• Journal of Conservation Science
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• v.37 no.6
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• pp.748-766
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• 2021

The Iksan Ssangneung (twin tombs), a pair of tombs comprising the Daewangneung (large royal tomb) and the Sowangneung (small royal tomb), were constructed in the typical style of stone tunnel and chamber tombs in the Baekje Kingdom during the Sabi period (538 to 660 AD) of ancient Korea. Soil layers exposed during excavation of Sowangneung in a trench east of the tomb are: the bottommost layer, the ground level layer, the Panchuk (rammed earth) layer of the Baekje, the layer created by a grave robbery, and soil recovered during the Japanese colonial period. Soil samples were obtained by segmenting an easy stratigraphic horizon into sub categorized soil layers, and their material properties were analyzed; they are composed mainly of sandy loam based on the particle size distributions. In the site foundation, loamy sand is packed in the bottommost layer, and sandy loam with high sand and silty sand fills most of the overlying layer. The central and topmost portion of the Baekje layer is composed of loam with high clay content. All soil layers show geochemical behaviors similar to those of the bottommost layer. X-ray diffraction analysis verified kaolinite in all layers, also observed in soil layers displaying high crystallinity. Kaolinite and halloysite were identified by scanning electron microscopy. Thus, we conclude that the Baekje layer of the Sowangneung is composed of sandy loam containing kaolin procured from near the site. An impermeable middle to upper layer was created using viscous loam. The top of the tomb was closed tightly.

• Wind and Structures
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• v.15 no.6
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• pp.481-494
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• 2012

The greenhouse type metal structures are increasingly used in modern construction of livestock farms because they are less laborious to construct and they provide a more favorable microclimate for the growth of animals compared to conventional livestock structures. A key stress factor for metal structures is the wind. The external pressure coefficient ($c_{pe}$) is used for the calculation of the wind effect on the structures. A high pressure coefficient value leads to an increase of the construction weight and subsequently to an increase in the construction cost. The EC1 in conjunction with EN 13031-1:2001, which is specialized for greenhouses, gives values for this coefficient. This value must satisfy two requirements: the safety of the structure and a reduced construction cost. In this paper, the Navier - Stokes and continuity equations are solved numerically with the finite element method (Galerkin Method) in order to simulate the two dimensional, incompressible, viscous air flow over the vaulted roofs of single span and twin-span with eaves livestock greenhouses' structures, with a height of 4.5 meters and with length of span of 9.6 and 14 m. The simulation was carried out in a wind tunnel. The numerical results of pressure coefficients, as well as, the distribution of them are presented and compared with data from Eurocodes for wind actions (EC1, EN 13031-1:2001). The results of the numerical experiment were close to the values given by the Eurocodes mainly on the leeward area of the roof while on the windward area a further segmentation is suggested.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.25 no.12
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• pp.1821-1830
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• 2001

The flow around free end of a finite circular cylinder (FC) embedded in an atmospheric boundary layer has been investigated experimentally. The experiments were carried out in a closed-return type subsonic wind tunnel with varying aspect ratio of the finite cylinder mounted vertically on a flat plate. The wakes behind a 2-D cylinder and a finite cylinder located in a uniform flow were measured for comparison. Reynolds number based on the cylinder diameter was about Re=20,000. A hot-wire anemometer was employed to measure the wake velocity and the mean pressure distributions on the cylinder surface were also measured. The flow past the FC free end shows a complicated three-dimensional wake structure and flow phenomenon is quite different from that of 2-D cylinder. The three-dimensional flow structure was attributed to the downwashing counter rotating vortices separated from the FC free end. As the FC aspect ratio decreases, the vortex shedding frequency decreases and the vortex formation length increases compared to that of 2-D cylinder. Due to the descending counter-rotating twin-vortex, near the FC free end, regular vortex shedding from the cylinder is suppressed and the vortex formation region is hardly distinguished. Around the center of the wake, the mean velocity for the FC located in atmospheric boundary layer has large velocity deficit compared to that of uniform flow.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.11
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• pp.914-920
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• 2000

When the charge-trap type SONOS(polysilicon-oxide-nitride-oxide-semiconductor) cells are used to flash memory, the tunneling program/erase condition to minimize the generation of interface traps was investigated. SONOSFET NVSM(Nonvolatile Semiconductor Memory) cells were fabricated using 0.35 ㎛ standard memory cell embedded logic process including the ONO cell process, based on retrograde twin-well, single-poly, single metal CMOS(Complementary Metal Oxide Semiconductor) process. The thickness of ONO triple-dielectric for the memory cell is tunnel oxide of 24 $\AA$, nitride of 74 $\AA$, blocking oxide of 25 $\AA$, respectively. The program mode(V$\_$g/=7, 8, 9 V, V$\_$s/=V$\_$d/=-3 V, V$\_$b/=floating) and the erase mode(V$\_$g/=-4, -5, -6 V, V$\_$s/=V$\_$d/=floating, V$\_$b/=3 V) by MFN(Modified Fowler-Nordheim) tunneling were used. The proposed programming condition for the flash memory of SONOSFET NVSM cells showed less degradation(ΔV$\_$th/, S, G$\_$m/) characteristics than channel MFN tunneling operation. Also, the program inhibit conditins of unselected cell for separated source lines NOR-type flash memory application were investigated. we demonstrated that the phenomenon of the program disturb did not occur at source/drain voltage of 1 V∼12 V and gate voltage of -8 V∼4 V.