• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.898-901
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• 2005

We propose a novel pixel structure using bootstrapped voltage programming for amorphoussilicon TFT backplane of AM-OLED (Active Matrix-Organic Light Emitting Diode) displays. The proposed structure is composed of two TFTs and one capacitor. It operates at low drive voltage ($0{\sim}5V$) which can reduce power consumption comparing with the conventional pixel circuit structure using same OLED material. Also, it can easily control dark level and use commercial mobile LCD ICs. In this paper, we describe the operating principle and the characteristics of the proposed pixel structure and verify the performance by SPICE simulation comparing with the conventional pixel structure.

• Electrical & Electronic Materials
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• v.11 no.11
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• pp.37-45
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• 1998

In this paper, present status of super high-efficiency tandem solar cells has been reviewed and key issues for realizing super high-efficiency have also been discussed. In addition, the terretrial R&D activities of tandem cells, in the New Sunshine Program of MITI(Ministry of International Trade and Industry) and NEDO(New Energy and Industrial Technology Development Organization) in Japan are reviewed briefly. The mechanical stacked 3-junction cells of monolithically grown InGaP/GaAs 2-junction cells and InGaAs cells have reached the highest efficiency achieved in Japan of 33.3% at 1-sun AM1.5. This paper also reports high-efficiency InGaP/GaAs 2-junction solar cells with a world-record efficiency of 26.9% at AM0, 28$^{\circ}C$ and radiation damage recovery phenomena of the tandem cell performance due to minority-carrier injection under light illumination or forward bias, which causes defect annealing in InGaP top cells. Future prospects for realizing super-high efficiency and low-cost tandem solar cells are also described.

• Macromolecular Research
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• v.11 no.4
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• pp.273-282
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• 2003

A hydrophilic macromolecular network containing hydrophobic moieties has been prepared by free radical copolymerization of acrylamide and styrene in the presence of poly(vinyl alcohol) (PVA) and its potential as controlled drug delivery carrier was evaluated with tetracycline as a model antibiotic drug. The amount of drug was assayed spectrophotometrically. The network was characterized by optical microscopy, infra-red spectroscopy and structural parameters such as average molecular weight between cross1inks ($M_c$), cross1ink density (q) and number of elastically effective chains ($V_e$) were evaluated. It was found that with increasing concentration of PVA, ST and MBA in the hydrogel, the release rate initially increases but after definite concentrations of the above components the release rate falls. In the case of AM, release rate constantly decreases with increasing AM concentration in the hydrogel.

• Applied Chemistry for Engineering
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• v.21 no.2
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• pp.137-141
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• 2010

Poly [4,7-Di-thiophen-2-yl-benzo(1,2,5)thiadiazole]-alt-1,4-bis(dodecyloxy)-2,5-divinylbenzene (PPVTBT) was synthesized by the Heck coupling reaction between 4,7-Di-thiophen-2-yl-benzo(1,2,5)thiadiazole and 1,4-bis(dodecyloxy)-2,5-divinylbenzene. The maximum absorption and band gap of PPVTBT were 550 nm and 1.74 eV, respectively. The HOMO and LUMO energy level of PPVTBT were -5.24 eV and -3.50 eV, respectively. The photovoltaic device based on the blend of PPVTBT and (6)-1-(3-(methoxycarbonyl)propyl)-{5}-1-phenyl[5,6]-$C_{61}$ (PCBM) (1 : 6 by weight ratio) was fabricated. The efficiency of device was 0.16%. The short circuit current density (Jsc), fill factor (FF) and open-circuit voltage (Voc) of the device was $0.74mA/cm^{2}$, 31% and 0.71 V, respectively, under AM 1.5 G and 1 sun condition ($100mA/cm^{2}$).

• Journal of the Korean Vacuum Society
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• v.22 no.1
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• pp.37-44
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• 2013

In order to investigate an influence of carrier trap by quantum dots (QDs) on the solar parameters, in this study, the $p^+-QD-n/n^+$ solar cells with InAs/GaAs QD active layers are fabricated, and their characteristics are investigated and compared with those of a GaAs matrix solar cell (MSC). Two different types of QD structures, the Stranski-Krastanow (SK) QD and the quasi-monolayer (QML) QD, have been introduced for the QD solar cells, and the parameters (open-circuit voltage ($V_{OC}$), short-cirucuit current ($I_{SC}$), fill factor (FF), conversion efficiency (CE)) are determined from the current-voltage characteristic curves under a standard solar illumination (AM1.5). In SK-QSC, while FF of 80.0% is similar to that of MSC (80.3%), $V_{OC}$ and $J_{SC}$ are reduced by 0.03 V and $2.6mA/cm^2$, respectively. CE is lowered by 2.6% as results of reduced $V_{OC}$ and $J_{SC}$, which is due to a carrier trap into QDs. Though another alternative structure of QML-QD to be expected to relieve the carrier trap have been firstly tried for QSC in this study, it shows negative results contrary to our expectations.

• Korean Journal of Crystallography
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• v.1 no.2
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• pp.99-104
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• 1990

The hetero-epitaxial growth of AmB v type onto-electronic material is attempted by means of the laser-induced chemical vapour deposition technique. The bimolecular gas phase reaction of trimethylgallium with ammonia on (001) alumina substrate for the epitaxy of gallium nitride is chosen as a model system. In this study, ArF exciter laser (193nm) is employed as a photon source. Marked difference is found in nucleation and in subsequent crystal incorporation between the doposits formed with and without the laser-irradiation. The surface coverage with isomorphically grown drystallites is pronounced upon "volume-excited" irradiation in comparison with the conventional thermal process. As to the crystal structure of the grown layers, the laser-induced deposits of GaN may be represented by either of the following two models: (001) plane of sapphire //y (001) plane of wurtzite-type GaN, OR (001) plane of sapphire//(001) plane of wurtzite-type-GaN (111) plane of twinned zinc blende-type GaN.

• Journal of Physiology & Pathology in Korean Medicine
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• v.20 no.3
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• pp.735-739
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• 2006

The purpose of this case is to report the improvement after treatment about a patient with cerebral infarction by Sa-Am's Ohaeng-acupuncture and Liuqi-acupuncture. We treated the patient with acupuncture therapy from 6th September 2004 to 15th November 2004 Dy reinforcing Dadun(LR 1)Zusan Li(5736) Quchi(Li 11) and reducing Taibai(Sp 3) on the basis of etiological analysis and differentiation of endogenous wind caused by damp phlegm and heat. Right hemiplegia improved Gr. 1 to Gr. tV after acupuncture therapy. We interpreted 'reinforcing Dadun(LR 1) and reducing TaiDai(SP 3)'as using Simjeonggyeok in conjunction with Simseunggyeok on the basis of Sa-Am's Ohaeng-acupuncture. We interpreted 'reinforcing Dadun(LR 1) and reducing Taibai(Sp 3)' as excreting dampness in Spleen on the basis of Liuqi-acupuncture. We interpreted 'reinforcing Zusan Li(57 36) and Quchi(Li 11)' as eliminating wind-dampness and menstrual regulation.

• Journal of the korean academy of Pediatric Dentistry
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• v.25 no.2
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• pp.323-334
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• 1998

The purpose of this study was to compare the microleakage of the amalgam and the gallium alloy when several lining materials were applied. The ANA 2000, high copper lathecut type amalgam(AM group) and Gallium Alloy GF II (GF group) were used. The fifty extracted sound molars were randomly assigned to AM group and GF group, and the buccal and lingual class V cavities with a size $3{\times}2{\times}2mm$ were prepared. The prepared cavities were randomly assigned to group 1 : no liner used control, group 2 : Copalite, group 3 : Panavia 21, group 4 : All-bond 2, and group 5 : Superbond C&B. After liner placement and amalgam filling, the specimens were stored in $37^{\circ}C$ normal saline for 24 hours and then thermocycled from $5^{\circ}C$ to $55^{\circ}C$ thousand times. The specimens were stored in the 1% methylene blue solution for 24 hours and sectioned and examined by stereomicroscope. The results obtained from this study can be summarized as follows : 1. In the GF group, microleakage values of group 2, 3, 4, 5 were significantly lower than that of group 1 (p<0.05). 2. In the AM group, microleakage values of group 3 and 4 were significantly lower than that of group 1 (p<0.05), but microleakage values of group 2 and 5 did not differ from that of group 1 (p>0.05). 3. The GF group was similar(group, 1 3, 4) or superior(group 2, 5) to the AM group in the aspect of the microleakage.

• Journal of the Korea institute for structural maintenance and inspection
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• v.23 no.3
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• pp.111-118
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• 2019

This study examined the effect of amorphous metallic (AM) fibers on the spalling properties of ultra high strength concrete. Six specimens with concrete strengths of 100 MPa and 150 MPa were evaluated with mix proportions of polypropylene (PP) fibers of 0.15% by concrete volume, and proportions of AM fibers of 0.3% and 0.5% by concrete volume. These specimens were then heated in accordance with the ISO-834 heating curve. The movement of water vapor through a pore network formed by molten PP fibers was found to be a dominant factor controlling the spalling of high-strength concrete. Spalling control was not found to be significantly affected by the addition of 0.3% AM fibers; however, when 0.5% AM fibers was added, cracking was limited and so were paths for water vapor migration, increasing the likelihood of a moisture clog and creating the differential internal pressure often blamed for concrete spalling.

• Applied Microscopy
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• v.47 no.3
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• pp.105-109
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• 2017

The effect of temperature and vanadium metal concentration on the electronic and thermoelectric properties of Si in the diamond cubic structure has been investigated using a combination of density functional theory simulations and the semi classical Boltzmann's theory. The BotzTrap code within the constant relaxation time approximation has been used to obtain the Seebeck coefficient and other transport properties of interest for alloys of the structure $Si_{1-x}V_x$, where x is 0, 0.125, 0.25, 0.375, and 0.5. The thermoelectric properties have been extracted for a temperature range of 300 K to 1,000 K. The general trend with V atom substitution for Si causes the Seeback coefficient to increase and the thermal conductivity to decrease for the various alloys. The optimum values are for $Si_5V_3$ and $Si_4V_4$ alloys for charge carrier concentrations of $10^{21}cm^{-3}$ in the mid temperature range of 500~800 K. This is a very desirable effect for a promising thermoelectric and the figure of merit ZT approaches 0.2 at 600 K for the p-type $Si_5V_3$ alloy.