• 보존과학회지
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• 제37권6호
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• pp.748-766
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• 2021

익산 쌍릉은 대왕릉과 소왕릉을 포함하는 명칭으로 백제 사비기(538~660 AD)의 횡혈식석실묘이다. 소왕릉의 발굴과정에서 노출된 봉분 동측 토층은 하부로부터 기반층, 정지층, 백제시대 판축층, 도굴층 및 일제강점기 복토층으로 나눌 수 있다. 이 연구를 위해 층준을 세분하여 시료를 확보하고 재료학적 특성을 분석하였다. 토층의 입도분석 결과, 대체로 사양토의 토성을 보이며, 백제시대 판축토층에서는 양질사토가 성토되어 있고 그 위로 사양토가 판축의주를 이룬다. 백제층의 중앙부와 최상부에는 점토 함량이 많고 일정한 입도를 가진 양토를 사용하였다. 모든 토층은 층위에 따라 약간의 차이가 있지만, 유사한 지구화학적 거동특성을 보여 토양의 모재와 성인은 거의 같은 것으로 나타났다. X-선 회절분석으로 모든 층위에서 카올리나이트를 동정하였으며, 주사전자현미경으로 카올리나이트와 할로이사이트를 확인하였다. 따라서 소왕릉 봉분의 백제시대 판축토층은 유적 일대에서 조달한 고령토가 함유된 사양토로 성토하였으며, 중상부에 점성이 강한 양토를 사용하여 불투수층을 조성하고 봉분 최상부를 밀실하게 마감한 것으로 해석된다.

• Wind and Structures
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• 제15권6호
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• pp.481-494
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• 2012

The greenhouse type metal structures are increasingly used in modern construction of livestock farms because they are less laborious to construct and they provide a more favorable microclimate for the growth of animals compared to conventional livestock structures. A key stress factor for metal structures is the wind. The external pressure coefficient ($c_{pe}$) is used for the calculation of the wind effect on the structures. A high pressure coefficient value leads to an increase of the construction weight and subsequently to an increase in the construction cost. The EC1 in conjunction with EN 13031-1:2001, which is specialized for greenhouses, gives values for this coefficient. This value must satisfy two requirements: the safety of the structure and a reduced construction cost. In this paper, the Navier - Stokes and continuity equations are solved numerically with the finite element method (Galerkin Method) in order to simulate the two dimensional, incompressible, viscous air flow over the vaulted roofs of single span and twin-span with eaves livestock greenhouses' structures, with a height of 4.5 meters and with length of span of 9.6 and 14 m. The simulation was carried out in a wind tunnel. The numerical results of pressure coefficients, as well as, the distribution of them are presented and compared with data from Eurocodes for wind actions (EC1, EN 13031-1:2001). The results of the numerical experiment were close to the values given by the Eurocodes mainly on the leeward area of the roof while on the windward area a further segmentation is suggested.

• 대한기계학회논문집B
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• 제25권12호
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• pp.1821-1830
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• 2001

The flow around free end of a finite circular cylinder (FC) embedded in an atmospheric boundary layer has been investigated experimentally. The experiments were carried out in a closed-return type subsonic wind tunnel with varying aspect ratio of the finite cylinder mounted vertically on a flat plate. The wakes behind a 2-D cylinder and a finite cylinder located in a uniform flow were measured for comparison. Reynolds number based on the cylinder diameter was about Re=20,000. A hot-wire anemometer was employed to measure the wake velocity and the mean pressure distributions on the cylinder surface were also measured. The flow past the FC free end shows a complicated three-dimensional wake structure and flow phenomenon is quite different from that of 2-D cylinder. The three-dimensional flow structure was attributed to the downwashing counter rotating vortices separated from the FC free end. As the FC aspect ratio decreases, the vortex shedding frequency decreases and the vortex formation length increases compared to that of 2-D cylinder. Due to the descending counter-rotating twin-vortex, near the FC free end, regular vortex shedding from the cylinder is suppressed and the vortex formation region is hardly distinguished. Around the center of the wake, the mean velocity for the FC located in atmospheric boundary layer has large velocity deficit compared to that of uniform flow.

• 한국전기전자재료학회논문지
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• 제13권11호
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• pp.914-920
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• 2000

When the charge-trap type SONOS(polysilicon-oxide-nitride-oxide-semiconductor) cells are used to flash memory, the tunneling program/erase condition to minimize the generation of interface traps was investigated. SONOSFET NVSM(Nonvolatile Semiconductor Memory) cells were fabricated using 0.35 ㎛ standard memory cell embedded logic process including the ONO cell process, based on retrograde twin-well, single-poly, single metal CMOS(Complementary Metal Oxide Semiconductor) process. The thickness of ONO triple-dielectric for the memory cell is tunnel oxide of 24 $\AA$, nitride of 74 $\AA$, blocking oxide of 25 $\AA$, respectively. The program mode(V$\_$g/=7, 8, 9 V, V$\_$s/=V$\_$d/=-3 V, V$\_$b/=floating) and the erase mode(V$\_$g/=-4, -5, -6 V, V$\_$s/=V$\_$d/=floating, V$\_$b/=3 V) by MFN(Modified Fowler-Nordheim) tunneling were used. The proposed programming condition for the flash memory of SONOSFET NVSM cells showed less degradation(ΔV$\_$th/, S, G$\_$m/) characteristics than channel MFN tunneling operation. Also, the program inhibit conditins of unselected cell for separated source lines NOR-type flash memory application were investigated. we demonstrated that the phenomenon of the program disturb did not occur at source/drain voltage of 1 V∼12 V and gate voltage of -8 V∼4 V.