• 방송공학회논문지
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• 제16권5호
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• pp.797-800
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• 2011

MPEG에서 진행 중인 MPEG Media Transport(MMT) 표준화는 IP기반 방송통신융합망에서 효과적인 멀티미디어 전송을 목적으로 하고 있다. 본 고에서는 MMT 제안 기술로서, 유선망에 비해 채널의 변화가 많은 무선망에서 효과적인 멀티미디어 전송을 위해 제안된 크로스레이어 디자인(Cross Layer Design-CLD)에서의 신호세기(signal strength information) 활용 방법을 소개한다. 무선환경에서 신호세기를 활용하면 매우 효율적인 멀티미디어 전송이 가능함은 관련 연구 논문[1]-[5]을 통해 증명되었다. 하지만, 무선채널의 특성상 서로 다른 신호세기의 범위를 사용함으로써 신호세기 정보의 유용성에도 불구하고 레이트 어댑테이션 애플리케이션에서 활용하는데 제한이 있어왔다. 따라서 본 논문에서는 MMT 표준화 기술 기고로 제안된 무선채널 신호세기 정보의 범위를 표준화된 형식으로 활용하는 방법에 대하여 기술한다.

• 한국동물학회지
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• 제39권1호
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• pp.54-64
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• 1996

Xenopus를 사용하여 후각원판이 정상적인 상태에서 어떠한 과정을 거쳐 발달하는지 연구하였다. 특히 뉴런의 형태적 분화, 초기 발달과 성숙 양상, 축색과 원시전뇌의 접촉 등에 초점을 맞추었다. 후각원판은 stage 23에 외배엽이 두터워진 형태로 처음 나타나는데, 쌍을 이루며 각각은 표피측에 비신경층(NNL)과 안쪽의 신경층(NL)의 두 층으로 되어 있다. stage 26 후에 원판 세포는 NNL세포 틈을 비집고 상피쪽으로 이동하기 시작하며, stage 28이 되면 선단 돌기가 표피 끝에 도달한다. stage 29/30에는 NL의 기부에서 기부 돌기(미래의 축색)가 나타나 stage 32무렵 종뇌에 도달한다. 시냅스는 stage 37/38에 처음 나타난다. 일부 원판 세포들이 후각 뉴런으로 분화하는 동안 많은 원판 세포들은 기저세포로서 후각상피에 그대로 남아 있다. 연구 결과는 뉴런 외배엽의 NL에서 기원하고 지지세포는 NNL층에서 기원함을 보여주었다. 또한 시냅스 형성 전에 뉴런의 분화가 완성됨으로써 후각뉴런의 분화는 뇌의 발달과 독립적으로 일어나며 뇌의 영향을 받지 않는다는 사실을 알 수 있었다.

• 자원환경지질
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• 제18권2호
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• pp.151-157
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• 1985

Events detected by the KIER microearthquake network operated in the Southern Part of Korea for 265 days in 1982~1984 were reviewed, and some of them were identified to be a dynamite explosion from several construction sites. The purpose of the present work is to determine the crustal structure of the Southern Korea using the time-destance data obtained from such explosion seismic records. The time·distance data can be well explained by a crustal model composed of four horizontal layers of which thickness, p and s-wave velocity ($V_p$ and $V_s$) are characterized as follows. 1st layer (surface) ; 0~2km, $V_p=5.5km/sec$, $V_s=3.3km/sec$ 2nd layer (upper crust) ; 2~15km, $V_p=6.0km/sec$, $V_s=3.5km/sec$ 3rd layer (lower crust) ; 15~29km, $V_p=6.6km/sec$, $V_s=3.7km/sec$ 4th layer (upper mantle) ; 29km~ , $V_p=7.7km/sec$, $V_s=4.3km/sec$ The relatively shallow crust·mantle boundary and low $P_n$ velocity compared with the mean values for stable intraplate region are noteworthy. Supposedely, it is responsible for the high heat flow in the South-eastern Korea or an anomalous subterranean mantle. The mean $V_p/V_s$ ratio calculated from the relation between p-wave arrival and s-p arrival times appears to be 1.735 which is nearly equivalent to the elastic medium of ${\lambda}={\mu}$. However, the ratio tends to be slightly larger with the depth. The ratio is rather high compared with that of the adjacent Japanese Island, and the fact suggests that the underlying crust and upper mantle in this region are more ductile and hence the earthquake occurrences are apt to be interrupted. As an alternative curstal model, a seismic velocity structure in which velocities are successively increased with the depth is also proposed by the inversion of the time·distance data. With the velocity profile, it is possible to calculate a travel time table which is appropriate to determine the earthquake parameters for the local events.

• Ocean and Polar Research
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• 제35권3호
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• pp.249-258
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• 2013

Vertical and horizontal mixing processes in the ocean mixed layer determine sea surface temperature and temperature variability. Accordingly, simulating these processes properly is crucial in order to obtain more accurate climate simulations and more reliable future projections using an ocean general circulation model (OGCM). In this study, by using Modular Ocean Model version 4 (MOM4) developed by Geophysical Fluid Dynamics Laboratory, the upper ocean temperature and mixed layer depth were simulated with two different vertical mixing schemes that are most widely used and then compared. The resultant differences were analyzed to understand the underlying mechanism, especially in the Tropical Pacific Ocean where the differences appeared to be the greatest. One of the schemes was the so-called KPP scheme that uses K-Profile parameterization with nonlocal vertical mixing and the other was the N scheme that was rather recently developed based on a second-order turbulence closure. In the equatorial Pacific, the N scheme simulates the mixed layer at a deeper level than the KPP scheme. One of the reasons is that the total vertical diffusivity coefficient simulated with the N scheme is ten times larger, at maximum, in the surface layer compared to the KPP scheme. Another reason is that the zonal current simulated with the N scheme peaks at a deeper ocean level than the KPP scheme, which indicates that the vertical shear was simulated on a larger scale by the N scheme and it enhanced the mixed layer depth. It is notable that while the N scheme simulates a deeper mixed layer in the equatorial Pacific compared to the KPP scheme, the sea surface temperature (SST) simulated with the N scheme was cooler in the central Pacific and warmer in the eastern Pacific. We postulated that the reason for this is that in the central Pacific atmospheric forcing plays an important role in determining SST and so does a strong upwelling in the eastern Pacific. In conclusion, what determines SST is crucial in interpreting the relationship between SST and mixed layer depth.

• 한국재료학회지
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• 제14권1호
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• pp.46-51
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• 2004

The annealing of a Cu(4.5at.% Mg)/$SiO_2$/Si structure in ambient $O_2$, at 10 mTorr, and $300-500^{\circ}C$, allows for the outdiffusion of the Mg to the Cu surface, forming a thin MgO (15 nm) layer on the surface. The surface MgO layer was patterned, and successfully served as a hard mask, for the subsequent dry etching of the underlying Mg-depleted Cu films using an $O_2$ plasma and hexafluoroacetylacetone [H(hfac)] chemistry. The resultant MgO/Cu structure, with a taper slope of about $30^{\circ}C$ shows the feasibility of the dry etching of Cu(Mg) alloy films using a surface MgO mask scheme. A dry-etched Cu(4.5at.% Mg) gate a-Si:H TFT has a field effect mobility of 0.86 $\textrm{cm}^2$/Vs, a subthreshold swing of 1.08 V/dec, and a threshold voltage of 5.7 V. A novel process for the dry etching of Cu(Mg) alloy films, which eliminates the use of a hard mask, such as Ti, and results in a reduction in the process steps is reported for the first time in this work.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.230-230
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• 2012

Graphene have showed promising performance as electrodes of organic devices such as organic transistors, light-emitting diodes, and photovoltaic solar cells. In particular, among various organic materials of graphene-based organic devices, pentacene has been regarded as one of the promising organic material because of its high mobility, chemical stability. In the bottom-contact device configuration generally used as graphene based pentacene devices, the morphology of the organic semiconductors at the interface between a channel and electrode is crucial to efficient charge transport from the electrode to the channel. For the high quality morphology, understanding of initial stages of pentacene growth is essential. In this study, we investigate self-assembly of pentacene molecules on graphene formed on a 6H-SiC (0001) substrate by scanning tunneling microscopy. At sub-monolayer coverage, adsorption of pentacene molecules on epitaxial graphene is affected by $6{\times}6$ pattern originates from the underlying buffer layer. And the orientation of pentacene in the ordered structure is aligned with the zigzag direction of the edge structure of single layer graphene. As coverage increased, intermolecular interactions become stronger than molecule-substrate interaction. As a result, herringbone structures the consequence of higher intermolecular interaction are observed.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 추계종합학술대회 논문집(1)
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• pp.307-310
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• 2000

ATM is the switching and multiplexing technology chosen by the ITU-T for the operation of B-lSDN. Basically, ATM technology is designed to combine the reliability of circuit switching with the efficiency and flexibility of packet switching technology. For servicing QoS in IPOA(IP over ATM) when the larger effort is given, it will be the good method that the original QoS benefits having ATM switching have in ATM layer underlying layer. The IETF has recently proposed Differentiated Services framework for provision of QoS. In this paper we analyse performance of two Diffserv mechanism. Threshold Dropping and Priority Scheduling. Threshold Dropping and Priority Scheduling can be regarded as basic mechanisms from which the other mechanisms have been derived. Hence comparative performance of these two mechanisms in providing required QoS is an important issue. In this Paper we carry out a performance comparison of the TD and PS mechanisms with the aim of providing the same level of packet loss to the preferred flow. Our comparison of the TD and PS allows us to determine resultant packet loss for the non-preferred flows as a function of various parameters of the two mechanisms.

• 한방안이비인후피부과학회지
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• 제33권2호
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• pp.174-185
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• 2020

Objectives : Atopic dermatitis is a chronic inflammatory disease characterized by severe pruritus, and may be accompanied by Molluscum Contagiosum, Verruca Vulgaris. This paper aims to examine the clinical implications of the treatment of 3 cases of atopic dermatitis with Molluscum Contagiosum, Verruca Vulgaris. Methods : 3 patients were treated by herbal medicine, herbal acupuncture, acupuncture, moxibustion and external preparations. Photographs of lesions, VAS were used to evaluate the changes in symptoms. Results : Atopic dermatitis is accompanied by Molluscum Contagiosum or Verruca Vulgaris because the underlying cell layer is easily exposed to Molluscum Contagiosum and Human papilloma virus because of scatch by pruritus. And all three cases have been well recovered by korean medical treatment. Conclusions : This study shows that Korean medical treatment is effective to treat atopic dermatitis with Molluscum Contagiosum, Verruca Vulgaris.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.368-368
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• 2010

Monolayers of graphite can be grown by fine controlled surface graphitization on the surfaces of various metallic and semiconducting materials. Epitaxial graphene grown on polished silicon carbide crystal surfaces has drawn much attention due to well known vacuum annealing procedures from surface analysis methods, especially scanning tunneling microscopy(STM) and scanning tunneling spectroscopy(STS). In this study, we have grown single layer and few layer graphene on silicon terminated 6H-SiC(0001) crystals. The growth of graphene layers were observed by low energy electron diffraction(LEED) patterns. Scanning tunneling microscopy and spectroscopy measurements were performed to illustrate the electronic structure which may display some clue on the influence of the underlying structure. Spatially resolved STS results acquired at the edges of epitaxial graphene show in detail the electron density of states, which is compared to theoretical calculations. STM measurements were also done on graphene films grown by chemical vapor deposition(CVD) and transferred onto a SiC(0001) crystal. These observations may provide a hint for the understanding of carrier scattering at the edges.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.129.2-129.2
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• 2013

Electron injection enhancement at OLED (organic light-emitting diodes) cathode side has mostly been achieved by insertion of a low work function layer between metal electrode and emissive layer. We investigated the interfacial chemical reactions and electronic structures of alkaline-earth metal (Ca, Ba)/Alq3 [tris(8-hydroxyquinolinato)aluminium] and Ca/BaF2/Alq3 using in-situ X-ray & ultraviolet photoelectron spectroscopy. The alkaline-earth metal deposited on Alq3 generates two energetically separated gap states in sequential manner. This phenomenon is explained by step-by-step charge transfer from alkali-earth metal to the lowest unoccupied molecular orbital (LUMO) states of Alq3, forming new occupied states below Fermi level. The BaF2 interlayer initially prevents from direct contact between Alq3 and reactive Ca metal, but it is dissociated into Ba and CaF2. However, as the Ca thickness increases, the Ca penetrates the interlayer to directly participate in the reaction with underlying Alq3. The influence of the multiple gap state formation by the interfacial chemical reaction on the OLED performance will be discussed.