• 제목/요약/키워드: vacuum pressure

검색결과 1,605건 처리시간 0.031초

액체로켓엔진 고고도 모사용 2차목 초음속 디퓨져 설계변수에 따른 특성 고찰 (Investigation of Characteristics of Second Throat Exhaust Diffuser for Simulating High-Altitude of Liquid Rocket Engine According to Design Parameter)

  • 문윤완;이은석
    • 한국추진공학회:학술대회논문집
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    • 한국추진공학회 2011년도 제37회 추계학술대회논문집
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    • pp.970-972
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    • 2011
  • 2차목 초음속 디퓨져 입구 직경에 따른 진공실 압력 변화를 고찰하였다. 디퓨져 입구는 세 종류로 변화시켰으며 각각의 경우에 대해 전산유체역학을 통해 계산을 수행하였다. 디퓨져 입구 크기에 따른 진공실의 압력 변화를 빠르게 상대비교하기 위해 비점성으로 가정한 Euler 방정식을 지배방정식으로 채택하였다. 결과로부터 디퓨져의 입구크기가 증가하면 진공실의 압력은 감소하는 것을 관찰할 수 있었다.

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Optimization analysis on collection efficiency of vacuum cleaner based on two-fluid and CFD-DEM model

  • Wang, Lian;Chu, Xihua
    • Advances in Computational Design
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    • 제5권3호
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    • pp.261-276
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    • 2020
  • The reasonable layout of vacuum cleaner can effectively improve the collection efficiency of iron filings generated in the process of steel production. Therefore, in this study, the CFD-DEM coupling model and two-fluid model are used to calculate the iron filings collection efficiency of vacuum cleaner with different inclination/cross-sectional area, pressure drop and inlet angle. The results are as follows: The CFD-DEM coupling method can truly reflect the motion mode of iron filings in pneumatic conveying. Considering the instability and the decline of the growth rate of iron filings collection efficiency caused by high pressure drop, the layout of 75° inclination is suggested, and the optimal pressure drop is 100Pa. The optimal simulation results based on two-fluid model show that when the inlet angle and pressure drop are in the range of 45°~65° and 70Pa~100Pa, larger mass flow rate of iron filings can be obtained. It is hoped that the simulation results can offer some suggestion to the layout of vacuum cleaner in the rolling mill.

진공도가 텅스텐 산화물 방막의 전기적 착색특성에 미치는 영향 (Influence of vacuum Pressure on Electrochnnc Properties of $WO_3$ Films)

  • 이길동
    • 태양에너지
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    • 제17권4호
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    • pp.67-74
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    • 1997
  • The electrochromic $WO_3$ thin films were prepared by using the electron beam deposition technique. The influences of vacuum pressure were examined in terms of the surface morphology and the electrochromic properties of films. From the results, the electrochromic behavior of electron beam deposited films strongly depends on the vacuum pressure during deposition. The film prepared under a vacuum pressure of $5{\times}10^4$ mbar was found to be rather stable when subjected to the repeated coloring and bleaching cycles in an aqueous acid electrolyte of 1M $H_2SO_4$. It was also found that the degraded film by repeated cycling in the aqueous acid solution changed the grain shape of film surface.

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KSTAR 토카막 진공용기 및 플라즈마 대향 부품의 탈기체 처리를 위한 가열 해석 (The baking analysis for vacuum vessel and plasma facing components of the KSTAR tokamak)

  • 이강희;임기학;조승연;김종배;우호길
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2000년도 추계학술대회논문집B
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    • pp.247-254
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    • 2000
  • The base pressure of vacuum vessel of the KSTAR (Korea Superconducting Tokamak Advanced Research) Tokamak is to be a ultra high vacuum, $10^{-6}{\sim}10^{-7}Pa$, to produce clean plasma with low impurity containments. For this purpose, the KSTAR vacuum vessel and plasma facing components need to be baked up to at least $250^{\circ}C,\;350^{\circ}C$ respectively, within 24 hours by hot nitrogen gas from a separate baking/cooling line system to remove impurities from the plasma-material interaction surfaces before plasma operation. Here by applying the implicit numerical method to the heat balance equations of the system, overall temperature distributions of the KSTAR vacuum vessel and plasma facing components are obtained during the whole baking process. The model for 2-dimensional baking analysis are segmented into 9 imaginary sectors corresponding to each plasma facing component and has up-down symmetry. Under the resulting combined loads including dead weight, baking gas pressure, vacuum pressure and thermal loads, thermal stresses in the vacuum vessel during bakeout are calculated by using the ANSYS code. It is found that the vacuum vessel and its supports are structurally rigid based on the thermal stress analyses.

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Vacuum Hot Pressing 조건이 $SiC_w$/2124AI 금속복합재료의 기계적 성질 및 미세구조에 미치는 영향 (Effects of Vacuum Hot Pressing Conditions on Mechanical Properties and Microstructures of $SiC_w$/2124Al Metal Matrix Composites)

  • 홍순형
    • 한국분말재료학회지
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    • 제1권2호
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    • pp.159-166
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    • 1994
  • The variation of the microstructures and the mechanical properties with varying vacuum hot pressing temperature and pressure was investigated in PyM processed 20 vol%) SiCw/ 2124Al composites. As increasing the vacuum hot pressing temperature, the aspect ratio of whiskers and density of composites increased due to the softening of 2124Al matrix with the increased amount of liquid phase. The tensile strength of composite increased with increasing vacuum hot pressing temperature up to $570^{\circ}C$ and became saturated above $570^{\circ}C$, To attain the high densification of composites above 99%, the vacuum hot pressing pressure was needed to be above 70 MPa. However, the higher vacuum hot pressing pressure above 70 MPa was not effective to increase the tensile strength due to the reduced aspect ratio of SiC whiskers from damage of whiskers during vacuum hot pressing. A phenomenological equation to predict the tensile strength of $SiC_w$/2124AI composite was proposed as a function including two microstructural parameters, i.e. density of composites and aspect ratio of whiskers. The tensile strength of $SiC_w$/2124AI were found more sensitive to the porosity than other P/M materials due to the higher stress concentration and reduced load transfer efficiency by the pores locating at whisker/matrix interfaces.

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감압대기 및 불활성가스 분위기에서 적합한 정전기 제거장치의 개발 (Development of the Most Optimized Ionizer for Reduction in the Atmospheric Pressure and Inert Gas Area)

  • 이동훈;정필훈;이수환;김상효
    • 한국안전학회지
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    • 제31권3호
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    • pp.42-46
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    • 2016
  • In LCD Display or semiconductor manufacturing processes, the anti-static technology of glass substrates and wafers becomes one of the most difficult issues which influence the yield of the semiconductor manufacturing. In order to overcome the problems of wafer surface contamination various issues such as ionization in decompressed vacuum and inactive gas(i.e. $N_2$ gas, Ar gas, etc.) environment should be considered. Soft X ray radiation is adequate in air and $O_2$ gas at atmospheric pressure while UV radiation is effective in $N_2$ gas Ar gas and at reduced pressure. At this point of view, the "vacuum ultraviolet ray ionization" is one of the most suitable methods for static elimination. The vacuum ultraviolet can be categorized according to a short wavelength whose value is from 100nm to 200nm. this is also called as an Extreme Ultraviolet. Most of these vacuum ultraviolet is absorbed in various substances including the air in the atmosphere. It is absorbed substances become to transit or expose the electrons, then the ionization is initially activated. In this study, static eliminator based on the vacuum ultraviolet ray under the above mentioned environment was tested and the results show how the ionization performance based on vacuum ultraviolet ray can be optimized. These vacuum ultraviolet ray performs better in extreme atmosphere than an ordinary atmospheric environment. Neutralization capability, therefore, shows its maximum value at $10^{-1}{\sim}10^{-3}$ Torr pressure level, and than starts degrading as pressure is gradually reduced. Neutralization capability at this peak point is higher than that at reduced pressure about $10^4$ times on the atmospheric pressure and by about $10^3$ times on the inactive gas. The introductions of these technology make it possible to perfectly overcome problems caused by static electricity and to manufacture ULSI devices and LCD with high reliability.

Neutral Beam Evolution in the KSTAR NBI Test Stand

  • In, S.R.;Shim, H.J.
    • Journal of Korean Vacuum Science & Technology
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    • 제7권1호
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    • pp.1-7
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    • 2003
  • The pressure distributions in the test stand built for developing KSTAR NBI ion sources were obtained using a network system composed of conductance elements modeling the ion source, the neutralizer, and other beam line components. The allowable regime was defined on the coordinates of the gas supply rate to the ion source and the neutralizer, considering the proper conditions of the three critical parameters, the ion source pressure for good arc discharge, the pressure integral in the neutralizer for sufficient neutralization, and the chamber pressure for minimum neutral beam loss. The neutral beam evolution along the path from the ion source extraction grid to the calorimeter through the neutralizer, the bending magnet and the vacuum chamber was estimated for typical pressure distributions.

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$RuO_2$박막의 성장과 어닐링 조건에 따른 특성 (Growth of $RuO_2$ films and chracteristics of the films with annealing conditions)

  • 조굉래;임원택;이창효
    • 한국진공학회지
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    • 제8권3B호
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    • pp.333-339
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    • 1999
  • $RuO_2$ thin films were prepared with various deposition conditions by rf magnetron sputtering. The films were annealed in vacuum, air, and air-vacuum, after that, the structural and electrical properties of the films were investigated. As the substrate temperature increases, the preferred orientation of the films changes from (101) to (200), and the grain size increases; especially, at $500^{\circ}C$, the size considerably increases. The preferred orientation of the films changes from (200) to (101) and the roughness of surface increase with the increase in oxygen partial pressure. The lowest value of resistivity of $RuO_2$ we prepared is $1.5\times 10^{-5}\Omega\codt\textrm{cm}$ at the conditions of $400^{\circ}C$ and 10% of oxygen partial pressure. After the processes of annealing, the films deposited at $400^{\circ}C$ and a oxygen partial pressure of 10% were relatively stable. The films deposited at $500^{\circ}C$ have denser structure and smoother surface when the films are annealed in vacuum after annealing in air.

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Improvement in the Setup of the Inline Sputter System and the ITO Sputtering Process by Measuring and Controlling the Base Vacuum Level

  • Ahn, Min-Hyung;Cho, Eou-Sik;Kwon, Sang-Jik
    • Journal of Information Display
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    • 제9권4호
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    • pp.15-20
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    • 2008
  • A DC-magnetron inline sputter was established, and the influence of the base pressure on the structural characteristics of the ITO thin films was studied. When the inline sputter system was established and operated for ITO sputtering, its initial vacuum level did not go below $5\times10^{-6}$ torr. The vacuum leak test was conducted by measuring t he elapsed time until the vacuum level reached $1\times10^{-6}$ torr. The base pressure was successfully maintained at $1\times10^{-6}$ torr for 900 min, and the uniformity of the ITO film that had been deposited at this pressure significantly improved.

밀폐된 소형부품의 내부압력 측정장치 개발 (Development of Inner Pressure Measurement System for Hermetic Sealed Small Components)

  • 홍승수;임인태;임종연
    • 한국진공학회지
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    • 제21권1호
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    • pp.1-5
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    • 2012
  • 밀폐된 소형부품의 내부압력을 측정하는 장치를 개발하였다. 개발된 장치에서 실험한 시료의 내부압력은 43.151 kPa이었고 국제표준화기구에서 권장한 방법에 따라 계산된 확장불확도는 741 Pa이었다. 본 연구결과로 지금까지는 전혀 측정이 불가능 했던 밀폐된 시료의 내부압력을 측정할 수 있게 되었다.