• Title/Summary/Keyword: ultra-violet

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The Selection of Optimal Process Variables in UV-Vacuum Casting (UV-Vaccum Casting의 최적 공정 변수 선정)

  • Kim, T. W.;Woo, S. M.;Lee, S.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2000.11a
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    • pp.453-456
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    • 2000
  • This paper presents experimental results on selecting optimal process parameters for UV-Vaccum casting. The UV-Vacuum casting is a relatively new process that allows very rapid mold preparation and part duplication via UV curing. Effect of various process variables such as pressure and temperature on mold strength and part accuracy was evaluated by using Taguchi method.

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Spectral Analysis of Sunlight Collector System (태양광 채광시스템의 스펙트럼 분석)

  • 박준석;어익수;여인선
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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    • 1999.11a
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    • pp.80-84
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    • 1999
  • Sunlight Collector System is a new way to make sunlight available to living things. It transmits sunlight through fiber optics to wherever is needs. It applies the artificial lighting, underground lighting, intelligent building, museum lighting, restoration-room to health etc. Cutting out most of the ultra-violet and intra-red radiation. In this paper, we measured the spectrum analysis of sunlight and Sunlight collector System's light. Also, we found out the distance to get visible light.

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UV emission characteristics of Ne+$N_2$ gas-mixture discharges in AC Plasma Display Panel

  • Baek, Byung-Jong;Hong, Sang-Min;Choi, Kyung-Cheol
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.586-589
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    • 2002
  • The Ultra Violet(UV) emission characteristics of Neon + Nitrogen gas-mixture discharge was investigated in AC plasma display panel. The firing voltage of Ne+$N_2$ gas-mixture discharge increased with increasing nitrogen concentration. The UV intensity emitted from the gas discharge also increased with increasing nitrogen concentration. The UV efficiency increase with increasing $N_2$ partial pressure at low $N_2$ concentration, and then UV efficiency is saturated at high $N_2$ concentration.

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Gas dischage Simulation for Color Plasma Display Panel and Measurement of VUV (Vacuum UltraViolet) (칼라 플라즈마 디스플레이 패널용 혼합 가스 최적화 시뮬레이션 및 진공 자외선 측정)

  • Park, Hun-Gun;Lee, Seok-Hyun
    • Proceedings of the KIEE Conference
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    • 1997.07e
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    • pp.1666-1668
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    • 1997
  • This paper reports the optimal gas mixing ratio for color plasma display panel to improve luminous efficiency using gas dischage simulation which contains energy equation. We verified a simulation by measuring vacuum ultraviolet. The luminous efficiency has improved considerably(about 30%) by adding Ar (0.5%), compared with Ne-Xe(4%) mixing gas.

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Color Change of the Dyed Materials by Ultra-Violet and Visible Irradiation (자외선 및 가시광선에 의한 염색시료의 변퇴색)

  • 김홍범;한종성
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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    • 1995.10a
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    • pp.13-18
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    • 1995
  • To evaluate the color change of the dyed materials by ultraviolet and visible rays in the museum, a system that accelerates dye fading was developed. Radiation energy from a Xenon lamp is irradiated on the samples through the filters of defferent cut-on wavelengths. As a result, the color change as a function of the wavelength and irradiation is calculated.

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WTP UV Disinfection System (국내하수처리장 자외선소독조 운영실태 및 기술동향)

  • Lee, J.Y.;Kim, Y.T.;Lee, T.J.
    • 유체기계공업학회:학술대회논문집
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    • 2005.12a
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    • pp.126-132
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    • 2005
  • UV disinfection system allows the disinfection of municipal and industrial water and wastewater without the use of expensive chlorination and dechlorination techniques, labor intensive equipments In traditional ultraviolet systems the UV lamps are seperated from water by quartz sleeves. quartz is one of. the few materials that is virtually transparent to UV light, the UV lamp is placed inside the Quartz sleeve. UV light from the lamp is passed through the quartz and into the water, thereby providing disinfection. In fluoropolymer tube-used non-contact UV systems, the water flows through fluoropolymer plastic tubes. banks of UV lamps surround these tubes such that each tube gets exposed to ultra violet light from all sides. in non-contact design the lamps operates at almost constant temperature. this design is extremly efficient in the utilization of UV energy and superior to conventional contact- systems.

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The Fabrication of Micro-framework Using Photosensitive Glass-ceramics (감광성 결정화유리를 이용한 미세 구조물 제조에 대한 연구)

  • 김형준;이상훈;연석주;최성철
    • Journal of the Korean Ceramic Society
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    • v.37 no.1
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    • pp.82-89
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    • 2000
  • In lithium silicate photosensitive glass-ceramics, the relationship between lithography time and crystallization, and the effect of addition of mineral acid in etching rate and pattern shape were investigated. Irradiation times for micropatterning were less than 5 minutes in which Ce3+ ions in glass were changed rapidly to Ce4+ with ultra violet light. Overexposure to ultra brought about blot of pattern by diffiraction of light. Addition of mineral acid to HF enhanced etching rate as compared with HF solution only. The addition of H2SO4 especially increased the etching rate by 70%. But the mixed solution also increased the etching rate of the noncrystallized portion of the glass and this resulted in heavy etching. Etching with ultrasonic wave showed higher etching rate than that with the static or fluid method.

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Role of gas flow rate during etching of hard-mask layer to extreme ultra-violet resist in dual-frequency capacitively coupled plasmas

  • Gwon, Bong-Su;Lee, Jeong-Hun;Lee, Nae-Eung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.132-132
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    • 2010
  • In the nano-scale Si processing, patterning processes based on multilevel resist structures becoming more critical due to continuously decreasing resist thickness and feature size. In particular, highly selective etching of the first dielectric layer with resist patterns are great importance. In this work, process window for the infinitely high etch selectivity of silicon oxynitride (SiON) layers and silicon nitride (Si3N4) with EUV resist was investigated during etching of SiON/EUV resist and Si3N4/EUV resist in a CH2F2/N2/Ar dual-frequency superimposed capacitive coupled plasma (DFS-CCP) by varying the process parameters, such as the CH2F2 and N2 flow ratio and low-frequency source power (PLF). It was found that the CH2F2/N2 flow ratio was found to play a critical role in determining the process window for ultra high etch selectivity, due to the differences in change of the degree of polymerization on SiON, Si3N4, and EUV resist. Control of N2 flow ratio gave the possibility of obtaining the ultra high etch selectivity by keeping the steady-state hydrofluorocarbon layer thickness thin on the SiON and Si3N4 surface due to effective formation of HCN etch by-products and, in turn, in continuous SiON and Si3N4 etching, while the hydrofluorocarbon layer is deposited on the EUV resist surface.

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