• Progress in Superconductivity and Cryogenics
• /
• v.17 no.1
• /
• pp.10-13
• /
• 2015

High-temperature superconducting coated conductors (HTS-CCs) are good candidates for resistive superconducting fault current limiter (RSFCL) applications. However, the high current density they can carry and their low thermal diffusivity expose them to the risk of thermal instability. In order to find the best compromise between stability and cost, it is important to study the heat transfer between HTS-CCs and the liquid nitrogen ($LN_2$) bath. This paper presents an experimental method to monitor in real-time the temperature of a quenched HTS-CC during a current pulse. The current and the associated voltage are measured, giving a precise knowledge of the amount of energy dissipated in the tape. These values are compared with an adiabatic numerical thermal model which takes into account heat capacity temperature dependence of the stabilizer and substrate. The result is a precise estimation of the heat transfer to the liquid nitrogen bath at each time step. Measurements were taken on a bare tape and have been repeated using increasing $Kapton^{(R)}$ insulation layers. The different heat exchange regimes can be clearly identified. This experimental method enables us to characterize the recooling process after a quench. Finally, suggestions are done to reduce the temperature increase of the tape, at a rated current and given limitation time, using different thermal insulation thicknesses.

• Journal of the Korean Magnetics Society
• /
• v.16 no.3
• /
• pp.186-191
• /
• 2006

Ferromagnetic amorphous $Ni_{16}Fe_{62}Si_8B_{14}$ and $Co_{70.5}Fe_{4.5}Si_{15}B_{10}$ layers have been devised and incorporated as free layers of magnetic tunnel junctions (MTJs) to improve MRAM reading and writing performance. The NiFeSiB and CoFeSiB single-layer film exhibited a lower saturation magnetization ($Ms=800emu/cm^3,\;and\;560emu/cm^3$, respectively) compared to that of a $Co_{90}Fe_{10}(Ms=1400emu/cm^3)$. Because amorphous ferromagnetic materials have lower Ms than crystalline ones, the MTJs incorporating amorphous ferromagnetic materials offer lower switching field ($H_{sw}$) values than that of the traditional CoFe-based MTJ. The double-barrier MTJ with an amorphous NiFeSiB free layer offered smooth surface resulting in low bias voltage dependence, and high $V_h\;and\;V_{bd}$ compared with the values of the traditional CoFe-based MTJ.

• The Korean Journal of Physiology and Pharmacology
• /
• v.3 no.3
• /
• pp.351-356
• /
• 1999

The present study was aimed at investigating whether the calcium current in the vascular smooth muscle (VSM) cells is altered in renal hypertension. Two-kidney, one clip (2K1C) and deoxycorticosterone acetate (DOCA)-salt hypertension were made in Sprague-Dawley rats. Rats without clipping the renal artery or implanting DOCA were used as control for 2K1C and DOCA-salt hypertension, respectively. Four weeks after clipping, systolic blood pressure was significantly higher in 2K1C rats than in control $(192{\pm}24\;and\;119{\pm}4$ mmHg, respectively, n=16 each). DOCA-salt rats also showed a higher blood pressure $(180{\pm}15$ mmHg, n=18) compared with control $(121{\pm}6$ mmHg, n=14). VSM cells were enzymatically and mechanically isolated from basilar arteries. Single relaxed VSM cells measured $5{\sim}10\;{\mu}m$ in width and $70{\sim}150\;{\mu}m$ in length were obtained. VSM cells could not be differentiated in size and shape between hypertensive and normotensive rats under light microscopy. High-threshold (L-type) calcium currents were recorded using whole-cell patch clamp technique. The amplitude of the current recorded from VSM cells was larger in 2K1C hypertension than in control. Neither the voltage-dependence of the calcium current nor the cell capacitance was significantly affected by 2K1C hypertension. By contrast, the amplitude of the calcium current was not altered in DOCA-salt hypertension. These results suggest that high-threshold calcium current of the VSM cells is altered in 2K1C hypertension, and that calcium channel may not be involved in calcium recruitment of VSM in DOCA-salt hypertension.

• Polymer(Korea)
• /
• v.27 no.1
• /
• pp.40-45
• /
• 2003

In this work, the effect of different contents of $Fe_3O_4$ and temperature variation on the electrical conductivity ($\sigma$) in the polar acrylonitrile butadiene rubber (NBR)/$Fe_3O_4$ (magnetite) mixture system was investigated. It was found that the percolation threshold concept holds true for the conductive particle-filled composites where $\sigma$ indicates a nearly sharp increase when the concentration of magnetite in the mixture exceeds 22%. The temperature dependence of $\sigma$ was thermally activated below and at the percolation threshold ($P_c$). Magnetite acted as reinforcing and conductive filler for NBR. At room temperature and higher voltages, the electrical current was proportional to the square of voltage ($I{\propto}V^2$) for the composites which contain 30 phr of magnetite. Moreover, it was shown that the composites with magnetite of 50 phr showed the highest tensile strength and elongation at break, which was due to the formation of optimal physical interlock and crosslinking. The results of 100%, 200%, and 300% Young moduli said that the moduli are largely correlated with reinforcement effect of magnetite and viscosity of the blends from torque curve.

• Journal of the Korean Magnetics Society
• /
• v.15 no.6
• /
• pp.311-314
• /
• 2005

We investigated the composition dependence of the tunneling magnetoresistance (TMR) behavior and the stability of the magnetic tunnel junctions (MTJs) with TiAlOx barrier and the microstructural evolution of TiAl alloy films. The TMR ratio increased up to $49\%$ at $5.33\;at\%$ Ti. In addition, a significant tunneling magnetoresistance (TMR) value of $20\%$ was maintained after annealing at $450^{\circ}C$, and the breakdown voltage ($V_B$) of and 1.35 V were obtained in the MTJ with $5.33\;at\%$ Ti-alloyed AlOx barrier. These results were closely related to the enhanced quality of the barrier material microstructure in the pre-oxidation state. Ti alloying enhanced the barrier/electrode interface uniformity and reduced microstructural defects. These structural improvements enhanced not only the TMR effect but also the thermal and electrical stability of the MTJs.

• KIEE International Transactions on Electrophysics and Applications
• /
• v.11C no.3
• /
• pp.70-74
• /
• 2001

Admittance or impedance spectroscopy is one of the powerful tools to study dielectric relaxation and loss processes in organic and inorganic materials. In this study, the frequency dependent properties of an indium tin oxide/tris(8-hydroxyquinoline) aluminum($Alq_3$)/aluminum structure have been studied. The conductance of the $Alq_3$ film increases with the DC applied voltage up to 4V and decreases above 4V in the low frequency region. This indicates that the resistance of the device decreases with the applied bias due to the carrier injection enhancement, thereafter the injected carriers form the space charge and the additional injection of carriers is prevented. The Cole-Cole plot of the admittance takes a one-semicircle shape, which means that the device can be modeled as a parallel resistor-capacitor network. The resistance and capacitance were estimated as 8.62k${\Omega}$ and 2.7nF, respectively, at 3V in the low frequency region. The dielectric constant ( ${\epsilon}'$ ) of the $Alq_3$ film is independent of the frequency in the low frequency region below 100kHz, while the frequency dependency was observed at above 100kHz. The dielectric loss factor ( ${\epsilon}"$ ) of the $Alq_3$ film shows the dielectric dispersion below 100kHz and dielectric absorption in higher frequency domain. The dispersion is thought to be related to the hopping process of the carriers. The ${\epsilon}"$ is proportional to the reciprocal of the frequency. The dielectric relaxation time was extracted to about 0.318${\mu}s$ from the dielectric absorption spectrum.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.22 no.12
• /
• pp.87-94
• /
• 2008

This parer presents the soil ionization phenomena and parameters associated to characterize the transient performances of grounding system under lightning impulse Currents. Ionization properties in occurring some soil media were experimentally investigated. The cylindrical test cell was employed in order to facilitate the analysis of soil breakdown field intensity and ionized radius. The soil breakdown field intensity, dependence of impedance on the amplitude of impulse current, V-I curves and transient impedances were discussed based on the voltage and current oscillograms. It was found that the ionization process and dynamic behaviors were strongly dependent on the types of soil and two current peaks were not observed in highly water-saturated soils. The results presented in this paper will provide useful information on the improvement of transient performance of a grounding system subjected to lightning impulse Current considering the soil ionization.

• Journal of Sensor Science and Technology
• /
• v.5 no.3
• /
• pp.87-92
• /
• 1996

The PLT thin films on (100) cleaved MgO single crystal substrate have been fabricated by rf magnetron sputtering using a PbO-rich target. The dependence of physical and electrical properties on the degree of c-axis orientation has been studied. The degree of c-axis orientation of PLT thin films depends on fabrication conditions. Fabrication conditions of the PLT thin films were such that substrate temperature, working pressure, gas ratio of $Ar/O_{2}$, and rf power density were $640^{\circ}C$, 10 mTorr, 10 seem, and $1.7\;W/cm^{2}$, respectively. In these conditions, the PLT thin film showed the Pb/Ti ratio of 1/2 at the surface, the resistivity of $8{\times}10^{11}{\Omega}{\cdot}cm$, and dielectric constant of 110. The pyroelectric infrared sensors with these PLT thin films showed the peak to peak voltage of 450 m V and signal to noise ratio of 7.2.

• Applied Science and Convergence Technology
• /
• v.25 no.5
• /
• pp.88-91
• /
• 2016

The $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$+xwt%PbO systems at temperature of $1250^{\circ}C$ for 4 hours was successful synthesized. In this study, PbO-doped $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$ systems with non-linear behaviors showed ordering-degree dependence at the low temperature range were prepared using the columbite precursor method. And the characteristic of remnant polarization vs. electric field were analyzed. The pyroelectric, dielectric and piezoelectric properties of partially disordered $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$+xwt%PbO solid solutions were studied as a function of temperature, frequency, and electric field. It showed distinct features of temperature dependent of pyroelectric coefficient, spontaneous polarization and dielectric constant at about $50^{\circ}C$. The figure of merit was calculated as pyroelectric coefficient, dielectric constant and dissipation factor. It was found that the high voltage responsivity FV, high detectivity FD were $0.0373m^2/C$ and $0.6735{\times}10^{-4}Pa{-1/2}$, respectively, in the $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$+3.0 wt%PbO system.

• Journal of the Korean institute of surface engineering
• /
• v.47 no.5
• /
• pp.239-243
• /
• 2014

The electrical and optical properties of amorphous In-Tin-Zinc-Oxide(ITZO) deposited at room temperature using rf-magnetron sputtering were investigated. The amorphous ITZO thin films were obtained at the composition of In:Sn:Zn = 6:2:2, 4:3:3, and 2:4:4, but the ITZO (8:1:1) showed a crystalline phase of bixbyite structure of In2O3. The resistivity of ITZO could be controlled by oxygen pressure in the sputtering ambient. The resistivity of post-annealed ITZO thin films exhibited the dependence on the amount of Indium. Optical energy band gap and transmittance increased as the amount of indium in ITZO increased. For the device application with ITZO, the bottom-gated thin-film transistor using ITZO as a active channel layer was fabricated. It showed a threshold voltage of 1.42V and an on/off ratio of $5.63{\times}10^7$ operated with saturation field-effect mobility of $14.2cm^2/V{\cdot}s$.