• Journal of Korean Vacuum Science & Technology
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• v.6 no.2
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• pp.97-100
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• 2002

NaEr(WO$_4$)$_2$ is a new laser material. The planar optical waveguide was formed in NaEr(WO$_4$)$_2$ crystal by 2.6 MeV He$^{+}$ ion implantation at doses of 1.0-1.5 $\times$ 10$^{16}$ ions/cm$^2$ at room temperature. The effective refractive indices of the dark modes were measured using the prism coupling method. foul n modes and five TM modes were observed in the waveguide. The refractive index profiles were analyzed using the reflectivity calculation method (RCM). The influence of heat treatment at moderate temperature on the refractive index profiles of the waveguide was also investigated. We used the TRIM'98 (Transport of ton in Matter) code to simulate the damage profile in the NaEr(WO$_4$) crystal by 2.6 MeV He$^{+}$ion implantation which is helpful for a better understanding of the waveguide formation.ion.

• 한국연소학회:학술대회논문집
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• 2004.11a
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• pp.231-237
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• 2004

Vacuum carburizing continues to gain acceptance as an alternative to atmosphere carburizing particularly in the car industry. The advantages of low-pressure carburization over atmospheric gas carburization is not only the creation of a surface entirely free of oxide and the environmentally friendly nature of these methods but also an improvement in deformation behaviour achieved by combining carburization with gas quenching, a reduction in batch times by increasing the carburization temperature, low gas and energy consumption and the prevention of soot to a large extent. In present study, an improved vacuum carburizing method is provided which is effective to deposit carbon in the surface of materials and to reduce cycle time. Also LPC process simulator was made to optimize to process controls parameters such as pulse/pause cycles of pressure pattern, temperature, carburizing time, diffusion time. The carburizing process was simulated by a diffusion calculation program, where as the model parameters are proposed with help the experimental results and allows the control of the carburizing process with good accordance to the practical results. Thus it can be concluded that LPC process control method based on the theoretical simulation and experimental datas appears to provide a reasonable tool for prototype LPC system.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.687-687
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• 2013

In rearpoint contact solar cell and the PERC (passivated emitter rear contact) type cell, surfaces were passivated by SiO2 or Al2O3 to increase solar cell efficiency. Therefore, we have investigated the effect of surface passivation for crystalline silicon solarcell using mass-production atomic layer deposited (ALD) Al2O3. The patttern which consists of cylinders with 100um diameter and 5um height was formed by PR patterning on Si (100) substrate and then Al2O3 of about 10nm and 20nm thickness was deposited by ALD. The pattern in 10 nm Al2O3 film was removed by dipping in aceton solution for about 10 min but the pattern in 20 nm Al2O3 film was not. The influences of process temperature and heat treatment were investigated using microwave photoconductance decay (PCD) and Quasi-Steady-State photoconductance (QSSPC). The solar cell process used in this work combines the advantage of using the applicability of a selective deposition associated with a ALD passivation and the use of low-cost screen print for the contacts formation.

• Journal of Powder Materials
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• v.16 no.2
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• pp.98-103
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• 2009

The ultrafine titanium carbonitride particles ($TiC_{0.7}N_{0.3}$) below 100nm in mean size were successfully synthesized by Mg-thermal reduction process. The nanostructured sub-stoichiometric titanium carbide ($TiC_{0.7}$) particles were produced by the magnesium reduction at 1123K of gaseous $TiC_{l4}+xC_2Cl_4$ and the heat treatments in vacuum were performed for five hours to remove residual magnesium and magnesium chloride mixed with $TiC_{0.7}$. And final $TiC_{0.7}N_{0.3}$ phase was obtained by nitrification under normal $N_2$ gas at 1373K for 2 hrs. The purity of produced $TiC_{0.7}N_{0.3}$ particles was above 99.3% and the oxygen contents below 0.2 wt%. We investigated in particular the effects of the temperatures in vacuum treatment on the particle refinement of final product.

• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.482-489
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• 1999

AC PDP(P1asma Display Pane1)s use the mixture of inert gases to generate a discharge inside the display pixels. Impurities such as CO, $CO_2$ and OH inside discharge region may deteriorate the characteristics of PDP operation during long life time of PDP. Electro-negative gas such as CO can cause the sustain pulse amplitude to rise by attaching electrons which will play an important role in the earlier stage of the discharge. MgO film is used to protect the dielectric layer in AC PDP, and is in contact with the free space of display pixel where it is filled with the inert gas mixture. So, MgO film can be a main source of impurities. In this experiment, we observed the change of impurity generation of various MgO films which were deposited by different methods, by using QMS. (quadropole mass spectrometer) The main impurites were $H_2$, CO and $CO_2$. And with the comparison of the TPD (temperature programmed desorption) result, it can be understood that impurity gases are generated by sputtering of MgO surface not by outgassing. Deposition method had effects on the characteristics of the impurity generation. The MgO film manufactured by e-beam evaporation generated more amount of impurity gases than the MgO films manufactured by sputtering or ion-plating. And also heat treatment of MgO film after deposition decreased the magnitude of impurity gas generation.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.3
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• pp.126-132
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• 2002

The origin of image-sticking in metal-insulator-metal type thin-film diode liquid crystal displays(TFD-LCDs) is the asymmetric current-voltage(I-V) characteristic of TFD element. We developed that TFD-LCDs have reduced-image-sticking. Tantalum pentoxide(Ta$_2$O$\sub$5/) is a candidate for use in metal-insulator-metal(MIM) capacitors in switching devices for active-matrix liquid crystal displays(AM-LCDs). High quality Ta$_2$O$\sub$5/ thin films have been obtained from anodizing method. We fabricated a TFD element using Ta$_2$O$\sub$5/ films which had perfect current-voltage symmetry characteristics. We applied novel process technologies which were postannealed whole TFD element instead of conventional annealing to the fabrication. One-Time Post-Annealing(OPTA) heat treatment process was introduced to reduce the asymmetry and shift of the I-V characteristics, respectively. OPTA means that the whole layers of lower metal, insulator, and upper metal are annealed at one time. Futhermore, in this paper, we discussed the effects of top-electrode metals and annealing conditions.

• Proceedings of the KSME Conference
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• 2001.11a
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• pp.87-92
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• 2001

In this paper, high strength pressure vessel steels having the same chemical compositions were manufactured by the two different steel-making processes, such as vacuum degassing(VD) and electro-slag remelting(ESR) methods. After the steel-making process, they were normalized at $955^{\circ}C$, quenched at $843^{\circ}C$, and finally tempered at $550^{\circ}C$ or $450^{\circ}C$, resulting in tempered martensitic microstructures with different yielding strengths depending on the tempering conditions. Low-cycle fatigue(LCF) tests, fatigue crack growth rate(FCGR) tests, and fracture toughness tests were performed to investigate the fatigue and fracture behaviors of the pressure vessel steels. In contrast to very similar monotonic, LCF, and FCGR behaviors between VD and ESR steels, a quite difference was noticed in the fracture toughness. Fracture toughness of ESR steel was higher than that of VD steel, being attributed to the removal of impurities in steel-making process.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.119.1-119.1
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• 2014

Toxic waste disposal: Many people think that when toxic waste is dumped into the ocean or into the air, it disappears. This belief is incorrect. Rather than disappearing, it accumulates over time and slowly destroys the environment. Ultimately, it leads to the destruction of human race. Plasma is environmentally friendly: Plasma is environmentally friendly because it is created and disappears. When plasma is formed on the earth, you need certain conditions such as accelerating electrons by an electrical discharge or a particle accelerator. When this is gone, plasma completely disappears, leaving no impact on the environment. Plasmas produce radicals: Even if plasma density is low at atmospheric pressure, many radicals (excited states of molecules) are created. These radicals are chemically very aggressive. So instead of using harmful chemicals, plasma can be utilized for less of an impact on the environment. Plasma can reach very high temperatures: Plasma is also useful because when you control the density, you can easily reach high temperatures up to $5000{\sim}6000^{\circ}C$ at atmosphere pressure. Because of this heat and the chemical aggressiveness of the plasma, there are many green applications for plasma technology. Pulsed power technology: Pulsed electric field for extraction, drying and killing bacteria. Treatment of biological tissue by pulsed electric fields: Extraction of substances from cells: Sterilisation, Medical applications, Growth stimulation, Food preparation. Each application has its specialities, especially with respect to pulse shape and electric field strength.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.480.1-480.1
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• 2014

In this study, we suggest the new emitter formation applied solid phase epitaxy (SPE) growth process using rapid thermal process (RTP). Preferentially, we describe the SPE growth of intrinsic a-Si thin film through RTP heat treatment by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD). Phase transition of intrinsic a-Si thin films were taken place under $600^{\circ}C$ for 5 min annealing condition measured by spectroscopic ellipsometer (SE) applied to effective medium approximation (EMA). We confirmed the SPE growth using high resolution transmission electron microscope (HR-TEM) analysis. Similarly, phase transition of P doped a-Si thin films were arisen $700^{\circ}C$ for 1 min, however, crystallinity is lower than intrinsic a-Si thin films. It is referable to the interference of the dopant. Based on this, we fabricated 16.7% solar cell to apply emitter layer formed SPE growth of P doped a-Si thin films using RTP. We considered that is a relative short process time compare to make the phosphorus emitter such as diffusion using furnace. Also, it is causing process simplification that can be omitted phosphorus silicate glass (PSG) removal and edge isolation process.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.430.1-430.1
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• 2014

According to advanced nanotechnology in the field of biomedical engineering, many studies of the interaction between topography of surfaces and cellular responses have been focused on nanostructure. In order to investigate this interaction, it is essential to make well-controlled nanostructures. Electron beam lithography (EBL) have been considered the most typical processes to fabricate and control nano-scale patterns. In this work, $TiO_2$ nanowire array was fabricated with hybrid process (top-down and bottom-up processes). Nanodot arrays were patterned on the substrate by EBL process (top-down). In order to control the spacing between nanodots, we optimized the EBL process using Poly(methyl methacrylate) (PMMA) as an electron beam resist. Metal lift-off was used to transfer the spacing-controlled nanodots as a seed pattern of $TiO_2$ nanowire array. Au or Sn nanodots which play an important role for catalyst using Vapor-Liquid-Solid (VLS) method were patterned on the substrate through the lift-off process. Then, the sample was placed in the tube furnace and heated at the synthesis temperature. After heat treatment, $TiO_2$ nanowire array was fabricated from the nanodots through VLS method (bottom-up). These results of spacing-controlled nanowire arrays will be used to study the interaction between nanostructures and cellular responses in our next steps.