• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.235-238
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• 2006

Interface formation between $12CaO{\cdot}7Al_2O_3(C12A7:e^-)$ and Alq3 was investigated using in-situ ultra-violet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS). The work function and vacuum level shift of $C12A7:e^-$ were change by different surface treatment from 2.6eV to 4.2eV. Also vacuum level shift $(\Delta)$ at the interface were from +0.3eV to -0.3eV.

• Journal of Magnetics
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• v.20 no.3
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• pp.221-228
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• 2015

Colloidal particles consisted of individual nanosized magnetite grains on the surface of the silica cores were obtained by two-stage sol-gel technique. Size distribution and microstructure of the particles were analyzed using atomic force microscopy, X-ray diffraction and Nitrogen thermal desorption. Magnetic properties of the particles were studied by the method of the longitudinal nonlinear response. It has been shown that nanoparticles of magnetite have a size corresponding to a superparamagnetic state but exhibit hysteresis properties. The phenomenon was explained using the magnetostatic interaction model based on the hypothesis of iron oxide particles cluster aggregation on the silica surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.397-400
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• 1996

We investigated electric and dielectric properties of MIM device using Maleate Copolymer LB films. The thickness of maleate copolymer LB film by ellipsometry measurements and X-ray diffraction pattern was about 27~30[ ]. The maleate copolymer 13 film have the property of insulator like organic ultra-thin film. The electric conduction was Schottky current measured by I-V characteristics, and the conductivity was 10$^{-15}$ ~10$^{-14}$ [S/cm]. Dielectric constant was about 5.0~6.0 by various measurement: I-V, frequency-depenent dielectric properties. Schottky barrier was about 0.9 ~1.0(eV). By relation between log I and 1/T, activation energy baa 0.74(eV). Frequency-depenent dielectric properties wart orientational polarization by the dipole.

• Journal of the Mineralogical Society of Korea
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• v.11 no.2
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• pp.97-105
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• 1998

Weathering of biotite in Palgonsan granite was studied by using X-ray diffraction, optical microscopy, scanning electron microscopy, and electron probe micro analysis. Biotite altered to biotite/vermiculite regular mixed layer mineral (B/V) in the early stage of weathering. Although partially replaced by kaolinite with the progress of weathering. B/V is the major weathering product of biotite throughout the profile. During the formation of B/V, Mg, Fe and K are removed from a biotite layer to form a vermiculite layer by about 28%, 44% and 88%, respectively, whereas the Ti content is not changed. Considerable volume increase after the kaolinitization of B/V suggests that Al and Si are largely introduced from the external weathering solution. The silicate lattice templet of a weathering biotite facilitated the nucleation and growth of kaolinite. In the Palgongsan granite weathering profile, plagioclase weathered mostly into halloysite whereas biotite greatly contributes to the kaolinite crystallization though its small content in fresh rock.

• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.5
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• pp.706-711
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• 1986

The AgGa1-xInxSe2 films are deposited by a flash evaporation method onto pyrex glass substrates at temperatures between 5\ulcorner and 360\ulcorner. The single crystalline films which have X-ray diffraction peak of only (112) plane are preared at substrate temperature above 360\ulcorner. The prepared AgGa 1-xInxSe2 films are high photosensitive. The temperature coefficients of energy gap are found to be (-1.2~-4.0)x10**4 eV/K and (-3.1~-5.2)x10**-4 eV/K, and that of peak energy of spectral photoresponse curve are found to be (-1.1 ~ -3.0)x10**-4 eV/K(50K~100K) and (-2.4~-5.1)x10**-4 eV/K(100K~300K).

• Advances in materials Research
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• v.13 no.3
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• pp.195-202
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• 2024

Aluminum alloy is a material that is frequently used in the aerospace and transportation industries due to its high mechanical and corrosion resistance qualities. Unfortunately, aluminum alloys are prone to corrosion, limiting their application in some harsh situations such as when submerged in aqueous environments. The purpose of this study is to investigate how anodizing can increase the corrosion resistance of 6061 Aluminum alloy. The anodizing process was carried out using two different parameters which are voltage (5V, 10V, 15V) and electrolyte sulfuric acid (H₂SO₄) concentration (0.3M, 0.5M) for 1 hour. The anodized samples were performed using several analyses such as X-ray diffraction (XRD) analysis, morphology analysis, and corrosion test. From this study, it is found that the difference in anodizing parameters affects the corrosion resistance of the samples. Sample anodized at 15V, 0.5M gives the best corrosion resistance.

• Korean Journal of Materials Research
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• v.7 no.2
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• pp.107-113
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• 1997

$SrBi_{2}Ta_{2}O_{9}(SBT)$ thin films wcre prepared on $Pt/Ti/SiO_{2}/Si$ suhsrrate by pL~snia-enhanced chemical vapor deposition. Sr and Ta huhhling temperatures were kept ,it $120^{\circ}C$ Iron1 X- ray tiiffriict!on. n~icrostruc~ure. and composjrional analysis of SH7' films, respectivels Hi I~ut~t~lmg tempcl.arure was varied SR'I' thin tilrns dcpositcd ar i3i buhbling temperature of $130^{\circ}C$ have dielccrric constanr of 150 anti dissipation factor of 0 02 at IOOkFic. I .eakagc wrrent density of films was ahour $1.0{\times}10^{-8}A/cm^2$ at 20kV/cm. 1.eakage current i11amcrc1istic.s of Sli'l' films nras c.ontrolled by I'oole Frcnkel emission Kenianent polariziit~on and mercivc field oi SR\ulcorner' films annealed at $550^{\circ}C$ were $9{\mu}C/cm^2$ and 70kV/cm, respectively.

• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.315-326
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• 1996

The electronic structures of 3d and 4d core-levels of rare-earth atoms in the insulating rare-earth (Sm, Eu, Gd, and Tb) compounds were studied with x-ray photoelectron spectroscopy(XPS). It is shown that the intrinsic satellite structure due to the hybridization disappears for chemically stable-earth trivalent heavy rare-earth insulating compounds as the hybridization between f electrons of rare-earth atoms and p electrons of anion atoms decreases due to the lanthanide contraction. Eu atoms at the surface of the stable insulating trivalent Eu compounds are found to be divalent. The satellite peak of Eu 3d core-level spectra at about 10eV higher binding energy side relative the main peak comes from the multiplet structures of $\underline{3d}4f^6$ configuration. The satellite structure appearing at about 15 eV higher binding energy side relative to the main peak in all insulating rare-earth compounds is due to an energy loss process of creating a plasmon.

• Journal of the Korean Vacuum Society
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• v.6 no.4
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• pp.337-342
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• 1997

We have investigated Mossbauer effect and emission properties of the Fe-doped GaAs grown by liquid phase epitaxy (LPE). The powder type of isotope $^{57}Fe$ was used as a dopant source in LPE-GaAs. From the analysis of Mossbauer effect the value of isomer shift, 0.303$\pm$0.018 mm/sec, is calculated at low temperature. This means that charge state of Fe ion in GaAs is 3+. The results of double crystal x-ray rocking curve (DCRC) and low temperature photoluminescence (PL) show the crystal quality of the epitaxial layers are good. Unusual luminescence peaks from the Fe-GaAs epitaxial layers appeared at emission energy of 0.99 eV and 1.15 eV. We attribute these emissions to Fe-acceptor related two deep radiative centers.

• Korean Journal of Materials Research
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• v.9 no.8
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• pp.782-786
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• 1999

CdS thin films prepared by vaccum evaperation have been studied the characteristcs of room temperature of scanning electron microscoe(SEM), X-ray diffraction(XRD), energy dispersive X-ray(EDX), and photoluminescence(PL)spectra. The cubic to hexagonal structure phase transitin has been determined to be $350^{\circ}C~450^{\circ}C$. The results of compensated donor levels of $O_2$and Si impurites at S-vacancy were identified CdO and $Cd_2SiO_4$defects. The edge emission peaks measured by PL of room temperature was donor level accoding the theses $O_2$and Si impurites were due to 2.43eV($350^{\circ}C$) and 2.42eV(55$0^{\circ}C$) peak energies respectively. The structure transition annealing temperature was measured $370^{\circ}C$ similar to Ariza-Calderons result, $374^{\circ}C$ by CBD films.