• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.1
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• pp.156-161
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• 2017

This work presents a novel structure for junction-less tunneling field effect transistor (JL-TFET) with a floating gate over the source region. Introduction of floating gate instead of fixed metal gate removes the limitation of fabrication process suitability. The proposed device is based on a heavily n-type-doped Si-channel junction-less field effect transistor (JLFET). A floating gate over source region and a control-gate with optimized metal work-function over channel region is used to make device work like a tunnel field effect transistor (TFET). The proposed device has exhibited excellent ID-VGS characteristics, ION/IOFF ratio, a point subthreshold slope (SS), and average SS for optimized device parameters. Electron charge stored in floating gate, isolation oxide layer and body doping concentration are optimized. The proposed JL-TFET can be a promising candidate for switching performances.

• Proceedings of the Computational Structural Engineering Institute Conference
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• 1996.10a
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• pp.89-94
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• 1996

The use of shield is increasing day by day, because it's method is advantageous tunneling method to soft and collapsible ground. In case of analyzing shield tunnel by FEM, short term behavior of ground by initial heaving and tail void closure and long terms of it because of consolidation by changes of pore pressures in clay must be considered. In this paper, the shield tunneling construction stages was analyzed from 2 dimensional elasto - viscoplastic finite element program used Mohr - Coulomb yield criterion but not considered the changes of pore pressures. The object of investigation was N - 2 Tunnel. Since the good results of analysis compared to the measured behavior of ground for heaving, tail void closure and liner installation, this results can be applied to design and construction of shield tunneling for the subways, sewage lines etc.

• Proceedings of the Korean Geotechical Society Conference
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• 2005.03a
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• pp.465-474
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• 2005

This paper presents the interaction effect between tunneling and groundwater on tunnel behavior. A parametric study is then conducted on the various tunneling situations frequently encountered in Seoul area using a 3D stress-pore pressure coupled finite-element model with emphasis on the effects of ground and lining permeabilities. It is shown that the ground and lining responses are significantly influenced by the relative permeability between the ground and the lining, and that the circumferential pre-grouting is effective in minimizing the tunnelling and groundwater interaction.

• Transactions of the Korean Society of Mechanical Engineers
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• v.18 no.9
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• pp.2272-2283
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• 1994

In scanning tunneling microscopy, the piezoelectric actuator is popuilarly used in stacked type as it can provide remarkable positioning resolution and stiffness. The actuator, however, exhibits a considerable amount of hystereic nonlinearity, resulting in losses of overall measuring accuracy when a linear model is used for its control and calibration, In this study, a nonlinear model is proposed for predicting the precise relationship between the input connand voltage and the output displacement of the actuator itself, cross-coupled electrical behaviours of the driving circuit with the actuator, and mechanical characteristics of the driven components of the actuator. Finally experimental results prove that the nonlinear model enhances the measuring of scanning tunneling microscopy by an order ten in comparison with a conventional linear model.

• Progress in Superconductivity
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• v.2 no.2
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• pp.57-64
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• 2001

We have calculated the tunneling density of states (TDOS) of a metal/d-wave superconductor proximity junction, where the metal stands fur the normal metal, 5-wave superconductor, and d-wave superconductor. The tunneling direction is through the ab-plane of the d-wave superconductor. Because of the sign change in the order parameter experienced in the multiple Andreev reflection, there appears a finite TDOS at zero bias for duty geometry, which results in the anomalous zero bias conductance peak(ZBCP). For $d_{x2-y2}$ geometry, however, no TDOS peak appears at zero bias. We have calculated TDOS for various crystal orientation of HTSC and compared with the experimental conductance.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.307-307
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• 2011

Graphene is the hottest topic in condensed-matter physics due to its unusual electronic structures such as Dirac cones and massless linear dispersions. Graphene can be epitaxially grown on various metal surfaces with chemical vapor deposition processes. Such epitaxial graphene shows modified electronic structures caused by substrates. Here, local geometric and electronic structures of graphene grown on Ru(0001) will be presented. Scanning tunneling microscopy (STM) and spectroscopy (STS) was used to reveal energy dependent atomic level topography and position-dependent differential conductance spectra. Both topography and spectra show variations from three different locations in rippled structures caused by lattice mismatch between graphene and substrate. Based on the observed results, structural models for graphene on Ru(0001) system were considered.

• Transactions on Electrical and Electronic Materials
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• v.5 no.5
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• pp.173-179
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• 2004

The influence of heavily Si impurity doping in the GaN barrier of InGaN/GaN multi-quantum well structures of blue light emitting diodes were investigated by growing samples in metal-organic chemical vapor deposition. The delta-doped sample was compared to the sample with the undoped barrier. The delta-doped sample shows the tunneling behavior and forms the energy level of 0.32 eV for tunneling and the photoemission of the 450-nm band. The photo-luminescence shows the blue-shifted broad band of the radiative transition due to the inclusion of Si delta-doped layer indicating that the delta doping effect acts to form the higher energy level than that of quantum well. The dislocation may provide the carrier tunneling channel and plays as a source of acceptor. During the tunneling of hot carrier, there was no light emission.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.2
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• pp.196-200
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• 2004

Using polyimide Langmuir-Blodgett(LB) films as a tunneling harrier, we fabricated Au/Polyimide/1-layer arachidic acid/Pb structure in order to investigate electron transport properties through a junction. It was found that 9-layer polyimide LB films function as a good tunneling harrier in a study of current-voltage(I-V) chararteristics. And several peaks originating in the vibrational modes of the constituent molecules of 1-layer arachidic acid LB films were clearly observed in d$^2$V/dI$^2$- V corves.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.34C no.12
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• pp.61-69
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• 1997

This paper proposes a new method for improving the performances of the neural network for optimization using a hyubrid of gradient descent method and dynamic tunneling system. The update rule of gradient descent method, which has the fast convergence characteristic, is applied for high-speed optimization. The update rule of dynamic tunneling system, which is the deterministic method with a tunneling phenomenon, is applied for global optimization. Having converged to the for escaping the local minima by applying the dynamic tunneling system. The proposed method has been applied to the travelling salesman problems and the optimal task partition problems to evaluate to that of hopfield model using the update rule of gradient descent method.

• Journal of information and communication convergence engineering
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• v.5 no.1
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• pp.45-49
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• 2007

The analytical transport model in subthreshold regime for double gate MOSFET has been presented to analyze the short channel effects such as subthreshold swing, threshold voltage roll-off and drain induced barrier lowering. The present approach includes the quantum tunneling of carriers through the source-drain barrier. Poisson equation is used for modeling thermionic emission current, and Wentzel-Kramers-Brillouin approximations are applied for modeling quantum tunneling current. This model has been used to investigate the subthreshold operations of double gate MOSFET having the gate length of the nanometer range with ultra thin gate oxide and channel thickness under sub-20nm. Compared with results of two dimensional numerical simulations, the results in this study show good agreements with those for subthreshold swing and threshold voltage roll-off. Note the short channel effects degrade due to quantum tunneling, especially in the gate length of below 10nm, and DGMOSFETs have to be very strictly designed in the regime of below 10nm gate length since quantum tunneling becomes the main transport mechanism in the subthreshold region.