• Title/Summary/Keyword: tunnel layer

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Numerical Analysis on the Internal Flow Field Characteristics of Wind Tunnel According to Contraction Type (수축부 형상에 따른 풍동 내부유동장 특성에 대한 수치해석)

  • Kim, Jang-Kweon;Oh, Seok-Hyung
    • Journal of Power System Engineering
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    • v.21 no.6
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    • pp.5-12
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    • 2017
  • The steady-state, incompressible and three-dimensional numerical analysis was carried out to investigate the internal flow fields characteristics according to wind tunnel contraction type. The turbulence model used in this study is a realizable $k-{\varepsilon}$ modified from the standard $k-{\varepsilon}$ model. As a results, the distribution of the axial mean velocity components along the central axis of the flow model is very similar to the ASME and BE types, and the cubic and cosine types. When the flow passes through the interior space of the analytical models, the flow resistance at the inlet of the plenum chamber is the largest at BS type contraction, but the smallest at cubic type contraction. The boundary layer thickness is the smallest in the cosine type contraction as the axial distance increases. The maximum turbulent kinetic energy in the test section is the smallest in the order of the contraction of cubic type and cosine type. Comprehensively, cubic type contraction is the best choice for wind tunnel performance, and cosine type contraction can be the next best solution.

Effect of heat treatment in $HfO_2$ as charge trap with engineered tunnel barrier for nonvolatile memory (비휘발성 메모리 적용을 위한 $SiO_2/Si_3N_4/SiO_2$ 다층 유전막과 $HfO_2$ 전하저장층 구조에서의 열처리 효과)

  • Park, Goon-Ho;Kim, Kwan-Su;Jung, Myung-Ho;Jung, Jong-Wan;Chung, Hong-Bay;Cho, Won-Ju
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.24-25
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    • 2008
  • The effect of heat treatment in $HfO_2$ as charge trap with $SiO_2/Si_3N_4/SiO_2$ as tunnel oxide layer in capacitors has been investigated. Rapid thermal annealing (RTA) were carried out at the temperature range of 600 - $900^{\circ}C$. It is found that all devices carried out heat treatment have large threshold voltage shift Especially, device performed heat treatment at $900^{\circ}C$ has been confirmed the largest memory window. Also, Threshold voltage shift of device used conventional $SiO_2$ as tunnel oxide layer was smaller than that with $SiO_2/Si_3N_4/SiO_2$.

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The aerodynamic characteristics of twin column, high rise bridge towers

  • Ricciardelli, Francesco;Vickery, Barry J.
    • Wind and Structures
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    • v.1 no.3
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    • pp.225-241
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    • 1998
  • The high-rise supporting towers of long-span suspension and cable-stayed bridges commonly comprise a pair of slender prisms of roughly square cross-section with a center-to-centre spacing of from perhaps 2 to 6 widths and connected by one or more cross-ties. The tower columns may have a constant spacing as common for suspension bridges or the spacing may reduce towards the top of the tower. The present paper is concerned with the aerodynamics of such towers and describes an experimental investigation of the overall aerodynamic forces acting on a pair of square cylinders in two-dimensional flow. Wind tunnel pressure measurements were carried out in smooth flow and with a longitudinal intensity of turbulence 0.10. Different angles of attack were considered between $0^{\circ}$ and $90^{\circ}$, and separations between the two columns from twice to 13 times the side width of the column. The mean values of the overall forces proved to be related to the bias introduced in the flow by the interaction between the two cylinders; the overall rms forces are related to the level of coherence between the shedding-induced forces on the two cylinders and to their phase. Plots showing the variation of the force coefficients and Strouhal number as a function of the separation, together with the force coefficients spectra and lift cross-correlation functions are presented in the paper.

Tunnel Magnetoresistance with Top Layer Plasma Oxidation Time in Doubly Oxidized Barrier Process (이중 절연층 공정에서 상부절연층의 산화시간에 따른 터널자기저항 특성연구)

  • Lee, Ki-Yung;Song, Oh-Sung
    • Journal of the Korean Magnetics Society
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    • v.12 no.3
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    • pp.99-102
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    • 2002
  • We fabricated TMR devices which have doubly oxidized tunnel barrier using plasma oxidation method to form homogeneously oxidized AlO tunnel barrier. We sputtered 10 $\AA$-bottom Al layer and oxidized it with oxidation time of 10 sec. Subsequent sputtering of 13 $\AA$-Al was performed and the metallic layer was oxidized for 50, 80, and 120 sec., respectively. The electrical resistance changed from 500 Ω to 2000 Ω with increase of oxidation time, while variation of MR ratio was little spreading 27∼31 % which is larger than that of TMR device of ordinary single tunnel barrier. We calculated effective barrier height and width by measuring I-V curves, from which we found the barrier height was 1.3∼1.8 eV sufficient for tunnel barrier, and the barrier width (<15.0 $\AA$) was smaller than physical thickness. Our results may be caused by insufficient oxidation of Al precursor into A1$_2$O$_3$. However, doubly oxidized tunnel barriers were superior to conventional single tunnel barrier in uniformity and density. Our results imply that we were able to improve MR ratio and tune resistance by employing doubly oxidized tunnel barrier process.

The Risk Assessment of Tunnel Fire Through Real Scale Fire Test (실물터널 화재실험을 통한 터널화재 위험도 평가)

  • 최준석;최병일;김명배;한용식;장용재;이유환;황낙순;김필영
    • Fire Science and Engineering
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    • v.16 no.3
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    • pp.71-76
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    • 2002
  • The real scale tunnel fire tests are carried out for the first time in domestic range to assess the extent of risk in the tunnel fire. The tunnel dimension is 465 m in length, 9.2 m in width and 6.5 m in height. Gasoline pools with 0.25 MW∼2.5 MW size and a 1500CC passenger car are used as fire sources. Six jet fans are used to change the flow velocity inside the tunnel. Temperatures at total 86 points in the tunnel are measured to find the temperature distribution and smoke behavior in the real tunnel fire. In the experiment, it is examined that the important parameters to assess the extent of risk in tunnel fire such as back layering of smoke front, descending of smoke layer and the fire size of a real passenger car.

Case Study of the Longest Roadway Tunnel in Korea, Baehuryeong Tunnel (국내 최장대 양방향 도로터널 설계사례-배후령터널)

  • Lee Seon-Bok;Je Hae-Chan
    • Tunnel and Underground Space
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    • v.15 no.6 s.59
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    • pp.432-440
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    • 2005
  • Baehuryeong tunnel connects Chuncheon with Hwacheon in Kangwon, Korea, This tunnel is a single tunnel with 5,057 m long and two bidirectional lanes which will be extended into low lanes in the future. The estimated construction period of Baehuryeong tunnel is approximately 55 months. This tunnel will become the longest bidirectional roadway tunnel in Korea. Compared to a twin tunnel, a bidirectional single tunnel has two major disadvantages with regard to the ventilation system and ease of escape during fire. For these reasons, a service tunnel and the transverse ventilation system are planned first time in Korea. In case of fire, the tunnel ventilation design aims to maintain a smoke free layer for passenger evacuation. The geology of Baehuryeong tunnel site is mainly composed of gneiss and granite. Baehuryeong fault is a mainly large scale fault which stands vertical and parallels with tunnel direction. The influenced zone of this fault is within 70 m. Baehuryeong tunnel was designed that it was separated with the distance of more than 100 m from Baehuryeong fault for its safety.

Effect of taper on fundamental aeroelastic behaviors of super-tall buildings

  • Kim, Yong Chul;Tamura, Yukio;Yoon, Sung-Won
    • Wind and Structures
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    • v.20 no.4
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    • pp.527-548
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    • 2015
  • Aeroelastic wind tunnel experiments were conducted for conventional and tapered super-tall building models to investigate the effect of taper on fundamental aeroelastic behaviors in various incident flows. Three incident flows were simulated: a turbulent boundary-layer flow representing urban area; a low-turbulent flow; and a grid-generated flow. Results were summarized focusing on the effect of taper and the effect of incident flows. The suppression of responses by introducing taper was profound in the low-turbulence flow and boundary-layer flow, but in the grid-generated flow, the response becomes larger than that of the square model when the wind is applied normal to the surface. The effects of taper and incident flows were clearly shown on the normalized responses, power spectra, stability diagrams and probability functions.

The NAND Type Flash EEPROM using the Scaled SCNOSFET (Scaled SONOSFET를 이용한 NAND형 Flash EEPROM)

  • Kim, Ju-Yeon;Kim, Byeong-Cheol;Kim, Seon-Ju;Seo, Gwang-Yeol
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.49 no.1
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    • pp.1-7
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    • 2000
  • The SNOSFET memory devices with ultrathin ONO(tunnel oxide-nitride-blocking oxide) gate dielectric were fabricated using n-well CMOS process and investigated its characteristics. The thicknesses of tunnel oxide, nitride and blocking oxide were $23{\AA},\; 53{\AA}\; and\; 33{\AA}$, respectively. Auger analysis shows that the ONO layer is made up of $SiO_2(upper layer of blocking oxide)/O-rich\; SiO_x\N\_y$. It clearly shows that the converting layer with $SiO_x\N\_y(lower layer of blocking oxide)/N-rich SiO_x\N\_y(nitride)/O-rich SiO_x\N\_y(tunnel oxide)$. It clearly shows that the converting layer with $SiO_x\N\_y$ phase exists near the interface between the blocking oxide and nitride. The programming condition of +8 V, 20 ms, -8 V, 50 ms is determined and data retention over 10 years is obtained. Under the condition of 8 V programming, it was confirmed that the modified Fowler-Nordheim tunneling id dominant charge transport mechanism. The programmed threshold voltage is distributed less than 0.1 V so that the reading error of memory stated can be minimized. An $8\times8$ NAND type flash EEPROM with SONOSFET memory cell was designed and simulated with the extracted SPICE parameters. The sufficient read cell current was obtained and the upper limit of $V_{TH}$ for write state was over 2V.

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Equivalent static wind load estimation in wind-resistant design of single-layer reticulated shells

  • Li, Yuan-Qi;Tamura, Yukio
    • Wind and Structures
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    • v.8 no.6
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    • pp.443-454
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    • 2005
  • Wind loading is very important, even dominant in some cases, to large-span single-layer reticulated shells. At present, usually equivalent static methods based on quasi-steady assumption, as the same as the wind-resistant design of low-rise buildings, are used in the structural design. However, it is not easy to estimate a suitable equivalent static wind load so that the effects of fluctuating component of wind on the structural behaviors, especially on structural stability, can be well considered. In this paper, the effects of fluctuating component of wind load on the stability of a single-layer reticulated spherical shell model are investigated based on wind pressure distribution measured simultaneously in the wind tunnel. Several methods used to estimate the equivalent static wind load distribution for equivalent static wind-resistant design are reviewed. A new simple method from the stability point of view is presented to estimate the most unfavorable wind load distribution considering the effects of fluctuating component on the stability of shells. Finally, with comparisive analyses using different methods, the efficiency of the presented method for wind-resistant analysis of single-layer reticulated shells is established.

The Effect of $ZrO_2-Y_2O_3\;(YSZ)$ Buffer Layer on Layer on Low-Field Magnetoresistance of LSMO Thin Films ($ZrO_2-Y_2O_3\;(YSZ)$ 중간층이 저 자장영역에서의 LSMO 박막의 자기저항 특성에 미치는 영향)

  • 심인보;오영제;최세영
    • Journal of the Korean Magnetics Society
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    • v.9 no.6
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    • pp.306-311
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    • 1999
  • $La_{2/3}Sr_{1/3}MnO_3(LSMO)/YSZ/SiO_2/Si(100)$ polycrystalline thin films were fabricated be chelated sol-gel method The effect of YSZ buffer layer at low field (120 Oe) spin-polarized tunneling magnetotransport (TMR) properties of LSMO thin film was studied at room temperature. Single perovskite LSMO thin films was obtained. The maximum TMR ratio was increased from 0.2 to 0.42 % by the insertion of YSZ buffer. YSZ as diffusion barrier was attributed to the fine microstructure of LSMO thin films and the reduction of dead layer between LSMO and $SiO_2/Si(100)$ interfaces.

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