• Nuclear Engineering and Technology
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• 제56권2호
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• pp.498-505
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• 2024

In this paper, a cable-driven endoscopic manipulator (CEM) is designed for the Chinese latest compact fusion reactor. The whole CEM arm is more than 3000 mm long and includes end vision tools, an endoscopic manipulator/control system, a feeding system, a drag chain system, support systems, a neutron shield door, etc. It can cover a range of ±45° of the vacuum chamber by working in a wrap-around mode, etc., to meet the need for observation at any position and angle. By placing all drive motors in the end drive box via a cable drive, cooling, and radiation protection of the entire robot can be facilitated. To address the CEM motion control problem, a discrete trajectory tracking method is proposed. By restricting each joint of the CEM to the target curve through segmental fitting, the trajectory tracking control is completed. To avoid the joint rotation angle overrun, a joint limit rotation angle optimization method is proposed based on the equivalent rod length principle. Finally, the CEM simulation system is established. The rationality of the structure design and the effectiveness of the motion control algorithm are verified by the simulation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.135-135
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• 2015

Tubes are of extreme importance in industries as for fluid channels or wave guides. Furthermore, some weapon systems such as cannons use the tubes as gun barrels. To increase the service life of such tubes, a protective coating must be applied to the tubes' inner surface. However, the coating methods applicable to the inner surface of the tubes are very limited due to the geometrical restriction. A small-diameter cylindrical magnetron sputtering gun can be used to deposit coating layers on the inner surface of the large-bore tubes. However, for small-bore tubes with the inner diameter of one inch (~25 mm), the magnetron sputtering method can hardly be accommodated due to the space limitation for permanent magnet assembly. In this study, a new approach to coat the inner surface of small-bore tubes with the inside diameter of one inch was developed. Instead of using permanent magnets for magnetron operation, an external electro-magnet assembly was adopted around the tube to confine the plasma and to sustain the discharge. The electro-magnet was operated in pulse mode to provide the strong axial magnetic field for the magnetron operation, which was synchronized with the negative high-voltage pulse applied to the water-cooled coaxial sputtering target installed inside the tube. By moving the electro-magnet assembly along the tube's axial direction, the inner surface of the tube could be uniformly coated. The inner-surface coating system in this study used the tube itself as the vacuum chamber. The SS-304 tube's inner diameter was 22 mm and the length was ~1 m. A water-cooled Cu tube (sputtering target) of the outer diameter of 12 mm was installed inside of the SS tube (substrate) at the axial position. The 50 mm-long electro-magnet assembly was fed by a current pulse of 250 A at the frequency and pulse width of 100 Hz and 100 usec, respectively. The calculated axial magnetic field strength at the center was ~0.6 Tesla. The central Cu tube was synchronously driven by a HiPIMS power supply at the same frequency of 100 Hz as the electro-magnet and the applied pulse voltage was -1200 V with a pulse width of 500 usec. At 150 mTorr of Ar pressure, the Cu deposition rate of ~10 nm/min could be obtained. In this talk, a new method to sputter coat the inner surface of small-bore tubes would be presented and discussed, which might have broad industrial and military application areas.

• 한국진공학회지
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• 제10권3호
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• pp.380-386
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• 2001

정밀가변슬릿과 자기사중극렌즈로 구성된 핵 마이크로프로브 (nuclear microprobe) 시스템을 일차행렬법을 이용한 빔광학 전산모사를 통해 설계하였으며, 제작된 시스템을 KIGAM 1.7 MV 탄뎀 반데그라프 가속기의 $30^{\circ}$ 빔라인에 설치하였다. X 및 Y축에 대한 역배율은 각각 25와 4.9로 계산되며, 3 MeV 양성자빔의 경우 최소 빔크기는 약 5 미크론, 빔전류는 약 1 nA 정도로 추산된다. PIXE, RBS, ERDA등 MeV 이온빔분석법과 이온빔 미세가공을 위해 다목적 8각형 표적함을 제작하였으며, 표적함은 X-선 및 하전입자검출기, 줌현미경, 파라데이컵, 4축 시료이송계 및 고진공계로 구성되어 있다. 현재 핵 마이크로프로브 시스템 성능 조사가 이루어지고 있으며, 자동화된 시료 이송 및 자료 처리 시스템이 설치되면 일상적인 마이크로 이온빔 분석이 가능해 질 것으로 예상된다.

• 공업화학
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• 제28권4호
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• pp.467-472
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• 2017

본 연구에서는 aquathermolysis 반응을 이용하여 감압잔사유(VR)의 개질 반응을 실시하였다. 감압잔사유는 30 bar, $300^{\circ}C$ 이상에서 24 h 동안 수증기(steam)와 반응하면, 구성성분 중에서 레진류와 아스팔텐류가 감소하고, 포화탄화수소류(saturates)나 방향족탄화수소류(aromatics)가 증가하는 경향을 보였다. 이러한 경향은 수증기(steam)량이 감압잔사유와 동일 중량부 이상으로 과량 사용 시 더 확연하였다. $300^{\circ}C$, 30 bar 이상에서 48 h 반응하는 경우 VR 조성물은 초기상태(S/A/R/A = 7.3%/43.7%/25.6%/23.5%)에서 최종상태(S/A/R/A = 6.8%/57%/12.2%/24.0%)로 레진류의 함량이 전체에서 13% 정도 감소하고 방향족화합물들은 13% 정도 증가하였다. 이때 점도는 880,000 cp에서 290,000 cp로 68% 정도 감소하였다. 수소를 제공하기 쉬운 데칼린(decalin)을 10% 첨가하는 경우 24 h에 점도가 68% 정도 감소하였고, VR 조성물은 초기상태(S/A/R/A = 7.3%/43.7%/25.6%/23.5%)에서 최종상태(S/A/R/A = 4.5%/63.5%/12.5%/20.0%)로 레진류 및 아스팔텐의 함량이 49%에서 17%가 감소하였고, 방향족 화합물의 함량이 63.5%로 극대화되었다. Aquathermolysis 반응으로 형성된 기체층을 포집하여 GC-MS spectroscopy로 분석한 결과 에틸벤젠, 옥탄, 디메틸벤젠 등 다양한 탄화수소 화합물들이 검출됨을 확인하였다.

• 한국진공학회지
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• 제16권1호
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• pp.46-51
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• 2007

포항가속기연구소의 HFMX(High Flux Macromolecular X-ray crystallography) 빔라인은 다극 위글러의 방사광을 이용한다. 따라서 고 열량부하에 적합한 두 개의 수평 및 수직 슬릿이 빔라인의 프론트엔드 영역에 설치되었다. 빔 산란을 피하면서 고 열량부하를 처리하기 위하여, 빔을 차단하는 수평 슬릿의 두 글리드콥 블록은 수직면 상에서 기울어진, $10^{\circ}$의 스침각 경사면 구조를 이루고 있다. 글리드콥 블록들은 두 개의 구동막대에 의해서 궤도대를 따라 각각 병진함으로써 슬릿의 간격을 조정한다. 구동막대 내부에 가공된 유로를 통하여 흐르는 냉각수가 두 블록의 열량부하를 냉각시킨다. 수직 슬릿은 진공용기에 대한 설치 방향과 스침각 경사면 구조의 경사각만 다를 뿐 수평 슬릿과 동일한 구조를 가지고 있다. 블록들이 궤도대 상에서 정밀하게 조정되므로 두 블록 간의 정렬이 필요치 않은 장점이 있으며 설치된 슬릿들은 안정적인 작동 성능을 보이고 있다. 또한, 두 슬릿의 냉각 성능도 만족할 만한 것으로 나타났다. 본 논문에서는 두 슬릿의 설계에 대한 상세한 설명이 제시되고 그 작동 성능을 검토한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.335-335
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• 2014

Over the past several years, transparent conducting oxides have been extensively studied in order to replace indium tin oxide (ITO). Here we report on fluorine doped zinc tin oxide (FZTO) films deposited on glass substrates by radio-frequency (RF) magnetron sputtering using a 30 wt% ZnO with 70 wt% SnO2 ceramic targets. The F-doping was carried out by introducing a mixed gas of pure Ar, CF4, and O2 forming gas into the sputtering chamber while sputtering ZTO target. Annealing temperature affects the structural, electrical and optical properties of FZTO thin films. All the as-deposited FZTO films grown at room temperature are found to be amorphous because of the immiscibility of SnO2 and ZnO. Even after the as-deposited FZTO films were annealed from $300{\sim}500^{\circ}C$, there were no significant changes. However, when the sample is annealed temperature up to $600^{\circ}C$, two distinct diffraction peaks appear in XRD spectra at $2{\Theta}=34.0^{\circ}$ and $52.02^{\circ}$, respectively, which correspond to the (101) and (211) planes of rutile phase SnO2. FZTO thin film annealed at $600^{\circ}C$ resulted in decrease of resistivity $5.47{\times}10^{-3}{\Omega}cm$, carrier concentration ~1019 cm-3, mobility~20 cm2 V-1s-1 and increase of optical band gap from 3.41 to 3.60 eV with increasing the annealing temperatures and well explained by Burstein-Moss effect. Change of work function with the annealing temperature was obtained by ultraviolet photoemission spectroscopy. The increase of annealing temperature leads to increase of work function from ${\phi}=3.80eV$ (as-deposited FZTO) to ${\phi}=4.10eV$ ($600^{\circ}C$ annealed FZTO) which are quite smaller than 4.62 eV for Al-ZnO and 4.74 eV for SnO2. Through X-ray photoelectron spectroscopy, incorporation of F atoms was found at around the binding energy of 684.28 eV in the as-deposited and annealed FZTO up to 400oC, but can't be observed in the annealed FZTO at 500oC. This result indicates that F atoms in FZTO films are loosely bound or probably located in the interstitial sites instead of substitutional sites and thus easily diffused into the vacuum from the films by thermal annealing. The optical transmittance of FZTO films was higher than 80% in all specimens and 2-3% higher than ZTO films. FZTO is a possible potential transparent conducting oxide (TCO) alternative for application in optoelectronics.

• 한국진공학회지
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• 제19권5호
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• pp.371-376
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• 2010

분자선 에피택시 장비를 이용하여 두 단계 방법(two-step method)으로 Si (100) 기판 위에 GaAs 에피층을 성장하였다. Si 기판은 초고진공을 유지하고 있는 MBE 성장 챔버 속에서 세척 방법을 달리하여 Si 기판표면에 존재하는 불순물(산소, 탄소 등)을 제거하였다. 첫 번째는 Si 기판을 몰리브덴 히터를 사용하여 $800^{\circ}C$로 직접 가열하였다. 두 번째는 Si 기판 표면에 As 빔을 조사시켜 주면서 $800^{\circ}C$로 Si 기판을 가열하였다. 세 번째는 Si 기판 표면에 Ga을 증착한 후 Si 기판을 $800^{\circ}C$로 가열하였다. 이와 같은 세 가지 다른 조건으로 세척한 Si(100) 기판 위에 성장한 GaAs 에피층의 특성은 reflection high-energy electron diffraction (RHEED), atomic force microscope (AFM), double crystal x-ray diffraction (DXRD), photoluminescence (PL), photoreflectance(PR) 등으로 조사하였다. Ga 빔을 증착하여 세척한 Si 기판 위에 성장된 GaAs 에피층의 RHEED 패턴은 ($2{\times}4$) 구조를 가지고 있었다. Ga 빔을 증착하여 세척한 Si 기판 위에 성장된 GaAs 에피층이 가장 좋은 결정성을 가지고 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.96-97
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• 2012

In nitride and oxide film deposition, sputtered metals react with nitrogen or oxygen gas in a vacuum chamber to form metal nitride or oxide films on a substrate. The physical properties of sputtered films (metals, oxides, and nitrides) are strongly influenced by magnetron plasma density during the deposition process. Typical target power densities on the magnetron during the deposition process are ~ (5-30) W/cm2, which gives a relatively low plasma density. The main challenge in reactive sputtering is the ability to generate a stable, arc free discharge at high plasma densities. Arcs occur due to formation of an insulating layer on the target surface caused by the re-deposition effect. One current method of generating an arc free discharge is to use the commercially available Pinnacle Plus+ Pulsed DC plasma generator manufactured by Advanced Energy Inc. This plasma generator uses a positive voltage pulse between negative pulses to attract electrons and discharge the target surface, thus preventing arc formation. However, this method can only generate low density plasma and therefore cannot allow full control of film properties. Also, after long runs ~ (1-3) hours, depends on duty cycle the stability of the reactive process is reduced due to increased probability of arc formation. Between 1995 and 1999, a new way of magnetron sputtering called HIPIMS (highly ionized pulse impulse magnetron sputtering) was developed. The main idea of this approach is to apply short ${\sim}(50-100){\mu}s$ high power pulses with a target power densities during the pulse between ~ (1-3) kW/cm2. These high power pulses generate high-density magnetron plasma that can significantly improve and control film properties. From the beginning, HIPIMS method has been applied to reactive sputtering processes for deposition of conductive and nonconductive films. However, commercially available HIPIMS plasma generators have not been able to create a stable, arc-free discharge in most reactive magnetron sputtering processes. HIPIMS plasma generators have been successfully used in reactive sputtering of nitrides for hard coating applications and for Al2O3 films. But until now there has been no HIPIMS data presented on reactive sputtering in cluster tools for semiconductors and MEMs applications. In this presentation, a new method of generating an arc free discharge for reactive HIPIMS using the new Cyprium plasma generator from Zpulser LLC will be introduced. Data (or evidence) will be presented showing that arc formation in reactive HIPIMS can be controlled without applying a positive voltage pulse between high power pulses. Arc-free reactive HIPIMS processes for sputtering AlN, TiO2, TiN and Si3N4 on the Applied Materials ENDURA 200 mm cluster tool will be presented. A direct comparison of the properties of films sputtered with the Advanced Energy Pinnacle Plus + plasma generator and the Zpulser Cyprium plasma generator will be presented.

• 센서학회지
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• 제10권5호
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• pp.292-303
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• 2001

본 연구에서는 수평형 전계 방출 소자를 제작하고 그 특성을 측정하였다. 이를 진공자장 센서에 이용하기 위하여 Lorentz 원리를 응용하여 센서를 설계하고 제작하였다. $POCl_3(10^{20}cm^{-3})$ 도핑된 다결정 실리콘을 전계 방출 소자의 음극 및 양극 재료로 이용하였으며 그 두께는 각각 $2\;{\mu}m$였다. PSG(두께 $2\;{\mu}m$)를 희생층으로 사용하여 최종 단계에서 불산을 이용하여 제거하고 승화건조법을 이용하여 소자의 기판 점착 현상을 방지하였다. 제작된 소자를 유리기판 #1 위에 silver paste로 고정시키고 Cr 전극 패드와 와이어본딩 한 뒤 진공내에서 양극접합공정을 이용하여 소자를 $1.0{\times}10^{-6}\;Torr$에서 진공 실장하였다. 실장 후 게터를 활성화하여 내부진공도를 향상시켰다. 이렇게 패키징된 소자는 두달여 기간 동안 특별한 특성저하 없이 잘 동작되었으며 그 이상의 기간에 대해서는 확인하지 못하였다. 패키징된 자장 센서는 패키징하기 전 진공챔버 내에서 보인 특성치와 별다른 차이 없이 잘 동작되었으며 단지 약간의 전류 감소 현상만이 관찰되었다. 측정된 센서의 감도는 약 3%/T로서 작은 값이었으나 그 가능성을 확인할 수는 있었다.

• 한국결정학회:학술대회논문집
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• 한국결정학회 2002년도 정기총회 및 추계학술연구발표회
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• pp.5-6
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• 2002

The new spectrometer for X-ray Induced Electron Emission Spectroscopy (XIEES) .has been recently developed in KRISS in collaboration with PTI (Russia). The spectrometer allows to perform research using the XAFS, SXAFS, XANES techniques (D.C.Koningsberger and R.Prins, 1988) as well as the number of techniques from XIEES field(L.A.Bakaleinikov et all, 1992). The experiments may be carried out with registration of transmitted through the sample x-rays (to investigate bulk samples) or/and total electron yield (TEY) from the sample surface that gives the high (down to several atomic mono-layers in soft x-ray region) near surface sensitivity. The combination of these methods together give the possibility to obtain a quantitative information on elemental composition, chemical state, atomic structure for powder samples and solids, including non-crystalline materials (the long range order is not required). The optical design of spectrometer is made according to Johannesson true focusing schematics and presented on the Fig.1. Five stepping motors are used to maintain the focusing condition during the photon energy scan (crystal angle, crystal position along rail, sample goniometer rail angle, sample goniometer position along rail and sample goniometer angle relatively of rail). All movements can be done independently and simultaneously that speeds up the setting of photon energy and allows the using of crystals with different Rowland radil. At present six curved crystals with different d-values and one flat synthetic multilayer are installed on revolver-type monochromator. This arrangement allows the wide range of x-rays from 100 eV up to 25 keV to be obtained. Another 4 stepping motors set exit slit width, sample angle, channeltron position and x-ray detector position. The differential pumping allows to unite vacuum chambers of spectrometer and x-ray generator avoiding the absorption of soft x-rays on Be foil of a window and in atmosphere. Another feature of vacuum system is separation of walls of vacuum chamber (which are deformed by the atmospheric pressure) from optical elements of spectrometer. This warrantees that the optical elements are precisely positioned. The detecting system of the spectrometer consists of two proportional counters, one scintillating detector and one channeltron detector. First proportional counter can be used as I/sub 0/-detector in transmission mode or by measuring the fluorescence from exit slit edge. The last installation can be used to measure the reference data (that is necessary in XANES measurements), in this case the reference sample is installed on slit knife edge. The second proportional counter measures the intensity of x-rays transmitted through the sample. The scintillating detector is used in the same way but on the air for the hard x-rays and for alignment purposes. Total electron yield from the sample is measured by channeltron. The spectrometer is fully controlled by special software that gives the high flexibility and reliability in carrying out of the experiments. Fig.2 and fig.3 present the typical XAFS spectra measured with spectrometer.