• 제목/요약/키워드: tunneling spectroscopy

검색결과 94건 처리시간 0.03초

STM investigation of as-cleaved and annealed single crystalline GeTe (111) surface

  • Kim, Ji-ho;Choi, Hoon-hee;Chung, In;Lyo, In-Whan
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.140.2-140.2
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    • 2016
  • Despite the growing interest in GeTe as a archetypal displacive ferroelectric material as well as the basis of related materials used in data-storage applications, atom-resolved study of single crystalline GeTe surface been lacking. Using low temperature scanning tunneling microscopy (STM) and spectroscopy (STS), we investigated as-cleaved and annealed surfaces of GeTe. We found that as-cleaved GeTe(111) surface is composed of at least two kinds of terraces at 78 K. While two terraces show metallic characteristics, they also exhibit distinctive I-V spectra and imaging conditions, with each being attributed to Ge-terminated, and Te-terminated surfaces respectively. GeTe(111) surfaces annealed at moderately elevated temperature introduces intricate networks of extended defect structures. We will present these data and discuss the role of vacancies in the formation of these structures.

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Mixed-Island Formation and Electronic Structure of Metallo-Porphyrin Molecules on Au(111)

  • 김호원;정경훈;강세종
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.303-303
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    • 2011
  • Orderings and electronic structures of organic molecules on metal substrates have been studied due to possible applications in electronic devices. In molecular systems, delocalized pi-electrons play important roles in the adsorption behaviors and electronic structures. We studied the adsorption and electronic structures of Co-Porphyrin molecules on Au(111) using scanning tunneling microscopy (STM) and spectroscopy (STS) at low temperature. Molecules form closely packed two-dimensional islands on Au(111) surface with two different types, having different shape evolutions in our energy-dependent STM observations. The Kondo resonance state, occurred by spin exchange interaction between the Co center atom and conduction electrons in the metal substrate, was observed in one type, while it was absent in the other type in scanning tunneling spectroscopy measurements. Possible origins of two molecular shapes will be discussed.

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Atomic-scale investigation of Epitaxial Graphene Grown on 6H-SiC(0001) Using Scanning Tunneling Microscopy and Spectroscopy

  • 이한길;최정헌;김세훈
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.125-125
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    • 2012
  • Graphene was epitaxially grown on a 6H-SiC(0001) substrate by thermal decomposition of SiC under ultrahigh vacuum conditions. Using scanning tunneling microscopy (STM), we monitored the evolution of the graphene growth as a function of the temperature. We found that the evaporation of Si occurred dominantly from the corner of the step rather than on the terrace. A carbon-rich $(6{\sqrt{3}}{\times}6{\sqrt{3}})R30^{\circ}$ layer, monolayer graphene, and bilayer graphene were identified by measuring the roughness, step height, and atomic structures. Defect structures such as nanotubes and scattering defects on the monolayer graphene are also discussed. Furthermore, we confirmed that the Dirac points (ED) of the monolayer and bilayer graphene were clearly resolved by scanning tunneling spectroscopy (STS).

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Recent Development of MRAM Technology

  • Miyazaki, T.;Ando, Y.;Kubota, H.
    • Journal of Magnetics
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    • 제8권1호
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    • pp.36-44
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    • 2003
  • Three topics which are related to technologies for developing of large capacity MRAM over Gbits are reviewed. First, it is stressed that inelastic-electron-tunnel-tunneling spectroscopy(IETS) is a powerfull method to investigate the interface state between magnetic electrodes and insulator. Second, magnetic tunnel junctions with small bias voltage dependence are introduced. Finally, fabrication method of carbon masks for very small magnetic tunnel junctions is demonstrated. These three topics were presented at 47^{th} MMM 2002 conference and each paper will appear in the proceedings.

Controlling Spin State of Magnetic Molecules by Oxygen Binding Studied Using Scanning Tunneling Microscopy

  • Lee, Soon-hyeong;Chang, Yun Hee;Kim, Howon;Kim, Kyung Min;Kim, Yong-Hyun;Kahng, Se-Jong
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.145.1-145.1
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    • 2016
  • Binding and unbinding between molecular oxygen and metallo-porphyrin is a key process for oxygen delivery in respiration. It can be also used to control spin state of magnetic metallo-porphyrin molecules. Controlling and sensing spin states of magnetic molecules in such reactions at the single molecule level is essential for spintronic molecular device applications. Here, we demonstrate that spin states of metallo-porphyrin on surfaces can be controlled over by binding and unbinding of oxygen molecule, and be sensed using scanning tunneling microscopy and spectroscopy. Kondo localized state of metallo-porphyrin showed significant modification by the binding of oxygen molecule, implying that the spin state was changed. Our density functional theory calculation results explain the observations with the hybridization of unpaired spins in d and ${\pi}^*$ orbitals of metallo-porphyrin and oxygen, respectively. Our study opens up ways to control molecular spin state and Kondo effect by means of molecular binding and unbinding reactions on surfaces.

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Si(100)와 Si(111) 표면의 Ge 에피 성장 연구 (Epitaxial Growth of Ge on Si(100) and Si(111) Surfaces)

  • 강윤호;국양
    • 한국진공학회지
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    • 제2권2호
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    • pp.161-165
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    • 1993
  • Si(100)와 Si(111) 표면에 에피 성장시킨 Ge의 기하학적, 전기적 구조가 scanning tunneling microscope로 연구되었다. Ge 원자는 scanning tunneling spectroscopy와 bias 전압을 달리한 STM 상에서 Si 원자와 구별되었다. 이것을 이용하여 Ge의 성장 형태를 연구하였다. (2${\times}$1) 재배열 구조를 가진 (100) 표면에서 Ge 성장층은 720K에서 B형의 step edge로부터 주로 성장하였다. (111) 표면에서도 주로 step edge에서 성장하였으며, Ge의 양과 annealing 온도에 따라 (5${\times}$5)와 (7${\times}$7)구조가 보였다.

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Adsorptions and Dissociations of Nitric Oxides at Metalloporphyrin Molecules on Metal Surfaces: Scanning Tunneling Microscopy and Spectroscopy Study

  • Kim, Ho-Won;Chung, Kyung-Hoon;Kahng, Se-Jong
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.108-108
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    • 2011
  • Organometallic complexes containing unpaired spins, such as metalloporphyrin or metallophthalocyanine, have extensively studied with increasing interests of their promising model systems in spintronic applications. Additionally, the use of these complexes as an acceptor molecule in chemical sensors has recently received great attentions. In this presentation, we have investigated adsorption of nitric oxide (NO) molecules at Co-porphyrin molecules on Au(111) surfaces with scanning tunneling microscopy and spectroscopy at low temperature. At the location of Co atom in Co-porphyrin molecules, we could observe a Kondo resonance state near Fermi energy in density of states (DOS) before exposing NO molecules and the Kondo resonance state was disappeared after NO exposing because the electronic spin structure of Co-porphyrin were modified by forming a cobalt-NO bonding. Furthermore, we could locally control the chemical reaction of NO dissociations from NO-CoTPP by electron injections via STM probe. After dissociation of NO molecules, the Kondo resonance state was recovered in density of state. With a help of density functional theory (DFT) calculations, we could understand that the modified electronic structures for NO-Co-porphyrin could be occurred by metal-ligand hybridization and the dissociation mechanisms of NO can be explained in terms of the resonant tunneling process via molecular orbitals.

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Geometrical and Electronic Structure of Epitaxial Graphene on SiC(0001) : A Scanning Tunneling Microscopy Study

  • Ha, Jeong-Hoon;Yang, Hee-Jun;Baek, Hong-Woo;Chae, Jung-Seok;Hwang, Beom-Yong;Kuk, Y.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.368-368
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    • 2010
  • Monolayers of graphite can be grown by fine controlled surface graphitization on the surfaces of various metallic and semiconducting materials. Epitaxial graphene grown on polished silicon carbide crystal surfaces has drawn much attention due to well known vacuum annealing procedures from surface analysis methods, especially scanning tunneling microscopy(STM) and scanning tunneling spectroscopy(STS). In this study, we have grown single layer and few layer graphene on silicon terminated 6H-SiC(0001) crystals. The growth of graphene layers were observed by low energy electron diffraction(LEED) patterns. Scanning tunneling microscopy and spectroscopy measurements were performed to illustrate the electronic structure which may display some clue on the influence of the underlying structure. Spatially resolved STS results acquired at the edges of epitaxial graphene show in detail the electron density of states, which is compared to theoretical calculations. STM measurements were also done on graphene films grown by chemical vapor deposition(CVD) and transferred onto a SiC(0001) crystal. These observations may provide a hint for the understanding of carrier scattering at the edges.

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