• 제목/요약/키워드: ultraviolet (UV)

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질소, 인산, 칼륨시비에 따른 오이의 자외선 감수성 변화 (Effect of Fertilization of UV-B Sensitivity of Cucumber Plant)

  • 배공영;이용범;박소홍
    • 한국환경농학회지
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    • 제16권3호
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    • pp.227-232
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    • 1997
  • UV-B 조사에 의한 오이의 생장 및 생리 기능에 미치는 영향을 조사하기 위하여 비료처리에 의한 오이 제1 엽의 UV-B의 영향을 조사하였다. UV-B 조사에 의한 가시장해는 처리 1주일부터 나타났으나 생장 저해 현상은 볼 수 없었다. 그러나 UV-B 조사에 의한 생장 저해 현상은 비료 첨가에 의해 나타났으며 가장 큰 저해 효과는 질소 시용에 의해 나타났다. 이 결과는 UV-B가 질소대사에 관여하고 있음을 시사한다. 따라서 질소대사에 관여하고 있는 주 효소인 질산 환원효소 활성을 조사한 결과 UV-B 조사 7일째에 비료 처리구에서 현저히 증가하는 경향을 나타냈다. 또한 UV-B 조사에 의한 엽면적의 생장감소는 세포의 신장, 분열 생장에 관여하고 있는 식물호르몬 활성에 영향을 미치는 것으로 보여 오이의 제 1엽에서의 BA 처리에 의한 사이토카이닌의 감수성을 조사했다. UV-B 조사에 의한 사이토카이닌의 감수성은 UV-B를 조사하지 않은 구에 비해 억제되었다. 이 결과에 의해 UV-B 조사가 식물 생장에 관여하고 있는 사이토카이닌의 활성을 억제시켜 엽면적의 감소가 발생된 것으로 생각되었다.

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자외선과 초음파를 동시에 조사하는 연계 공정의 시너지 효과에 관한 연구 (A Study on the Synergistic Effects of Hybrid System Simultaneously Irradiating the UV and US)

  • 이한욱;한종훈;윤여민;박재우;이종열;허남국
    • 한국지반환경공학회 논문집
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    • 제15권7호
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    • pp.5-11
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    • 2014
  • 본 연구는 UV와 US를 함께 조사하는 UV/US 연계 공정을 통해 발생하는 시너지 효과를 조사하고, 이를 효과적으로 오염물질 처리 공정에 적용 가능한지에 대하여 연구하였다. US를 조사하는 경우에는 $H_2O_2$의 농도가 지속적으로 증가하지만, UV/US를 동시에 조사한 경우 $H_2O_2$의 농도가 증가하는 속도가 점점 감소하여 일정 농도로 수렴하는 포화속도곡선의 경향을 보였으며, US가 단독으로 조사되었을 때 생성된 $H_2O_2$와 UV/US 연계 공정을 통해 생성된 $H_2O_2$와의 차이가 오염물질 제거율 향상에 시너지 효과를 일으킨다고 판단된다. 시너지 효과를 검증하기 위해 인체에 유해한 영향을 미치는 가소제 중 하나인 bis(2-ethylhexyl) phthalate(DEHP)를 이용하여 제거실험을 실시하였다. UV와 US를 동시에 조사하는 UV/US 연계 공정의 경우 DEHP의 제거 유사 일차반응 속도상수(k1)가 $14.81{\times}10^{-3}min^{-1}$로 UV만 조사하는 경우의 $2.60{\times}10^{-3}min^{-1}$과 US만 조사하는 경우의 $10.34{\times}10^{-3}min^{-1}$보다 더 큰 것을 확인하였다. 이를 통해 UV/US 연계 공정에서 DEHP의 제거가 더 활발하게 일어남을 확인하였으며, 이는 시너지 효과에 의한 것이라 판단된다. 또한 DEHP 제거 유사 일차반응 속도상수 값을 이용하여 시너지 효과를 이론적으로 계산한 결과 시너지 효과 값은 1.15로 나타나 기준값인 1보다 큰 값을 가지므로 시너지 효과가 발생했다고 판단된다.

자외선 센서를 이용한 코로나 방전 강도에 따른 자외선 검출 (UV Detecting according to Corona Discharge Intensity using UV Sensor)

  • 곽동순;김영석
    • 조명전기설비학회논문지
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    • 제28권3호
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    • pp.78-83
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    • 2014
  • To minimize the financial loss due to power facility malfunction, on-line diagnostic techniques are required to grasp any abnormal state of facilities in the live line as well as devices to diagnose abnormal states of power facility in an easy and prompt manner. This study aims to develop a portable UV detecting system by means of UV sensors for easier and efficient inspection of the degradation state of power facility in a long distance. Accordingly, it includes a simulation of corona discharges that may occur due to degradation of power facility and detection of ultraviolet pulse generation depending on the corona discharge intensity and measuring distance in application of UV sensors. Additionally, the optimal algorithm is determined for its application to the system's degradation diagnosis program based on the measured experiment data.

A highly integrable p-GaN MSM photodetector with GaN n-channel MISFET for UV image sensor system

  • Lee, Heon-Bok;Hahm, Sung-Ho
    • 센서학회지
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    • 제17권5호
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    • pp.346-349
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    • 2008
  • A metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) is proposed as an effective UV sensing device for integration with a GaN n-channel MISFET on auto-doped p-type GaN grown on a silicon substrate. Due to the high hole barrier of the metal-p-GaN contact, the dark current density of the fabricated MSM PD was less than $3\;nA/cm^2$ at a bias of up to 5 V. Meanwhile, the UV/visible rejection ratio was 400 and the cutoff wavelength of the spectral responsivity was 365 nm. However, the UV/visible ratio was limited by the sub-bandgap response, which was attributed to defectrelated deep traps in the p-GaN layer of the MSM PD. In conclusion, an MSM PD has a high process compatibility with the n-channel GaN Schottky barrier MISFET fabrication process and epitaxy on a silicon substrate.

천연염재의 자외선 차단성능 연구 (A Study on Ulraviolet-cut Ability of Silk Fabric Dyed with Natural Dyestuffs)

  • 김월순;최인려
    • 복식문화연구
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    • 제12권1호
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    • pp.1-11
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    • 2004
  • This study was carried out on the process of natural dye substances which can flock ultraviolet rays without producing harmful substances by pollution, germs, etc. While making human body safe in contact, extracting Gardenia, Sappan wood, Radix scutellariae, Cromwell, Mugwort, Gallnut, Lac. Those are used for curing diseases, dyeing silk cloth with those extracts, and examining the color fastness, Ultraviolet protection. From this study, the following conclusion was produced. Brightness was lower in pre-mordanting than in post. And color difference showed that Radix scutellariae was the highest. Aluminum-mordanting showed a higher color difference than Fe. Colorfastness to washing was high in all samples, and the degree of color-changing by washing was the highest in the sample dyed by gardenia, pre-mordanted gallnut showed the highest degree. Colorfastness to perspiration was the highest in gardenia. UV-A test showed that all samples a high rate of 85% or higher compared with test white cloth. Especially, post-mordanted radix scutellariae, pre-mordanted gallnut and post-mordanted sappanwood showed a superior blocking rate.

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제1형 당뇨토끼에서 자외선 혈액 조사 효과 (Effects of Ultraviolet Blood Irradiation in a Type 1 Diabetic Rabbit)

  • 양영석;김기범
    • 대한의용생체공학회:의공학회지
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    • 제40권3호
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    • pp.81-96
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    • 2019
  • The purpose of this study is to evaluate the effects of ultraviolet blood irradiation on the blood when a low dose of ultraviolet (UV) C is directly irradiated to the blood in a diabetic rabbit model and to evaluate the effects on treatment for diabetes. This study results indicate that the reduced body weight is increased and blood glucose levels are significantly reduced after the UBI treatment is performed when compared to those prior to the UBI treatment. In addition, $HCO_3{^-}$ levels and blood pH were elevated and lowered, respectively. When the UBI treatment is performed in a diabetic rabbit model, in this result indicate that blood glucose levels are reduced.

폴리이미드막표면위에 경사진 자외선 조사를 이용한 액정셀에서의 고프리틸트각의 발생 (Generation of High Pretilt Angle in a Cell with Oblique non-polarized UV Light Irradiation on Polyimide Surface)

  • 서대식;한정민
    • 한국전기전자재료학회논문지
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    • 제11권6호
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    • pp.481-485
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    • 1998
  • We investigated the generation of high pretilt angle for nematic liquid crystal (NLC) in a cell with obilique non-polarized ultraviolet (UV) light irradiation on mixtured polyimide surface. It was found that the monodomain alignment of NLC is obtained with an angle of incidence of 75∼85 degrees on PI surface. We consider that the monodomain alignment of NLC is attributed to anisotropic dispersion force effect to photo-depolymerization of polymer. We successfully observed that the pretilt angle of NLC is generated above 5 degree with an angle of incidence of 75∼85 degrees. It is considered that the pretilt angle generation NLC is attributed to interaction between the LC molecules and the polymer surfaces.

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자외선조사에 의해 유도된 도열병균의 승홍에 대한 내성에 관하여 (Tolerance of the Mutants of Pyricularia oryzae against Mercuric Chloride)

  • 김경호
    • Journal of Plant Biology
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    • 제22권3호
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    • pp.85-91
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    • 1979
  • Tolerance against mercuric chloride in mutants of Pyricularia oryzae Cavara induced by ultraviolet(UV) irradiation has been investigated. The tolerant isolates obtained using ultraviolet(UV) irradiation were maintained a high level of tolerance even after 15 times transfer to the chemical free media. Each isolate of mutants UM-1, UM-2, and UM-3 on the successive monoconidial culture has genetically homogeneous for tolerance. The tolerant isolates sporulated less and showed a higher percentage of germination of conidia on media without the chemical than the parental isolate. The xotins released from the parental and the tolerant isolates have been identified as piricularin and $\alpha$-picolinic acid by paper-chromatography. The tolerant isolates produced more piricularin and its virulence on seedlings of rice varieties were higher than the parental isolates. Both piricularin production and virulance on rice were highest in the UM-2 isolate.

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Photocatalytic Degradation of 3-Nitrophenol with ZnO Nanoparticles under UV Irradiation

  • Li, Jiulong;Ko, Weon Bae
    • Elastomers and Composites
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    • 제52권2호
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    • pp.131-135
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    • 2017
  • Zinc nitrate hexahydrate [$Zn(NO_3){\cdot}6H_2O$] and sodium hydroxide [NaOH] were used as source reagents in the preparation of ZnO nanoparticles in an aqueous solution containing deionized water and ethanol in a ratio of 2:5 (v/v). ZnO nanoparticles were heated in an electric furnace at $700^{\circ}C$ for 2 h under an atmosphere of inert argon gas. The morphological and structural properties of the nanoparticles were characterized by scanning electron microscopy (SEM) and powder X-ray diffractometry (XRD). UV-vis spectrophotometry was used to analyze the photocatalytic degradation of 3-nitrophenol with ZnO nanoparticles as photocatalyst under ultraviolet irradiation at 254 nm. Evaluation of the kinetic of the photo-catalytic degradation of 3-nitrophenol indicated that the degradation of 3-nitrophenol with ZnO nanoparticles obeyed the pseudo-first order reaction rate model.

Ultraviolet and visible light detection characteristics of amorphous indium gallium zinc oxide thin film transistor for photodetector applications

  • Chang, Seong-Pil;Ju, Byeong-Kwon
    • International journal of advanced smart convergence
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    • 제1권1호
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    • pp.61-64
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    • 2012
  • The ultraviolet and visible light responsive properties of the amorphous indium gallium zinc oxide thin film transistor have been investigated. Amorphous indium gallium zinc oxide (a-IGZO) thin film transistor operate in the enhancement mode with saturation mobility of $6.99cm^2/Vs$, threshold voltage of 13.5 V, subthreshold slope of 1.58 V/dec and an on/off current ratio of $2.45{\times}10^8$. The transistor was subsequently characterized in respect of visible light and UV illuminations in order to investigate its potential for possible use as a detector. The performance of the transistor is indicates a high-photosensitivity in the off-state with a ratio of photocurrent to dark current of $5.74{\times}10^2$. The obtained results reveal that the amorphous indium gallium zinc oxide thin film transistor can be used to fabricate UV photodetector operating in the 366 nm.