• Title/Summary/Keyword: voltage spike

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Clamp-mode Three-level High Voltage Gain Boost Converter using Coupled Inductor (결합인덕터를 이용한 전압 클램프 3-레벨 고승압 컨버터)

  • Kim, Su-Han;Cha, Hon-Nyong;Kim, Heung-Geun;Choi, Byung-Cho
    • The Transactions of the Korean Institute of Power Electronics
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    • v.17 no.6
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    • pp.500-506
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    • 2012
  • In this paper, a non-isolated high step-up and high efficiency boost converter is proposed. By using the 3-level boost converter structure, the proposed converter can obtain higher voltage gain than conventional high step-up converters. The voltage spike of the switching device is well clamped by using the clamp circuit composed of a clamp diode and a capacitor and the energy of the leakage inductor of coupled inductor is effectively transferred to output. Due to the 3-level structure, the equivalent switching frequency of the coupled inductor is doubled, which results in reduced inductor size. A 500 W prototype converter is built and tested to verify performance of the proposed converter.

LNA with Chopper Stabilization Technique Using Sample and Hold Circuit (샘플 홀드 회로를 이용한 초퍼 안정화 기법이 적용된 저잡음 증폭기)

  • Park, Youngmin;Nam, Minho;Cho, Kyoungrok
    • Journal of the Institute of Electronics and Information Engineers
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    • v.53 no.10
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    • pp.27-33
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    • 2016
  • This paper proposes a Low Noise Amplifier (LNA) with chopper stabilization technique with a sample-hold circuit. Chopper stabilization technique is effective in terms of reducing low frequency offset and flicker noise. Conventional chopper amplifier has a disadvantage in area because of using Low Pass Filter (LPF) for remove chopping spike. The proposed chopper amplifier employed sample and hold technique to decrease chopping spike instead of LPF that improves 36% in voltage damping and 11% in area.

Overvoltage Snubber for a Diode-Clamped 3-level IGBT Inverter (다이오드 클램프형 3-레벨 IGBT 인버터용 과전압 방지 스너버)

  • Jung, Jae-Hun;Song, Woong-Hyub;Nho, Eui-Cheol;Kim, In-Dong;Kim, Heung-Geun;Chun, Tae-Won;Yoo, Dong-Wook
    • The Transactions of the Korean Institute of Power Electronics
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    • v.14 no.6
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    • pp.514-521
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    • 2009
  • This paper deals with a new overvoltage snubber for a diode-clamped 3-level IGBT inverter. Usually most power converters use snubber circuits to protect the switching devices from voltage spike. However, it is difficult for the diode-clamped multi-level converter to be protected from voltage spike with overvoltage snubber since the series connection of the switching devices. To solve the problem the characteristic of a overvoltage snubber for a DC-DC converter is analyzed, and a new snubber for a diode clamped 3-level inverter is proposed. The performance of the proposed snubber is verified through experiments.

Design of A 2KW Soft-Switching ZVT Power Factor Correction Converter With Active Snubbers

  • Park, Kyoung-Soo;Kim, Yoon-Ho
    • Proceedings of the KIPE Conference
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    • 2001.10a
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    • pp.790-794
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    • 2001
  • In this paper a soft switching ZVT power factor converter using active snubbers is designed to improve efficiency and reduce voltage spike and parasitic ringing. The main switch achieves ZVT and the auxiliary switch performs with ZCS. A 2KW soft switching ZVT converter is designed with switching frequency 100kHz, output voltage 400VDC. Then the designed system is realized and experimental results show that the measured efficiency and power factor are over $97.45\%$ and 0.997 respectively with an input current THD less than $3\%$.

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Design of A 2KW Soft-Switching ZVT Power Factor Correction Converter with Active Snubbers (능동 스너버를 갖는 2KW 소프트 스위칭 ZVT 역률 보정 컨버터 설계)

  • Park Kyoung-Soo;Kim Yoon-Ho;Park Kyoung-Soo
    • Proceedings of the KIPE Conference
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    • 2001.07a
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    • pp.677-680
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    • 2001
  • In this paper a soft switching ZVT power factor converter using active snubbers is designed to improve efficiency and reduce voltage spike and parastic ringing. The main switch achieves ZVT and the auxiliary switch performs with ZCS. A 2KW soft switching ZVT converter is designed with switching frequency 100kHz, output voltage 400VDC. Then the designed system is realized and experimental results shows that the measured efficiency and power factor were over $97.45\%$ and 0.997 respectively with an input current THD less than $3\%$.

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A STUDY ON OPTIMAL DRIVING METHODS FOR IMPROVING TORQUB CHARACTERISTIC OF MINIATURE BRUSHLESS DC MOTOR (소형브러시리스 DC 전동기의 토크 특성향상을 위한 최적 구동법에 관한 연구)

  • Park, G.T.;Song, M.H.;Kim, Y.I.
    • Proceedings of the KIEE Conference
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    • 1989.07a
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    • pp.16-20
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    • 1989
  • In this paper, we describe the optimal driving method and magnetic flux distribution of permanent magnet which enhance torque characteristics in small-sized 3-phase brushless DC motors. The disadvantages of conventional $120^{\circ}$ constant current drive method are torque ripple, switching noise and spike voltage due to the inductance of stator coil. This shortcommings can be avoided by the switching slew-rate of driving current which is called linear voltage driving method. The aim of this study is to analyze linear voltage driving method quantatively and to determine optimal drive current waveform through computer simulation. The selection of commutation angle and slew rate of a new driving current at switching instants makes torque ripple index minimize and average torque maximize. And the validity of this new driving method was assured by Fourier analysis. Considering two dimensional nonlinear magnetic flux distribution on the permanent magnet, we suggest optimal flux distribution according to the presented driving method which improves torque characteristics.

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Memristors based on Al2O3/HfOx for Switching Layer Using Single-Walled Carbon Nanotubes (단일 벽 탄소 나노 튜브를 이용한 스위칭 레이어 Al2O3/HfOx 기반의 멤리스터)

  • DongJun, Jang;Min-Woo, Kwon
    • Journal of IKEEE
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    • v.26 no.4
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    • pp.633-638
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    • 2022
  • Rencently, neuromorphic systems of spiking neural networks (SNNs) that imitate the human brain have attracted attention. Neuromorphic technology has the advantage of high speed and low power consumption in cognitive applications and processing. Resistive random-access memory (RRAM) for SNNs are the most efficient structure for parallel calculation and perform the gradual switching operation of spike-timing-dependent plasticity (STDP). RRAM as synaptic device operation has low-power processing and expresses various memory states. However, the integration of RRAM device causes high switching voltage and current, resulting in high power consumption. To reduce the operation voltage of the RRAM, it is important to develop new materials of the switching layer and metal electrode. This study suggested a optimized new structure that is the Metal/Al2O3/HfOx/SWCNTs/N+silicon (MOCS) with single-walled carbon nanotubes (SWCNTs), which have excellent electrical and mechanical properties in order to lower the switching voltage. Therefore, we show an improvement in the gradual switching behavior and low-power I/V curve of SWCNTs-based memristors.

Investigation and Implementation of a Passive Snubber with a Coupled-Inductor in a Single-Stage Full-Bridge Boost PFC Converter

  • Meng, Tao;Ben, Hongqi;Li, Chunyan;Wei, Guo
    • Journal of Power Electronics
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    • v.13 no.2
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    • pp.206-213
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    • 2013
  • In this paper, an improved passive snubber is investigated in a single-phase single-stage full-bridge boost power factor correction (PFC) converter, by which the voltage spike across primary side of the power transformer can be suppressed and the absorbed energy can be transferred to the output side. When compared with the basic passive snubber, the two single-inductors are replaced by a coupled-inductor in the improved snubber. As a result, synchronous resonances in the snubber can be achieved, which can avoid the unbalance of the voltage and current in the snubber. The operational principle of the improved passive snubber is analyzed in detail based on a single-phase PFC converter, and the design considerations of both the snubber and the coupled-inductor are given. Finally, a laboratory-made prototype is built, and the experimental results verify the feasibility of the proposed method and the validity of the theoretical analysis and design method.

Switching Transient Analysis and Design of a Low Inductive Laminated Bus Bar for a T-type Converter

  • Wang, Quandong;Chang, Tianqing;Li, Fangzheng;Su, Kuifeng;Zhang, Lei
    • Journal of Power Electronics
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    • v.16 no.4
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    • pp.1256-1267
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    • 2016
  • Distributed stray inductance exerts a significant influence on the turn-off voltages of power switching devices. Therefore, the design of low stray inductance bus bars has become an important part of the design of high-power converters. In this study, we first analyze the operational principle and switching transient of a T-type converter. Then, we obtain the commutation circuit, categorize the stray inductance of the circuit, and study the influence of the different types of stray inductance on the turn-off voltages of switching devices. According to the current distribution of the commutation circuit, as well as the conditions for realizing laminated bus bars, we laminate the bus bar of the converter by integrating the practical structure of a capacitor bank and a power module. As a result, the stray inductance of the bus bar is reduced, and the stray inductance in the commutation circuit of the converter is reduced to more than half. Finally, a 10 kVA experimental prototype of a T-type converter is built to verify the effectiveness of the designed laminated bus bar in restraining the turn-off voltage spike of the switching devices in the converter.

A Study on the Soft-Switching Forward-Flyback Converter Using Auxiliary Inductor and Auxiliary Diode (보조 인덕터와 보조 다이오드를 적용한 소프트-스위칭이 가능한 포워드-플라이백 컨버터에 관한 연구)

  • Lee, A-Ra;Park, Jun-Woo;Hong, Sung-Soo
    • The Transactions of the Korean Institute of Power Electronics
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    • v.22 no.2
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    • pp.140-149
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    • 2017
  • This study proposes a new type of active-clamp forward-flyback converter with two transformers that operate in forward and flyback modes during on and off times, respectively, instead of not using an output inductor. The main switch can be turned on with zero-voltage switching (ZVS) using the leakage inductance of the transformer and the output capacitor of the main switch. The leakage inductance should be increased to ZVS. However, the ringing between the leakage inductance of the transformer and the parasitic output capacitance of the secondary side rectifier switches results in a serious voltage spike. A forward-flyback converter employing auxiliary inductor and auxiliary diode is proposed to overcome the problem. The operational principles are analyzed in detail and validated through experiments with a 385 V-to-53 V/37 A prototype.