• Journal of Magnetics
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• 제15권1호
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• pp.7-11
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• 2010

Spin-orbit coupling (SOC) is a source of strong spin dephasing in two- and three-dimensional semiconducting systems. We report that spin dephasing in a two-dimensional electron gas can be suppressed by introducing a quantum point contact. Surprisingly, this suppression was not limited to the vicinity of the contact but extended to the entire two-dimensional electron gas. This facilitates the electrical control of the spin degree of freedom in a two-dimensional electron gas through spin-orbit coupling.

• Journal of Korean Vacuum Science & Technology
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• 제1권1호
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• pp.19-23
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• 1997

The conductance of a microscopic constriction in a two-dimensional electron gas is obtained as a function of both the constriction width and curvature. When the quantized conductance G at plateaus is given by the channel number Nc times the quantum unit 2e2/h, Nc is found to be a function of not only the width and but also the curvature. At a given W, Nc increases by one whenever the constriction curvature decreases by about a certain value. Until the shape smoothness becomes comparable to the two parallel boundaries, there exist more channels avaliable for conduction in a smaller-curvature constriction than in a larger-curvature one. This result is very interesting because Nc has been considered to depend on the width W only. this reflects that the number of the quantized transverse levels depend o both the constriction width and curvature in a two-dimensional electron gas.

• Applied Science and Convergence Technology
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• 제23권3호
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• pp.128-133
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• 2014

We study the ballistic spin transport properties in a two-dimensional electron gas system in the presence of magnetic barriers using a transfer matrix method. We concentrate on the size-effect of the magnetic barriers parallel to a two-dimensional electron gas plane. We calculate the transmission probability of the ballistic spin transport in the magnetic barrier structure while varying the width of the magnetic barriers. It is shown that resonant tunneling oscillation is affected by the width and height of the magnetic barriers sensitively as well as by the inter-spacing of the barriers. We also consider the effect of additional electrostatic modulation on the top of the magnetic barriers, which could enhance the current spin polarization. Because all-semiconductor-based devices are free from the resistance mismatch problem, a resonant tunneling structure using the two-dimensional electron gas system with electric-magnetic modulation would play an important role in future spintronics applications. From the results here, we provide information on the physical parameters of a device to produce well-defined spin-polarized current.

• 전자공학회논문지A
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• 제29A권3호
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• pp.59-65
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• 1992

In this paper, the Numerov method is applied to solve the Schroedinger equation for $Al_{0.3}Ga_{0.7}AS/GaAs/Al_{0.3}Ga_{0.7}As$ double-heterojunction HEMT structures. The 3 subband energy levels, corresponding wave functions, 2-dimensional electron gas density, and conduction band edge profile are calculated from a self-consistent iterative solution of the Schroedinger equation and the Poisson equation. In addition, 2-dimensional electron gas densities in a quantum well of double heterostructure are calculated as a function of applied gate voltage. The density in the double heterojunction quantum well is increased to about more than 90%, however, the transconductance of the double heterostructure HEMT is not improved compared to that of the single heterostructure HEMT. Thus, double-heterojunction structures are expected to be suitable to increase the current capability in a HEMT device or a power HEMT structure.

• Journal of Magnetics
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• 제10권2호
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• pp.66-70
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• 2005

The junction properties between the ferromagnet (FM) and two-dimensional electron gas (2DEG) system are crucial to develop spin electronic devices. Two types of 2DEG layer, InAs and GaAs channel heterostructures, are fabricated to compare the junction properties of the two systems. InAs-based 2DEG layer with low trans-mission barrier contacts FM and shows ohmic behavior. GaAs-based 2DEG layer with $Al_2O_3$ tunneling layer is also prepared. During heat treatment at the furnace, arsenic gas was evaporated and top AlAs layer was converted to aluminum oxide layer. This new method of forming spin injection barrier on 2DEG system is very efficient to obtain tunneling behavior. In the potentiometric measurement, spin-orbit coupling of 2DEG layer is observed in the interface between FM and InAs channel 2DEG layers, which proves the efficient junction property of spin injection barrier.

• E2M - 전기 전자와 첨단 소재
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• 제25권12호
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• pp.13-20
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• 2012

• 대한화학회지
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• 제40권6호
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• pp.401-408
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• 1996

일반적으로 고온 초전도체들은 2차원적인 구조를 가지고 있으며, 2차원적인 구조가 초전도 물성과 어떠한 관계를 갖는가를 이해하는 것은 매우 중요하다. 본 논문에서는 초전도체 속의 전자기체를 기체분자운동론을 사용하여 각 차원에서의 상태 방정식을 유도하였으며, 그 기체가 액화될 때의 온도, 임계온도를 구하였다. 그 결과 전자의 자유도를 제한시킴에 따라 임계온도가 상승함을 알 수 있었다. 이것은 2차원적인 구조물질에 1차원적인 전자유통 경로가 있을 경우 여러가지의 임계온도를 가질 수 있음을 의미한다.

• 대한전자공학회논문지
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• 제25권11호
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• pp.1373-1379
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• 1988

본 연구에서는 FDM(finite difference method)을 이용한 수치적 방법을 사용하여 MODFET (MO-dulation doped FET)의 전위 분포와 전자 밀도를 이차원적으로 해석하였다. 일차원적 해석 방법에서는 MODFET의 게이트 부분만을 계산하는 반면, 이차원적 해석 방법은 소오스와 드레인 부분도 계산해줌으로써 일차원적 해석 방법에서 무시되는 기생 효과(parasitic effect)를 고려하여 더 정확한 해석이 가능하였다. 결과로서 스페이스(spacer) 두께와 (n)AlGaAs층의 도핑 농도의 변화에 따른 채널내에서 2DEG(2dimensional electron gas)의 단위 면적에 대한 밀도와의 관계를 정량적으로 제시하였으며 스페이서의 두께가 작아지거나 (n)AlGaAs 층의 도핑 농도가 커질수록 MODFET 채널 내의 전자 밀도가 증가함을 확인하였다.

• 한국산학기술학회:학술대회논문집
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• 한국산학기술학회 2004년도 춘계학술대회
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• pp.158-161
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• 2004

In this study, an analytical model for I-V characteristics of an n-AIGaAs / GaAs Delta doped HEMT is proposed. The two-dimensional electron gas density and the conduction band edge profile are calculated from a self-consistent iterative solution of the Poisson equation. The parameters, which include the saturation velocity, two-dimensional electron gas concentration, thickness of the doped and undoped layer(AIGaAs, GaAs, spacer etc.,), are in good agreement with the independent calculations.

• Journal of the Korean Physical Society
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• 제73권11호
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• pp.1612-1618
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• 2018

In this work, the ground-state properties of an interacting electron gas confined in a two-dimensional quantum dot system with the Gaussian potential ${\upsilon}(r)=V_0(1-{\exp}(-r^2/p))$, where $V_0$ and p are confinement parameters, are determined numerically by using the Thomas-Fermi approximation. The shape of the potential is modified by changing the $V_0$ and the p values, and the influence of the confining potential on the system's properties, such as the chemical energy, the density profile, the kinetic energy, the confining energy, etc., is analyzed for both the non-interacting and the interacting cases. The results are compared with those calculated for a harmonic potential, and excellent agreement is obtained in the limit of high p values for both the non-interacting and the interacting cases.