• Title/Summary/Keyword: various substrate

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Radiation Characteristics of a Probe-Fed Microstrip Patch Antenna on a Finite Grounded High Permittivity Substrate

  • Kwak, Eun-Hyuk;Yoon, Young-Min;Kim, Boo-Gyoun
    • Journal of Electrical Engineering and Technology
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    • v.10 no.4
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    • pp.1738-1745
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    • 2015
  • Radiation characteristics of a probe-fed rectangular microstrip patch antenna printed on a finite grounded high permittivity substrate are investigated systematically for various square grounded dielectric substrate sizes with several thicknesses and dielectric constants by experiment and full wave simulation. The effect of the substrate size on the radiation characteristics of a rectangular patch antenna is mainly determined by the effective dielectric constant of surface waves on a grounded dielectric substrate. As the effective dielectric constant of surface waves increases, the substrate sizes for the maximum broadside gain and the required onset for a large magnitude of squint angle decrease, while the variations of the broadside gain, the front-to-back ratio, and the magnitude of squint angle versus the substrate size increase due to the increase of the power of the surface wave.

Evaluating the bond strength between concrete substrate and repair mortars with full-factorial analysis

  • Felekoglu, Kamile Tosun;Felekoglu, Burcu;Tasan, A. Serdar;Felekoglu, Burak
    • Computers and Concrete
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    • v.12 no.5
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    • pp.651-668
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    • 2013
  • Concrete structures need repairing due to various reasons such as deteriorative effects, overloading, poor quality of workmanship and design failures. Cement based repair mortars are the most widely used solutions for concrete repair applications. Various factors may affect the bond strength between concrete substrate and repair mortars. In this paper, the effects of polymer additives, strength of the concrete substrate, surface roughness, surface wetness and aging on the bond between concrete substrate and repair mortar has been investigated. Full factorial experimental design is employed to investigate the main and interaction effects of these factors on the bond strength. Analysis of variance (ANOVA) under design of experiments (DOE) in Minitab 14 Statistical Software is used for the analysis. Results showed that the interaction bond strength is higher when the application surface is wet and strength of the concrete substrate is comparatively high. According to the results obtained from the analysis, the most effective repair mortar additive in terms of bonding efficiency was styrene butadiene rubber (SBR) within the investigated polymers and test conditions. This bonding ability improvement can be attributed to the self-flowing ability, high flexural strength and comparatively low air content of SBR modified repair mortars. On the other hand, styrene acrylate rubber (SAR) modified mortars was found incompatible with the concrete substrate.

Effect of Substrate-Induced Stress and Grain Size on the formation of VO2 thin films (기판에 의한 응력과 입계크기가 이산화바나듐 박막 형성에 미치는 영향 연구)

  • Koo, Hyun;Bae, Sung-Hwan;Shin, Dong-Min;Kwon, O-Jong;Park, Chan
    • Proceedings of the KIEE Conference
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    • 2009.07a
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    • pp.1279_1280
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    • 2009
  • Vanadium dioxide(VO2) has been reported to be the most attractive material for thermochromic windows due to its semiconductor-metal phase transition at around $68^{\circ}C$. However, our previous experiment showed it is difficult to grow VO2 thin films directly on glass substrate, whereas thermochromic VO2 thin films were successfully grown on R-cut sapphire substrate. Properties of VO2 thin films on different orientations of sapphire substrates were already reported. Furthermore, VO2 thin films were successfully grown heteroepitaxially on (001) preferred oriented ZnO coated glass. We deposited VO2 thin films using V2O5 targets on substrates with various lattice parameters with same orientation(SrTiO3, MgO, and Sapphire substrate of (001) orientation) by pulsed laser deposition. In this work, we will discuss the effects of lattice misfit, substrate-induced stress and grain size on the properties of VO2 thin films deposited on various substrate materials.

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Vertically Standing Graphene on Glass Substrate by PECVD

  • Ma, Yifei;Hwang, Wontae;Jang, Haegyu;Chae, Heeyeop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.232.2-232.2
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    • 2014
  • Since its discovery in 2004, graphene, a sp2-hybridized 2-Dimension carbon material, has drawn enormous attention. A variety of approaches have been attempted, such as epitaxial growth from silicon carbide, chemical reduction of graphene oxide and CVD. Among these approaches, the CVD process takes great attention due to its guarantee of high quality and large scale with high yield on various transition metals. After synthesis of graphene on metal substrate, the subsequent transfer process is needed to transfer graphene onto various target substrates, such as bubbling transfer, renewable epoxy transfer and wet etching transfer. However, those transfer processes are hard to control and inevitably induce defects to graphene film. Especially for wet etching transfer, the metal substrate is totally etched away, which is horrendous resources wasting, time consuming, and unsuitable for industry production. Thus, our group develops one-step process to directly grow graphene on glass substrate in plasma enhanced chemical vapor deposition (PECVD). Copper foil is used as catalyst to enhance the growth of graphene, as well as a temperature shield to provide relatively low temperature to glass substrate. The effect of growth time is reported that longer growth time will provide lower sheet resistance and higher VSG flakes. The VSG with conductivity of $800{\Omega}/sq$ and thickness of 270 nm grown on glass substrate can be obtained under 12 min growing time. The morphology is clearly showed by SEM image and Raman spectra that VSG film is composed of base layer of amorphous carbon and vertically arranged graphene flakes.

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Thermal Effect Modeling for AIGaN/GaN HFET on Various Substrate (AlGaN/GaN HFET의 기판에 따른 열효과 분석 모델링)

  • Park, Seung-Wook;Shin, Moo-Whan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.221-225
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    • 2001
  • In the paper, we report on the DC and Thermal effect of the GaN based HFET. A physics-based a model was applied and found to be useful for predicting the DC performance and Thermal effect of the GaN based HFET by Various substrate. The performance of device on the sapphire substrates is found to be significantly improve compared with that of a device with an sapphire substrate. The peak drain current of the device achieved at HFET on the SiC substrate

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Characteristics of ITO thin Films Grown under Various Process Condition by Using Facing Target Sputtering (FTS) System (FTS장치를 이용한 다양한 공정 조건에서 제작한 ITO 박막의 특성 분석)

  • Kim, Sangmo;Keum, Min Jong;Kim, Kyung Hwan
    • Journal of the Semiconductor & Display Technology
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    • v.16 no.1
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    • pp.112-115
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    • 2017
  • ITO thin films were grown on the glass substrate under various oxygen gas flow and substrate temperature by using FTS (Facing Target Sputtering) system. To investigate properties of as-prepared films for transparent electrical devices, we employed four-point probe, UV-VIS spectrometer, X-ray diffractometer (XRD), scanning electron microscopy (SEM), Hall Effect measurement system and Atomic Force Microscope (AFM). As a results, all of prepared samples has high transmittance of over 80 % in the visible range (300-800 nm). Their resistivity increased as a function of oxygen gas flow and substrate temperature due to their crystal structure and oxygen defect in the films. As-prepared films have a resistivity of under $10^{-4}({\Omega}-cm)$.

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Thermal Effect Modeling for AlGaN/GaN HFET on Various Substrate (AlGaN/GaN HFET의 기판에 따른 열효과 분석 모델링)

  • 박승욱;신무환
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.221-225
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    • 2001
  • In the paper, we report on the DC and Thermal effect of the GaN based HFET. A physics-based a model was applied and found to be useful for predicting the DC performance and Thermal effect of the GaN based HFET by Various substrate. The performance of device on the sapphire substrates is found to be significantly improve compared with that of a device with an sapphire substrate. The peak drain current of the device achieved at HFET on the SiC substrate

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Growth of ZnO Nanostructures on Various Substrates by Simple Aqueous Solution Method (습식화학방법에 의해 다양한 기판위에 ZnO 나노구조물의 성장)

  • Lee, Sam-Dong;Jin, Mi-Jin;Shin, Kyung-Sik;Jeong, Soon-Wook;Kim, Sang-Woo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.7
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    • pp.599-602
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    • 2008
  • Growth of well-aligned ZnO nanostructures on various substrates such as GaN, ITO/glass, and sapphire was realized via a simple aqueous solution method at low temperature of $90^{\circ}C$. Morphology of ZnO nanostructures grown on various substrates as function of substrate was studied. It was found that ZnO nanostructures is a strong function of substrate. It was clearly observed that the morphology of ZnO nanostructures could be varied by change of substrate. Morphology, crystallinity, and crystal characteristics were carried out by FE-SEM, synchrotron x-ray scattering measurements, and high-resolution electron microscopy, respectively.

Comparison of the optical properties of ZnO thin films grown on various substrates by pulsed laser deposition (기판 변화에 따른 ZHO 박막의 광학특성 연구)

  • 배상혁;이상렬
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.828-830
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    • 2000
  • Various substrates were compared for the investigation of the optical properties of ZnO thin films. ZnO thin films have been deposited on (100) p-type silicon substrates and (001) sapphire substrates by pulsed laser deposition technique using a Nd:YAG laser with the wavelength of 355 nm. Oxygen and nitrogen gases were used as ambient gases. Substrate temperatures were varied in the range of 200$^{\circ}C$ to 600$^{\circ}C$ at a fixed ambient gas pressure of 350 mTorr. ZnO films have been deposited on various substrates, such as Si and sapphire wafers. We have investigated substrate effect on the optical and structural properties of ZnO thin films using X-ray diffraction (XRD) and photoluminescence (PL).

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Study on Chucking Force and Substrate Deformation Characteristics of Electrostatic Chuck for Deposition According to Substrate Sizes (증착용 정전척의 기판 크기에 따른 척킹력 및 기판 변형 특성 연구)

  • Seong Bin Kim;Dong Kyun Min
    • Journal of the Semiconductor & Display Technology
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    • v.23 no.2
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    • pp.12-18
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    • 2024
  • A Electrostatic chuck is a device that fixes the substrate, using the force between charges applied between two parallel plates to attract substrates such as wafers or OLED panels. Unlike mechanical suction methods, which rely on physical fixation, this method utilizes the force of electrostatics for fixation, making it important to verify the adhesion force. As the size of the substrate increases, deformations due to gravity or chucking force also increase, and the adhesion force decreases rapidly as the distance between the chuck and the substrate increases. The outlook for displays is shifting from small to large OLEDs, necessitating consideration of substrate deformations. In this paper, to confirm the deformation of the substrate through various patterns, a simplified 2D model using Ansys' electromagnetic field analysis program, Maxwell, and the static structural analysis program, Mechanical, was utilized to observe changes in adhesion force according to the variation in the air gap between the substrate and the chuck. Additionally, the chucking force was analyzed for the size of the substrate, and the deformation of the substrate was confirmed when gravity and chucking force act simultaneously.

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