• 한국세라믹학회지
• /
• 제39권1호
• /
• pp.16-20
• /
• 2002

Semiconducting (Ba.Sr)TiO$_3$ceramic device, which shows the PTCR effect, has been usually used as a current limiter. In this case, the device should endure the condition under the high electric field. In this study, the dynamic electrical properties of the PTCR device under high voltage has been evaluated. Two different formulated powders were used and the sintered bodies exhibited the different grain size and porosity. The wide range of characterization such as complex impedance spectroscopy, microstructure, I-V characteristics and voltage dependence of resistivity of the samples were performed. The PTCR effect of the specimen containing coarse grains was very sensitively dependent on the AC electric field, showing that it was inversely pro-portional to the grain boundary potential barrier. The withstanding voltage was proportional to the potential barrier of grain boundary.

• Progress in Superconductivity
• /
• 제11권2호
• /
• pp.158-161
• /
• 2010

We measured the critical current of a Cooper pair transistor consisting of two Josephson junctions and a gate electrode. The Cooper pair transistors were fabricated by using electron-beam lithography and double-angle evaporation technique. The Gate voltage dependence of critical current was measured by observing voltage jumps at various gate voltages while sweeping bias current. The observed oscillation was 2e-periodic, which shows the Cooper pair transistor had low level of quasiparticle poisoning.

• 전자공학회논문지C
• /
• 제34C권12호
• /
• pp.37-42
• /
• 1997

A new temperature and supply-insensitive CMOS current reference circuit was designed and tested. Te temperature insensuitivity was achieved by eliminating the mobility dependence term through the multiplication of two current components, one which is proportional to mobility and the other which is inversely proportional to mobility, by using a newly designed CMOS square root circuit. The CMOS sqare root circuit was derived from its bipolar counterpart by operating the MOS transistors in the subthreshold region. The supply insensitivity was achieved by using an internal voltage generator. Te test chip was designed ans sent out for fabrication by using a 2.mu.m double-poly double-metal n-well CMOS technology. When an external voltage source was used for the square root circuit, the maximum variation and the average temperature sensitivity were measured to be 3% and 21.4ppm/.deg.C, respectively, for the temperature range of -15~130.deg.C. The maximum current variation with supply voltage was measured to be 3% within the commerical supply voltage range of 4.5~5.5V at 30.deg. C.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1996년도 추계학술대회 논문집 학회본부
• /
• pp.212-214
• /
• 1996

The growth of tree is affected by voltage, frequency, temperature, mechanical stress, etc.. This paper describes the effect of applied voltage on the growth of tree in DGEBA/MDA/GN(10 phr) system. As applied voltage increased, the time to breakdown of the system reduced. As applied time increased, the tree length of X-axis increased with sigmoid shape, however, the tree length of Y-axis increased sharply at the initial step and then were nearly constant. The phenomena of tree were complicated more and more, as applied time increased.

• 한국자기학회지
• /
• 제5권5호
• /
• pp.538-542
• /
• 1995

The etching characteristics of magnetic thin films of permalloy and Fe-based alloys are investigated. The thin films are fabricated by rf magnetron sputtering and the substrates used are silicon and glass. Etching is done by ion beam technique and the main process parameters investigated are beam voltage, beam current and accelerating voltage. The etch rate of the magnetic films is proportional to the beam current, but it is not directly related to the accelerating voltage and beam voltage. The dependence of etch rate on the process parameters can be explained by ion current density. It is found that the ion beam etching is effective in obtaining well-developed micro-patterns on the permalloy and Fe- based magnetic thin films.

• 한국자기학회지
• /
• 제26권6호
• /
• pp.201-205
• /
• 2016

본 연구에서는 터널링 자기저항(TMR) 소자의 임피던스 스펙트럼을 측정하였으며, 절연체 장벽에 의한 터널링 저항($R_T$)과 터널링 전기 용량을 갖는 축전기($C_T$)가 병렬로 연결된 등가회로를 활용하여 TMR 소자의 완화 특성을 분석하였다. 두 자성체의 자화가 반평행 및 평행 상태일 때 모두 완화 주파수는 교류 전압에 따라 증가하는 경향을 보였다. 스펙트럼 측정 결과로부터 도출한 $R_T$는 TMR소자의 전형적인 바이어스 전압 의존성을 보였으나, $C_T$는 기하학적인 전기 용량에 비하여 약 4,500배 이상 증가하였다. 이러한 $C_T$의 거대한 증가는 TMR 소자의 고속 동작을 제한하는 요소로 작용하므로, 고속 동작을 요구하는 TMR 소자는 초고용량 $C_T$의 특성을 설계에 반영하여야 한다.

• The Korean Journal of Physiology and Pharmacology
• /
• 제26권5호
• /
• pp.397-404
• /
• 2022

Fesoterodine, an antimuscarinic drug, is widely used to treat overactive bladder syndrome. However, there is little information about its effects on vascular K⁺ channels. In this study, voltage-dependent K⁺ (Kv) channel inhibition by fesoterodine was investigated using the patch-clamp technique in rabbit coronary artery. In whole-cell patches, the addition of fesoterodine to the bath inhibited the Kv currents in a concentration-dependent manner, with an IC₅₀ value of 3.19 ± 0.91 μM and a Hill coefficient of 0.56 ± 0.03. Although the drug did not alter the voltage-dependence of steady-state activation, it shifted the steady-state inactivation curve to a more negative potential, suggesting that fesoterodine affects the voltage-sensor of the Kv channel. Inhibition by fesoterodine was significantly enhanced by repetitive train pulses (1 or 2 Hz). Furthermore, it significantly increased the recovery time constant from inactivation, suggesting that the Kv channel inhibition by fesoterodine is use (state)-dependent. Its inhibitory effect disappeared by pretreatment with a Kv 1.5 inhibitor. However, pretreatment with Kv2.1 or Kv7 inhibitors did not affect the inhibitory effects on Kv channels. Based on these results, we conclude that fesoterodine inhibits vascular Kv channels (mainly the Kv1.5 subtype) in a concentration- and use (state)-dependent manner, independent of muscarinic receptor antagonism.

• 한국초전도학회:학술대회논문집
• /
• 한국초전도학회 2004년도 High Temperature Superconductivity Vol.XIV
• /
• pp.33-33
• /
• 2004

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
• /
• pp.722-725
• /
• 2004

Voltage step-down characteristics in Ring/Dot type piezoelectric transformer were examined as a function of the area of input electrode when the area of output electrode is fixed. The effects of driving frequency and load resistance on the voltage step-down characteristics were also examined. Voltage gain was greatly dependent on the driving frequency and load resistance, and showed a maximum gain at resonance frequency of the step-down transformer. The frequency where the maximum output voltage appears increased about 0.2% as the load resistance increased from 10 to $150\Omega$. As the area of input electrode increased, the voltage gain and the efficiency of the transformer increased. Frequency dependence of efficiency of the step-down transformer revealed a similar tendency with the voltage gain curves. The maximum efficiency remarked 94% when the input voltage and the load resistance were 20 $V_{PP}$ and $120\Omega$, respectively.

• 대한전자공학회논문지
• /
• 제27권11호
• /
• pp.119-125
• /
• 1990

전기광학 소자인 비스무스 실리콘 옥사이드($Bi_{12}SiO_{20}$ : 이하 BSO라 칭함)와 편광자(polarizer), 1/4파장판(1/4 waveplate), 검광자(analyzer)와 결합하여 광변조기를 만들었고 이를 전압세선로 이용할 수 있도록 전기광학 측정 시스템을 구성하고 그 특성을 실험하였다. 송수신부인 E/O 변환기 및 O/E 변환기는 LED와 PIN-PD로 구성하여 구동되며 전송로는 코아/클래드경이 $100/140{\mu}m$인 멀티모드 광파이버를 사용하였다. 센서부와 광파이버 사이에는 셀폭 마이크로렌즈로서 결합하였다. 실험에 앞서 맥스웰 방정식과 파동방정식을 이용하여 BSO 단결성 내부에서 일어나는 광파의 전파특성에 관한 행렬식을 구하였고 센서가 갖는 광강도 변조식을 유도하였다. 실험 결과로부터 제작된 BSO 전압 센서는 교류전압 50V~800V(60Hz)에서 ${\pm}2.5{\%}$ 측정오파를 보였다. 인가전압의 증가에 따라 출력의 포화값이 커지는데 이러한 현상은 광강도 변조식에서 센서의 선광성에 기인한다는 것을 확인할 수 있었다. 센서의 온도특성 실험결과 $-20^{\circ}C~60^{\circ}C$에서 변화율은 ${\pm}0.6{\%}$ 이하로 측정되었다. 주파수 특성실험 결과 DC~100KHz까지 양호한 특성을 나타냄을 확인할 수 있었다.