• Earthquakes and Structures
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• v.15 no.6
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• pp.655-665
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• 2018

Shield tunnels are widely used throughout the world. However, their seismic performance has not been well studied. This paper focuses on the seismic response of a large scale model tunnel in compacted sand. A 9.3 m long, 3.7 m wide and 2.5 m high rigid box was filled with sand so as to simulate the sandy soil surrounding the tunnel. The setup was excited on a large-scale shake table. The model tunnel used was a 1:8 scaled model with a cross-sectional diameter of 900 mm. The effective shock absorbing layer (SAL) on the seismic response of the model tunnel was also investigated. The thickness of the tunnel lining is 60 mm. The earthquake motion recorded from the Kobe earthquake waves was used. The ground motions were scaled to have the same peak accelerations. A total of three peak accelerations were considered (i.e., 0.1 g, 0.2 g and 0.4 g). During the tests, the strain, acceleration and soil pressure on the surface of the tunnel were measured. In order to investigate the effect of shock absorbing layer on the dynamic response of the sand- tunnel system, two tunnel models were set up, one with and one without the shock absorbing layer of foam board were used. The results shows the longitudinal direction acceleration of the model tunnel with a shock absorbing layer were lower than those of model tunnel without the shock absorbing layer, Which indicates that the shock absorbing layer has a beneficial effect on the acceleration reduction. In addition, the shock absorbing layer has influence on the hoop strain and earth pressure of the model tunnel, this the effect of shock absorbing layer to the model tunnel will be discussed in the paper.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.260-260
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• 2016

최근 고화질 및 대용량 영상의 등장으로 메모리 디바이스에 대한 연구가 활발하다. 메모리 디바이스의 oxide 층은 tunnel layer, trap layer와 blocking layer로 나누어지며, tunnel layer와 trap layer 사이 계면의 상태는 메모리 특성에 큰 영향을 준다. 한편, AlOx는 메모리 디바이스의 tunnel layer에 주로 적용되는 물질로서, AlOx를 형성하는 방법에는 진공공정을 이용하여 증착하는 방법과 알루미늄을 산화시켜 형성하는 방법이 있다. 그 중, 진공공정 방법인 RF 스퍼터를 이용하는 방법은 증착시 sputtering으로 인하여 표면에 손상을 주게 되어, 산화시켜 형성한 AlOx에 비해 막질이 좋지 않다는 단점이 있다. 따라서 본 연구에서는 우수한 막질의 메모리 디바이스를 제작하기 위하여 산화시켜 형성한 AlOx를 tunnel layer로 적용시킨 MOSCAP을 제작하여 메모리 특성을 평가하였다. 제작된 소자는 n-Si (1-20 ohm-cm) 기판을 사용하였다. Tunnel layer는 e-beam evaporator를 이용하여 Al을 5 nm 두께로 증착하고 퍼니스를 이용하여 O2 분위기에서 $300^{\circ}C$의 온도로 1시간 동안 산화시켜 AlOx을 형성하였으며, 비교군으로 RF 스퍼터를 이용하여 AlOx를 10 nm 두께로 증착한 소자를 같이 제작하였다. 순차적으로, trap layer와 blocking layer는 RF 스퍼터를 이용하여 각각 HfOx 30 nm와 SiOx 30 nm를 증착하였다. 마지막으로 전극 물질로는 Al을 e-beam evaporator를 이용하여 150 nm 두께로 증착하였다. 제작된 소자에서 메모리 측정을 한 결과, 같은 크기의 윈도우를 비교하였을 때 산화시킨 AlOx를 tunnel layer로 적용한 MOSCAP에서 더 적은 전압으로도 program 동작이 나타나는 것을 확인하였다. 또한 내구성을 확인하기 위해 program/erase를 103회 반복하여 endurance를 측정한 결과, 스퍼터로 증착한 AlOx를 적용한 MOSCAP에서는 24 %의 메모리 윈도우 감소가 일어난 반면에, 산화시킨 AlOx를 적용한 MOSCAP에서는 메모리 윈도우 감소가 5 % 미만으로 일어났다. 결과적으로 산화시킨 AlOx를 메모리소자의 tunnel layer로 적용한 MOSCAP에서 더 뛰어난 내구성을 나타냈으며, 추후 최적의 oxide 두께와 열처리 조건을 통해 더 뛰어난 메모리 특성을 가지는 메모리 디바이스 제작이 가능할 것으로 기대된다.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.68-69
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• 2002

Magnetic tunnel junctions은 최근 자기저항용 재료나 MRAM용 소자로 사용하기 위한 연구가 활발하게 진행되고 있다. Magnetic tunnel junction을 저자계, 저전력용 소자로 사용되기 위해서는, 작은 switching field 값과 uniform한 switching field 분포를 가져야 한다. Micromagnetic simulation을 통하여 free layer의 두께와 포화 자화 값이 감소함에 따라서 switching field가 감소함을 알 수 있었다. 본 연구에서는 얇은 free layer를 사용하여 magnetic tunnel junction을 제조하고, 얇은 free layer가 자기저항에 미치는 영향에 대하여 알아보았다. (중략)

• Earthquakes and Structures
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• v.27 no.1
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• pp.41-55
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• 2024

There are obvious differences between the characteristics of offshore ground motion and onshore ground motion in current studies, and factors such as water layer and site conditions have great influence on the characteristics of offshore ground motion. In addition, unlike seismic response analysis of offshore superstructures such as sea-crossing bridges, tunnels are affected by offshore soil constraints, so it is necessary to consider the dynamic interaction between structure and offshore soil layer. Therefore, a seismic response analysis model considering the seawater, soil layer and tunnel structure coupling is established. Firstly, the measured offshore and different soil layers onshore ground records are input respectively, and the difference of seismic response under different types of ground motions is analyzed. Then, the models of different site conditions were input into the measured onshore bedrock strong ground motion records to study the influence of seawater layer and silt soft soil layer on the seabed and tunnel structure. The results show that the overall seismic response between the seabed and the tunnel structure is more significant when the offshore ground motion is input. The seawater layer can suppression the vertical seismic response of seabed and tunnel structure, while the slit soft soil layer can amplify the horizontal seismic response. The results will help to promote seismic wave selection of marine structures and provide reference for improving the accuracy of seismic design of immersed tunnels.

• Tunnel and Underground Space
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• v.25 no.3
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• pp.244-254
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• 2015

The tunnel is excavated through the alluvial layer composed of sand and gravel with groundwater deposited on rock. A portion of upper part of the tunnel is located in the alluvial layer and there are several buildings just above the curved section of the tunnel. It is necessary to prevent from sand-flowing into the tunnel due to low strength of the alluvial, high groundwater level and shallow depth of the tunnel from the ground surface. For this, the alluvial around the tunnel is pre-reinforced by umbrella arch method with multi-stage grouting through large diameter steel pipes or jet grouting before excavating the tunnel. The effect of the pre-reinforcement of the tunnel and the safety of the buildings are monitored by measurement of ground deformation occurred during tunnelling.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.271-276
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• 2017

The triple-gate tunnel FETs encapsulated with an epitaxial layer (EL TFETs) is proposed to lower the subthreshold swing of the TFETs. Furthermore, the band-to-band tunneling based on the maximum electric-field can occur thanks to the epitaxial layer wrapping the Si fin. The performance and mechanism of the EL TFETs are compared with the previously proposed TFET based on simulation.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.308-309
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• 2016

Reducing surface recombination is a critical factor for high efficiency silicon solar cells. The passivation process is for reducing dangling bonds which are carrier. Tunnel oxide layer is one of main issues to achieve a good passivation between silicon wafer and emitter layer. Many research use wet-chemical oxidation or thermally grown which the highest conversion efficiencies have been reported so far. In this study, we deposit ultra-thin tunnel oxide layer by PECVD (Plasma Enhanced Chemical Vapor Deposition) using $N_2O$ plasma. Both side deposit tunnel oxide layer in different RF-power and phosphorus doped a-Si:H layer. After deposit, samples are annealed at $850^{\circ}C$ for 1 hour in $N_2$ gas atmosphere. After annealing, samples are measured lifetime and implied Voc (iVoc) by QSSPC (Quasi-Steady-State Photo Conductance). After measure, samples are annealed at $400^{\circ}C$ for 30 minute in $Ar/H_2$ gas atmosphere and then measure again lifetime and implied VOC. The lifetime is increase after all process also implied VOC. The highest results are lifetime $762{\mu}s$, implied Voc 733 mV at RF-power 200 W. The results of C-V measurement shows that Dit is increase when RF-power increase. Using this optimized tunnel oxide layer is attributed to increase iVoc. As a consequence, the cell efficiency is increased such as tunnel mechanism based solar cell application.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.11 no.2
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• pp.118-124
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• 2012

The simulation of the air flow over models in atmospheric boundary layer wind tunnel is a research region based on advanced scientific technologies imposed by the necessity of studying the turbulent fluid dynamics in the proximity of the Earth's surface. In this study, the atmospheric boundary layer wind tunnel of UCD is used, the mean velocities are measured by augmentation devices such as roughness blocks and spires. The experimental results of mean velocity profile are well fitted with the value of power law.

• Korean Journal of Materials Research
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• v.12 no.3
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• pp.200-204
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• 2002

We fabricated TMR devices which have double oxidized tunnel barrier using plasma oxidation method to form homogeneously oxidized AlO tunnel barrier. We sputtered 10 $\AA$-bottom Al layer and oxidized it by varying oxidation time for 5, 10, 20 sec. Subsequent sputtering of 13 $\AA$ - Al was performed and the matallic layer was oxidized for 120 sec. The electrical resistance changed from 700$\Omega$ to 2700$\Omega$ with increase of oxidation time, while variation of MR ratio was little spreading 27~31% which is larger than that of TMR device of ordinary single tunnel barrier. We calculated effective barrier height and width by measuring I-V curves, from which we found the barrier height was 1.3~1.5 eV, sufficient for tunnel barrier, and the barrier width(<16.2 $\AA$) was smaller than that of directly measured value by the tunneling electron microscopy. Our results may be caused by insufficient oxidation of Al precursor into $Al_2O_3$. However, double oxidized tunnel barriers were superior to conventional single tunnel barrier in uniformity and density. We found that the external magnetic field to switch spin direction of ferromagnetic layer of pinned layer breaking ferro-antiferro exchange coupling was increased as bottom layer oxidation time increased. Our results imply that we were able to improve MR ratio and tune switching field by employing double oxidized tunnel barrier process.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.33 no.3
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• pp.156-163
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• 2009

In this study, comparative analysis on the back-layer phenomena in the tunnel-fire driven flow is performed using numerical simulation with LES and RANS. FDS(Fire Dynamics Simulator) code is employed to calculate the fire-driven turbulent flow for LES and Smartfire code is used for RANS. Hwang and Wargo's data of scaling tunnel fire experiment are employed to compare with the present numerical simulation. The modeled tunnel is 5.4m(L) ${\times}$ 0.4m(W) ${\times}$ 0.3m(H). Heat Release Rate (HRR) of fire is 3.3kW and ventilation-velocity is 0.33m/s in the main stream. The various grid-distributions are systematically tested with FDS code to analyze the effects of grid size. The LES method with FDS provides an improved back-layer flow behavior in comparison with the RANS (${\kappa}-{\epsilon}$) method by Smartfire. The FDS solvers, however, overpredict the velocity in the center region of flow which is caused by the defects in the tunnel-entrance turbulence strength and in the near-wall turbulent flow in FDS code.