• Title/Summary/Keyword: vacuum concentration

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Vacuum Pressure Treatment of Water-Soluble Melamine Resin Impregnation for Improvement of Dimensional Stability on Softwoods (목재의 치수안정성 개선을 위한 진공가압 멜라민 수지함침처리)

  • Oh, Seung-Won;Park, Hee-Jun
    • Journal of the Korean Wood Science and Technology
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    • v.43 no.3
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    • pp.327-333
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    • 2015
  • To measure the dimensional stability of three softwoods by vacuum pressurization of water soluble melamine-formaldehyde (MF) resin impregnation process, properties of resin treated compressed woods (compregs) were measured after impregnating the water soluble MF resin into three coniferous wood species for different impregnation times and resin concentrations. As the resin concentration was higher and impregnation time was longer, coefficients of volumetric shrinkage and anti-volumetric swelling efficiency increased, but coefficients of volumetric swelling, anti-volumetric swelling efficiency and absorption decreased. Also, weight percent gain increased remarkably as the resin concentration was high, but there was no uniform relationship with impregnation time.

Vacuum Distillation of Rocket Grade Hydrogen Peroxide with Temperature (온도 조건에 따른 추진제급 과산화수소의 진공 증류)

  • Chung, Seung-Mi;An, Sung-Yong;Kwon, Se-Jin
    • Proceedings of the Korean Society of Propulsion Engineers Conference
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    • 2009.11a
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    • pp.89-92
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    • 2009
  • Because many research using concentrated hydrogen peroxide as propellant is studied, research for distillation method for domestic production of rocket grade hydrogen peroxide is needed. To distill hydrogen peroxide, vacuum distillation will be used because of heat decomposition of hydrogen peroxide. Distillation pressure is 30 torr which is determined by Raoult's law to distill under $40^{\circ}C$. Variable of distillation experiment is distillation temperature. And the comparison of distillation results was done by yield and operation time. In the result, generally, yield was lower and the water in receiver had higher concentration with shorter distillation time. And with similar time, when distillation temperature was higher, yield was lower and hydrogen peroxide became higher concentration.

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Comparison on the Energy Consumption of the Vacuum Evaporation and Hydrated-Based Technologies for Concentrating Dissolved Ions (용존 이온 농축을 위한 진공 증발 기술과 하이드레이트 기반 기술의 소모 에너지 비교)

  • Han, Kunwoo;Rhee, Chang Houn;Ahn, Chi Kyu;Lee, Man Su
    • Korean Chemical Engineering Research
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    • v.57 no.3
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    • pp.378-386
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    • 2019
  • In the present paper we report the calculation results of operation energy consumption for dissolved ions concentration technologies using vacuum evaporation (VE) and hydrate formation. Calculations were conducted assuming the tenfold concentration of saline water (0.35 wt% NaCl solution) of 1 mol/s at room temperature and atmospheric pressure employing vacuum evaporation at $69^{\circ}C$ and 30 kPa and hydrate-based concentration using $CH_4$, $CO_2$ and $SF_6$ as guest molecules. Operation energy consumption of VE-based concentration resulted in 47 kJ/mol, whereas those of hydrate-based concentration were 43, 32, and 28 kJ/mol for $CH_4$, $CO_2$ and $SF_6$ hydrates, respectively. We observe that hydrate-based concentration can a competitive option for dissolved ions recovery from energy consumption standpoint. However, the selection of guest gas is very critical, since it accordingly determines the hydration number, the hydrate formation energy, gas compression energy, etc. The selection of guest gas, separation of concentrated brine and water phases, and the enhancement of hydrate formation rate are the key factors for the commercialization of hydrated-based technology for concentrating dissolved ions.

Effect of carrier concentration of ITO films on Quantum Efficiency Window in Heterojunction Silicon Solar Cells

  • Kim, Hyunsung;Kim, Sangho;Yi, Junsin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.314-314
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    • 2016
  • In this paper, the effects of carrier concentration on dielectric constant of ITO films were investigated by spectroscopic ellipsometry. From SE results, we find the pronounced shift of the ${\varepsilon}1$ peaks toward high energy with concentration; while contrarily, the ${\varepsilon}2$ values at low energy region increases with decreasing concentration. These shifts are attributed to the Burstein-Moss and free-carrier absorption effects within ITO films. With increases carrier concentration, the values of extinction coefficients show quite different behaviors in range of wavelength from 200 to 1200 nm. The reduction in k at ${\lambda}{\leq}500nm$, while increasing at ${\lambda}{\geq}500nm$ was observed. The QE of HJ solar cells behaviors can be roughly classified into two regions: short-wavelengths (${\leq}650nm$) and long-wavelengths region (${\geq}650nm$). With increasing carrier concentration as well as energy band gap, QE shows improvement at short-wavelength, while at long-wavelength QE shows opposite trend. Widening band gap energy due to Burstein-Moss shift is the key to improve QE in short-wavelength; simultaneously FCA effect due to optical scattering is attributed to the reduction in QE at long-wavelength. In spite of band gap extension, Jsc calculated from QE decreases from 34.7 mA/cm2 to 33.2 mA/cm2 with increasing carrier concentration. It demonstrated that FCA effect may more govern Jsc in the HJ solar cells.

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Phonon bottleneck effects of InAs quantum dots

  • Lee, Joo-In;Sungkyu Yu;Lee, Jae-Young m;Lee, Hyung-Gyoo
    • Journal of Korean Vacuum Science & Technology
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    • v.4 no.1
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    • pp.27-32
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    • 2000
  • We have studied the carrier relaxation of InAs/GaAs modulation-doped quantum dots depending on the excitation wavelength and modulation-doping concentration by using the time-ressolved spectroscopy. At the excitation below GaAs barrier band gap, the relaxation processes become very slow, implying to observe the phonon bottleneck effects. On the other hand, at the excitation far above GaAs band gap, phonon bottleneck effects are broken down due to Auger processes. Increasing modulation-doping concentration, the relaxation times, by virtue of Coulomb scattering between electrons in GaAs doped layer and carriers in InAs quantum dots, are observed to become fast.

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Controlling Work Function of Graphene by Chemical Doping

  • Lee, Ji-A
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.628-628
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    • 2013
  • Graphene, a single layer of graphite, has raised extensive interest in a wide scientific community for its extraordinary thermal, mechanical, electrical and other properties [1,2]. However, because of zero-band gap of graphene, it is difficult to apply for electronic applications. To overcome this problem, chemical doping is one of way to opening grahene bandgap. According to experimental results, by changing doping concentration and doping time, it is possible to control work function of graphene. We can obtain results through raman spectroscopy, UPS, Sheet resistance. Moreover, electronic properties of doped graphene were studied by making field effect transistors. We were able to control the doping concentration, dirac point of graphene and work function of graphene by formng n-type, p-type doping materials. In this research, the chemicals of diazonium salts, viologen, etc. were used for extrinsic doping.

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Investigation of field emission mechanism of undoped polycrystalline diamond films (도핑되지 않은 다결정 다이아몬드 박막의 전계방출기구 조사)

  • 심재엽;지응준;송기문;백홍구
    • Journal of the Korean Vacuum Society
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    • v.8 no.4A
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    • pp.417-424
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    • 1999
  • In order to investigate field emission mechanism of undoped polycrystalline diamond films, diamond films with different structural properties were deposited by varying positive substrate bias and/or $CH_4$ concentration. When increasing $CH_4$ concentration and positive substrate bias voltage, nondiamond carbon content in diamond films increased. Increase of nondiamond carbon content with increasing substrate voltage is ascribed to increase of substrate and excess generation of $CH_n$ radicals. Field emission properties of undoped polycrystalline diamond films ere significantly enhanced with increasing nondiamond carbon content. For diamond films with a small amount of nondiamond carbon, electrons are emitted through diamond surface while for the films with a large amount of nondiamond carbon, electron emission occurs through diamond bulk as well as surface. From this study, depending on nondiamond carbon content two field emission mechanisms were suggested.

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TCAD Simulation을 이용한 LBC Solar Cell의 Local BSF Doping Profile 최적화에 관한 연구

  • An, Si-Hyeon;Park, Cheol-Min;Kim, Seon-Bo;Jang, Ju-Yeon;Park, Hyeong-Sik;Song, Gyu-Wan;Choe, U-Jin;Choe, Jae-U;Jang, Gyeong-Su;Lee, Jun-Sin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.603-603
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    • 2012
  • 최근에 전면 emitter의 doping profile이 다른 selective emitter solar cell은 실제 제작시단파장 영역에서 많은 gain을 얻을 수 없어 LBC 구조의 태양전지에 관한 연구가 많이 진행되고 있다. 본 연구는 TCAD simulation을 이용하여 후면에 형성되는 locally doped BSF(p++) region의 doping profile의 변화에 따른 태양전지 특성에 관한 연구이다. Al으로 형성되는 local back contact의 doping depth 및 surface concentration에 따른 전기적, 광학적 분석을 통해 주도적인 인자를 분석하고 최적화하였다. 특히 doping depth에 따른 변화보다는 surface concentration의 변화에 따른 특성변화가 주도적으로 나타났다.

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Formation of Alumian gradient coatings by Ion Beam Assistant Deposition

  • Xue-Jianming
    • Journal of the Korean Vacuum Society
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    • v.7 no.s1
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    • pp.118-122
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    • 1998
  • $Al_2O_x$(0$Al_2O_3$ gradient coatings were formed by evaporating pure aluminium(99.9%) in $O_2$ environment with an IBAD facility, 12keV $Ar^+$ was used to irradiate the coatings simultaneously during the deposition. Sample's composition and depth profile were analysed by RBS and AES measurement, and their microhardness and porosity property were also measured in the experiment. Results show that, the oxygen concentration in the deposited coatings has a nearly linear relationship with the inputting gas flow before $O_2$ partial pressure in the target chamber reaches $1.2\times10^{-3}$ mbar under which stoichiometric $Al_2O_3$ could be formed; and sample's microhardness and porosity property is affected significantly by the oxygen concentration in the coatings.

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Surface Characteristics of Copper Oxide Thin Films with Different Oxygen Ratio

  • Park, Ju-Yeon;Jo, Jun-Mo;Gang, Yong-Cheol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.385-385
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    • 2010
  • Copper oxide thin films were deposited on the p-type Si(100) by r.f. magnetron sputtering as a function of different oxygen concentration. The deposited copper oxide thin films were investigated by atomic force microscopy (AFM), scanning electron microscopy (SEM), spectroscopic ellipsometry (SE), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The SEM and SE data show that the thickness of the copper oxide films was in the range of 100-400 nm. AFM images show that the surface morphology was depended on the oxygen ratio. The crystal structure of copper oxide films was changed from metallic copper to copper oxide with increasing oxygen concentration. The oxidation states of Cu 2p and O 1s resulted from XPS were consistent with XRD results.

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