• Korean Journal of Materials Research
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• v.13 no.10
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• pp.673-676
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• 2003

We have investigated $Al_{x}$ $Ga_{l-x}$ N/GaN epilayers (x = 0.08, 0.15) grown by metal organic vapor phase epitaxy on sapphire with photoluminescence(PL), and persistent photoconductivity(PPC) experiments. An anomalous S-shaped shift behavior of temperature dependencies of PL peak energy is observed for the x = 0.15 sample. In PPC measurement, showed that the dark current recovery time of $Al_{x}$$Ga_{l-x}$ N/GaN epilayers mainly depends on the Al content. These behaviors are usually attributed to the presence of carrier localization states. All these phenomena are explained based on the alloy compositional fluctuations in the $Al_{x}$ /$Ga_{l-x}$ N/ epilayers. The photocurrent quenching observed in PPC measurements for $Al_{x}$ $Ga_{l-x}$ N/ epilayers less than 0.2 $\mu\textrm{m}$ thickness indicates that the presence of metastable state in the bandgap of GaN layer, and that the excess holes in the valence band recombine with free electrons.

• Bulletin of the Korean Chemical Society
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• v.15 no.8
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• pp.636-640
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• 1994

The nonstoichiometric perovskite solid solutions of the $Nd_{1-x}Sr_xFeO_{3-y}$ system for the compositions of x=0.00, 0.25, 0.50, 0.75, and 1.00 have been prepared at $1150^{\circ}C$ in the air pressure. The compound of x=0.00, NdFe$O_{3.0}$, contains only $Fe^{3+}$ ion in octahedral site and the others involves the mixed valence state between $Fe^{3+}$ and $Fe^{4+}$ ions. The mole ratio of $Fe^{4+}$ ion or the ${\tau}$-value increases steadily with the x-value and then is maximized at the compositionof x= 1.00. The nonstoichiometric chemical formulas of the system are formulated from the x, ${\tau}$ and y values. From the Mossbauer spectroscopy, the isomer shift of $Fe^{3+}$ ion decreases with the increasing x-value, which is induced by the electron transfer between the$Fe^{3+}$ and $Fe^{4+}$ ions. The transfer is made possible by the indirect interaction between $Fe^{3+}$ and$Fe^{4+}$ ions via the oxygen ion. The eg electrons of the$Fe^{3+}$ ions are delocalized over all the Fe ions. Due to the electron transfer, the activation energy of electrical conductivity is decrease with the increasing amount of $Fe^{4+}$ ion.

• Journal of Information Processing Systems
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• v.17 no.4
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• pp.754-771
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• 2021

In the task of continuous dimension emotion recognition, the parts that highlight the emotional expression are not the same in each mode, and the influences of different modes on the emotional state is also different. Therefore, this paper studies the fusion of the two most important modes in emotional recognition (voice and visual expression), and proposes a two-mode dual-modal emotion recognition method combined with the attention mechanism of the improved AlexNet network. After a simple preprocessing of the audio signal and the video signal, respectively, the first step is to use the prior knowledge to realize the extraction of audio characteristics. Then, facial expression features are extracted by the improved AlexNet network. Finally, the multimodal attention mechanism is used to fuse facial expression features and audio features, and the improved loss function is used to optimize the modal missing problem, so as to improve the robustness of the model and the performance of emotion recognition. The experimental results show that the concordance coefficient of the proposed model in the two dimensions of arousal and valence (concordance correlation coefficient) were 0.729 and 0.718, respectively, which are superior to several comparative algorithms.

• Bulletin of the Korean Chemical Society
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• v.11 no.4
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• pp.281-286
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• 1990

The kinetics and mechanism of reduction of Cu(II) with an excess D-penicillamine have been examined at pH = 6.2 and 0.60M in ionic strength. The reaction at the initial stage is biphasic with a rapid complexation process to give "red" transient complex of $[Cu(II)(pen)_2]^2$- that is partially reduced to another transient "brown" intermediate. The "brown" intermediate is finally reduced to diamagnetic "yellow" complex, $[Cu(I)(Hpen)]_n$. The final reduction process is pseudo-first order in ["brown" transient] disappearance $with {\kappa} = {{\kappa}_{3a} + {\kappa}_{3b}[pen]^{2-}},$ where ${\kappa}_{3a} = (5.0{\pm}0.8){\times}10^{-3}sec^{-1}$ and ${\kappa} = (0.14{\pm}0.02) M^{-1}sec^{-1}$ at $25^{\circ}C$. The activation parameters for the $[H_2pen]$-independent and $[H_2pen]$-dependent paths are ${\Delta}H^{\neq} = (52{\pm}5)kJmol^{-1},$ and ${\Delta}S^{\neq} = ( - 27{\pm}3)JK^{-1}mo^{l-1},$ and ${\Delta}H^{\neq} = (56{\pm}2)kJmol^{-1}$ and ${\Delta} S^{\neq} = ( - 18{\pm}0.7)JK^{-1}mol^{-1}$ respectively. The nature of "brown" intermediate is not clearly identified, but this intermediate seems to be in the mixed-valence state, judging from the kinetic and spectroscopic informations.

• Current Applied Physics
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• v.18 no.11
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• pp.1190-1195
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• 2018

By employing soft X-ray magnetic circular dichroism (XMCD), soft X-ray absorption spectroscopy (XAS), and photoemission spectroscopy (PES), we have investigated the electronic structure of the candidate zero-moment half-metallic $Mn_3Ga$. We have studied the ball-milled and annealed $Mn_3Ga$ powder samples that exhibit nearly zero magnetization. Mn 2p XAS revealed that Mn ions in $Mn_3Ga$ are nearly divalent for both of the Mn ions having the locally octahedral symmetry and those having the locally tetrahedral symmetry. The measured Mn 2p XMCD spectrum of $Mn_3Ga$ is very similar to that of ferrimagnetic $MnFe_2O_4$ having divalent Mn ions. The sum-rule analysis of the Mn 2p XMCD spectrum shows that both the spin and orbital magnetic moments of Mn ions in $Mn_3Ga$ are negligibly small, in agreement with the nearly compensated-ferrimagnetic ground state of $Mn_3Ga$. The valence-band PES spectrum of $Mn_3Ga$ agrees well with the calculated density of states, supporting the half-metallic electronic structure of $Mn_3Ga$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.6
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• pp.648-654
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• 2003

Diamond MIS(Metal-Insulator-Semiconductor) diodes and MISFETs(Metal-Insulator-Semiconductor Field Effect Transistors) were fabricated by employing various fluorides as gate insulator, and their electrical properties were closely investigated by means of C-V measurements. The A1/BaF$_2$/diamond MIS structure exhibited outstanding electrical properties. The MIS diode showed a very low surface state density of ∼10$\^$10//$\textrm{cm}^2$ eV near the valence band edge, and the observed effective mobility(${\mu}$$\_$eff/) of the MISFET was 400 $\textrm{cm}^2$/Vs, which is the highest value obtained until now in the diamond FET. From the chemiphysical point of view, the above result might be explained by the reduction of adsorbed-oxygen on the diamond surface via strong chemical reaction by the constituent Ba atom in the insulator during the film deposition(Oxygen-Gettering Effect).

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.619-619
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• 2013

The interfacial state between $Ta_2O_5$ and a Si substrate during the growth of $Ta_2O_5$ films by atomic layer deposition (ALD) was investigated using in-situ synchrotron radiation photoemission spectroscopy (SRPES). A newly synthesized liquid precursor Ta($N^tBu$) $(dmamp)_2Me$ was used as the metal precursor, with Ar as a purging gas and $H_2O$ as the oxidant source. After each half reaction cycle, samples were analyzed using in-situ SRPES under ultrahigh vacuum at room temperature. SRPES analysis revealed that Ta suboxide and Si dioxide were formed at the initial stages of $Ta_2O_5$ growth. However, the Ta suboxide states almostdisappeared as the ALD cycles progressed. Consequently, the $Ta^{5+}$ state, which corresponds with the stoichiometric $Ta_2O_5$, only appeared after 4.0 cycles. Additionally, tantalum silicate was not detected at the interfacial states between $Ta_2O_5$ and Si. The measured valence band offset between $Ta_2O_5$ and the Si substrate was 3.22 eV after 3.0 cycles.

• Journal of the Korean Magnetics Society
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• v.21 no.1
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• pp.37-41
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• 2011

Fe compounds of scoria samples distributed in Songdang-ri positioning north-eastern area of Jeju island were investigated by means of X-ray diffractometry (XRD) and $^{57}Fe$ M$\ddot{o}$ssbauer spectroscopy. The samples were prepared from six parasite. We found that the samples were composed of a typical olivine, pyroxene, ilmenite, $SiO_2$, anorite and anorthoclase, M$\ddot{o}$ssbauer spectrum of the most scoria samples are shown doublets and sextets of olivine, doublets of pyroxene, ilmenite and silicate minerals. And the valence states of Fe ion of the scoria samples in this area are chiefly 3+ charge state and a little 2+ charge state.

• Applied Science and Convergence Technology
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• v.23 no.5
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• pp.201-210
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• 2014

The influence of electron irradiation and hydrogen adsorption on the electronic structure of the $SrTiO_3$ (001) surface was investigated by ultraviolet photoemission spectroscopy (UPS). Upon electron irradiation of the surface, UPS revealed an electronic state within the band gap (in-gap state: IGS) with the surface kept at $1{\times}1$. This is considered to originate from oxygen vacancies at the topmost surface formed by electron-stimulated desorption of oxygen. Electron irradiation also caused a downward shift of the valence band maximum indicating downward band-bending and formation of a conductive layer on the surface. With oxygen dosage on the electron-irradiated surface, on the other hand, the IGS intensity was decreased along with upward band-bending, which points to disappearance of the conductive layer. The results indicate that electron irradiation and oxygen dosage allow us to control the surface electronic structure between semiconducting (nearly-vacancy free: NVF) and metallic (oxygen de cient: OD) regimes by changing the density of the oxygen vacancy. When the NVF surface was exposed to atomic hydrogen, in-gap states were induced along with downward band bending. The hydrogen saturation coverage was evaluated to be $3.1{\pm}0.8{\times}10^{14}cm^{-2}$ with nuclear reaction analysis. From the IGS intensity and H coverage, we argue that H is positively charged as $H^{{\sim}0:3+}$ on the NVF surface. On the OD surface, on the other hand, the IGS intensity due to oxygen vacancies was found to decrease to half the initial value with molecular hydrogen dosage. H is expected to be negatively charged as $H^-$ on the OD surface by occupying the oxygen vacancy site.

• Transactions of the Korean hydrogen and new energy society
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• v.24 no.1
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• pp.29-35
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• 2013

A dense mixed ionic and electronic conducting ceramic membrane is one of the most promising materials because it can be used for separation of oxygen from the mixture gas. The $ABO_3$ perovskite structure shows high chemical stability at high temperatures under reduction and oxidation atmospheres. $BaCo_{1-x-y}Fe_xZr_yO_{3-{\delta}}$ (BCFZ) was well-known material as high mechanical strength, low thermal conductivity and stability in the high valence state. Glycine Nitrate Process (GNP) is rapid and effective method for powder synthesis using glycine as a fuel and show higher product crystallinity compared to solid state reaction and citrate-EDTA method. BCFZ was fabricated by modified glycine nitrate process. In order to control the burn-up reaction, $NH_4NO_3$ was used as extra nitrate. According to X-Ray Diffraction (XRD) results, BCFZ was single phase regardless of Zr dopants from y=0.1 to 0.3 on B sites. The green compacts were sintered at $1200^{\circ}C$ for 2 hours. Oxygen permeability, methane partial oxidation rate and hydrogen production ability of the membranes were characterized by using Micro Gas Chromatography (Micro GC) under various condition. The high oxygen permeation flux of BCFZ 1-451 was about $1ml{\cdot}cm^{-2}s^{-1}$. Using the humidified Argon gas, BCFZ 1-433 produced hydrogen about $1ml{\cdot}cm^{-2}s^{-1}$.