• 제목/요약/키워드: vacuum deposition

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유기 분자선 증착법(OMBD)에 의한 $alpha-sexithiophene$ 박막의 제조와 특성 (The preparation of $alpha-sexithiophene$ thin films by organic molecular beam deposition method and their characteristics)

  • 권오관;김영관;손병청;박주상;변대현;신동명;최종선
    • 한국진공학회지
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    • 제7권4호
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    • pp.361-367
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    • 1998
  • 유기 박막 트렌지스터의 활성층으로 사용하기 위하여 공액성 소중합체인 $\alpha$ -sexithiophene($\alpha$-6T)이라는 시료를 가지고 유기 분자선 증착법(OMBD)을 이용하여 박막 을 제작하였으며 $\alpha$-6T박막의 성막 조건에 따른 박막의 분자 배향, 결정구조 그리고 표면 특성을 알아보기 위해 angle-resolved UV/visible absorption spectroscopy, X-ray diffractometry(XRD) 그리고 atomic force microscopy(AFM)를 이용하였으며 그 분석 결과 성막 조건에 관계없이 모두 monoclinic한 결정구조를 갖으나, 초고진공, 낮은 성막 속도, 기 판의 온도가 높은 조건일 경우 $\alpha$-6T 분자들이 기판에 수직적으로 배열한다는 것을 확일할 수 있었다.

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Investigation of Surface Morphology for Nylon 4,6 Thin Film by Molecular Layer Deposition

  • 권덕현;성명모
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.419-419
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    • 2012
  • We fabricated the Polyamide 4,6 (PA46) thin film using Adipoyl chloride and 1,4-butadiamine. PA46 film was grown at $70^{\circ}C$ by Molecular Layer Deposition (MLD) method. MLD is sequential and self-terminating fabrication method for organic thin film. The growth rate of PA46 is $3.5{\acute{\AA}}$ cycle. The thickness of PA46 film was measured by Ellipsometer. Surface morphology of this film was investigated by Atomic Force Microscopy (AFM) and roughness is directly proportional to number of growing cycles.

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Nanoscale Fluoropolymer Pattern Fabrication by Capillary Force Lithography for Selective Deposition of Copper

  • 백장미;이린;성명모
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.369-369
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    • 2012
  • The present work deals with selective deposition of copper on fluoropolymers patterned silicon (111) surfaces. The pattern of fluoropolymer was fabricated by nanoimprint lithography (NIL) and plasma reactive ion etching (RIE) was used to remove the residuals layers. Copper was electrochemically deposited in bare Si regions which were not covered with fluoropolymers. The patterns of fluoropolymers and copper have been investigated by scanning electron microscopy (SEM). In this work, we used two deposition methods. One is galvanic displacement method and another is electrodeposition. Selective deposition works in both cases and it shows applicability to other materials. By optimization of the deposition conditions can be achieved therefore this process represents a simple approach for a direct high resolution patterning of silicon surfaces.

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The Characteristics of HTM Free Perovskite Solar Cell with Gas Pressure Assisted Modified Fabrication Process

  • 조만식;장지훈;송상우;황재원;한광희;김동우;문병무
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.415.1-415.1
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    • 2016
  • 2009년도에 Perovskite가 태양전지에 처음 적용된 이후, Perovskite를 기반으로 하는 태양전지는 급속한 발전을 이루고 있으나, 향후 상용화를 위해서는 추가적인 공정개선 및 제조 단가를 낮추는 노력이 필수적이다. 초창기 Perovskite의 증착 공정은 One step deposition 방법이 사용되었으나, Layer의 thickness, uniformity 등을 조절하기 어려워 Sequential deposition 방법으로 개선되었다. 하지만 결과적으로 초기방법 대비 추가공정이 발생함에 따라 시간 및 비용의 증가가 불가피하였다. 제조단가 측면에서는 Perovskite 태양전지를 구성하는 재료 중 HTM(정공수송물질)을 구성하는 Spiro-MeOTAD의 비용이 가장 비싸다. 따라서 저비용 태양전지를 위해서는 HTM이 없는 구조가 필요하다. 이 페이퍼에서는 Perovskite 물질이 고흡광 능력 외에 충분한 전하수송능력을 보유한다는 점에 착안하여, Gas Pressure Assisted Modified One Step Deposition을 이용한 HTM Free Perovskite를 제작하고 기존의 Sequential Deposition Method 통해 만들어진 Perovskite 태양전지와 비교/분석하였다.

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Conformal Zinc Oxide Thin Film Deposition on Graphene using molecular linker by Atomic Layer Deposition

  • 박진선;한규석;조보람;성명모
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.280.2-280.2
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    • 2016
  • The graphene, a single atomic sheet of graphite, has attracted tremendous interest owing to its novel properties including high intrinsic mobility, optical transparency and flexibility. However, for more diverse application of graphene devices, it is essential to tune its transport behavior by shifting Dirac Point (DP) of graphene. So, in the following context, we suggest a method to tune structural and electronic properties of graphene using atomic layer deposition. By atomic layer deposition of zinc oxide (ZnO) on graphene using 4-mercaptophenol as linker, we can fabricate n-doped graphene. Through ${\pi}-{\pi}$ stacking between chemically inert graphene and 4-mercaptophenol, conformal deposition of ZnO on graphene was enabled. The electron mobility of graphene TFT increased more than 3 times without considerably decreasing the hole mobility, compared to the pristine graphene. Also, it has high air stability. This ZnO doping method by atomic layer deposition can be applicable to large scale array of CVD graphene TFT.

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A Nano-particle Deposition System for Ceramic and Metal Coating at Room Temperature and Low Vacuum Conditions

  • Chun, Doo-Man;Kim, Min-Hyeng;Lee, Jae-Chul;Ahn, Sung-Hoon
    • International Journal of Precision Engineering and Manufacturing
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    • 제9권1호
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    • pp.51-53
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    • 2008
  • A new nano-particle deposition system (NPDS) was developed for a ceramic and metal coating process. Nano- and micro-sized powders were sprayed through a supersonic nozzle at room temperature and low vacuum conditions to create ceramic and metal thin films on metal and polymer substrates without thermal damage. Ceramic titanium dioxide ($TiO_2$) powder was deposited on polyethylene terephthalate substrates and metal tin (Sn) powder was deposited on SUS substrates. Deposition images were obtained and the resulting chemical composition was measured using X-ray photoelectron spectroscopy. The test results demonstrated that the new NPDS provides a noble coating method for ceramic and metal materials.

Solid-Phase crystallization of amorphous silicon films deposited by plasma-enhanced chemical vapor deposition

  • Lee, Jung-Keun
    • Journal of Korean Vacuum Science & Technology
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    • 제2권1호
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    • pp.49-54
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    • 1998
  • The effect of deposition paratmeters on the solid-phase crystallization of amorphous silicon films deposited by plasma-enhanced chemical vapor deposition has been investigated by x-ray diffraction. The amorphous silicon films were prepared on Si(100) wafers using SiH4 gas with and without H2 dilution at the substrate temperatures between 12$^{\circ}C$ and 38$0^{\circ}C$. The R. F. powers and the deposition pressures were also varied. After crystallizing at $600^{\circ}C$ for 24h, the films exhibited (111), (220), and (311) x-ray diffraction peaks. The (111) peak intensity increased as the substrate temperature decreased, and the H dilution suppressed the crystallization. Increasing R.F. powers within the limits of etching level and increasing deposition pressures also have enhanced the peak intensity. The peak intensity was closely related to the deposition rate, which may be an indirect indicator of structural disorder in amorphous silicon films. Our results are consistent with the fact that an increase of the structural disorder I amorphous silicon films enhances the grain size in the crystallized films.

Low Temperature Encapsulation-Layer Fabrication of Organic-Inorganic Hybrid Thin Film by Atomic Layer Deposition-Molecular Layer Deposition

  • 김세준;김홍범;성명모
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.274-274
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    • 2013
  • We fabricate encapsulation-layer of OLED panel from organic-inorganic hybrid thin film by atomic layer deposition (ALD) molecular layer deposition (MLD) using Al2O3 as ALD process and Adipoyl Chloride (AC) and 1,4-Butanediamine as MLD process. Ellipsometry was employed to verify self-limiting reaction of MLD. Linear relationship between number of cycle and thickness was obtained. By such investigation, we found that desirable organic thin film fabrication is possible by MLD surface reaction in monolayer scale. Purging was carried out after dosing of each precursor to eliminate physically adsorbed precursor with surface. We also confirmed roughness of the organic thin film by atomic force microscopy (AFM). We deposit AC and 1,4-Butanediamine at $70^{\circ}C$ and investigated surface roughness as a function of increasing thickness of organic thin film. We confirmed precursor's functional group by IR spectrum. We calculated WVTR of organic-inorganic hybrid super-lattice epitaxial layer using Ca test. WVTR indicates super-lattice film can be possibly use as encapsulation in flexible devices.

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플라스틱 봉투 표면에서 지문을 현출하기 위한 Vacuum Metal Deposition (VMD)과 분말법의 비교 (Comparison of vacuum metal deposition (VMD) and powder method for developing latent fingerprint on plastic envelope surface)

  • 김채원;이나래;김태원;유제설
    • 분석과학
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    • 제33권3호
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    • pp.159-166
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    • 2020
  • 진공금속증착법(vacuum metal deposition, 이하 VMD)는 비다공성과 반다공성 표면의 잠재지문을 현출하는데 효과적이다. VMD는 일반적인 기법으로 현출할 수 없거나 어려운 표면에 유류된 지문을 현출하는 경우에서 활용할 수 있다. VMD 기법이 권장되는 표면은 비닐, 폴리머 지폐, 마그네틱 코팅 처리가 된 티켓 등이 있다. 본 연구에서는 택배 봉투로 주로 사용되는 분홍색 고밀도 폴리에틸렌 봉투(HDPE)와 저밀도 폴리에틸렌 봉투(LDPE)에 지문을 유류한 뒤 최소 12시간부터 최대 28일이 경과한 지문을 현출하기 위한 금의 최소 투입량을 탐색하였다. 그리고 그 결과를 흑색분말, 형광분말의 효과와 비교하였다. 또한, 실제로 배송에 사용된 택배 봉투를 수거한 다음 HDPE와 LDPE로 분류하고 pseudo-operation test를 시행하였다. 그 결과, VMD는 HDPE와 LDPE 표면에서 비교적 일관된 지문 현출 결과를 보여주었다.