• 한국전기전자재료학회논문지
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• 제28권10호
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• pp.648-651
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• 2015

The characterizations of zinc oxide (ZnO) buffer layers grown by unbalanced magnetron (UBM) sputtering under various substrate temperatures for inverted organic solar cells (IOSCs) were investigated. UBM sputter grown ZnO films exhibited higher crystallinity with increasing the substrate temperature, resulting in uniform and large grain size. Also, the electrical properties of ZnO films are improved with increasing substrate temperature. In the results, the performance of IOSCs critically depended on the substrate temperature during the film growth because the crystalllinity of the ZnO film affect the carrier mobility of the ZnO film.

• 한국건축시공학회지
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• 제3권4호
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• pp.73-78
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• 2003

In this Study, we examined the influence of characteristics of rolling loads by casters on separation resistance of substrate concrete and synthetic resin floor coating. In the experiment, we first prepared floor samples having substrate concrete of various compressive strength, surface hardness and surface configurations, then put the coated samples to the test of separation resistance with Rolling Caster Loading Machine. Three loading conditions consisted of different kinds of casters, rolling conditions, and coating materials. Consequently, we clarified that the grade of separation resistance varied widely according to the characteristics of substrate concrete and rolling loads.

• 한국환경과학회지
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• 제24권9호
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• pp.1221-1231
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• 2015

The present study was conducted to find a way to recycle the coir substrate by investigating changes in its physical and chemical properties based on the number of use year. Specific gravity of unused coir substrate was $0.212g/cm^3$, while it was higher for the substrate used for 2 years. Porosity was different depending on the number of use year. The porosity of unused substrate was 51.9%, but it increased to 68.6% after used for 2 years. In general, physical and chemical properties were better in the coir substrate used for 2 years than in unused one. The number of leaves, leaf area, flesh weight and dry weight of oriental cabbage and lettuce were higher in coir substrate used for 2 years than those in unused one. Whereas, no significant difference was observed between the substrates used for one year and 2 years, indicating that the one time-used wast substrate could be recycled for cultivating vegetables. Growth of the vegetables was improved when organic fertilizer composed of complex organics with different mixing ratios was provided to the coir substrate, compared to untreated plot. The optimum mixing ratio of the wast substrate and complex organics was 2:8(v/v) for fertilization using wast coir substrate. Therefore, coir substrate generally wasted after being used for one time was reuseable by supplying organic fertilizer.

• 한국세라믹학회지
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• 제53권1호
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• pp.81-86
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• 2016

The effect of substrate rotation speed on the phase forming behavior and microstructural variation of 8 wt% yttria ($Y_2O_3$) stabilized $ZrO_2$ (8YSZ) coatings as a thermal barrier coating has been investigated. 8YSZ coatings with $100{\sim}200{\mu}m$ thickness were deposited by electron beam-physical vapor deposition onto a super alloy (Ni-Cr-Co-Al) substrate with a bond coating (NiCo-CrAlY). The width of the columnar grains of the 8YSZ coatings increased with increasing substrate rotation speed from 1 to 30 rpm at a substrate temperature range of $900{\sim}950^{\circ}C$. In spite of the different growth behaviors of coatings with different substrate rotation speeds, the phases of each coating were not changed remarkably. Even after post heat treatments with various conditions of the coated specimens fabricated at 20 rpm, only a change of color was noticeable, without any remarkable change in the phase or microstructure.

• 전기학회논문지
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• 제56권1호
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• pp.132-138
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• 2007

Carbon nanotubes (CNTs) arc grown on Ni catalysts employing an inductively-coupled plasma chemical vapor deposition (ICP-CVD) method. The structural and field-emissive properties of the CNTs grown are characterized in terms of the substrate-bias applied. Characterization using the various techniques, such as field-omission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM), Auger spectroscopy (AES), and Raman spectroscopy, shows that the structural properties of the CNTs, including their physical dimensions and crystal qualities, as well as the nature of vertical growth, are strongly dependent upon the application of substrate bias during CNT growth. It is for the first time observed that the provailing growth mechanism of CNTs, which is either due to tip-driven growth or based-on-catalyst growth, may be influenced by substrate biasing. It is also seen that negatively substrate-biasing would promote the vertical-alignment of the CNTs grown, compared to positively substrate-biasing. However, the CNTs grown under the positively-biased condition display a higher electron-emission capability than those grown under the negatively-biased condition or without any bias applied.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.901-904
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• 2001

For the c-axis oriented epitaxial YBa$_2$Cu$_3$O$_{7-{\delta}}$ thin film on r-cut sapphire substrate it is necessary to deposit buffer layers. The CeO$_2$buffer layer was deposited on sapphire substrate using RF magnetron sputtering system. We investigated XRD pattern of CeO$_2$thin films at various sputtering conditions such as sputtering gas ratio, sputtering power, target to substrate distance, sputtering pressure and substrate temperature. The optimum condition was 15 mTorr with deposition pressure, 1:1.2 with $O_2$and Ar ratio and 9cm with target to substrate distance. The CeO$_2$(200) peak was notable for a deposition temperature above 75$0^{\circ}C$. The YBa$_2$Cu$_3$O$_{7-{\delta}}$ was deposited on CeO$_2$buffered r-cut sapphire substrate using pulsed laser ablation. The YBa$_2$Cu$_3$O$_{7-{\delta}}$CeO$_2$(200)/A1$_2$O$_3$thin film was exhibited a critical temperature of 89K.xhibited a critical temperature of 89K.

• E2M - 전기 전자와 첨단 소재
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• 제8권1호
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• pp.6-12
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• 1995

High Tc superconducting YBa$_{2}$Cu$_{3}$$O_{7-x}$ thin films were prepared on various substrates by off-axis rf magnetron sputtering method to examine the substrate effects on the film structure and its R-T characteristics. The SEM analysis showed that the surface morphology of the grown YBa$_{2}$Cu$_{3}$O.sub 7-x/, film has different characteristic structure with different substrate used. The film on (100) SrTiO$_{3}$ substrate has critical current density of 3*10$^{5}$ A/cm$^{2}$ at 77K under zero magnetic field. The X-ray diffraction measurements revealed that the films on (100) SrTiO$_{3}$ substrate have mixed a-axis and c-axis normal to the substrate surface and the films on (100) MgO and ZrO$_{2}$/sapphire substrates have c-axis normal orientation to the substrate surface. However, YBa$_{2}$Cu$_{3}$$O_{7-x}$ films on (100) sapphire substrates showed no preferential orientation.ion.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.330-333
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• 2002

The substrate temperature is an important parameter in thin film deposition process. In this paper the effects of the substrate temperature on the properties of CuIn0.75Ga0.25Se2(CIGS) thin films are reported. Structure, surface morphology and optical properties of CIGS thin films deposited at various substrate temperatures have been investigated using a number of analysis techniques. X-ray diffraction (XRD) analysis shows that CIGS films exhibit a strong <112> preferred orientation. As expected, at higher substrate temperatures the films displayed a higher degree of crystallinity. The <112> peak was also enhanced and other CIGS peaks appeared simultaneously These results were supported by experimental work using Raman spectroscopy. The Raman spectra of the as-grown CIGS thin films show only the Al mode peak. The intensity of this peak was enhanced at higher deposition temperatures. Scanning electron microscopy (SEM) results revealed very small grains in films fabricated at 48$0^{\circ}C$ substrate temperature. When the substrate temperature was increased the average grain size also increased together with a reduction in the number and size of the voids. The deposition temperature also had a significant influence on the transmission spectra.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 추계학술대회 논문집
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• pp.106-108
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• 2003

We fabricated Ni and Ni-W alloys for use as a substrate in YBCO coated conductor applications and evaluated the effect of W in Ni on texture, microstructure and surface morphology, and hardness of substrate. Pure Ni, Ni-2 at.％W, and Ni-5at.％W alloy substrates were prepared by plasma arc melting, cold rolling, and the recrystallization heat treatment at various temperature (700- 130$0^{\circ}C$). It was observed that Ni-W alloy substrates had stronger cube texture and maintained it at higher annealing temperature, compared to pure Ni substrate : The full-width at half- maximums of in-plane texture was 13.40$^{\circ}$ for Ni substrate and 4.42$^{\circ}$-5.57$^{\circ}$ for Ni-W substrate annealed at 100$0^{\circ}C$. In addition, it was observed that the Ni-W substrate had smaller grain size, shallower boundary depth, and higher hardness, compared to those of pure Ni substrate.

• 한국재료학회지
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• 제14권7호
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• pp.494-499
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• 2004

The structural, electrical and optical properties of GaN epilayers grown on various ion-implanted sapphire(0001) substrates by MOCVD were investigated. Sapphire substrates have been widely adopted to grow high quality GaN epilayer despite the large differences of lattice constant and thermal expansion coefficient between them. So, GaN or AlN buffer layer and pre-treatment was indispensably introduced before the GaN epilayer growth. The ion-implanted substrate's surface had decreased internal free energies during the growth of the ions implanted sapphire(0001) substrates. The crystal and optical properties of GaN epilayers grown in ions implanted sapphire(0001) substrate were improved. Also, excessively roughened and modified surface by ions degraded the GaN epilyers. Not only the ionic radius but also the chemical species of implanted sapphire(0001) substrates could improve the properties of GaN epilayers grown by MOCVD. This result implies that higher quality of GaN epilayers was achieved by using ion-implanted sapphire(0001) substrate with various ions.