• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.171-174
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• 2004

The surge characteristics of $Pr_6O_{11}$-based ZnO varistors consisting of $ZnO-Pr_6O_{11}-CoO-Cr_2O_3-Er_2O_3$ ceramics were investigated with sintering temperature in the range of $1335{\sim}1345^{\circ}C$. As the sintering temperature is raised, the average grain size was marked1y increased in the range of $9.67{\sim}14.07\;{\mu}m$ and the ceramic density was increased in the range of $5.46{\sim}5.59\;g/cm^3$. While, the nonlinear exponent was decreased in the range of 64.9~44.1 and the clamping voltage ratio was improved in the range of 1.99~2.08. The best varistor properties was obtained from the varistors sintered at $1335^{\circ}C$, exhibiting a maximum (64.9) in the nonlinear exponent and a minimum (1.99) in the clamping voltage ratio.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.467-471
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• 2001

DC accelerated aging characteristics of $Pr_{6}O_{11}$-based ZnO varistors, which are composed of $ZnO+Pr_{6}O_{11}+CoO+Cr_{2}O_{3}+Dy_{2}O_{3}$ ceramics were investigated with CoO content in the range of 0.5 - 5.0 mol%. The varistors doped with 1.0 mol% revealing maximum value(66.61) in the nonlinear exponent exhibited excellent stability, in which the variation rates of the varistor voltage, the nonlinear exponent and leakage current are -1.93%, -10.48%, and +288.79%, respectively, under DC accelerated aging stress, such as $(0.85V_{lmA}/115^{\circ}C/24h)+(0.90V_{lmA}120^{\circ}C/24h)+(0.95V_{lmA}/125^{\circ}C/24h)+(0.95V_{lmA}/150^{\circ}C/24h)$. Next the varistors doped with 2.0 mol% exhibiting the nonlinear exponent of 47.39 showed high stability.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.11
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• pp.1061-1066
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• 2006

This paper presents the electrical characteristics with manufacturing process and performance evaluation of high performance zinc oxide varistors. ZnO varistors were fabricated with typical ceramic production methods with different thickness and the structural and electrical characteristics of ZnO varistors were investigated. All varistors exhibited high density, which was in the range of $5.41{\sim}5.49g/cm^3$. In the electrical properties, the reference voltage increased in the range of $4.410{\sim}5.250kV$ with increasing their thickness and the residual voltage exhibited the same trends as the reference voltage. In the long duration current impulse withstand test, E-2 and F-1 samples failed at the two and four shots of impulse current, respectively, but E-1 and F-2 samples survived 18 shots during the test. Before and after this test, the variation ratio of residual voltage of E-1 and F-2 samples were -0.34 % and 0.05 %, respectively, which were in the acceptance range of 5 %. According to the results of tests, it is thought that if the fabrication process such as insulating coating, sintering condition, and soldering method is improved, these ZnO varistors would be possible to apply to the station class arresters in the near future.

• Journal of the Semiconductor & Display Technology
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• v.4 no.4 s.13
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• pp.1-4
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• 2005

The chemical composition and uniaxial compressive stress are varied to observe their effect on the current-voltage characteristics of ZnO based ceramics. The variation of chemical composition produces two kinds of ceramics showing ohmic and nonohmic current-voltage characteristics. The current at a fixed voltage increased with the increase of the compressive stress for both ohmic and nonohmic ceramics. Ceramics showing nonohmic behavior exhibit better reversible return of current-voltage curve when the applied compressive stress is removed from the ceramics than those showing ohmic behavior do. We found an appropriate chemical composition showing linear relation between current and stress at a fixed voltage. The ceramic materials with an appropriate chemical composition can be used as a potential sensing material in pressure sensors.

• Journal of Power System Engineering
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• v.4 no.1
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• pp.45-50
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• 2000

Circuit breakers have traditionally employed mechanical methods to interrupt excessive currents. According to power semiconductor technology advances in power electronic device, some mechanical breakers are replaced with solid state equivalents. Advantages of the contactors using semiconductor devices include faster fault interrupting, fault current limiting, no arc to contain or extinguish and intelligent power control, and high reliability. This paper describes the design of a static $100{\pm}10%V$ and 0 to 50A DC self-protected contactor with 85A "magnetic tripping" and 100A interruption current at $2.2A/{\mu}s$ short circuit of load condition using a new power device the HARRIS MCT (600V-75A). The self-protection circuit of this system is designed by the classical ZnO varistor for energy absorption and turn-off snubber circuit ("C" or "RCD") of the MCT.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.28 no.12
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• pp.124-129
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• 2014

This paper describes the analysis of the effect on personnel computer in case of turning off power supply of main breaker in general electrical installation. In order to analyze the effect on personnel computer in case of turning off the power supply of main breaker, the switching impulse generator has been designed and fabricated which makes it possible to evaluate the effect on electrical product by switching impulse. The switching impulse tests were carried out for personnel computer according to applied voltage and number of switching impulse. As a consequence, switching impulse had not a significant influence on personnel computer in this study. The varistor of power input section functions as a protection of switching impulse as well as lightning impulse. The results will be used to related organization, and electrical product manufacturer, and residents.

• Journal of the Korean Society of Safety
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• v.26 no.6
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• pp.13-19
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• 2011

The purpose of this study is to examine the cause of damage to electrolytic capacitors and to present the heat generation mechanism in order to prevent the occurrence of similar problems. From the analysis results of electrolytic capacitors collected from accident sites, the fire causing area can be limited to the primary power supply for the initial accident. From the tests performed by applying overvoltage, surge, etc., it is thought that the fuse, varistor, etc., are not directly related to the accidents that occurred. The analysis of the characteristics using a switching regulator showed that the charge and discharge characteristics fell short of standard values. In addition, it is thought that heated electrolytic capacitors caused thermal stress to nearby resistances, elements, etc. It can be seen that the heat generation is governed by the over-ripple current, application of AC overvoltage, surge input, internal temperature increase, defective airtightness, etc. Therefore, when designing an electrolytic capacitor, it is necessary to comprehensively consider the correct polarity arrangement, appropriate voltage application, correct connection of equivalent series resistance(ESR) and equivalent series inductance(SEL), rapid charge and discharge control, sufficient margin of dielectric tangent, etc.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.10
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• pp.479-484
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• 2002

Recently it is reported that many a malfunction of ELB which is represented by non-operated type ELB for an impulse wave, is caused by lightning impulse and transient ground potential rise due to nearby lightning strokes. In order to examine the cause of malfunction, 5 samples were investigated experimentally in this study. As each ELB has a different leakage current detecting circuit and wiring method, various characteristics were measured. As a result, all of them brought about malfunctions under the lightning impulse voltage less than 7 kV and the surge current less than 3 kA. Also the different aspects were measured with a polarity of injected surge and a position of MOV to protect the inner circuit of ELB. The Position and effects of protecting devices were suggested as a remedy.

• Journal of the Korean Ceramic Society
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• v.30 no.11
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• pp.955-961
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• 1993

Sintering behavior and microstructure development in the system ZnO-Bi2O3-CoO-Zn7Sb2O12 with Zn7Sb2O12 content(0.1mol%~2mol%) were studied. The pyrochlore phase was formed by the reaction of the Zn7Sb2O12 with Bi2O3 phase during heating (below 90$0^{\circ}C$). The formation temperature of the liquid phase (Bi2O3) was dependent on the Zn7Sb2O12 contents (about 74$0^{\circ}C$ for Bi2O3/Zn7Sb2O12>1 by the eutectic melting in the ZnOBi2O3 system, and about 110$0^{\circ}C$ for Bi2O3/Zn7Sb2O12 1 by the decomposition of pyrochlore phase). Hence, sintering behavior and microstructure development were determined virtually by the Bi2O3/Zn7Sb2O12 ratio, which were promoted by liquid (Bi2O3) phase and retarded by the pyrochlore (or spinel) phase. The grain growth of ZnO during sintering was sluggish with increasing Zn7Sb2O12 contents.

• Journal of the Korean Ceramic Society
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• v.37 no.11
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• pp.1044-1050
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• 2000

ZnO-Pr$_{6}$O$_{11}$-Co$_3$O$_4$-CaO 사성분계에 SiO$_2$를 0.4at%까지 첨가하여 1180, 1200 및 125$0^{\circ}C$에서 소성하여 미세구조 및 전기적인 특성을 조사하였다. 소성온도 120$0^{\circ}C$ 이상에서 치밀한 시편을 얻을 수 있었고, Si는 주로 입계에 분포하고 있으며, SiO$_2$첨가는 결정립성장을 억제하였다. 이 현상은 고상소결만이 일어나 120$0^{\circ}C$에서 소결된 시편과 액상소결이 일어난 125$0^{\circ}C$에서 소결된 시편 모두에서 관찰되었으며, SiO$_2$첨가에 의한 기공의 증가에 기인하는 것으로 판단된다. SiO$_2$의 첨가에 의해 바리스터의 비선형계수가 크게 변화하였으며, 시편의 소성과정이 고상소결인 경우 비선형계수가 증가한 반면 액상소결인 경우에는 감소하였다. 적절한 양의 SiO$_2$(약 0.3at%)를 첨가하여 액상이 형성되지 않는 120$0^{\circ}C$에서 소성하여 80 이상의 비선형계수를 갖는 바리스터를 제조할 수 있었다.