• 한국전기전자재료학회논문지
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• 제14권2호
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• pp.93-98
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• 2001

YMnO$_3$ films are excellent gate dielectric materials of ferroelectric random access memories (FRAMs) with MFSFET (metal -ferroelectric-semiconductor field effect transistor) structure because YMnO$_3$ films can be deposited directly on Si substrate and have a relatively low permittivity. Although the patterning of YMnO$_3$ thin films is the requisite for the fabrication of FRAMs, the etch mechanism of YMnO$_3$ thin films has not been reported. In this study, YMnO$_3$thin films were etched with Cl$_2$/Ar gas chemistries in inductively coupled plasma (ICP). The maximum etch rate of YMnO$_3$ film is 285$\AA$/min under Cl$_2$/(Cl$_2$+Ar) of 1.0, RF power of 600 W, dc-bias voltage of -200V, chamber pressure of 15 mTorr and substrate temperature of $25^{\circ}C$. The selectivities of YMnO$_3$ over CeO$_2$ and $Y_2$O$_3$ are 2.85, 1.72, respectively. The selectivities of YMnO$_3$ over PR and Pt are quite low. Chemical reaction in surface of the etched YMnO$_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS) surface of the selected YMnO$_3$ thin films was investigated with X-ray photoelectron spectroscopy(XPS) and secondary ion mass spectrometry (SIMS). The etch profile was also investigated by scaning electron microscopy(SEM)

• 대한기계학회논문집 C: 기술과 교육
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• 제3권3호
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• pp.175-181
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• 2015

전투차량의 내부는 혹서기에는 약 $80^{\circ}C$에 이를 만큼 고온 다습한 환경에 노출되어 감지거리를 측정하여 제어기에 신호를 전달하는 근접센서가 감지거리가 늘어나면서 결국에는 센서 자체의 금속물질을 인식하여 작동이 안되는 고장이 다발하여 원인분석 및 개선을 수행하게 되었다. 개선은 2차에 걸쳐 수행되었고 많은 시행착오를 거쳐 고온에 장기적으로 노출될 경우 고장이 발생된다는 것을 알아내어 개선방안을 도출한 결과, 이미터코일(Emitter Coil)을 한 개 더 추가하여 전압차이를 높여 감지 정확도를 향상시키고, 내부 몰딩 면적을 높여 진동 및 충격 내성을 강화하여 온도 및 습도 변화에 둔감하도록 설계개선을 하였다. 입증을 위해 고온 다습($85^{\circ}C$, 85%습도)한 환경챔버에서 136시간 내구시험을 실시하여 고장 발생이 없음을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.167-167
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• 2011

Magnetic random access memory (MRAM) is one of the prospective semiconductor memories for next generation. It has the excellent features including nonvolatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack is composed of various magnetic materials, metals, and a tunneling barrier layer. For the successful realization of high density MRAM, the etching process of magnetic materials should be developed. Among various magnetic materials, FePt has been used for pinned layer of MTJ stack. The previous etch study of FePt magnetic thin films was carried out using $CH_4/O_2/NH_3$. It reported only the etch characteristics with respect to the variation of RF bias powers. In this study, the etch characteristics of FePt thin films have been investigated using an inductively coupled plasma reactive ion etcher in various etch chemistries containing $CH_4$/Ar and $CH_4/O_2/Ar$ gas mixes. TiN thin film was employed as a hard mask. FePt thin films are etched by varying the gas concentration. The etch characteristics have been investigated in terms of etch rate, etch selectivity and etch profile. Furthermore, x-ray photoelectron spectroscopy is applied to elucidate the etch mechanism of FePt thin films in $CH_4$/Ar and $CH_4/O_2/Ar$ chemistries.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.408-408
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• 2012

It is well known that magnetic random access memory (MRAM) is nonvolatile memory devices using ferromagnetic materials. MRAM has the merits such as fast access time, unlimited read/write endurance and nonvolatility. Although DRAM has many advantages containing high storage density, fast access time and low power consumption, it becomes volatile when the power is turned off. Owing to the attractive advantages of MRAM, MRAM is being spotlighted as an alternative device in the future. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal- oxide semiconductor (CMOS). MTJ stacks are composed of various magnetic materials. FePt thin films are used as a pinned layer of MTJ stack. Up to date, an inductively coupled plasma reactive ion etching (ICPRIE) method of MTJ stacks showed better results in terms of etch rate and etch profile than any other methods such as ion milling, chemical assisted ion etching (CAIE), reactive ion etching (RIE). In order to improve etch profiles without redepositon, a better etching process of MTJ stack needs to be developed by using different etch gases and etch parameters. In this research, influences of $O_2$ gas on the etching characteristics of FePt thin films were investigated. FePt thin films were etched using ICPRIE in $CH_4/O_2/Ar$ gas mix. The etch rate and the etch selectivity were investigated in various $O_2$ concentrations. The etch profiles were studied in varying etch parameters such as coil rf power, dc-bias voltage, and gas pressure. TiN was employed as a hard mask. For observation etch profiles, field emission scanning electron microscopy (FESEM) was used.

• The Korean Journal of Physiology and Pharmacology
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• 제2권4호
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• pp.529-539
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• 1998

The effects of membrane surface charge originated from lipid head groups on ion channels were tested by analyzing the activity of single large conductance $Ca^{2+}-activated\;K^+$ (maxi K) channel from rat skeletal muscle. The conductances and open-state probability ($P_o$) of single maxi K channels were compared in three types of planar lipid bilayers formed from a neutral phosphatidylethanolamine (PE) or two negatively-charged phospholipids, phosphatidylserine (PS) and phosphatidylinositol (PI). Under symmetrical KCl concentrations $(3{\sim}1,000\;mM)$, single channel conductances of maxi K channels in charged membranes were $1.1{\sim}1.7$ times larger than those in PE membranes, and the differences were more pronounced at the lower ionic strength. The average slope conductances at 100 mM KCl were $251{\pm}9.9$, $360{\pm}8.7$ and $356{\pm}12.4$ $(mean{\pm}SEM)$ pS in PE, PS and PI membranes respectively. The potentials at which $P_o$ was 1/2, appeared to have shifted left by 40 mV along voltage axis in the membranes formed with PS or PI. Such shift was consistently seen at pCa 5, 4.5, 4 and 3.5. Estimation of the effect of surface charge from these data indicated that maxi K channels sensed the surface potentials at a distance of $8{\sim}9\;{\AA}$ from the membrane surface. In addition, similar insulation distance ($7{\sim}9\;{\AA}$) of channel mouth from the bilayer surface charge was predicted by a 3-barrier-2-site model of energy profile for the permeation of $K^+$ ions. In conclusion, despite the differences in structure and fluidity of phospholipids in bilayers, the activities of maxi K channels in two charged membranes composed of PS or PI were strikingly similar and larger than those in bilayers of PE. These results suggest that the enhancement of conductance and $P_o$ of maxi channels is mostly due to negative charges in the phospholipid head groups.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.163-166
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• 2002

We investigated structural and electrical properties of Metal-Oxide-Semiconductor(MOS) structure using Hafnium $oxide(HfO_{2})$ as high-k gate dielectric material. $HfO_{2}$ films are ultrathin gate dielectric material witch have a thickness less than 2.0nm， so it is spotlighted to be substituted $SiO_{2}$ as gate dielectric material. In this paper We have grown $HfO_{2}$ films with pt electrode on P-type Silicon substrate by RF magnetron sputtering system using $HfO_{2}$ target and oserved the property of semiconductor-oxide interface. Using pt electrode, it is necessary to be annealed at ${300^{\circ}C}$. This process is to increase an adhesion ratio between $HfO_{2}$ films with pt electrode. In film deposition process, the deposition time of $HfO_{2}$ films is an important parameter. Structura1 properties are invetigated by AES depth profile, and electrical properties by Capacitance-Voltage characteristic. Interface trap density are measured to observe the interface between $HfO_{2}$ with Si using High-frequency(1MHz) C-V and Quasi - static C-V characteristic.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.190-194
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• 2002

In this study, the etching of Au thin films have been performed in an inductively coupled CF4/Cl2/Ar plasma. The etch properties were measured as the CF4 adds from 0 % to 30 % to the Cl2/(Cl2 + Ar) gas mixing ratio of 0.2. Other parameters were fixed at a rf power of 700 W, a dc bias voltage of 150 V, a chamber pressure of 15 mTorr, and a substrate temperature of $30^{\circ}C$. The highest etch rate of the Au thin film was 370 nm/min at a 10 % additive CF4 into Cl2/(Cl2 + Ar) gas mixing ratio of 0.2. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. From x-ray photoelectron spectroscopy (XPS) analysis, the intensities of Au peaks are changed. There is a chemical reaction between Cl and Au. Au-Cl is hard to remove on the surface because of its high melting point and the etching products can be sputtered by Ar ion bombardment. We obtained the cleaned and steep profile.

• 반도체디스플레이기술학회지
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• 제15권2호
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• pp.26-31
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• 2016

The Townsend to glow discharge mode transition was investigated in the dielectric barrier discharge (DBD) helium plasma source which was powered by 20 kHz / $4.5 kV_{rms}$ high voltage at atmospheric pressure. The spatial profile of the electric field strength at each modes was measured by using the intensity ratio method of two helium emission lines (667.8 nm ($3^1D{\rightarrow}2^1P$) and 728.1 nm ($3^1S{\rightarrow}2^1P$)) and the Stark effect. ICCD images were analyzed with consideration for the electric field property. The Townsend discharge (TD) mode at the initial stage of breakdown has the light emission region located in the vicinity of the anode. The electric field of the light emitting region is close to the applied field in the system. Immediately, the light emitting region moves to the cathode and the discharge transits to the glow discharge (GD) mode. This mode transition can be understood with the ionization wave propagation. The electric field of the emitting region of GD near cathode is higher than that of TD near anode because of the cathode fall formation. This observation may apply to designing a DBD process system and to analysis of the process treatment results.

• 대한전자공학회논문지
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• 제21권5호
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• pp.46-54
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• 1984

3μm 게이트 길이를 가지는 n-well CMOS 공정이 개발되었고 이의 응용 가능성을 검토하였다. Thres-hold 전압은 이온주입으로 쉽게 조절할 수 있으며, 3μm 채널 길이에서 short 채널 효과는 무시할 수 있다. Contact 저항에 있어서 Al-n+ 저항값이 커서 VLSI 소자의 제작에 장애 요인이 될 것으로 보인다. CMOS inverter의 transfer 특성은 양호하며, (W/L) /(W/L) =(10/5)/(5/5)인 89단의 ring oscillator로부터 구한 게이트당 전달 지연 시간은 3.4nsec 정도이다. 본 공정의 설계 규칙에서 n-well과 p-substrate에 수 mA의 전류가 흐를 때 latch-up이 일어나며, well 농도와 n+소오스-well간의 간격에 크게 영향을 받는다. 따라서 공정과 설계 규칙의 변화에 따른 latch-up 특성에 집중적인 연구가 필요할 것으로 사료된다.

• Journal of Electrochemical Science and Technology
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• 제2권1호
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• pp.45-50
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• 2011

A series of expanded graphites is prepared from graphite oxide by changing the heat-treatment temperature, and their lithiation/de-lithiation mechanism and rate performance are examined. A featureless sloping profile is observed in their charge-discharge voltage and dilatometry profiles, which is contrasted by the stepwise plateau-like profiles observed with the pristine graphite. With an increase in the heat-treatment temperature from $250^{\circ}C$ to $850^{\circ}C$, the interlayer distance becomes smaller whereas the electric conductivity becomes larger, both of which are resulted from a removal of foreign atoms (mainly oxygen) from the interlayer gaps. The expanded graphite that is prepared by a heat-treatment at $450^{\circ}C$ delivers the best rate performance, which seems to be a trade-off between the $Li^+$ ion diffusivity that is affected by the interlayer distance and electrical conductivity.