• 전력전자학회:학술대회논문집
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• 전력전자학회 2003년도 춘계전력전자학술대회 논문집(2)
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• pp.677-680
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• 2003

The control of the SRM(Switched Reluctance Motor) is usually based on the non-linear inductance profiles with positions. So determination of optimal switching angle is very different. we present self-tuning control of SRM for maximum torque and efficiency with phase current and shaft position sensor During the sample time, micro-controller checks the number of pre-checked pulse. After micro-controller calculates between two data, it move forward or backward turn-off angle. When the turn-off angle is fixed optimal turn-off angle, turn-on angle moves forward or backward by a step using self-tuning control method. And then, optimal turn-off angle is searched once again. As such a repeating process, turn-on/off angle is moves automatically to obtain the maximum torque and efficiency. The experimental results are presented to validate the self-tuning algorithm.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1990년도 추계학술대회 논문집 학회본부
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• pp.263-266
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• 1990

In order to high-respone and high-reliability of devices, it depended upon how we can increase the high-frequency of the Inverter, UPS and it's application. but using high-frequency of self turn-off devices, it is important to reduce switching device loss and spike voltage of turn off. This paper proposed new methode about computer simulation of device loss also experimental results with switching device characteristic are presented.

• Journal of Power Electronics
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• 제16권1호
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• pp.374-387
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• 2016

This paper derives an improved analytical model to estimate switching loss and analyze the effects of parasitic elements on the switching performance of SiC MOSFETs. The proposed analytical model considers the parasitic inductances, the nonlinearity of the junction capacitances and the nonlinearity of the trans-conductance. The turn-on process and the turn-off process are illustrated in detail, and equivalent circuits are derived and solved for each switching transition. The proposed analytical model is more accurate and matches better with experimental results than other analytical models. Note that switching losses calculated based on experiments are imprecise, because the energy of the junction capacitances is not properly disposed. Finally, the proposed analytical model is utilized to account for the effects of parasitic elements on the switching performance of a SiC MOSFET, and the circuit design rules for high frequency circuits are given.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1547-1549
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• 1996

The electrical and optical switching characteristics of gold-doped silicon p-i-n diodes have been investigated. The device shows a dark switching voltage of about 500 V. The switching voltage decreases rapidly when the illumination level is increased. The differential sensitivity of optical gating over linear region is $d(V_{Th}/V_{Tho})/dP_{Ph}$=0.25/uW. The turn-on delay time and the turn-on rise time decrease with increasing optical pulse power. The turn-off delay and the fall time are negligible.

• 전력전자학회논문지
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• 제18권3호
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• pp.263-269
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• 2013

The flyback converter has been applied widely in isolated DC/DC power converters because this converters employ a single MOSFET switch. The leakage inductance should be minimized for high efficiency of flyback converter. but in reality, it is very difficult. Namely, The Snubber circuit is essential to recover the leakage inductance stored energy when the switch is turn off. Flyback Converter typically operates in DCM mode and when switch is turn off in hard switching, this hard switching action results in a high power losses and switching stresses. In order to overcome these problems, a novel soft switching flyback converter using resonant snubber circuit is proposed in this paper. The resonant snubber circuit is composed of the transformer leakage inductance and a capacitor. To verify and confirm the proposed resonant snubber circuit, PSIM simulation and hardware prototype are implemented. Simulation and Experimental results indicate that the proposed resonant snubber circuit is effective.

• Journal of Power Electronics
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• 제16권5호
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• pp.1689-1697
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• 2016

Continuous conduction mode (CCM) boost converters are commonly used in home appliances and various industries because of their simple topology and low input current ripples. However, these converters suffer from several disadvantages, such as hard switching of the active switch and reverse recovery problems of the output diode. These disadvantages increase voltage stresses across the switch and output diode and thus contribute to switching losses and electromagnetic interference. A new topology is presented in this work to improve the switching characteristics of CCM boost converters. Zero-current turn-on and zero-voltage turn-off are achieved for the active switches. The reverse-recovery current is reduced by soft turning-off the output diode. In addition, an input current sensorless control is applied to the proposed topology by pre-calculating the duty cycles of the active switches. Power factor correction is thus achieved with less effort than that required in the traditional method. Simulation and experimental results verify the soft-switching characteristics of the proposed topology and the effectiveness of the proposed input current sensorless control.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 하계종합학술대회논문집
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• pp.417-420
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• 1998

In this paper the formation mechanism of tail current is analyzed and its effect on GTO turn-off performance is given. The conclusion is that the large tail current will considerably increase the turn-off loss $E_{off}$ and cause the re-triggering during GTO's off-switching, therefore the best design criterion is that the tail current of power GTO must be as low as possible.w as possible.

• 전자공학회지
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• 제20권9호
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• pp.82-89
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• 1993

새로운 개념의 인버터로서 종래의 인버터의 직류부에 공진회로를 설치하여 직류와 교류를 공진 DC 링크로 접속하는 방식이다. 공진동작으로 링크부의 전압이 명이되는 것을 이용하여 인버터의 PSD를 ZVSAT킨다. (PSD = Power Switching Device)전압공진형은 ZVS가 가능하나 어느 정도의 전류를 OFF할 필요가 있기 때문에 비교적 TURN OFF의 속도가 빠른 MOSFET, SIT, IGBT등의 PSD를 이용하여 수십 kHz의 스위칭 을 한다. 여기에 대하여 전류공진형은 ZCS(Zero Current State)가 가능하게 되고 OFF하는 전류도 작게되기 때문에 TURN OFF가 늦은 BJT와 GTO. IGBT 싸이리스터 등의 TURN OFF 시간이 꾀 짧은 것들을 이용하여 수십 kHz의 스위칭이 가능하게 된다. 이들 PSD는 대용량화에 적합하여 대용량 전력변환기에의 적용이 시도되고 있다. 여기에서는 이들 인버터에 관하여 기본적인 동작원리와 제어방식을 중심으로 설명한다. 또한 공진형 방식의 결점인 전압과 전류의 피크치를 저감하는 전압 Clamp식에 관하여도 기술한다.

• Journal of Electrical Engineering and Technology
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• 제2권1호
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• pp.89-97
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• 2007

This paper presents a new circuit topology of active edge resonant snubbers assisted half-bridge soft switching PWM inverter type DC-DC high power converter for DC bus feeding power plants. The proposed DC-DC power converter is composed of a typical voltage source-fed half-bridge high frequency PWM inverter with a high frequency planar transformer link in addition to input DC busline side power semiconductor switching devices for PWM control scheme and parallel capacitive lossless snubbers. The operating principle of the new DC-DC converter treated here is described by using switching mode equivalent circuits, together with its unique features. All the active power switches in the half-bridge arms and input DC buslines can achieve ZCS turn-on and ZVS turn-off commutation transitions. The total turn-off switching losses of the power switches can be significantly reduced. As a result, a high switching frequency IGBTs can be actually selected in the frequency range of 60 kHz under the principle of soft switching. The performance evaluations of the experimental setup are illustrated practically. The effectiveness of this new converter topology is proved for such low voltage and large current DC-DC power supplies as DC bus feeding from a practical point of view.

• Journal of Power Electronics
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• 제9권2호
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• pp.259-266
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• 2009

In order to increase the power density of power converters, reduction of the switching losses at high-frequency switching conditions is one of the most important issues. This paper presents a new gate drive circuit that enables the reduction of switching losses in both the Power MOSFET and the IGBT. A distinctive feature of this method is that both the turn-on loss and the turn-off loss are decreased simultaneously without using a conventional ZVS circuit, such as the quasi-resonant adjunctive circuit. Experimental results of the switching loss of both the Power MOSFET and the IGBT are shown. In addition, an energy recovery circuit suitable for use in IGBTs that can be realized by modifying the proposed gate drive circuit is also proposed. The effectiveness of both the proposed circuits was confirmed experimentally by the buck-chopper circuit.