• 제목/요약/키워드: tunability

검색결과 154건 처리시간 0.024초

The Effect of Perimeter on Characteristics of Frequency-Agile Tunable Capacitors

  • Lee, Young Chul
    • 한국정보통신학회:학술대회논문집
    • /
    • 한국정보통신학회 2012년도 추계학술대회
    • /
    • pp.561-563
    • /
    • 2012
  • In this work, tunable capacitors using a finger-type electrode are designed and characterized for frequency-agile RF circuit applications. Their top electrodes with different area and line width are designed in types of the finger for a long conducting perimeter which results in enhanced fringing-electric fields in order to improve their tunability. The tunable varactors were fabricated on a quartz substrate employing a multi-layer dielectric of a para/ferro/para-electric thin film. Compared to the conventional capacitor, finger-type capacitors are characterized in terms of effective capacitance and tunablility. Their effective capacitance and tunability with the long perimeter increase 24~40% and 7~12%, respectively, due to enhanced fringing electric fields from 1 to 2.5 GHz, compared to the conventional ones.

  • PDF

A Novel Inter-Digital Tunable Capacitor for Low-Operation Voltage Applications

  • Lee, Young Chul
    • 한국정보통신학회:학술대회논문집
    • /
    • 한국정보통신학회 2012년도 추계학술대회
    • /
    • pp.586-589
    • /
    • 2012
  • In this paper, a tunable capacitor like an interdigital one is presented for low-voltage applications. In order to reduce operation voltage by enhancing fringing electric fields, two finger-patterned electrodes are vertically separated by employing a multi-layer thin film dielectric of a para-/ferro-/para-electrics without spacing between electrodes. The proposed tunable capacitor was fabricated on a quartz wafer and its characteristics are analyzed in terms of effective capacitance and tunability with a function of applied voltages, compared to the conventional interdigital capacitor (IDC). At 8V and 2 GHz, the proposed tunable capacitor shows the tunability of 18 % that is 10.3 % higher than that of the compared one.

  • PDF

$Al_{2}O_{3}$가 첨가된 BSCT 후막의 유전특성 (Dielectric Properties of $Al_{2}O_{3}-Doped$ BSCT Thick Films)

  • 이성갑;김창일;김정필
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
    • /
    • pp.338-341
    • /
    • 2002
  • $(Ba_{1-x}Sr_{0.4}Ca_x)TiO_{3}$ (x=0.10, 0.15, 0.20) powders were prepared by the sol-gel method and BSCT thick films were fabricated by the screen-printing method. Their structural and dielectric properties were investigated with variation of composition ratio and $Al_{2}O_{3}$ doping contents. As results of the X-ray diffraction and microstructure analysis, the grain size of BSCT thick films was decreased with increasing $Al_{2}O_{3}$ amount. The thickness of BSCT thick films by 4-coating/drying is about $110{\sim}120{\mu}m$. The tunability increased with decreasing Ca content, and the BSCT(50/40/10) specimen doped with 1.0wt% $Al_{2}O_{3}$ showed the highest value of 12.94% at 5kV /cm.

  • PDF

A Real-time Tinnitus Treatment System Using Tinnitus Frequency Removal and Adjacent Frequency Amplification on Mobile Device

  • Park, Dae-Hyun;Kim, Yoon
    • 한국컴퓨터정보학회논문지
    • /
    • 제20권11호
    • /
    • pp.111-118
    • /
    • 2015
  • In this paper, we propose a new tinnitus treatment system that removes the frequency band where the ear noises is generated and amplifies the around frequency bands in order to treat a nonstop buzzing in the ears, that is one among the disease commonly generated in modern people. Mostly the tinnitus is generated by the tunability with the neighboring nerves while the part of the cerebral cortex which is unable to react to the stimuli by the sound of the specific frequency band reacts to other frequency band. Therefore, the excitability activity by the tunability of the cerebral cortex is suppressed and the remedial value is gotten by removing the tinnitus frequency band, and the around frequency bands are amplified to strengthen the remedial value. Experimental results show that the tinnitus can be treated conveniently if the patients use the android application which the proposed technique is applied to.

스퍼터링법을 이용한 Bismuth Zinc Niobate 박막의 제작 및 특성 (Fabrications and properties of Bismuth Zinc Niobate Thin Films by Sputtering)

  • 김재현;정상현;정순원;최행철;김광호
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
    • /
    • pp.18-19
    • /
    • 2006
  • The bismuth zinc niobate(BZN) pyrochlore thin films were fabricated on Pt(111)/Ti/$SiO_2$/p-Si(100) substrates using a reactive rf magnetron sputtering method at the conditions of working gas ratio Ar:$O_2$=90:10, substrate temperate $R.T{\sim}600^{\circ}C$, rf power 50 W. The dielectric constant, tunability, leakage current density and crystallinity of thin films changed with a substrate temperate. The BZN pyrochlore thin films sputtered with a substrate temperature of $600^{\circ}C$ and RTA at $800^{\circ}C$ showed a leakage current density lower than $10^{-8}\;A/cm^2$ at the range of ${\pm}300\;kV/cm$.

  • PDF

Phase-shifters 응용을 위한 MgO 박막위에 성장된 BST(100) 박막의 유전적 특성 (Dielectric properties of (100)-oriented $Ba_{0.6}Sr_{0.4}TiO_3$ Thin Films grown on MgO (100) thin films for phase-shifters)

  • 이병기;김창일
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
    • /
    • pp.663-666
    • /
    • 2004
  • In this paper, we have investigated the structure and dielectric properties of the $(Ba_{0.6}Sr_{0.4})TiO_3$ (BST) thin films film fabricatedon MgO(100)/Si substrate by an alkoxide-based sol-gel method. Both the structure and morphology of films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). For the MgO(100)/Si substrates, the BST thin films exhibited highly (100) orientation. The highly (100)-oriented BST thin films showed high dielectric constant, tunability, and figure of merit (FOM). The dielectric constants, dielectric loss and tunability of the BST thin films annealed at 700 C deposited on the MgO(100)/Si substrates measured at 10 kHz were 515.9, 0.0082, and 54.3 %, respectively.

  • PDF

Characterization of a Tunable Flattened-Pass-band Fiber Comb Filter

  • Lee, Yong Wook;Jung, Jaehoon
    • Current Optics and Photonics
    • /
    • 제3권2호
    • /
    • pp.111-118
    • /
    • 2019
  • The optical characteristics of a tunable flattened-pass-band fiber comb filter, based on the polarization-diversified loop configuration, are investigated using the $Poincar{\acute{e}}$-sphere representation. In the design process, the spectral flatness is checked quantitatively, and the tunability of the pass band is demonstrated experimentally. Theoretical calculations show that the filter also exhibits desirable dispersion and polarization properties. The orientation angles of rotatable wave plates for the wavelength tunability of the filter are obtained. Furthermore, we elaborate on the multiple angle loci produced by degeneracies through the combination of optical elements within the loop of the filter.

가변형 박막 유전체에 전극을 임베디드 시킨 고가 변형 커패시터 (A High Tunable Capacitor Embedding Its Electrodes in Tunable Thin Film Dielectrics)

  • 이영철;홍영표;고경현
    • 한국전자파학회논문지
    • /
    • 제17권9호
    • /
    • pp.860-865
    • /
    • 2006
  • 본 논문에서는 가변형 $Bi_2O_3-ZnO-Nb_2O_5(BZN)$ Pyrochlore 박막을 이용한 고가변형 inter-digital capacitor를 제안하였다. 가장자리 전계 효과를 이용한 가변성의 향상과 DC 전압의 감소를 위해 inter-digital capacitor의 전극이 박막 내부에 삽입되었다. 2.5D simulator를 이용한 설계 결과, 제 안된 구조의 inter-digital capacitor(IDC)가 일반적인 구조의 IDC에 비해 가변성이 10 % 향상되었다. 제안된 IDC는 설계 결과를 바탕으로 실리콘 기판 위에 BZN 박막을 이용하여 제작되었다. BZN 박막은 reactive RF magnetron sputtering 방법을 이용하여 증착되었다. 제작된 inter-digital capacitor는 5.8 GHz와 18 V의 DC 인가 전압에서 최대 가변율이 50 %였다.

다양한 기판위에 증착된 BST 박막의 열처리 온도에 따른 마이크로파 유전성질과 미세구조 변화 (Microwave Properties and Microstructures of (Ba,Sr)TiO3 Thin Films on Various Substrates with Annealing Temperature)

  • 조광환;강종윤;윤석진;김현재
    • 한국재료학회지
    • /
    • 제17권7호
    • /
    • pp.386-389
    • /
    • 2007
  • The dielectric properties of $(Ba_{0.5}Sr_{0.5})TiO_3$ ferroelectric thin films have been investigated according to the substrates in order to optimize the their properties. MgO, r-plane sapphire, and poly-crystalline sapphire (Alumina) substrates have been used to deposite $(Ba_{0.5}Sr_{0.5})TiO_3$ ferroelectric thin films by RF magnetron sputtering. The BST thin films deposited on the single crystal (100)MgO substrates have high tunability and low dielectric loss. These results are caused by a low misfit between the lattice parameters of the BST films and the substrate. The BST films deposited on r-plane sapphire have relatively high misfit, and the tunability of 17% and dielectric loss of 0.0007. To improve the dielectric properties of the BST films, the post-annealing methods has been introduced. The BST films deposited on (100)MgO, (1102)r-plane sapphire, and poly-crystalline sapphire substrates have best properties in post-annealing conditions of $1050^{\circ}C$, $1100^{\circ}C$, and $1150^{\circ}C$, respectively. The different optimal post-annealing conditions have been found according to the different misfits between the films and substrates, and thermal expansion coefficients. Moreover, the films deposited on alumina substrate which is relatively cheap have a good tunability properties of 23% by the post-annealing.

BZN/BST/BZN 박막에 기초한 가변 바렉터의 상부전극 가장자리 길이에 대한 가변성 영향 (The Effect of Top-electrode Perimeter on the Tunability of Tunable Varactors Based on a BZN/BST/BZN Thin Film)

  • 이영철;이백주;고경현
    • 한국항행학회논문지
    • /
    • 제17권6호
    • /
    • pp.720-725
    • /
    • 2013
  • 본 논문은 핑거 (finger) 형 전극에 의해 증강된 가장자리 전계가 가변 캐패시터의 가변성을 개선시킬 수 있음을 보여주고 있다. 가장자리가 긴 전극을 설계하기 위해 면적과 선폭이 다른 finger 형태의 전극들이 설계되었다. 가변 바렉터들은 quartz 기판위에 para/ferro/para의 가변 다층 유전체 박막을 이용하여 제작되었다. 기존의 일반적인 가변 캐패시터와 비교해서, 핑거형 캐패시터들의 유효 용량와 가변성 특성을 분석하였다. 1~2.5 GHz에서 증강된 가장자리 전계로 인해 긴 가장자리 전극으로 설계된 가변 캐패시터의 유효 용량과 가변성이 각각 24~40 % 그리고 7~12 % 증가하였다.