• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.898-901
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• 2005

We propose a novel pixel structure using bootstrapped voltage programming for amorphoussilicon TFT backplane of AM-OLED (Active Matrix-Organic Light Emitting Diode) displays. The proposed structure is composed of two TFTs and one capacitor. It operates at low drive voltage ($0{\sim}5V$) which can reduce power consumption comparing with the conventional pixel circuit structure using same OLED material. Also, it can easily control dark level and use commercial mobile LCD ICs. In this paper, we describe the operating principle and the characteristics of the proposed pixel structure and verify the performance by SPICE simulation comparing with the conventional pixel structure.

• E2M - 전기 전자와 첨단 소재
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• 제11권11호
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• pp.37-45
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• 1998

In this paper, present status of super high-efficiency tandem solar cells has been reviewed and key issues for realizing super high-efficiency have also been discussed. In addition, the terretrial R&D activities of tandem cells, in the New Sunshine Program of MITI(Ministry of International Trade and Industry) and NEDO(New Energy and Industrial Technology Development Organization) in Japan are reviewed briefly. The mechanical stacked 3-junction cells of monolithically grown InGaP/GaAs 2-junction cells and InGaAs cells have reached the highest efficiency achieved in Japan of 33.3% at 1-sun AM1.5. This paper also reports high-efficiency InGaP/GaAs 2-junction solar cells with a world-record efficiency of 26.9% at AM0, 28$^{\circ}C$ and radiation damage recovery phenomena of the tandem cell performance due to minority-carrier injection under light illumination or forward bias, which causes defect annealing in InGaP top cells. Future prospects for realizing super-high efficiency and low-cost tandem solar cells are also described.

• Macromolecular Research
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• 제11권4호
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• pp.273-282
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• 2003

A hydrophilic macromolecular network containing hydrophobic moieties has been prepared by free radical copolymerization of acrylamide and styrene in the presence of poly(vinyl alcohol) (PVA) and its potential as controlled drug delivery carrier was evaluated with tetracycline as a model antibiotic drug. The amount of drug was assayed spectrophotometrically. The network was characterized by optical microscopy, infra-red spectroscopy and structural parameters such as average molecular weight between cross1inks ($M_c$), cross1ink density (q) and number of elastically effective chains ($V_e$) were evaluated. It was found that with increasing concentration of PVA, ST and MBA in the hydrogel, the release rate initially increases but after definite concentrations of the above components the release rate falls. In the case of AM, release rate constantly decreases with increasing AM concentration in the hydrogel.

• 공업화학
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• 제21권2호
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• pp.137-141
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• 2010

4,7-Di-thiophen-2-yl-benzo(1,2,5)thiadiazole과 1,4-bis(dodecyloxy)-2,5-divinylbenzene을 Heck coupling 중합법을 이용하여 poly[4,7-Di-thiophen-2-yl-benzo(1,2,5)thiadiazole]-alt-1,4-bis(dodecyloxy)-2,5-divinylbenzene (PPVTBT) 공중합체를 합성하였다. 합성한 PPVTBT의 최대흡수파장과 band gap은 각각 550 nm와 1.74 eV이고 HOMO와 LUMO enegry level은 각각 -5.24 eV, -3.50 eV로 나타났다. 합성한 공중합체인 PPVTBT와 (6)-1-(3-(methoxycarbonyl)propyl)-{5}-1-phenyl[5,6]-$C_{61}$(PCBM)을 1 : 6의 중량비로 blend하여 제작한 소자의 효율은 AM 1.5 G, 1 sun 조건($100mA/cm^{2}$)에서 0.16%의 효율을 보였다. 그리고 소자의 Jsc (short circuit current), FF (fill factor)와 Voc (open circuit voltage)는 각각 $0.74mA/cm^{2}$, 31%, 0.71 V로 나타났다.

• 한국진공학회지
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• 제22권1호
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• pp.37-44
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• 2013

본 연구에서는 양자점(quantum dot, QD)에서의 전하트랩이 태양전지의 특성에 미치는 영향을 조사하기 위하여, GaAs 모체 태양전지(MSC)의 활성층에 InAs/GaAs QD을 삽입한 $p^+-QD-n/n^+$ 태양전지(QSC)를 제작하여 그 특성을 비교 조사하였다. Stranski-Krastanow (SK)와 준단층(quasi-monolayer, QML)의 2종류 QD를 도입하였으며, 표준 태양광(AM1.5)에서 얻은 전류-전압 곡선으로부터 태양전지의 특성인자(개방전압($V_{OC}$), 단락전류($I_{SC}$), 충만도(FF), 변환효율(CE))를 결정하였다. SK-QSC의 FF값은 80.0%로 MSC의 값(80.3%)과 비슷한 반면, $V_{OC}$와 $J_{SC}$는 각각 0.03 V와 $2.6mA/cm^2$만큼 감소하였다. $V_{OC}$ 및 $J_{SC}$ 감소 결과로 CE는 2.6% 저하되었는데, QD에 의한 전하트랩이 주요 원인으로 지적되었다. 전하트랩을 완화시키기 위한 구조로서 QML-QD 기반 태양전지를 본 연구에서 처음 시도하였으나, 예측과는 달리 부정적 결과를 보였다.

• 한국결정학회지
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• 제1권2호
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• pp.99-104
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• 1990

본 연구에서는 고밀도 광원 활용에 의한 유기금속화합물의 광분해 반응을 이용하여 AmBv 형광 전재료의 Hetero-epitaxy를 고찰하였다. 실제로 ArF Excimer laser(파장 193nm)에 의 하여 III족원으로 trlmethylgallium과 V족원으로 Ammonia의 2분자간 광분해 반응을 이용, (001)면 Sapphire 기판상에 증착시켰다. 생성되는 성막상태는 주사식 전자현미경, X-ray 회절 및 전자선 회절법 (RED)에 의하여 평가하였다. Laser광려기 유무에 따라 결정병합 상태 및 결정형태에 현저한 차이를 관찰할 수 있었으며, 특히 결정격자의 방위성에 큰 영향을 주고 있음이 주목되었다. 광원 조사방법은 수직조사에 의한 기판면 여기보다는 수평조사에 의 한 기상 반응물 여기가 더 효과적 이였다. Laser 광여기에 의한 성막층의 격자형성은 다음 과 같은 2가지 Model중 하나로 설명 할 수 있었다. (001)면 Sapphire//wurzite형 GaN의 (001) 면 또는 (001)면 Sapphire//wurzite형 GaN인의 (001) 면 -t Twinned Zincblende형의 GaN(111)면

• 동의생리병리학회지
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• 제20권3호
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• pp.735-739
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• 2006

The purpose of this case is to report the improvement after treatment about a patient with cerebral infarction by Sa-Am's Ohaeng-acupuncture and Liuqi-acupuncture. We treated the patient with acupuncture therapy from 6th September 2004 to 15th November 2004 Dy reinforcing Dadun(LR 1)Zusan Li(5736) Quchi(Li 11) and reducing Taibai(Sp 3) on the basis of etiological analysis and differentiation of endogenous wind caused by damp phlegm and heat. Right hemiplegia improved Gr. 1 to Gr. tV after acupuncture therapy. We interpreted 'reinforcing Dadun(LR 1) and reducing TaiDai(SP 3)'as using Simjeonggyeok in conjunction with Simseunggyeok on the basis of Sa-Am's Ohaeng-acupuncture. We interpreted 'reinforcing Dadun(LR 1) and reducing Taibai(Sp 3)' as excreting dampness in Spleen on the basis of Liuqi-acupuncture. We interpreted 'reinforcing Zusan Li(57 36) and Quchi(Li 11)' as eliminating wind-dampness and menstrual regulation.

• 대한소아치과학회지
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• 제25권2호
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• pp.323-334
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• 1998

The purpose of this study was to compare the microleakage of the amalgam and the gallium alloy when several lining materials were applied. The ANA 2000, high copper lathecut type amalgam(AM group) and Gallium Alloy GF II (GF group) were used. The fifty extracted sound molars were randomly assigned to AM group and GF group, and the buccal and lingual class V cavities with a size $3{\times}2{\times}2mm$ were prepared. The prepared cavities were randomly assigned to group 1 : no liner used control, group 2 : Copalite, group 3 : Panavia 21, group 4 : All-bond 2, and group 5 : Superbond C&B. After liner placement and amalgam filling, the specimens were stored in $37^{\circ}C$ normal saline for 24 hours and then thermocycled from $5^{\circ}C$ to $55^{\circ}C$ thousand times. The specimens were stored in the 1% methylene blue solution for 24 hours and sectioned and examined by stereomicroscope. The results obtained from this study can be summarized as follows : 1. In the GF group, microleakage values of group 2, 3, 4, 5 were significantly lower than that of group 1 (p<0.05). 2. In the AM group, microleakage values of group 3 and 4 were significantly lower than that of group 1 (p<0.05), but microleakage values of group 2 and 5 did not differ from that of group 1 (p>0.05). 3. The GF group was similar(group, 1 3, 4) or superior(group 2, 5) to the AM group in the aspect of the microleakage.

• 한국구조물진단유지관리공학회 논문집
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• 제23권3호
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• pp.111-118
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• 2019

본 연구에서는 비정질강섬유의 혼입이 초고강도콘크리트의 폭렬특성에 미치는 영향이 실험적으로 검토되었다. 콘크리트는 압축강도 100과 150 MPa의 초고강도콘크리트가 사용되었다. 폴리프로필렌섬유는 0.15 vol%, 비정질강섬유는 0.3 및 0.5 vol%가 혼입되었다. 시험체는 콘크리트의 압축강도와 섬유혼입 조건에 따라 6수준이 제작되었고, ISO-834 가열곡선에 의해 가열되었다. 결과로써 폴리프로필렌섬유와 비정질강섬유가 혼입된 초고강도콘크리트의 폭렬제어에 있어서는 용융된 폴리프로필렌섬유가 형성하는 공극네트워크를 통해 수증기가 이동하는 효과가 지배적인 것으로 나타났다. 또한, 비정질강섬유 0.3v ol% 혼입률에서는 폭렬제어에 큰 영향을 미치지 않지만, 0.5 vol%의 비정질강섬유가 혼입될 경우에는 수증기가 이동할 수 있는 균열의 발생이 억제됨으로써 콘크리트 폭렬의 원인으로 지적되고 있는 수분막힘층(moisture clog)가 형성될 가능성이 높은 것을 확인할 수 있었다.

• Applied Microscopy
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• 제47권3호
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• pp.105-109
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• 2017

The effect of temperature and vanadium metal concentration on the electronic and thermoelectric properties of Si in the diamond cubic structure has been investigated using a combination of density functional theory simulations and the semi classical Boltzmann's theory. The BotzTrap code within the constant relaxation time approximation has been used to obtain the Seebeck coefficient and other transport properties of interest for alloys of the structure $Si_{1-x}V_x$, where x is 0, 0.125, 0.25, 0.375, and 0.5. The thermoelectric properties have been extracted for a temperature range of 300 K to 1,000 K. The general trend with V atom substitution for Si causes the Seeback coefficient to increase and the thermal conductivity to decrease for the various alloys. The optimum values are for $Si_5V_3$ and $Si_4V_4$ alloys for charge carrier concentrations of $10^{21}cm^{-3}$ in the mid temperature range of 500~800 K. This is a very desirable effect for a promising thermoelectric and the figure of merit ZT approaches 0.2 at 600 K for the p-type $Si_5V_3$ alloy.