• Economic and Environmental Geology
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• v.43 no.3
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• pp.259-267
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• 2010

Resistivity logging instruments were designed to measure electrical resistivity of formation, which can be directly interpreted to provide water-saturation profile. Short and long normal logging measurements are made under groundwater level. In some investigation sites, groundwater level reaches to a depth of a few meters. It has come to attention that the proximity of groundwater level might distort short and long normal logging readings, when the measurements are made near groundwater level, owing to the proximity of an insulating air. This study investigates the effects of the proximity of groundwater level (and also the proximity of earth surface) on the normal by simulating normal logging measurements near groundwater level. In the simulation, we consider all the details of real logging situation, i.e., the presence of wellbore, the tool mandrel with current and potential electrodes, and currentreturn and reference-potential electrodes. We also model the air to include the earth’'s surface in the simulation rather than the customary choice of imposing a boundary condition. To obtain apparent resistivity, we compute the voltage, i.e., potential difference between monitoring and reference electrodes. For the simulation, we use a twodimensional, goal-oriented and high-order self-adaptive hp finite element refinement strategy (h denotes the element size and p the polynomial order of approximation within each element) to obtain accurate simulation results. Numerical results indicate that distortion on the normal logging is greater when the reference potential electrode is closer to the borehole and distortions on long normal logging are larger than those on short normal logging.

• Journal of the Korean Electrochemical Society
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• v.17 no.2
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• pp.86-93
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• 2014

Mesoporous tin oxide (meso-$SnO_2$) with 5 nm mesopore and well-aligned $SnO_2$ nanowire-bundles with 5~7 nm diameters were prepared by template synthesis method. In addition to meso-$SnO_2$, meso-$SnO_2$/$SiO_2$, which has almost the same structure as meso-$SnO_2$ including $SiO_2$ used as the template were prepared by the modification of template synthesis. X-ray diffraction, N2 adsorption-desorption isotherms, transmission electron microscopy observed structures of meso-$SnO_2$ and meso-$SnO_2$/$SiO_2$. Although the meso-$SnO_2$/$SiO_2$ showed some positive evidences to suppress the volume change of meso-$SnO_2$ through cyclic voltammogram, electrochemical impedance spectroscopy, and voltage profiles during cycling, its cycle life was not improved highly to address modified structural effects. Thus, further study might be done to control the nanostructure of meso-$SnO_2$/$SiO_2$ for enhanced cycle performance.

• Journal of the Korean Electrochemical Society
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• v.21 no.3
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• pp.47-54
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• 2018

To maximize the areal capacity($mAh\;cm^{-2}$) of $LiNi_{0.5}Co_{0.2}Mn_{0.3}O_2$(NCM523) electrode with the same loading level of $15mg\;cm^{-2}$, three NCM523 electrodes with 4, 2, and 1 wt% poly(vinylidene fluoride)(PVdF) binder content are fabricated. Due to the delamination issue of electrode composite at the edge during punching process, the 1 wt% electrode is excluded for further evaluation. When the PVdF binder content decreases from 4 to 2 wt%, both adhesion strength and shear stress decrease from 0.4846 to $0.2627kN\;m^{-1}$ by -46% and from 3.847 to 2.013 MPa by -48%, respectively. Regardless of these substantial decline of mechanical properties, their initial electrochemical properties such as initial coulombic efficiency and voltage profile are almost the same. However, owing to high loading level, the 2 wt% electrode not only exhibits worse cycle performance than the 4 wt% electrode, but also cannot maintain its mechanical integrity only after 80 cycles. Therefore, if the binder content is reduced to increase the area capacity, the mechanical properties as well as the cycle performance must be carefully evaluated.

• Journal of radiological science and technology
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• v.17 no.2
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• pp.21-27
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• 1994

In this pauper, when the X-ray exposure condition is 70, 90, 110 kV, 10 mAs, FFD 180 cm, FSO $10{\times}10$, $35{\times}35\;cm$, toward the $36{\times}36{\times}15\;cm$ acryl phantom, the free space scatter dose rate at the 15th points in X-ray diagnostic room was measured by electrometer and 1800 co ionization chamber. Therefore, the free space scatter dose distribution profile was drown, and then, the free space scatter dose contribution percentage was Investigated. The obtained results are summarized as following. 1. The X-ray tube leakage dose rate of the experiment generator at the 1 m from focus was measured maximum 85 mR/hr, minimum 20 mR/hr, therefore, this values was appeared below the KS rules, 2. The free space scatter dose become to larger at the primary X-ray beam around area, and lower at the back ward X-ray tube. The maximum values were 3,812 mR/hr at the front Lt 1 m $45^{\circ}$ point, minimum 117 mR/hr at the back ward 1 m $180^{\circ}C$ point. 3. As the more tube voltage and field size increase, the more free space scatter dose contribution percentage become to increase, as to 90 kV from 70 kV, increase to 12 %, to 110 kV from 90 kV, increase to 18 %, and then, become to 11 % at the $10{\times}10\;cm$ and 87 % at the $35{\times}35\;cm$. 4. The 89 % of the total producted scatter ray occured from acryl phantom, at the X-ray tube housing 6 %, at the front side back wall 5 %. 5. The free space scatter dose contribution percentage at the one point build up 80 % from the phanton direction, 14 % from the X-ray tube and collimator direction, 2.2 % from the front wall, 1.8 % from the side wall, 1.7 % the back wall.

• Transactions of the Korean hydrogen and new energy society
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• v.10 no.1
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• pp.59-69
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• 1999

AlN thin films were fabricated by reactive sputtering for the application of MIS devices with Al/AlN/Si structure. It has investigated the surface morphology change, I-V characteristics, C-V characteristics, and chemical composition of AlN films with the intriducing time of hydrogen on the fixed deposition condition(RF power: 150W, sputtering pressure: 5mTorr, flow rate ratio of $Ar/N_2=1$, hydrogen concentration: 5%). By addition of the hydrogen the deposition rate decreased drastically whereas the surface morphology changed little. It has been found from the analysis of I-V and C-V characteristics curves that the films deposited with hydrogen addition in initial stage had lower leakage current density, lower flat band voltage and hystersis profile when compared with those with hydrogen addition in last stage. The oxygen concentration in AlN films decreased with addition of hydrogen gas, which suggesting a profitable role in the insulation and C-V characteristics of AlN films.

• Tunnel and Underground Space
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• v.15 no.1 s.54
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• pp.1-8
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• 2005

Measurement of convergence was/is carried out manually throughout the world for tunnels under construction. However, manual method has certain limitations in terms of applicability for the tunnels in operation. This paper describes state of the art of convergence monitoring systems which are available for measuring displacement of existing tunnels. These technologies are analyzed as follows: 1 The Sofo system using the fiber optic sensors has been applied to the stress measurement of the tunnel lining. It has not yet been used for the monitoring of tunnel convergence because of its cost and reliability 2. A TPMS(Tunnel Profile Monitoring System) using tilt sensors and displacement sensors is used for the convergence monitoring of highway tunnels, subway tunnels and underground ducts. 3. A BCS(Bassett Convergence System) using a pair of tilt sensors can be used for the convergence monitoring of tunnels, however the accuracy of the measurement has to be improved because it uses AC input voltage during data acquisition. The system has to be validated before it can be applied to the tunnels in operation. Convergence monitoring systems using TPMS and/or BCS are recommended to be evaluated and improved by a series or tests in tunnels under construction in order to be applied to the main measuring section and the tunnels in operation.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.420-420
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• 2013

We investigated oxygen plasma effect on defect states near the interface of AlGaN/GaN High Electron Mobility Transistor (HEMT) structure grown on a silicon substrate. After the plasma treatment, electrical properties were evaluated using a frequency dependant Capacitance-Voltage (C-V) and a temperature dependant C-V measurements, and a deep level transient spectroscopy (DLTS) method to study the change of defect densities. In the depth profile resulted from the temperature dependant C-V, a sudden decrease in the carrier concentration for two-dimensional electron gas (2DEG) nearby 250 K was observed. In C-V measurement, the interface states were improved in case of the oxygen-plasma treated samples, whereas the interface was degraded in case of the nitrogen-plasma treated sample. In the DLTS measurement, it was observed the two kinds of defects well known in AlGaN/GaN structure grown on sapphire substrate, which have the activation energies of 0.15 eV, 0.25 eV below the conduction band. We speculate that this defect state in AlGaN/GaN on the silicon substrate is caused from the decrease in 2DEG's carrier concentrations. We compared the various DLTS signals with filling pulse times to identify the characteristics of the newly found defect. In the filling pulse time range under the 80 us, the activation energies changed as the potential barrier model. On the other hand, in the filling pulse time range above the 80 us, the activation energies changed as the extended potential model. Therefore, we suggest that the found defect in the AlGaN/GaN/Si structure could be the extended defect related with AlGa/N/GaN interface states.

• Journal of the Korean Electrochemical Society
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• v.15 no.1
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• pp.27-34
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• 2012

$Li_3V_2(PO_4)_3$/carbon composite materials are synthesized from a sucrose-containing precursor. Amorphous $Li_3V_2(PO_4)_3/C$ (a-LVP/C) and crystalline $Li_3V_2(PO_4)_3/C$ (c-LVP/C) are obtained by calcining at $600^{\circ}C$ and $800^{\circ}C$, respectrively, and electrochemical performance as the negative electrode for lithium secondary batteries is compared for two samples. The a-LVP electrode shows much larger reversible capacity than c-LVP, which is ascribed to the spatial $Li^+$ channels and flexible structure of amorphous material. In addition, this electrode shows an excellent rate capability, which can be accounted for by the facilitated $Li^+$ diffusion through the defect sites. The sloping voltage profile is another advantageous feature for easy SOC (state of charge) estimation.

• Korean Journal of Materials Research
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• v.26 no.11
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• pp.604-610
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• 2016

We report on the fabrication and characterization of a novel $Cu_2O/CuO$ heterojunction structure with CuO nanorods embedded in $Cu_2O$ thin film as an efficient photocathode for photoelectrochemical (PEC) solar water splitting. A CuO nanorod array was first prepared on an indium-tin-oxide-coated glass substrate via a seed-mediated hydrothermal synthesis method; then, a $Cu_2O$ thin film was electrodeposited onto the CuO nanorod array to form an oxide semiconductor heterostructure. The crystalline phases and morphologies of the heterojunction materials were examined using X-ray diffraction and scanning electron microscopy, as well as Raman scattering. The PEC properties of the fabricated $Cu_2O/CuO$ heterojunction photocathode were evaluated by photocurrent conversion efficiency measurements under white light illumination. From the observed PEC current density versus voltage (J-V) behavior, the $Cu_2O/CuO$ photocathode was found to exhibit negligible dark current and high photocurrent density, e.g. $-1.05mA/cm^2$ at -0.6 V vs. $Hg/HgCl_2$ in $1mM\;Na_2SO_4$ electrolyte, revealing the effective operation of the oxide heterostructure. The photocurrent conversion efficiency of the $Cu_2O/CuO$ photocathode was estimated to be 1.27% at -0.6 V vs. $Hg/HgCl_2$. Moreover, the PEC current density versus time (J-T) profile measured at -0.5 V vs. $Hg/HgCl_2$ on the $Cu_2O/CuO$ photocathode indicated a 3-fold increase in the photocurrent density compared to that of a simple $Cu_2O$ thin film photocathode. The improved PEC performance was attributed to a certain synergistic effect of the bilayer heterostructure on the light absorption and electron-hole recombination processes.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.77-77
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• 2017

Titanium and its alloys offer attractive properties in a variety of applications. These are widely used for the field of biomedical implants because of its good biocompatibility and high corrosion resistance. Titanium anodizing is often used in the metal finishing of products, especially those can be used in the medical devices with dense oxide surface. Based on SAE/AMS (Society of Automotive Engineers/Aerospace Material Specification) 2488D, it has the specification for industrial titanium anodizing that have three different types of titanium anodization as following: Type I is used as a coating for elevated temperature forming; Type II is used as an anti-galling coating without additional lubrication or as a pre-treatment for improving adherence of film lubricants; Type III is used as a treatment to produce a spectrum of surface colours on titanium. In this study, we have focused on Type II anodization for the medical (dental and orthopedic) application, the anodized surface was modified with gray color under alkaline electrolyte. The surface characteristics were analyzed with Focused Ion Beam (FIB), Scanning Electron Microscopy (SEM), surface roughness, Vickers hardness, three point bending test, biocompatibility, and corrosion (potentiodynamic) test. The Ti-6Al-4V alloy was used for specimen, the anodizing procedure was conducted in alkaline solution (NaOH based, pH>13). Applied voltage was range between 20 V to 40 V until the ampere to be zero. As results, the surface characteristics of anodic oxide layer were analyzed with SEM, the dissecting layer was fabricated with FIB method prior to analyze surface. The surface roughness was measured by arithmetic mean deviation of the roughness profile (Ra). The Vickers hardness was obtained with Vickers hardness tester, indentation was repeated for 5 times on each sample, and the three point bending property was verified by yield load values. In order to determine the corrosion resistance for the corrosion rate, the potentiodynamic test was performed for each specimen. The biological safety assessment was analyzed by cytotoxic and pyrogen test. Through FIB feature of anodic surfaces, the thickness of oxide layer was 1.1 um. The surface roughness, Vickers hardness, bending yield, and corrosion resistance of the anodized specimen were shown higher value than those of non-treated specimen. Also we could verify that there was no significant issues from cytotoxicity and pyrogen test.