결되는 수동필터와 직렬 변압기를 사용하여 전력선에 직렬로 연결되는 PWM 컨버터를 동시에 사용하는 회로구조를 갖는다. 제안된 보상시스템을 통해 다이오드 정류기와 같은 비선형 부하로 인해 발생되는 고조파 전류의 보상 및 전원 이상 현상으로 발생되는 전원측 이상 전압의 보상을 모두 수행한다. 단상 등가회로를 통해 보상시스템의 동작 원리를 설명하고 d-q 동기좌표계 축 상에서 보상시스템의 모든 제어를 수행하는 제어 알고리즘의 개발을 수행하였으며 실험을 통해 제안된 보상시스템의 보상특성을 확인하였다.

• 한국정보통신학회논문지
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• 제4권4호
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• pp.793-801
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• 2000

본 논문에서는 저전압 교류회로에서 과도이상전압에 대한 보호소자로 사용되는 산화아연형 바리스터의 뇌충격전류에 대한 영향에 대하여 기술하였다. 산화아연형 바리스터는 뇌충격전류에 의해 열화가 진행되며, 열화된 바리스터는 정상 운전전압에서도 열폭주에 도달하여 파괴되므로, 바리스터의 전기적 특성변화를 평가 하는 것은 대단히 중요하다. 바리스터를 가속열화시키기 위하여 국제규격 IEC 61000-4-5에 규정된 뇌충격전류를 적용하였으며, 1회의방전에 바리스터에는 약 12(J)의 에너지가 인가된다. 뇌충격전류의 인가에 따른 바리스터의 누설전류, 정격전압 등을 측정하였으며, 또한 바리스터에 뇌충격전류를 200회 인가 후 초기상태의 미세구조와 비교하였다. 실험결과로부터 바리스터는 뇌충격전류의 인가에 따라 누설전류는 증가하고 정격전압은 감소하는 경향을 나타내면서 전기적 성능이 저하됨을 확인하였다.

• 한국전기전자재료학회논문지
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• 제26권1호
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• pp.68-72
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• 2013

The series connection-type superconducting fault current limiter (SFCL) with two magnetically coupled circuits was suggested and its effectiveness through the analysis on the current limiting and recovery characteristics was described. The fault current limiting characteristics of the proposed SFCL as well as the load voltage sag compensating characteristics according to the winding direction were investigated. To confirm the fault current limiting and the voltage sag suppressing characteristics of the this SFCL, the short-circuit tests for the simulated power system with the series connection-type SFCL were carried out. The series connection-type SFCL designed with the additive polarity winding was shown to perform more effective fault current limiting and load voltage sag compensating operations through the fast quench occurrence right after the fault appears and the fast recovery operation after the fault removes than that with the subtractive polarity winding.