• Steel and Composite Structures
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• 제18권4호
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• pp.811-831
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• 2015

This paper focuses on the strengthening methods used for improving the compression behaviors of perforated box-section walls as provided in the anchorage zones of steel pylons. Rectangular plates containing double-row continuous elliptical holes are investigated by employing the boundary condition of simple supporting on four edges in the out-of-plane direction of plate. Two types of strengthening stiffeners, named flat stiffener (FS) and longitudinal stiffener (LS), are considered. Uniaxial compression tests are first conducted for 18 specimens, of which 5 are unstrengthened plates and 13 are strengthened plates. The mechanical behaviors such as stress concentration, out-of-plane deformation, failure pattern, and elasto-plastic ultimate strength are experimentally investigated. Finite element (FE) models are also developed to predict the ultimate strengths of plates with various dimensions. The results of FE analysis are validated by test data. The influences of non-dimensional parameters including plate aspect ratio, hole spacing, hole width, stiffener slenderness ratio, as well as stiffener thickness on the ultimate strengths are illustrated on the basis of numerous parametric studies. Comparison of strengthening efficiency shows that the continuous longitudinal stiffener is the best strengthening method for such perforated plates. The simplified formulas used for estimating the compression strengths of strengthened plates are finally proposed.

• Wind and Structures
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• 제7권5호
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• pp.317-332
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• 2004

Wind tunnel experiments were conducted under highly turbulent and disturbed flow conditions over a solid/perforated plate with a long splitter plate in its plane of symmetry. The effect of varied level of perforation of the normal plate on fluctuating velocities and fluctuating pressures measured across and along the separation bubble was studied. The different perforation levels of the normal plate; that is 0%, 10%, 20%, 30%, 40% and 50% are studied. The Reynolds number based on step height was varied from $4{\times}10^3$ to $1.2{\times}10^4$. The shape and size of the bubble vary with different perforation level of the normal plate that is to say the bubble is reduced both in height and length up to 30% perforation level. For higher perforation of the normal plate, bubble is completely swept out. The peak turbulence value occurs around 0.7 to 0.8 times the reattachment length. The turbulence intensity values are highest for the case of solid normal plate (bleed air is absent) and are lowest for the case of 50% perforation of the normal plate (bleed air is maximum in the present study). From the analysis of data it is observed that $\sqrt{\overline{u^{{\prime}2}}}/(\sqrt{\overline{u^{{\prime}2}}})_{max}$, (the ratio of RMS velocity fluctuation to maximum RMS velocity fluctuation), is uniquely related with dimensionless distance y/Y', (the ratio of distance normal to splitter plate to the distance where RMS velocity fluctuation is half its maximum value) for all the perforated normal plates. It is interesting to note that for 50% perforation of the normal plate, the RMS pressure fluctuation in the flow field gets reduced to around 60% as compared to that for solid normal plate. Analysis of the results show that the ratio [$C^{\prime}_p$ max/$-C_{pb}(1-{\eta})$], where $C^{\prime}_p$ max is the maximum coefficient of fluctuating pressure, $C_{pb}$ is the coefficient of base pressure and ${\eta}$ is the perforation level (ratio of open to total area), for surface RMS pressure fluctuation levels seems to be constant and has value of about 0.22. Similar analysis show that the ratio $[C^{\prime}_p$ max/$-C_{pb}(1-{\eta})]$ for flow field RMS pressure fluctuation levels seems to be constant and has a value of about 0.32.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.221-221
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• 2014

The present work proposes an improved numerical simulator for design and modification of large area capacitively coupled plasma (CCP) processing chamber. CCP, as notoriously well-known, demands the tremendously huge computational cost for carrying out transient analyses in realistic multi-dimensional models, because electron dissociations take place in a much smaller time scale (${\Delta}t{\approx}10-8{\sim}10-10$) than time scale of those happened between neutrals (${\Delta}t{\approx}10-1{\sim}10-3$), due to the rf drive frequencies of external electric field. And also, for spatial discretization of electron flux (Je), exponential scheme such as Scharfetter-Gummel method needs to be used in order to alleviate the numerical stiffness and resolve exponential change of spatial distribution of electron temperature (Te) and electron number density (Ne) in the vicinity of electrodes. Due to such computational intractability, it is prohibited to simulate CCP deposition in a three-dimension within acceptable calculation runtimes (<24 h). Under the situation where process conditions require thickness non-uniformity below 5%, however, detailed flow features of reactive gases induced from three-dimensional geometric effects such as gas distribution through the perforated plates (showerhead) should be considered. Without considering plasma chemistry, we therefore simulated flow, temperature and species fields in three-dimensional geometry first, and then, based on that data, boundary conditions of two-dimensional plasma discharge model are set. In the particular case of SiH4-NH3-N2-He CCP discharge to produce deposition of SiNxHy thin film, a cylindrical showerhead electrode reactor was studied by numerical modeling of mass, momentum and energy transports for charged particles in an axi-symmetric geometry. By solving transport equations of electron and radicals simultaneously, we observed that the way how source gases are consumed in the non-isothermal flow field and such consequences on active species production were outlined as playing the leading parts in the processes. As an example of application of the model for the prediction of the deposited thickness uniformity in a 300 mm wafer plasma processing chamber, the results were compared with the experimentally measured deposition profiles along the radius of the wafer varying inter-electrode gap. The simulation results were in good agreement with experimental data.