• 제목/요약/키워드: vapor SAM

검색결과 87건 처리시간 0.034초

Preparation of Selectively Permeable Membrane Materials with Enhanced Protective Capability against Blister Agents (수포작용제 방호성능이 향상된 선택투과막 제조)

  • Kwon, Tae-Geun;Kim, Jin-Won;Kang, Jae-Sung;Park, Hyen-Bae;Lee, Hae-Wan;Seo, Hyeon-Kwan
    • Membrane Journal
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    • 제24권2호
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    • pp.167-175
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    • 2014
  • For selectively permeable membrane based on cellulose acetate butyrate (CAB) and polyethyleneimine (PEI) with water vapor transportability and DMMP protective performance, we intended to improve protective performance of the membrane against CEES using several additives. Results showed that CAB/PEI membranes possessed performance with good water vapor permeation (${\geq}1,800g/m^2/day$) and enhanced protective capability against CEES contamination ($7.1{\sim}11.5{\mu}g/cm^2{\cdot}day$). Of these membranes, the membrane containing $Ag^+$ ion and ionic exchange resin showed the best protective performance. And, we identified that the CAB/PEI membranes show excellent protection against aerosols with various particle sizes ($0.005{\sim}3{\mu}m$) simulating biological agents.

The Effect of Growth Temperature on the Epitaxial Growth of Vertically Aligned ZnO Nanowires by Chemical Vapor Deposition

  • Im, So-Yeong;Lee, Do-Han;Jang, Sam-Seok;Kim, A-Yeong;Byeon, Dong-Jin
    • Proceedings of the Materials Research Society of Korea Conference
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    • 한국재료학회 2011년도 추계학술발표대회
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    • pp.21.1-21.1
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    • 2011
  • Vertically aligned single-crystal ZnO nanowires have been successfully grown on c-plane sapphire substrate using chemical vapor deposition (CVD) without catalyst. According to growth temperatures, it was changed ZnO growth characteristic. We investigated the effect of substrate temperatures on the growth ZnO films or nanowires on c-plane (0001) sapphire substrates. The ZnO films were acquired at $500^{\circ}C$, whereas the ZnO nanowires were obtained at $600^{\circ}C$, $700^{\circ}C$, and $800^{\circ}C$. The growth behavior diameter and growth rate of ZnO were changed due to different temperature. As a result of analyzing in-plane residual stress by X-ray diffraction, the optimized condition of ZnO nanowires were at $600^{\circ}C$.

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Phase Equilibrium of Binary Mixture for the (propylene oxide + 1-pentanol) System at Several Temperatures

  • Kim, Jeong-lae;Kim, Hakmin;Park, Su In;An, Gyu Min;Kim, Min Gi;Shin, Moon Sam
    • Korean Chemical Engineering Research
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    • 제57권1호
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    • pp.73-77
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    • 2019
  • Isothermal (vapor + liquid) equilibrium data measurements were undertaken for the binary mixtures of (propylene oxide + 1-pentanol) system at three different temperatures (303.15, 318.15, and 333.15) K. The Peng-Robinson-Stryjek-Vera equation of state (PRSV EOS) was used to correlate the experimental data. The van der Waals one-fluid mixing rule was used for the vapor phase and the Wong-Sandler mixing rule, which incorporates the non-random two liquid (NRTL) model, the universal quasi-chemical (UNIQUAC) model and the Wilson model, was used for the liquid phase. The experimental data were in good agreement with the correlation results.

Recent Trends in the Development of Organic Thin Film Transistor Including SAM Dielectric (SAM 절연체를 이용한 유기박막트랜지스터 개발의 최근 동향)

  • Kim, Sungsoo
    • Journal of Integrative Natural Science
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    • 제2권1호
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    • pp.13-17
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    • 2009
  • A newly developed OTFT manufacturing process using the combination of self-assembly techniques and vapor phase polymerization method revealed that a thick $SiO_2$ dielectric layer (100~200 nm) is not well compatible with conducting polymer electrode, thereby resulting in still recognizable contact resistance, unstable $V_{th}$ and leaking off current. A couple of very recent studies showed that this issue may be solved by replacing such inorganic dielectric with a self-assembled monolayer or multilayer (organic) dielectric. Therefore, this short review introduces recent trends in the development of high performance thin film transistor consisting of both organic semiconductor and SAM dielectric.

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Electrochemical Characterization of Anti-Corrosion Film Coated Metal Conditioner Surfaces for Tungsten CMP Applications (텅스텐 화학적-기계적 연마 공정에서 부식방지막이 증착된 금속 컨디셔너 표면의 전기화학적 특성평가)

  • Cho, Byoung-Jun;Kwon, Tae-Young;Kim, Hyuk-Min;Venkatesh, Prasanna;Park, Moon-Seok;Park, Jin-Goo
    • Journal of the Microelectronics and Packaging Society
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    • 제19권1호
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    • pp.61-66
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    • 2012
  • Chemical Mechanical Planarization (CMP) is a polishing process used in the microelectronic fabrication industries to achieve a globally planar wafer surface for the manufacturing of integrated circuits. Pad conditioning plays an important role in the CMP process to maintain a material removal rate (MRR) and its uniformity. For metal CMP process, highly acidic slurry containing strong oxidizer is being used. It would affect the conditioner surface which normally made of metal such as Nickel and its alloy. If conditioner surface is corroded, diamonds on the conditioner surface would be fallen out from the surface. Because of this phenomenon, not only life time of conditioners is decreased, but also more scratches are generated. To protect the conditioners from corrosion, thin organic film deposition on the metal surface is suggested without requiring current conditioner manufacturing process. To prepare the anti-corrosion film on metal conditioner surface, vapor SAM (self-assembled monolayer) and FC (Fluorocarbon) -CVD (SRN-504, Sorona, Korea) films were prepared on both nickel and nickel alloy surfaces. Vapor SAM method was used for SAM deposition using both Dodecanethiol (DT) and Perfluoroctyltrichloro silane (FOTS). FC films were prepared in different thickness of 10 nm, 50 nm and 100 nm on conditioner surfaces. Electrochemical analysis such as potentiodynamic polarization and impedance, and contact angle measurements were carried out to evaluate the coating characteristics. Impedance data was analyzed by an electrical equivalent circuit model. The observed contact angle is higher than 90o after thin film deposition, which confirms that the coatings deposited on the surfaces are densely packed. The results of potentiodynamic polarization and the impedance show that modified surfaces have better performance than bare metal surfaces which could be applied to increase the life time and reliability of conditioner during W CMP.

Development of High-Quality Poly(3,4-ethylenedioxythiophene) Electrode Pattern Array Using SC1 Cleaning Process (SC1 세척공정을 이용한 고품질 Poly(3,4-ethylenedioxythiophene) 전극 패턴 어레이의 개발)

  • Choi, Sangil;Kim, Wondae;Kim, Sungsoo
    • Journal of Integrative Natural Science
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    • 제4권4호
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    • pp.311-314
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    • 2011
  • Application of self-assembled monolayers (SAMs) to the fabrication of organic thin film transistor has been recently reported very often since it can help to provide ohmic contact between films as well as to form simple and effective electrode pattern. Accordingly, quality of these ultra-thin films is becoming more imperative. In this study, in order to manufacture a high quality SAM pattern, a hydrophobic alkylsilane monolayer and a hydrophilic aminosilane monolayer were selectively coated on $SiO_2$ surface through the consecutive procedures of a micro-contact printing (${\mu}CP$) and dip-coating methods under extremely dry condition. On a SAM pattern cleaned with SC1 solution immediately after ${\mu}CP$, poly(3,4-ethylenedioxythiophene) (PEDOT) source and drain electrode array were very selectively and nicely vapour phase polymerized. On the other side, on a SC1-untreated SAM pattern, PEDOT array was very poorly polymerized. It strongly suggests that the SC1 cleaning process effectively removes unwanted contaminants on SAM pattern, thereby resulting in very selective growth of PEDOT electrode pattern.

CMP 컨디셔닝 공정에서의 부식방지를 위한 자기조립 단분자막의 적용과 표면특성 평가

  • Jo, Byeong-Jun;Gwon, Tae-Yeong;Venkatesh, R. Prasanna;Kim, Hyeok-Min;Park, Jin-Gu
    • Proceedings of the Materials Research Society of Korea Conference
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    • 한국재료학회 2011년도 춘계학술발표대회
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    • pp.33.2-33.2
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    • 2011
  • CMP (Chemical-Mechanical Planarization) 공정이란 화학적 반응과 기계적 힘을 동시에 이용하여 표면을 평탄화하는 공정으로, 반도체 산업에서 회로의 고집적화와 다층구조를 형성하기 위해 CMP 공정이 도입되었으며 반도체 패턴의 미세화와 다층화에 따라 CMP 공정의 중요성은 더욱 강조되고 있다. CMP 공정은 압력, 속도 등의 공정조건과, 화학적 반응을 유도하는 슬러리, 기계적 힘을 위한 패드 등에 의해 복합적으로 영향을 받는다. CMP 공정에서, 폴리우레탄 패드는 많은 기공들을 포함한 그루브(groove)를 형성하고 있어 웨이퍼와 직접적으로 접촉을 하며 공정 중 유입된 슬러리가 효과적으로 연마를 할 수 있도록 도와주는 역할을 한다. 하지만, 공정이 진행 될수록 그루브는 손상이 되어 제 역할을 하지 못하게 된다. 패드 컨디셔닝이란 컨디셔너가 CMP 공정 중에 지속적으로 패드 표면을 연마하여 패드의 손상된 부분을 제거하고 새로운 표면을 노출시켜 패드의 상태를 일정하게 유지시키는 것을 말한다. 한편, 금속박막의 CMP 공정에 사용되는 슬러리는 금속박막과 산화반응을 하기 위하여 산화제를 포함하는데, 산화제는 금속 컨디셔너 표면을 산화시켜 부식을 야기한다. 컨디셔너의 표면부식은 반도체 수율에 직접적인 영향을 줄 수 있는 scratch 등을 발생시킬 뿐만 아니라, 컨디셔너의 수명도 저하시키게 되므로 이를 방지하기 위한 노력이 매우 중요하다. 본 연구에서는 컨디셔너 표면에 연마 잔여물 흡착을 억제하고, 슬러리와 컨디셔너 표면 간에 일어나는 표면부식을 방지하기 위하여 소수성 자기조립 단분자막(SAM: Self-assembled monolayer)을 증착하여 특성을 평가하였다. SAM은 2가지 전구체(FOTS, Dodecanethiol를 사용하여 Vapor SAM 방법으로 증착하였고, 접촉각 측정을 통하여 단분자막의 증착 여부를 평가하였다. 또한 표면부식 특성은 Potentiodynamic polarization와 Electrochemical Impedance Spectroscopy (EIS) 등의 전기화학 분석법을 사용하여 평가되었다. SAM 표면은 정접촉각 측정기(Phoenix 300, SEO)를 사용하여 $90^{\circ}$ 이상의 소수성 접촉각으로써 증착여부를 확인하였다. 또한, 표면에너지 감소로 인하여 슬러리 내의 연마입자 및 연마잔여물 흡착이 감소하는 것을 확인 하였다. Potentiodynamic polarization과 EIS의 결과 분석으로부터 SAM이 증착된 표면의 부식전위와 부식전류밀도가 감소하며, 임피던스 값이 증가하는 것을 확인하였다. 본 연구에서는 컨디셔너 표면에 SAM을 증착 하였고, CMP 공정 중 발생하는 오염물의 흡착을 감소시킴으로써 CMP 연마 효율을 증가하는 동시에 컨디셔너 금속표면의 부식을 방지함으로써 내구성이 증가될 수 있음을 확인 하였다.

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Adsorption Characteristics of Toluene Vapor According to Pore Structures of Zeolite 5A Modified with Hydrochloric Acid (산으로 개질한 Zeolite 5A의 세공구조에 따른 Toluene Vapor의 흡착특성)

  • Lee, Song-Woo;Bae, Sang-Kyu;Kwon, Jun-Ho;Na, Young-Soo;An, Chang-Doeuk;Yoon, Young-Sam;Song, Seung-Koo
    • Journal of Korean Society of Environmental Engineers
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    • 제27권8호
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    • pp.807-812
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    • 2005
  • This study is to investigate the correlation of pore structures of Zeolite 5As modified with acid and their adsorption capacity of toluene vapor using the dynamic adsorption method. The experimental results showed that the modification with acid allowed more micropores and enlarged the existing pores. Toluene vapor was mainly adsorbed on the surface of pores over $15\;{\AA}$ in diameter. The equilibrium adsorption capacity of toluene vapor of the modified Zeolite 5As was in the range of $15{\sim}70\;mg/g$ and the equilibrium adsorption capacity was increased to f times than that of the Zeolite 5A. The correlation between the total cumulative surface area and the equilibrium adsorption capacity was hard to say linear. The correlation in diameter between the cumulative surface area in the range of over $15\;{\AA}$ and the equilibrium adsorption capacity gate the highest correlation factor of 0.997.

흡착제의 세공크기분포에 따른VOCs의 흡${\cdot}$탈착특성

  • Kwon, Jun-Ho;Gu, Kyung-Ran;Gang, Jung-Hwa;Lee, Song-Woo;Na, Young-Su;An, Chang-Duk;Yoon, Young-Sam;Song, Seung-Gu
    • Proceedings of the Korean Environmental Sciences Society Conference
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    • 한국환경과학회 2005년도 추계 학술발표회 발표논문집
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    • pp.94-96
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    • 2005
  • Acetone vapor흡착에서는 활성탄의 BJH 비표면적과 탈착량을 비교했을때 10${\AA}$이하에서는 다층흡착이 일어나며 그 이상의 세공크기에서는 단층 흡착이 일어나는 것으로 판단된다. 동일한 특성을 가진 MEK vapor흡착에서도 활성탄의 BJH 비표면적과 탈착량을 비교했을때 15 ${\AA}$이하에서는 다층흡착이 일어나며 그이상의 세공크기에서는 단층 흡착이 일어나는 것으로 판단된다. 위 실험을 통해 흡착질의 크기와 흡착제의 세공크기 분포에 Knudsen diffusion의 영역을 고려하여 흡착제를 사용하는 것이 좋은 것으로 판단된다.

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