• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 학술대회지
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• pp.784-786
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• 2004

Overlap errors and side-lobes can be simultaneously solved by the rule-based correction using scattering bars with the rules extracted from test patterns. Process parameters affecting the attPSM lithography simulation have been determined by the fitting method to the process data. Overlap errors have been solved applying the correction rules to the metal patterns overlapped with contact/via. Moreover, the optimal insertion rule of the scattering bars has made it possible to suppress the side-lobes and to get additional pattern fidelity at the same time.